Manufacturing method of chip package and chip package

    公开(公告)号:US11942563B1

    公开(公告)日:2024-03-26

    申请号:US18327875

    申请日:2023-06-01

    申请人: XINTEC INC.

    IPC分类号: H01L31/0352 H01L31/02

    CPC分类号: H01L31/03529 H01L31/02005

    摘要: A manufacturing method of a chip package includes patterning a wafer to form a scribe trench, in which a light-transmissive function layer below the wafer is in the scribe trench, the light-transmissive function layer is between the wafer and a carrier, and a first included angle is formed between an outer wall surface and a surface of the wafer facing the light-transmissive function layer; cutting the light-transmissive function layer and the carrier along the scribe trench to form a chip package that includes a chip, the light-transmissive function layer, and the carrier; and patterning the chip to form an opening, in which the light-transmissive function layer is in the opening, a second included angle is formed between an inner wall surface of the chip and a surface of the chip facing the light-transmissive function layer, and is different from the first included angle.

    LEAKAGE DETECTING ASSEMBLY AND SHEET LEAKAGE DETECTING MODULE

    公开(公告)号:US20230280231A1

    公开(公告)日:2023-09-07

    申请号:US18175416

    申请日:2023-02-27

    申请人: XINTEC INC.

    IPC分类号: G01M3/04

    CPC分类号: G01M3/04

    摘要: A leakage detecting assembly includes a sheet leakage detecting module, a signal output unit, and a monitoring control system. The sheet leakage detecting module covers a wielding area or a connection area of a pipeline, and surrounds the pipeline. The sheet leakage detecting module is in direct contact with an outer surface of the pipeline. The signal output unit is electrically connected to the sheet leakage detecting module. The monitoring control system is electrically connected to the signal output unit.

    Manufacturing method of chip package

    公开(公告)号:US11476293B2

    公开(公告)日:2022-10-18

    申请号:US16950810

    申请日:2020-11-17

    申请人: XINTEC INC.

    IPC分类号: H01L27/146 H01L23/00

    摘要: A manufacturing method of a chip package includes forming a temporary bonding layer on a carrier; forming an encapsulation layer on a top surface of a wafer or on the temporary bonding layer; bonding the carrier to the wafer, in which the encapsulation layer covers a sensor and a conductive pad of the wafer; patterning a bottom surface of the wafer to form a through hole, in which the conductive pad is exposed through the through hole; forming an isolation layer on the bottom surface of the wafer and a sidewall of the through hole; forming a redistribution layer on the isolation layer and the conductive pad that is in the through hole; forming a passivation layer on the isolation layer and the redistribution layer; and removing the temporary bonding layer and the carrier.

    Chip package with substrate having first opening surrounded by second opening and method for forming the same

    公开(公告)号:US11450697B2

    公开(公告)日:2022-09-20

    申请号:US16581594

    申请日:2019-09-24

    申请人: XINTEC INC.

    IPC分类号: H01L27/146

    摘要: A chip package including a substrate, a first conductive structure, and an electrical isolation structure is provided. The substrate has a first surface and a second surface opposite the first surface), and includes a first opening and a second opening surrounding the first opening. The substrate includes a sensor device adjacent to the first surface. A first conductive structure includes a first conductive portion in the first opening of the substrate, and a second conductive portion over the second surface of the substrate. An electrical isolation structure includes a first isolation portion in the second opening of the substrate, and a second isolation portion extending from the first isolation portion and between the second surface of the substrate and the second conductive portion. The first isolation portion surrounds the first conductive portion.

    SEMICONDUCTOR DEVICE STRUCTURE AND SEMICONDUCTOR PACKAGE ASSEMBLY

    公开(公告)号:US20220216131A1

    公开(公告)日:2022-07-07

    申请号:US17560196

    申请日:2021-12-22

    申请人: XINTEC INC.

