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    CONTROLLED DIRECTIONAL SOLIDIFICATION OF SILICON
    2.
    发明申请
    CONTROLLED DIRECTIONAL SOLIDIFICATION OF SILICON 有权
    硅的控制方向固化

    公开(公告)号：US20150337454A1

    公开(公告)日：2015-11-26

    申请号：US14409433

    申请日：2013-06-25

    申请人： Silicor Materials Inc.

    发明人： Abdallah Nouri

    IPC分类号： C30B11/00 ,  C30B29/06

    CPC分类号： B22D27/045 ,  C30B11/002 ,  C30B11/003 ,  C30B29/06 ,  Y10T117/1092

    摘要： The present invention relates to an apparatus and method for directional solidification of silicon. The apparatus can use a cooling platform to cool a portion of a bottom of a directional solidification crucible. The apparatus and method of the present invention can be used to make silicon crystals for use in solar cells.

    摘要翻译： 本发明涉及硅定向固化的装置和方法。 该装置可以使用冷却平台来冷却定向凝固坩埚底部的一部分。 本发明的装置和方法可用于制造用于太阳能电池的硅晶体。

    DIRECTIONAL SOLIDIFICATION SYSTEM AND METHOD
    6.
    发明申请
    DIRECTIONAL SOLIDIFICATION SYSTEM AND METHOD 有权
    方向性固定系统及方法

    公开(公告)号：US20160032482A1

    公开(公告)日：2016-02-04

    申请号：US14776536

    申请日：2014-03-13

    申请人： SILICOR MATERIALS INC.

    发明人： Abdallah Nouri ,  Alain Turenne

    IPC分类号： C30B11/00 ,  C30B11/02 ,  H01L31/18

    CPC分类号： C30B11/002 ,  C30B11/003 ,  C30B11/02 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

    摘要： The present invention relates to an apparatus and method for purifying materials using a rapid directional solidification. Devices and methods shown provide control over a temperature gradient and cooling rate during directional solidification, which results in a material of higher purity. The apparatus and methods of the present invention can be used to make silicon material for use in solar applications such as solar cells.

    摘要翻译： 本发明涉及使用快速定向凝固来净化材料的装置和方法。 所示的装置和方法提供了在定向凝固期间对温度梯度和冷却速率的控制，这导致了更高纯度的材料。 本发明的装置和方法可用于制造用于太阳能电池等太阳能应用的硅材料。

    Method and system for controlling resistivity in ingots made of compensated feedstock silicon
    10.
    发明授权
    Method and system for controlling resistivity in ingots made of compensated feedstock silicon 有权
    由补偿原料硅制成的锭的电阻率的方法和系统

    公开(公告)号：US08968467B2

    公开(公告)日：2015-03-03

    申请号：US12618577

    申请日：2009-11-13

    申请人： Fritz Kirscht ,  Marcin Walerysiak ,  Matthias Heuer ,  Anis Jouini ,  Kamel Ounadjela

    发明人： Fritz Kirscht ,  Marcin Walerysiak ,  Matthias Heuer ,  Anis Jouini ,  Kamel Ounadjela

    IPC分类号： C30B15/00 ,  C30B11/00 ,  C30B11/04 ,  C30B29/06

    CPC分类号： H01L22/26 ,  C30B11/006 ,  C30B11/04 ,  C30B29/06 ,  H01L31/0288 ,  H01L31/182 ,  H01L31/1876

    摘要： Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides semiconductor predominantly of a single type (p-type or n-type) for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of boron, phosphorus, aluminum and/or gallium. The process further melts the silicon feedstock with the boron, phosphorus, aluminum and/or gallium to form a molten silicon solution from which to perform directional solidification and maintains the homogeneity of the resistivity of the silicon throughout the ingot. A balanced amount of phosphorus can be optionally added to the aluminum and/or gallium. Resistivity may also be measured repeatedly during ingot formation, and additional dopant may be added in response, either repeatedly or continuously.

    摘要翻译： 用于控制从补偿的原料硅材料形成硅锭中的电阻率的技术准备补偿的升级冶金硅原料以便熔化以形成硅熔体。 补偿的升级冶金硅原料提供半导体主要是单一类型（p型或n型），其过程评估硼和磷的浓度并加入预定量的硼，磷，铝和/或镓。 该方法进一步用硼，磷，铝和/或镓熔化硅原料，以形成熔融硅溶液，从而进行定向凝固，并保持硅在整个锭中的电阻率的均匀性。 可以任选地在铝和/或镓中加入平衡量的磷。 也可以在晶锭形成期间重复地测量电阻率，并且可以重复地或连续地响应地添加另外的掺杂剂。