公开(公告)号：US12126926B2

公开(公告)日：2024-10-22

申请号：US17794024

申请日：2021-01-15

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Yusuke Murakawa ,  Shin Kitano ,  Makoto Nakamura ,  Takuya Hanada ,  Koya Tsuchimoto ,  Yuki Noda

IPC分类号： H04N25/76 ,  H01L27/146 ,  H04N25/47

CPC分类号： H04N25/76 ,  H04N25/47 ,  H01L27/14612

摘要： A solid-state imaging element according to the present disclosure includes a plurality of first photoelectric conversion elements, a plurality of second photoelectric conversion elements, a plurality of current-voltage conversion circuits, and a plurality of address event detection circuits. The first photoelectric conversion elements are arranged side by side in a first region. The second photoelectric conversion elements are arranged side by side in a second region adjacent to the first region. The current-voltage conversion circuits each convert currents output from the first photoelectric conversion elements or the second photoelectric conversion elements into voltages. The address event detection circuits each detect a change in the voltages output from the current-voltage conversion circuits. At least either the current-voltage conversion circuits or the address event detection circuits connected to the second photoelectric conversion elements prevent output of signals based on the currents output from the second photoelectric conversion elements.

公开(公告)号：US12113089B2

公开(公告)日：2024-10-08

申请号：US17773154

申请日：2020-04-06

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Daisuke Washio ,  Masahiko Tsujita ,  Hidenori Maeda

IPC分类号： H01L27/146

CPC分类号： H01L27/14636 ,  H01L27/14609 ,  H01L27/14623

摘要： To prevent leakage of incident light from pixels around a pixel region (11) of a light receiving element. A light receiving element includes a pixel region and an adjacent pixel (400). In the pixel region, a plurality of pixels (100) is arranged, the plurality of pixels including a photodiode formed in a semiconductor substrate (110) in which a charge generated by photoelectric conversion of incident light is multiplied with a high reverse bias voltage, an on-chip lens (160) that focuses the incident light on the photodiode, and a wiring region (120) having a wiring layer (122) connected to the photodiode and an insulating layer (121) that insulates the wiring layer. The adjacent pixel is arranged adjacent to the pixel region and includes the photodiode, an on-chip lens (161) having a curvature different from a curvature of the on-chip lens, and the wiring region.

公开(公告)号：US12072416B2

公开(公告)日：2024-08-27

申请号：US17258394

申请日：2019-07-04

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Tomoharu Ogita

IPC分类号： G01S17/08 ,  G01B11/22 ,  G01S7/481 ,  G01S17/89 ,  H01L27/146

CPC分类号： G01S17/08 ,  G01B11/22 ,  G01S7/4816 ,  G01S17/89 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14649

摘要： The present technology relates to a light-receiving element and a distance-measuring module. A light-receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer, the semiconductor layer includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged around the first voltage application portion, a second charge detection portion arranged around the second voltage application portion, and a pixel separation portion that separates the semiconductor layer at least up to a predetermined depth in a boundary portion of adjacent pixels, and a third voltage is applied to the pixel separation portion. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.

公开(公告)号：US12068407B2

公开(公告)日：2024-08-20

申请号：US17286711

申请日：2019-09-20

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Katsuji Matsumoto ,  Masashi Yanagita

IPC分类号： H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/66

CPC分类号： H01L29/7786 ,  H01L29/0607 ,  H01L29/2003 ,  H01L29/66462

摘要： A semiconductor device includes: a semiconductor substrate; a channel layer on the semiconductor substrate; a barrier layer on the channel layer; a gate electrode on the barrier layer via a gate insulating film; a source electrode and a drain electrode on the channel layer with the gate electrode interposed therebetween; a substrate opening that penetrates the channel layer and exposes the semiconductor substrate; an insulating film provided from upper parts of the gate electrode, the source electrode, and the drain electrode to an inner side of the substrate opening; and a wiring line layer on the insulating film, and electrically coupled to one of the gate electrode, the source electrode, and the drain electrode via an opening on the insulating film, in which at least a portion of the substrate opening is in an activation region in which the gate electrode, the source electrode, and the drain electrode are provided.

公开(公告)号：US12063765B2

公开(公告)日：2024-08-13

申请号：US17266716

申请日：2019-08-13

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Manabu Tomita

IPC分类号： H10B10/00 ,  H01L23/528 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC分类号： H10B10/12 ,  H01L23/5286 ,  H01L27/092 ,  H01L29/0676 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78642 ,  H01L29/78696 ,  H10B10/125

摘要： A memory cell includes a flip-flop circuit that includes a first CMOS inverter circuit including a 1Ath transistor TR1 and a 1Bth transistor TR2 and a second inverter circuit including a 2Ath transistor TR3 and a 2Bth transistor TR4 and two transfer transistors TR5 and TR6. The 1Ath transistor TR1 and the 2Ath transistor TR2 are connected to a common first power supply line, and the 1Bth transistor TR3 and the 2Bth transistor TR4 are connected to a common second power supply line.

