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    Silicon wafer having colored top side
    1.
    发明授权
    Silicon wafer having colored top side 有权

    公开(公告)号：US10168450B2

    公开(公告)日：2019-01-01

    申请号：US14141717

    申请日：2013-12-27

    申请人： SunASIC Technologies, Inc.

    发明人： Chi-Chou Lin ,  Zheng-Ping He

    IPC分类号： H01L23/544 ,  H01L21/76 ,  G02B1/00 ,  G02B5/18 ,  G02B5/20

    摘要： A silicon wafer having colored top side is disclosed in the present invention. The silicon wafer includes: a wafer; a first semi-conductor layer, formed on at least a portion of a top side of the wafer, having periodical structures to form a grating pattern, and a second semi-conductor layer, formed on the first semi-conductor layer with a bottom side substantially fully contacted with the periodical structures. The first semi-conductor layer and the second semi-conductor layer form a photonic crystal layer and work to reflect a predetermined wavelength range of incident visible light beams. The present invention provides a silicon wafer which can reflect specified color(s) from the surface facing external light beams. Therefore, dies from cutting the silicon wafer with functions to interact with external environment rather than packaged can have advantages to show some specified logo or trademark.

    Capacitive image sensor and method for operating the same
    2.
    发明授权
    Capacitive image sensor and method for operating the same 有权

    公开(公告)号：US10146986B1

    公开(公告)日：2018-12-04

    申请号：US15662388

    申请日：2017-07-28

    申请人： SunASIC Technologies Limited

    发明人： Chi Chou Lin ,  Zheng Ping He

    IPC分类号： G06K9/00

    摘要： A capacitive image sensor and a method for operating the capacitive image sensor are provided. The capacitive image sensor has an array of capacitive sensing units for transforming a distance between each of the capacitive sensing units and a surface of an adjacent finger into an output electric potential. The capacitive sensing unit comprises: a protective layer; a first sensing plate, formed under the protective layer; a second sensing plate, formed under the first sensing plate; an active semiconductor circuitry, formed under the second sensing plate and connected to the first and second sensing plates; at least one first insulating layer, formed between the first sensing plate and the second sensing plate; and at least one second insulating layer, formed between the second sensing plate and the active semiconductor circuitry.

    NOISE-REDUCED CAPACITIVE SENSING UNIT
    4.
    发明申请
    NOISE-REDUCED CAPACITIVE SENSING UNIT 审中-公开

    公开(公告)号：US20180074004A1

    公开(公告)日：2018-03-15

    申请号：US15702814

    申请日：2017-09-13

    申请人： SunASIC Technologies, Inc.

    发明人： Chi-Chou LIN ,  Zheng-Ping HE

    IPC分类号： G01N27/22

    CPC分类号： G01N27/228 ,  G06F3/0418 ,  G06F3/044 ,  G06K9/0002

    摘要： A noise-reduced capacitive sensing unit is disclosed. The noise-reduced capacitive sensing unit includes: a sensing plate; a first bias voltage source for providing a first bias voltage; a second bias voltage source for providing a second bias voltage; a switch unit, connected between two bias voltage sources and the sensing plate, for selectively providing one of the bias voltages to the sensing plate; an excitation signal source for providing a bi-level waveform; a reference capacitor, formed between the excitation signal source and the sensing plate, for injecting the excitation signal to the sensing plate; and a voltage follower for providing sensing results, wherein an input node of the voltage follower is connected to the sensing plate.

    Capacitive image sensor that obtains a noise-reduced image of a finger
    5.
    发明授权
    Capacitive image sensor that obtains a noise-reduced image of a finger 有权

    公开(公告)号：US09836636B2

    公开(公告)日：2017-12-05

    申请号：US15189022

    申请日：2016-06-22

    申请人： SunASIC Technologies, Inc.

    发明人： Chi-Chou Lin ,  Zheng-Ping He

    IPC分类号： G06K9/00 ,  H01L27/146

    CPC分类号： G06K9/0002 ,  H01L27/14609 ,  H01L27/14612

    摘要： A capacitive image sensor and a method for running the capacitive image sensor are disclosed. The capacitive image sensor includes a number of capacitive sensing elements, forming an array, each capacitive sensing element for transforming a distance between a portion of a surface of an approaching finger and a top surface thereof into an output voltage, wherein a value of the output voltage is changed by a driving signal exerted on the finger; an A/D converter, for converting the output voltage into a number and outputting the number; and a signal source, for providing the driving signal to the finger.

    ULTRA-THIN PACKAGE STRUCTURE FOR INTEGRATED CIRCUIT HAVING SENSING FUNCTION AND METHOD FORMING THE SAME
    9.
    发明申请
    ULTRA-THIN PACKAGE STRUCTURE FOR INTEGRATED CIRCUIT HAVING SENSING FUNCTION AND METHOD FORMING THE SAME 有权

    公开(公告)号：US20210104563A1

    公开(公告)日：2021-04-08

    申请号：US16590463

    申请日：2019-10-02

    申请人： SunASIC Technologies, Inc.

    发明人： Chi-Chou LIN ,  Zheng Ping HE

    IPC分类号： H01L27/146 ,  H01L23/31 ,  H01L23/66 ,  H01L21/48 ,  H01L23/29 ,  H01L25/16 ,  H01L23/13

    摘要： An ultra-thin package structure for an integrated circuit having sensing functions is disclosed. It includes: a first substrate layer, having a first top side and a first bottom side, wherein a plurality of conductive traces are formed on the first top side and the first bottom side; an integrated circuit, having at least one gold-plated die pad on the top side thereof, wherein the at least one gold-plated die pad is connected to the corresponding conductive trace on the first bottom side of the first substrate layer by SMT; a second substrate layer, having a second top side and a second bottom side, wherein a plurality of conductive traces are formed on the second bottom side, and some portions of the conductive traces are covered by solder mask while other portions are exposed externally; and a filling material layer, formed between the first and the second substrate layer with the integrated circuit therebetween.

    NOISE REDUCED CAPACITIVE FINGERPRINT SENSOR AND CAPACITIVE SENSING UNIT INCLUDED THEREIN
    10.
    发明申请
    NOISE REDUCED CAPACITIVE FINGERPRINT SENSOR AND CAPACITIVE SENSING UNIT INCLUDED THEREIN 审中-公开

    公开(公告)号：US20180173919A1

    公开(公告)日：2018-06-21

    申请号：US15381182

    申请日：2016-12-16

    申请人： SunASIC Technologies, Inc.

    发明人： Chi Chou LIN ,  Zheng Ping HE

    IPC分类号： G06K9/00 ,  H04N5/365 ,  H03K17/96 ,  H01L27/06

    CPC分类号： G06K9/0002 ,  H01L27/0629 ,  H03K17/9622 ,  H04N5/365

    摘要： A capacitive fingerprint sensor which includes capacitive sensing units is disclosed. Each of the capacitive sensing unit includes a sensing electrode; a first switch; a voltage follower; and a reference capacitor. The voltage follower includes an adjustable current source, for providing at least two distinct current levels; and a MOS transistor. The MOS transistor includes a source node, connected to ground via the adjustable current source and serves as an output node of the voltage follower; a gate node, connected to the sensing electrode and serves as an input node of the voltage follower; a drain node, connected to a power source, for providing power to the voltage follower; and a bulk node, connected to the source node.