    摘要: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate having a first surface and a second surface opposite thereto. A gallium nitride (GaN)-based device layer is formed on the first surface of the semiconductor substrate and has source, drain, and gate contact regions. First, second, and third through-substrate vias (TSVs) pass through the semiconductor substrate and are respectively electrically connected to the source, drain, and gate contact regions. An insulating liner layer is formed on the second surface of the semiconductor substrate and extends into the semiconductor substrate to separate the second and third TSVs from the semiconductor substrate. A semiconductor package assembly including the semiconductor device structure is also provided.

    MANUFACTURING METHOD OF CHIP PACKAGE AND CHIP PACKAGE

    公开(公告)号:US20210343591A1

    公开(公告)日:2021-11-04

    申请号:US17373773

    申请日:2021-07-13

    申请人: XINTEC INC.

    摘要: A manufacturing method of a chip package includes patterning a wafer to form a scribe trench, in which a light-transmissive function layer below the wafer is in the scribe trench, the light-transmissive function layer is between the wafer and a carrier, and a first included angle is formed between an outer wall surface and a surface of the wafer facing the light-transmissive function layer; cutting the light-transmissive function layer and the carrier along the scribe trench to form a chip package that includes a chip, the light-transmissive function layer, and the carrier; and patterning the chip to form an opening, in which the light-transmissive function layer is in the opening, a second included angle is formed between an inner wall surface of the chip and a surface of the chip facing the light-transmissive function layer, and is different from the first included angle.

    Manufacturing method of chip package and chip package

    公开(公告)号:US11121031B2

    公开(公告)日:2021-09-14

    申请号:US16668570

    申请日:2019-10-30

    申请人: XINTEC INC.

    摘要: A manufacturing method of a chip package includes patterning a wafer to form a scribe trench, in which a light-transmissive function layer below the wafer is in the scribe trench, the light-transmissive function layer is between the wafer and a carrier, and a first included angle is formed between an outer wall surface and a surface of the wafer facing the light-transmissive function layer; cutting the light-transmissive function layer and the carrier along the scribe trench to form a chip package that includes a chip, the light-transmissive function layer, and the carrier; and patterning the chip to form an opening, in which the light-transmissive function layer is in the opening, a second included angle is formed between an inner wall surface of the chip and a surface of the chip facing the light-transmissive function layer, and is different from the first included angle.

    CHIP PACKAGE
    9.
    发明申请

    公开(公告)号:US20210210436A1

    公开(公告)日:2021-07-08

    申请号:US17140964

    申请日:2021-01-04

    申请人: XINTEC INC.

    摘要: A chip package includes a first substrate, a second substrate, a first conductive layer, and a metal layer. The first substrate has a bottom surface and an inclined sidewall adjoining the bottom surface, and an obtuse angle is between the bottom surface and the inclined sidewall. The second substrate is over the first substrate and has a portion that laterally extends beyond the inclined sidewall of the first substrate. The first conductive layer is between the first substrate and the second substrate. The metal layer is on said portion of the second substrate, on the bottom surface and the inclined sidewall of the first substrate, and electrically connected to an end of the first conductive layer.

    Chip package and manufacturing method thereof

    公开(公告)号:US11038077B2

    公开(公告)日:2021-06-15

    申请号:US16291637

    申请日:2019-03-04

    申请人: XINTEC INC.

    摘要: A chip package includes a chip, a sidewall structure that has a first light-shielding layer, a second light-shielding layer, and a cover. The chip has a light emitter and a light receiver that are located on a top surface of the chip. The sidewall structure is located on the top surface of the chip and has two aperture areas. The light emitter and the light receiver are respectively located in the two aperture areas. The sidewall structure surrounds the light emitter and the light receiver, and at least one surface of the sidewall structure has the first light-shielding layer. The second light-shielding layer is located between the chip and the sidewall structure. The cover is located on a surface of the sidewall structure facing away from the chip, and at least covers the light receiver and the sidewall structure that surrounds the light receiver.