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    Application specific integrated circuit having a programmable logic core and a method of operation thereof
    3.
    发明授权
    Application specific integrated circuit having a programmable logic core and a method of operation thereof 有权
    具有可编程逻辑核心的专用集成电路及其操作方法

    公开(公告)号：US07042899B1

    公开(公告)日：2006-05-09

    申请号：US09851181

    申请日：2001-05-08

    申请人： Theodore F. Vaida ,  Rajiv K. Singh ,  Peter Gasperini

    发明人： Theodore F. Vaida ,  Rajiv K. Singh ,  Peter Gasperini

    IPC分类号： H04L12/66

    CPC分类号： H04L49/351 ,  H04L49/109 ,  H04L49/45 ,  H04L49/552

    摘要： The present invention provides an application specific integrated circuit and a method of operation thereof. In one advantageous embodiment, the application specific integrated circuit includes a programmable logic core having an array of dynamically configurable arithmetic logic units. This particular embodiment further includes a network interface subsystem that includes a media access controller. The network interface is configured to employ a first portion of the programmable logic core that interfaces with the media access controller and that is configurable to process control data. This embodiment further includes a data transmission subsystem associated with a memory device, and configured to employ a second portion of the programmable logic core that stores received data from the network interface subsystem to the memory device and sends transmission data from the memory device to the network interface subsystem in response to an instruction from a host system.

    摘要翻译： 本发明提供一种专用集成电路及其操作方法。 在一个有利的实施例中，专用集成电路包括具有可动态配置的算术逻辑单元阵列的可编程逻辑核心。 该特定实施例还包括包括媒体访问控制器的网络接口子系统。 网络接口被配置为采用与媒体接入控制器接口并且可配置为处理控制数据的可编程逻辑核心的第一部分。 该实施例还包括与存储器设备相关联的数据传输子系统，并且被配置为使用可编程逻辑核心的第二部分，其将接收到的数据从网络接口子系统存储到存储器设备，并将传输数据从存储器设备发送到网络 接口子系统响应来自主机系统的指令。

    Chemical mechanical polishing of silicon carbide comprising surfaces
    4.
    发明授权
    Chemical mechanical polishing of silicon carbide comprising surfaces 有权
    化学机械抛光的碳化硅包括表面

    公开(公告)号：US08557133B2

    公开(公告)日：2013-10-15

    申请号：US13305479

    申请日：2011-11-28

    申请人： Rajiv K Singh ,  Arul C. Arjunan ,  Dibakar Das ,  Deepika Singh ,  Abhudaya Mishra ,  Tanjore V Jayaraman

    发明人： Rajiv K Singh ,  Arul C. Arjunan ,  Dibakar Das ,  Deepika Singh ,  Abhudaya Mishra ,  Tanjore V Jayaraman

    IPC分类号： C03C15/00

    CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463 ,  C23F1/14 ,  H01L21/02024 ,  H01L21/0475 ,  H01L21/30625

    摘要： Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness ≦6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of the silicon carbide surface is removed.

    摘要翻译： 用于使用这种浆料抛光具有碳化硅表面的基材的浆料组合物和化学活化的CMP方法。 在这种方法中，碳化硅表面与CMP浆料组合物接触，CMP浆料组合物包括i）液体载体和ii）至少具有软表面部分的多个颗粒，其中软表面部分包括过渡金属化合物，其提供 莫氏硬度为6，任选地为iii）氧化剂。 氧化剂可以包括过渡金属。 浆料相对于包含碳化硅的表面移动，其中去除至少一部分碳化硅表面。

    Method of fabricating a crystalline thin film on an amorphous substrate
    5.
    发明授权
    Method of fabricating a crystalline thin film on an amorphous substrate 失效
    在非晶衬底上制造结晶薄膜的方法

    公开(公告)号：US5843811A

    公开(公告)日：1998-12-01

    申请号：US711126

    申请日：1996-09-09

    申请人： Rajiv K. Singh ,  Rolf E. Hummel ,  Soon-Moon Jung

    发明人： Rajiv K. Singh ,  Rolf E. Hummel ,  Soon-Moon Jung

    IPC分类号： H01L21/20 ,  H01L21/00

    CPC分类号： H01L21/2022

    摘要： A method of forming a crystalline thin film from an amorphous semiconductor thin film such as amorphous silicon, by providing a generally planar nucleation inducing member, such as a crystalline silicon wafer, having a number of micro-scale surface contact points and with a hardness equal to or greater than the hardness of the amorphous semiconductor thin film, contacting under pressure the surface contact points of the nucleation inducing member with the exposed surface of the amorphous thin film to form an assembly, annealing the assembly at between 300 to 700 degrees C. for 1 to 24 hours to crystallize the amorphous thin film, and removing the nucleation inducing member.