公开(公告)号：US12061072B2

公开(公告)日：2024-08-13

申请号：US17710046

申请日：2022-03-31

申请人： Daniel Aaron Armstrong

发明人： Daniel Aaron Armstrong

IPC分类号： F41J1/10

CPC分类号： F41J1/10

摘要： A self-contained and collapsible target stand includes a main body and at least one stand leg insertable into the main body. The target stand is capable of transitioning between an assembled state where the at least one stand leg is inserted into side surface apertures, and a collapsed state where the at least one stand leg is inserted into a cavity defined within the main body. The main body has a top surface with at least one support member aperture. The at least one support member aperture is capable of receiving a support member for a shooting target.

公开(公告)号：US12023061B2

公开(公告)日：2024-07-02

申请号：US17869857

申请日：2022-07-21

申请人： KARL STORZ SE & Co. KG

发明人： Janosz Schneider ,  Dominik Längle ,  Sven Axel Grüner ,  Jochen Stefan ,  Thorsten Ahrens

IPC分类号： A61B17/29

CPC分类号： A61B17/2909 ,  A61B2017/2929 ,  A61B2017/2947

摘要： One embodiment relates to a medical instrument (1) with a hollow shaft (2), an actuating unit (4) arranged at the proximal end (3) of the shaft (2) and an instrument tip (6) with an instrument (7) arranged at the distal end (5) of the shaft (2), wherein the instrument (7) can be actuated via an actuating element (8) which is mounted in the shaft (2) in an axially displaceable manner, and wherein the actuating element (8) is operatively connected to the actuating unit (4) on the proximal side, and wherein the instrument tip (6) can be pivoted relative to the longitudinal axis (10) of the shaft (2) via a joint mechanism (9). According to one embodiment, the instrument tip (6) can be rotated endlessly, wherein a fixing device is provided on the instrument tip (6) with which the loose end (17, 23) of a sewing material (18, 24) can be fixed on the instrument tip (6).

公开(公告)号：US12021038B2

公开(公告)日：2024-06-25

申请号：US17345086

申请日：2021-06-11

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： Margaret Barter ,  Timothy Boles

IPC分类号： H01L23/544 ,  H01L21/48 ,  H01L21/67 ,  H01L23/488

CPC分类号： H01L23/544 ,  H01L21/4814 ,  H01L21/67282 ,  H01L23/488 ,  H01L2223/54406 ,  H01L2223/5442 ,  H01L2223/54433

摘要： A technique for marking semiconductor devices with an identifiable mark or alphanumeric text yields a high-contrast, easily distinguishable mark on an electrical terminal of the device without impacting the device's breakdown voltage capability and without compromising the solderability and wire bondability of the terminal. This approach deposits the mark on the terminal as a patterned layer of palladium, which offers good contrast with the base metal of the terminal and maintains the solderability and bondability of the terminal.

公开(公告)号：US12015037B2

公开(公告)日：2024-06-18

申请号：US17044994

申请日：2019-01-17

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Yusuke Moriya

IPC分类号： H01L27/146 ,  G02B5/20

CPC分类号： H01L27/14605 ,  G02B5/208 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685

摘要： To prevent the occurrence of a defect in an infrared-light attenuation filter and prevent a reduction in image quality. An imaging device includes a photoelectric converter, an on-chip lens, a color filter, the infrared-light attenuation filter, and a protective film. The photoelectric converter performs photoelectric conversion depending on incident light. The on-chip lens collects the incident light into the photoelectric converter. Infrared light and visible light of a specified wavelength from among the collected incident light are transmitted through the color filter. The infrared-light attenuation filter attenuates the infrared light from among the collected incident light, and visible light from among the collected incident light is transmitted through the infrared-light attenuation filter. The protective film is arranged adjacent to the infrared-light attenuation filter and protects the infrared-light attenuation filter.

公开(公告)号：US12014968B2

公开(公告)日：2024-06-18

申请号：US17992766

申请日：2022-11-22

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Eiichirou Kishida

IPC分类号： H01L23/31 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78 ,  H01L27/14 ,  H01L27/146 ,  H01L31/0203 ,  H01L31/18 ,  H01L33/44 ,  H01L33/48 ,  H01L33/52

CPC分类号： H01L23/3114 ,  H01L21/561 ,  H01L21/6836 ,  H01L21/78 ,  H01L27/14 ,  H01L27/14687 ,  H01L31/0203 ,  H01L31/18 ,  H01L33/44 ,  H01L33/486 ,  H01L33/52 ,  H01L2221/68327 ,  H01L2933/0033 ,  H01L2933/005

摘要： To prevent deterioration of light incident/emission environment in a semiconductor device in which a transmissive material is laminated on an optical element forming surface via an adhesive. The semiconductor device includes a semiconductor element manufactured by chip size packaging, a transmissive material which is bonded with an adhesive to cover an optical element forming surface of the semiconductor element, and a side surface protective resin which covers an entire side surface where a layer structure of the semiconductor element and the transmissive material is exposed.