Chip structure and manufacturing method thereof

    公开(公告)号:US11309271B2

    公开(公告)日:2022-04-19

    申请号:US16941486

    申请日:2020-07-28

    申请人: XINTEC INC.

    IPC分类号: H01L23/00 H01L23/48

    摘要: A chip structure includes a first substrate, a second substrate, a conductive via, and a redistribution layer. The first substrate has a first inclined sidewall. The second substrate is located on a bottom surface of the first substrate, and has an upper portion and a lower portion. The lower portion extends from the upper portion. The upper portion is between the first substrate and the lower portion. The upper portion has a second inclined sidewall, and a slope of the first inclined sidewall is substantially equal to a slope of the second inclined sidewall. The conductive via is in the lower portion. The redistribution layer extends from a top surface of the first substrate to a top surface of the lower portion of the second substrate sequentially along the first inclined sidewall and the second inclined sidewall, and is electrically connected to the conductive via.

    Chip structure and manufacturing method thereof

    公开(公告)号:US11935859B2

    公开(公告)日:2024-03-19

    申请号:US17588185

    申请日:2022-01-28

    申请人: XINTEC INC.

    IPC分类号: H01L23/00 H01L23/48

    摘要: A chip structure includes a first substrate, a second substrate, a conductive via, and a redistribution layer. The first substrate has a first inclined sidewall. The second substrate is located on a bottom surface of the first substrate, and has an upper portion and a lower portion. The lower portion extends from the upper portion. The upper portion is between the first substrate and the lower portion. The upper portion has a second inclined sidewall, and a slope of the first inclined sidewall is substantially equal to a slope of the second inclined sidewall. The conductive via is in the lower portion. The redistribution layer extends from a top surface of the first substrate to a top surface of the lower portion of the second substrate sequentially along the first inclined sidewall and the second inclined sidewall, and is electrically connected to the conductive via.

    Antenna device and manufacturing method thereof

    公开(公告)号:US11695199B2

    公开(公告)日:2023-07-04

    申请号:US17407068

    申请日:2021-08-19

    申请人: XINTEC INC.

    摘要: An antenna device includes a first substrate, a second substrate, an antenna layer, and a redistribution layer. The first substrate has a first surface, a second surface opposite to the first surface, and an inclined sidewall adjoining the first and second surfaces. The second substrate is below the first substrate. The first surface of the first substrate faces toward the second substrate. The antenna layer is located on the first surface of the first substrate. The redistribution layer extends from the second surface of the first substrate to the second substrate along the inclined sidewall of the first substrate, and the redistribution layer has a first section in contact with an end of the antenna layer.

    Chip package and manufacturing method thereof

    公开(公告)号:US11387201B2

    公开(公告)日:2022-07-12

    申请号:US17023199

    申请日:2020-09-16

    申请人: XINTEC INC.

    摘要: A chip package includes a semiconductor substrate, a supporting element, an antenna layer, and a redistribution layer. The semiconductor substrate has an inclined sidewall and a conductive pad that protrudes from the inclined sidewall. The supporting element is located on the semiconductor substrate, and has a top surface facing away from the semiconductor substrate, and has an inclined sidewall adjoining the top surface. The antenna layer is located on the top surface of the supporting element. The redistribution layer is located on the inclined sidewall of the supporting element, and is in contact with a sidewall of the conductive pad and an end of the antenna.

    Optical chip package and method for forming the same

    公开(公告)号:US11137559B2

    公开(公告)日:2021-10-05

    申请号:US16851099

    申请日:2020-04-17

    申请人: XINTEC INC.

    IPC分类号: G02B6/42

    摘要: An optical chip package is provided. The optical chip package includes a first transparent substrate, a second transparent substrate, and a spacer layer. The first and second transparent substrates each has a first surface and a second surface opposite the first surface. The first transparent substrate has a thickness that is different than that of the second transparent substrate. The second transparent substrate is disposed over the first transparent substrate, and the spacer layer is bonded between the second surface of the first transparent substrate and the first surface of the second transparent substrate. The recess region extends from the second surface of the second transparent substrate into the first transparent substrate, so that the first transparent substrate has a step-shaped sidewall. A method of forming an optical chip package is also provided.

    Chip package and manufacturing method thereof

    公开(公告)号:US11107759B2

    公开(公告)日:2021-08-31

    申请号:US17037151

    申请日:2020-09-29

    申请人: XINTEC INC.

    IPC分类号: H01L23/498 H01L21/48

    摘要: A chip package includes a lower substrate, a first silicon nitride substrate, a bonding layer, an upper substrate, a first functional layer, a transparent conductive layer, an isolation layer, and a first conductive pad. The supporting layer is located between the lower substrate and the first silicon nitride substrate, and is made of a material including Benzocyclobutene (BCB). The upper substrate is located on the first silicon nitride substrate. The first functional layer is located between the upper substrate and the first silicon nitride substrate. The transparent conductive layer is located on the upper substrate. The isolation layer covers the upper substrate and the transparent conductive layer. The first conductive pad is located in the isolation layer and in electrical contact with the transparent conductive layer.