利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

9 条记录 (耗时 0.013 秒)

    Method and system for producing monosilane
    1.
    发明授权
    Method and system for producing monosilane 有权
    生产甲硅烷的方法和系统

    公开(公告)号：US09023297B2

    公开(公告)日：2015-05-05

    申请号：US13382557

    申请日：2010-07-07

    申请人： Adolf Petrik ,  Christian Schmid ,  Jochem Hahn

    发明人： Adolf Petrik ,  Christian Schmid ,  Jochem Hahn

    IPC分类号： B01J8/04 ,  B01J8/00 ,  B01J8/02 ,  B01J19/00 ,  B01J19/24 ,  B01J35/00 ,  B01J35/02 ,  B01D3/00 ,  C01B33/00 ,  C01B33/04

    CPC分类号： B01D3/009 ,  C01B33/043 ,  Y02P20/127

    摘要： A plant for preparing monosilane (SiH4) by catalytic disproportionation of trichlorosilane (SiHCl3) includes a reaction column having a feed line for trichlorosilane and a discharge line for silicon tetrachloride (SiCl4) formed, and at least one condenser via which monosilane produced can be discharged from the reaction column, wherein the reaction column has at least two reactive/distillative reaction regions operated at different temperatures and containing different catalytically active solids, at least one of the reaction regions containing a catalytically active solid based on vinylpyridine, and at least one of the reaction regions containing a catalytically active solid based on styrene.

    摘要翻译： 通过三氯硅烷（SiHCl 3）的催化歧化制备甲硅烷（SiH 4）的设备包括具有三氯硅烷进料管线和形成四氯化硅（SiCl 4）排放管线的反应塔，至少一个冷凝器，通过其可以排出生成的甲硅烷 其中所述反应塔具有至少两个在不同温度下操作且含有不同催化活性固体的反应/蒸馏反应区域，至少一个所述反应区域含有基于乙烯基吡啶的催化活性固体，和至少一个 反应区域含有基于苯乙烯的催化活性固体。

    METHOD AND SYSTEM FOR PRODUCING MONOSILANE
    2.
    发明申请
    METHOD AND SYSTEM FOR PRODUCING MONOSILANE 有权
    生产单体的方法和系统

    公开(公告)号：US20120201728A1

    公开(公告)日：2012-08-09

    申请号：US13382557

    申请日：2010-07-07

    申请人： Adolf Petrik ,  Christian Schmid ,  Jochem Hahn

    发明人： Adolf Petrik ,  Christian Schmid ,  Jochem Hahn

    IPC分类号： B01J8/04

    CPC分类号： B01D3/009 ,  C01B33/043 ,  Y02P20/127

    摘要： A plant for preparing monosilane (SiH4) by catalytic disproportionation of trichlorosilane (SiHCl3) includes a reaction column having a feed line for trichlorosilane and a discharge line for silicon tetrachloride (SiCl4) formed, and at least one condenser via which monosilane produced can be discharged from the reaction column, wherein the reaction column has at least two reactive/distillative reaction regions operated at different temperatures and containing different catalytically active solids, at least one of the reaction regions containing a catalytically active solid based on vinylpyridine, and at least one of the reaction regions containing a catalytically active solid based on styrene.

    摘要翻译： 通过三氯硅烷（SiHCl 3）的催化歧化制备甲硅烷（SiH 4）的设备包括具有三氯硅烷进料管线和形成四氯化硅（SiCl 4）排放管线的反应塔，至少一个冷凝器，通过其可以排出生成的甲硅烷 其中所述反应塔具有至少两个在不同温度下操作且含有不同催化活性固体的反应/蒸馏反应区域，至少一个所述反应区域含有基于乙烯基吡啶的催化活性固体，和至少一个 反应区域含有基于苯乙烯的催化活性固体。

    PLANT AND PROCESS FOR PREPARING MONOSILANE
    3.
    发明申请
    PLANT AND PROCESS FOR PREPARING MONOSILANE 审中-公开
    制备单体的植物和方法

    公开(公告)号：US20120183465A1

    公开(公告)日：2012-07-19

    申请号：US13388681

    申请日：2010-08-02

    申请人： Adolf Petrik ,  Jochem Hahn ,  Christian Schmid

    发明人： Adolf Petrik ,  Jochem Hahn ,  Christian Schmid

    IPC分类号： C01B33/107 ,  B01J19/00

    CPC分类号： B01D3/009 ,  C01B33/043 ,  Y02P20/127

    摘要： A plant and a process prepare monosilane (SiH4) by catalytically disproportionating trichlorosilane (SiHCl3). The trichlorosilane is converted in a reaction column over a catalyst and then purified in a rectification column. Between a reactive/distillative reaction region in the reaction column and the rectification column are arranged one or more condensers in which monosilane-containing reaction product from the reaction column is partly condensed. However, these are exclusively condensers which are operated at a temperature above −40° C.

