公开(公告)号：US20170175255A1

公开(公告)日：2017-06-22

申请号：US15118416

申请日：2015-02-13

Applicant: EVATEC ADVANCED TECHNOLOGIES AG

Inventor： Oliver RATTUNDE ,  Hans HIRSCHER

IPC: C23C14/54 ,  C23C14/34 ,  C23C14/04 ,  H01J37/34 ,  H01J37/20

CPC classification number: C23C14/542 ,  C23C14/046 ,  C23C14/34 ,  C23C14/3492 ,  H01J37/20 ,  H01J37/347

Abstract: A film is sputter-deposited on an essentially plane, extended surface of a substrate which has recesses therein, namely at least one of grooves, of holes, of bores, of vias, of trenches. So as to establish on one hand a homogeneous thickness distribution of the film along the addressed surface of the substrate and, on the other hand, a thick film deposition within the recesses, sputter deposition is performed first at a large distance between a sputter surface of a target and the addressed surface of the substrate and then at a reduced distance between the addressed surfaces.

公开(公告)号：US09222173B2

公开(公告)日：2015-12-29

申请号：US13701591

申请日：2011-05-28

Applicant: Rolf Bazlen

Inventor： Rolf Bazlen

IPC: C23C16/52 ,  C23C16/44

CPC classification number: C23C16/52 ,  C23C16/4409 ,  C23C16/4412

Abstract: An exhaust opening of a process chamber (12) contained in a vacuum chamber (11) is connected to an exhaust line (13) by a connector comprising a bellows (03) with one end which is connected to the exhaust line (13) fixed to a housing and its opposite end carrying a coupling tube (02) for connecting to a coupling ring (01) which surrounds the exhaust opening, the coupling tube (02) being elastically biased towards the same. The coupling tube (02) can be moved between a connected state where it is in contact with the coupling ring (01) and a disconnected state by an actuator reciprocatable in an axial direction perpendicular to the exhaust opening. To enable a gas-tight connection with the process chamber (12) the coupling tube (02) has lateral play such that it can align with the coupling ring (01) when a conical surface of the coupling tube (02) contacts a complementary conical surface on the coupling ring (01) in the connected state. The actuator comprises two rods (04) which extend through drill holes of an outward extending holding ring (05) of the coupling tube (02) and interact with the same in such a way that the lateral position of the coupling tube (02) is fixed in the disconnected state.

Abstract translation: 容纳在真空室（11）中的处理室（12）的排气口通过包括波纹管（03）的连接器连接到排气管（13），所述连接器的一端连接到排气管（13）固定 到壳体，并且其相对端承载用于连接到围绕排气开口的联接环（01）的联接管（O 2），所述联接管（02）朝向其弹性偏置。 联接管（O 2）可以在与联接环（01）接触的连接状态和通过在垂直于排气口的轴向方向上可往复运动的致动器的断开状态下移动。 为了能够与处理室（12）进行气密连接，联接管（02）具有横向游隙，使得当联接管（02）的锥形表面接触互补圆锥体 连接环（01）上的表面处于连接状态。 致动器包括两个杆（04），其延伸穿过联接管（02）的向外延伸的保持环（05）的钻孔并与其相互作用，使得联接管（02）的横向位置为 固定在断开状态。

公开(公告)号：US11143416B2

公开(公告)日：2021-10-12

申请号：US14908206

申请日：2014-07-29

Applicant: Evatec Advanced Technologies AG

Inventor： Juergen Weichart ,  Rolf Bazlen

IPC: F24C15/24 ,  H01L21/67

Abstract: An electrical radiation heater arrangement for a vacuum enclosure includes at least two sets of linear heating sources, arranged in a corresponding number of concentric heating zones. The heating sources are arranged directly on the vacuum side of the vacuum enclosure and electrically connected to current rails arranged on the vacuum side with each of the current rails being connected to one electrical feedthrough from vacuum to ambient. Preferably, the heating sources are arranged in a polygon approaching a circle, essentially radially or a combination of both.

公开(公告)号：US09644261B2

公开(公告)日：2017-05-09

申请号：US14181886

申请日：2014-02-17

Applicant: Oerlikon Advanced Technologies AG

Inventor： Juergen Weichart ,  Mohamed Elghazzali ,  Stefan Bammesberger ,  Dennis Minkoley

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/04 ,  C23C14/06 ,  C23C14/16 ,  C23C14/35 ,  H01L21/285

CPC classification number: C23C14/3485 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/35 ,  H01J37/345 ,  H01J37/3467 ,  H01L21/2855

Abstract: A method of depositing a metallization structure (1) comprises depositing a TaN layer (4) by applying a power supply between an anode and a target in a plurality of pulses to reactively sputter Ta from the target onto the substrate (2) to form a TaN seed layer (4). A Ta layer (5) is deposited onto the TaN seed layer (4) by applying the power supply in a plurality of pulses and applying a high-frequency signal to a pedestal supporting the substrate (2) to generate a self-bias field adjacent to the substrate (2).

公开(公告)号：US20160108515A1

公开(公告)日：2016-04-21

申请号：US14892268

申请日：2014-05-23

Applicant: EVATEC ADVANCED TECHNOLOGIES AG

Inventor： MOHAMED ELGHAZZALI ,  Jurgen WEICHART

IPC: C23C14/34 ,  C23C14/02 ,  C23F4/00 ,  C23C14/04 ,  H01J37/34 ,  H01J37/32 ,  C23C14/06 ,  C23C14/58

CPC classification number: C23C14/34 ,  C23C14/022 ,  C23C14/046 ,  C23C14/0623 ,  C23C14/3407 ,  C23C14/5826 ,  C23C14/5873 ,  C23F4/00 ,  H01J37/32431 ,  H01J37/3429 ,  H01J37/3476

Abstract: Vias of at least approx. 1:1 aspect ratio in substrates are filled with material which exhibits a thermally driven amorphous/crystalline phase change. This is performed within a vacuum process chamber. During a first timespan the material is sputter-deposited by DC sputtering from a material target. In a subsequent timespan a void, which may remain in the via as material covered by the addressed sputtering, is opened by etching performed with the help of an inductively coupled plasma generated by an Rf driven electric coil and applying to the substrate with the via an Rf bias.

Abstract translation: 至少大约有通风口 衬底中的1：1长宽比填充有表现出热驱动的非晶/晶相变的材料。 这在真空处理室内进行。 在第一次时间段期间，材料通过DC溅射从材料靶溅射沉积。 在随后的时间段中，可以通过由寻址的溅射覆盖的材料保留在通孔中的空隙通过借助于由Rf驱动的电线圈产生的电感耦合等离子体进行的蚀刻而被打开，并且通过通孔 Rf偏差。