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    Chemical mechanical polishing of silicon carbide comprising surfaces
    2.
    发明授权
    Chemical mechanical polishing of silicon carbide comprising surfaces 有权
    化学机械抛光的碳化硅包括表面

    公开(公告)号：US08557133B2

    公开(公告)日：2013-10-15

    申请号：US13305479

    申请日：2011-11-28

    申请人： Rajiv K Singh ,  Arul C. Arjunan ,  Dibakar Das ,  Deepika Singh ,  Abhudaya Mishra ,  Tanjore V Jayaraman

    发明人： Rajiv K Singh ,  Arul C. Arjunan ,  Dibakar Das ,  Deepika Singh ,  Abhudaya Mishra ,  Tanjore V Jayaraman

    IPC分类号： C03C15/00

    CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463 ,  C23F1/14 ,  H01L21/02024 ,  H01L21/0475 ,  H01L21/30625

    摘要： Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness ≦6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of the silicon carbide surface is removed.

    摘要翻译： 用于使用这种浆料抛光具有碳化硅表面的基材的浆料组合物和化学活化的CMP方法。 在这种方法中，碳化硅表面与CMP浆料组合物接触，CMP浆料组合物包括i）液体载体和ii）至少具有软表面部分的多个颗粒，其中软表面部分包括过渡金属化合物，其提供 莫氏硬度为6，任选地为iii）氧化剂。 氧化剂可以包括过渡金属。 浆料相对于包含碳化硅的表面移动，其中去除至少一部分碳化硅表面。

    CYCLIC SELF-LIMITING CMP REMOVAL AND ASSOCIATED PROCESSING TOOL
    3.
    发明申请
    CYCLIC SELF-LIMITING CMP REMOVAL AND ASSOCIATED PROCESSING TOOL 失效
    循环自动限定CMP去除和相关加工工具

    公开(公告)号：US20110256802A1

    公开(公告)日：2011-10-20

    申请号：US12761110

    申请日：2010-04-15

    申请人： Rajiv Singh ,  Deepika Singh ,  Abhudaya Mishra

    发明人： Rajiv Singh ,  Deepika Singh ,  Abhudaya Mishra

    IPC分类号： B24B1/00

    CPC分类号： H01L21/77 ,  B24B37/042 ,  H01L21/3212 ,  H01L21/76819 ,  H01L21/7684

    摘要： A cyclic method of chemical mechanical polishing (CMP) a wafer having a surface includes placing the wafer on a platen in a CMP apparatus and then performing a multi-step CMP comprising process. The multi-step CMP process includes delivering a first chemical composition onto the wafer while on the platen for a first time duration, and without removing the wafer from the platen, delivering a second chemical composition different from the first composition onto the wafer for a second time duration after the first time duration. The multi-step CMP comprising process includes CMP removal using a slurry during one of the first and second time durations and a non-polishing process during the other of the first and second time durations. The multi-step CMP comprising process is repeated a plurality of times.

    摘要翻译： 具有表面的晶片的化学机械抛光（CMP）的循环方法包括将晶片放置在CMP装置中的压板上，然后执行包括工艺的多步骤CMP。 多步CMP工艺包括将第一化学成分在压板上第一时间内提供到晶片上，并且不从压板移除晶片，将不同于第一组合物的第二化学组合物输送到晶片上用于第二时间 第一个持续时间后的持续时间。 包括多步骤CMP的方法包括在第一和第二持续时间之一期间使用浆料进行CMP去除以及在第一和第二持续时间中的另一个期间的非抛光工艺。 多步骤CMP包括处理重复多次。

    CHEMICAL MECHANICAL POLISHING OF GROUP III-NITRIDE SURFACES
    4.
    发明申请
    CHEMICAL MECHANICAL POLISHING OF GROUP III-NITRIDE SURFACES 有权
    III-NITRIDE SURFACES的化学机械抛光

    公开(公告)号：US20120252213A1

    公开(公告)日：2012-10-04

    申请号：US13073582

    申请日：2011-03-28

    申请人： Rajiv K. Singh ,  Arul Chakkaravarthi Arjunan ,  Deepika Singh ,  Abhudaya Mishra

    发明人： Rajiv K. Singh ,  Arul Chakkaravarthi Arjunan ,  Deepika Singh ,  Abhudaya Mishra

    IPC分类号： H01L21/306

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/02024

    摘要： A method of chemically-mechanically polishing a substrate having a Group III-nitride surface includes providing a chemical-mechanical polishing slurry composition. The slurry composition includes a slurry solution including a liquid carrier and an oxidizer including a transition metal or a per-based compound. The slurry solution includes at least one component that reacts with the Group III-nitride surface to form a softened Group III-nitride surface. The Group III-nitride comprising surface is contacted with the slurry composition by a pad to form the softened Group III-nitride surface. The pad is moved relative to the softened Group III-nitride surface, wherein at least a portion of the softened Group III-nitride surface is removed.