    摘要翻译： 通过提供具有多个微尺度表面接触点和硬度相等的大致平面的成核诱导构件（例如晶体硅晶片），从诸如非晶硅的非晶半导体薄膜形成晶体薄膜的方法 达到或大于非晶半导体薄膜的硬度，在加压下与成核诱导构件的表面接触点与非晶薄膜的暴露表面接触以形成组件，在300-700℃之间退火组件 使无定形薄膜结晶1〜24小时，除去成核诱导部件。

    Chemical mechanical polishing of group III-nitride surfaces
    7.
    发明授权
    Chemical mechanical polishing of group III-nitride surfaces 有权
    III族氮化物表面的化学机械抛光

    公开(公告)号：US08828874B2

    公开(公告)日：2014-09-09

    申请号：US13073582

    申请日：2011-03-28

    申请人： Rajiv K. Singh ,  Arul Chakkaravarthi Arjunan ,  Deepika Singh ,  Abhudaya Mishra

    发明人： Rajiv K. Singh ,  Arul Chakkaravarthi Arjunan ,  Deepika Singh ,  Abhudaya Mishra

    IPC分类号： H01L21/302 ,  H01L21/461 ,  C09G1/02 ,  C09K3/14 ,  H01L21/02

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/02024

    摘要： A method of chemically-mechanically polishing a substrate having a Group III-nitride surface includes providing a chemical-mechanical polishing slurry composition. The slurry composition includes a slurry solution including a liquid carrier and an oxidizer including a transition metal or a per-based compound. The slurry solution includes at least one component that reacts with the Group III-nitride surface to form a softened Group III-nitride surface. The Group III-nitride comprising surface is contacted with the slurry composition by a pad to form the softened Group III-nitride surface. The pad is moved relative to the softened Group III-nitride surface, wherein at least a portion of the softened Group III-nitride surface is removed.

    摘要翻译： 化学机械抛光具有III族氮化物表面的衬底的方法包括提供化学机械抛光浆料组合物。 浆料组合物包括包含液体载体和包含过渡金属或基于基的化合物的氧化剂的浆液。 浆料溶液包括至少一种与III族氮化物表面反应以形成软化的III族氮化物表面的组分。 含III族氮化物的表面通过焊盘与浆料组合物接触以形成软化的III族氮化物表面。 垫相对于软化的III族氮化物表面移动，其中去除了软化的III族氮化物表面的至少一部分。

    Chemical-mechanical polishing slurry for polishing of copper or silver films
    9.
    发明授权
    Chemical-mechanical polishing slurry for polishing of copper or silver films 失效
    用于抛光铜或银膜的化学机械抛光浆料

    公开(公告)号：US06821309B2

    公开(公告)日：2004-11-23

    申请号：US10081979

    申请日：2002-02-22

    申请人： Rajiv K. Singh ,  Seung-Mahn Lee

    发明人： Rajiv K. Singh ,  Seung-Mahn Lee

    IPC分类号： C09G100

    CPC分类号： C09G1/02 ,  C09K3/1463 ,  C23F3/06 ,  H01L21/3212

    摘要： A slurry for chemical mechanical polishing (CMP) of a copper or silver containing film provides at least one reactant for reacting with the copper or silver film to form a soft layer on the surface of the copper or silver film. The soft layer has a hardness less than the copper or silver film. The slurry preferably includes either no particles or particles which are softer than the copper or silver layer. A method for chemical mechanical polishing (CMP) a copper or silver containing film includes the steps of providing a slurry for reacting with the copper or silver film to form a soft layer on the surface of the copper or silver film and uses either no particles or particles softer than the copper or silver film, applying the slurry to the copper or silver film to form the soft layer, and removing the soft layer using a polishing pad.

    摘要翻译： 用于含铜或银的膜的化学机械抛光（CMP）的浆料提供至少一种用于与铜或银膜反应的反应物，以在铜或银膜的表面上形成软层。 软层的硬度小于铜或银膜。 浆料优选不包括比铜或银层更软的颗粒或颗粒。 一种用于化学机械抛光（CMP）的含铜或银的膜的方法包括以下步骤：提供用于与铜或银膜反应的浆料，以在铜或银膜的表面上形成软层，并且不使用任何颗粒或 比铜或银膜更软的颗粒，将浆料施加到铜或银膜以形成软层，并使用抛光垫去除软层。