    摘要翻译： 化学机械抛光具有III族氮化物表面的衬底的方法包括提供化学机械抛光浆料组合物。 浆料组合物包括包含液体载体和包含过渡金属或基于基的化合物的氧化剂的浆液。 浆料溶液包括至少一种与III族氮化物表面反应以形成软化的III族氮化物表面的组分。 含III族氮化物的表面通过焊盘与浆料组合物接触以形成软化的III族氮化物表面。 垫相对于软化的III族氮化物表面移动，其中去除了软化的III族氮化物表面的至少一部分。

    Chemical mechanical polishing of group III-nitride surfaces
    6.
    发明授权
    Chemical mechanical polishing of group III-nitride surfaces 有权
    III族氮化物表面的化学机械抛光

    公开(公告)号：US08828874B2

    公开(公告)日：2014-09-09

    申请号：US13073582

    申请日：2011-03-28

    申请人： Rajiv K. Singh ,  Arul Chakkaravarthi Arjunan ,  Deepika Singh ,  Abhudaya Mishra

    发明人： Rajiv K. Singh ,  Arul Chakkaravarthi Arjunan ,  Deepika Singh ,  Abhudaya Mishra

    IPC分类号： H01L21/302 ,  H01L21/461 ,  C09G1/02 ,  C09K3/14 ,  H01L21/02

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/02024

    摘要： A method of chemically-mechanically polishing a substrate having a Group III-nitride surface includes providing a chemical-mechanical polishing slurry composition. The slurry composition includes a slurry solution including a liquid carrier and an oxidizer including a transition metal or a per-based compound. The slurry solution includes at least one component that reacts with the Group III-nitride surface to form a softened Group III-nitride surface. The Group III-nitride comprising surface is contacted with the slurry composition by a pad to form the softened Group III-nitride surface. The pad is moved relative to the softened Group III-nitride surface, wherein at least a portion of the softened Group III-nitride surface is removed.

    摘要翻译： 化学机械抛光具有III族氮化物表面的衬底的方法包括提供化学机械抛光浆料组合物。 浆料组合物包括包含液体载体和包含过渡金属或基于基的化合物的氧化剂的浆液。 浆料溶液包括至少一种与III族氮化物表面反应以形成软化的III族氮化物表面的组分。 含III族氮化物的表面通过焊盘与浆料组合物接触以形成软化的III族氮化物表面。 垫相对于软化的III族氮化物表面移动，其中去除了软化的III族氮化物表面的至少一部分。

    Cyclic self-limiting CMP removal and associated processing tool
    7.
    发明授权
    Cyclic self-limiting CMP removal and associated processing tool 失效
    循环自限CMP去除及相关处理工具

    公开(公告)号：US08506835B2

    公开(公告)日：2013-08-13

    申请号：US12761110

    申请日：2010-04-15

    申请人： Rajiv Singh ,  Deepika Singh ,  Abhudaya Mishra

    发明人： Rajiv Singh ,  Deepika Singh ,  Abhudaya Mishra

    IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68

    CPC分类号： H01L21/77 ,  B24B37/042 ,  H01L21/3212 ,  H01L21/76819 ,  H01L21/7684

    摘要： A cyclic method of chemical mechanical polishing (CMP) a wafer having a surface includes placing the wafer on a platen in a CMP apparatus and then performing a multi-step CMP comprising process. The multi-step CMP process includes delivering a first chemical composition onto the wafer while on the platen for a first time duration, and without removing the wafer from the platen, delivering a second chemical composition different from the first composition onto the wafer for a second time duration after the first time duration. The multi-step CMP comprising process includes CMP removal using a slurry during one of the first and second time durations and a non-polishing process during the other of the first and second time durations. The multi-step CMP comprising process is repeated a plurality of times.

    摘要翻译： 具有表面的晶片的化学机械抛光（CMP）的循环方法包括将晶片放置在CMP装置中的压板上，然后执行包括工艺的多步骤CMP。 多步CMP工艺包括将第一化学成分在压板上第一时间内提供到晶片上，并且不从压板移除晶片，将不同于第一组合物的第二化学组合物输送到晶片上用于第二时间 第一个持续时间后的持续时间。 包括多步骤CMP的方法包括在第一和第二持续时间之一期间使用浆料进行CMP去除以及在第一和第二持续时间中的另一个期间的非抛光工艺。 多步骤CMP包括处理重复多次。