    摘要翻译： 植物和工艺通过催化歧化三氯硅烷（SiHCl 3）制备甲硅烷（SiH 4）。 将三氯硅烷在反应塔中在催化剂上转化，然后在精馏塔中纯化。 在反应塔和精馏塔的反应/蒸馏反应区域之间布置有一个或多个冷凝器，其中来自反应塔的含甲硅烷的反应产物被部分冷凝。 然而，这些仅是在-40℃以上的温度下工作的电容器。

    PROCESS FOR PRODUCING MONOSILANE
    5.
    发明申请
    PROCESS FOR PRODUCING MONOSILANE 失效
    生产单体的方法

    公开(公告)号：US20090155156A1

    公开(公告)日：2009-06-18

    申请号：US12088286

    申请日：2006-06-19

    申请人： Raymund Sonnenschein ,  Peter Adler ,  Yuriy Kasatkin ,  Adolf Petrik ,  Leonid Schwarzmann

    发明人： Raymund Sonnenschein ,  Peter Adler ,  Yuriy Kasatkin ,  Adolf Petrik ,  Leonid Schwarzmann

    IPC分类号： C01B33/08 ,  B01J19/00

    CPC分类号： C01B33/043 ,  B01D3/009 ,  B01J8/0085 ,  B01J8/009 ,  B01J8/025 ,  B01J8/0285 ,  B01J8/0426 ,  B01J8/0438 ,  B01J8/0453 ,  B01J8/048 ,  B01J8/0484 ,  B01J8/0492 ,  B01J8/0496 ,  B01J8/065 ,  B01J8/067 ,  B01J19/30 ,  B01J19/32 ,  B01J2208/00176 ,  B01J2208/00212 ,  B01J2208/00221 ,  B01J2208/00247 ,  B01J2208/00274 ,  B01J2208/00283 ,  B01J2208/0053 ,  B01J2208/00884 ,  B01J2208/021 ,  B01J2219/30475 ,  B01J2219/32466 ,  B01J2219/3325 ,  C01B33/10773 ,  Y02P20/127 ,  Y10S203/06

    摘要： The present invention relates to a plant and a process for the continuous production of monosilane and tetrachlorosilane by catalytic dismutation of trichlorosilane at an operating temperature and a pressure of from 1 to 50 bar abs. in a plant according to claim 1, in which—trichlorosilane (A) is preheated in a heat exchanger (7), and fed to the 10 countercurrent reactor (1) which is provided with catalyst (3),—product mixture formed in the countercurrent reactor (1) is at least partly condensed by means of the condenser (5) at a temperature in the range from −25 to 50° C. with the condensate flowing back into the countercurrent reactor (1),—the product phase which is not condensed in the condenser (5) is passed to the 15 condensation unit (8) which is operated at a temperature in the range from −40 to −110° C.,—the volatile product phase from the condensation unit (8) is fed to the distillation column (9) which is operated at a temperature in the range from −60 to −170° C. and monosilane (C) is discharged at the top of the distillation column (9), 20—the SiCl4-containing bottoms from the countercurrent reactor (1) are brought to a temperature in the range from 60 to 110° C. in the vaporizer unit (6) and—bottom product from the vaporizer (6) is conveyed via a heat exchanger (7) into the double wall (2) of the countercurrent reactor (1) and the SiCl4-containing product stream (B) is discharged at a level in the upper region of the reactor (1).

    摘要翻译： 本发明涉及一种在操作温度和1至50巴绝对压力下通过三氯硅烷的催化分解连续生产甲硅烷和四氯硅烷的设备和方法。 在根据权利要求1的设备中，其中在热交换器（7）中预热三氯硅烷（A），并送入设有催化剂（3）的10逆流反应器（1）， - 形成在 逆流反应器（1）通过冷凝器（5）至少部分地在-25至50℃的温度范围内冷凝，冷凝物流回到逆流反应器（1）中，产物相位 在冷凝器（5）中未冷凝的冷凝单元（8）在-40至-110℃的温度范围内运行， - 来自冷凝单元（8）的挥发性产物相 进料到在-60至-70℃范围内操作的蒸馏塔（9）中，并且甲硅烷（C）在蒸馏塔（9）的顶部排出，20- SiCl 4 - 来自逆流反应器（1）的含底部物质在蒸发器单元（6）中的温度范围为60至110℃，-toto 来自蒸发器（6）的产物经由热交换器（7）输送到逆流反应器（1）的双壁（2）中，并且含SiCl4的产物流（B）在上部区域中被排出 的反应器（1）。

    PROCESS AND PLANT FOR PREPARING TRICHLOROSILANE
    8.
    发明申请
    PROCESS AND PLANT FOR PREPARING TRICHLOROSILANE 审中-公开
    制备三氯硅烷的方法和设备

    公开(公告)号：US20120189526A1

    公开(公告)日：2012-07-26

    申请号：US13388692

    申请日：2010-08-02

    申请人： Adolf Petrik ,  Jochem Hahn ,  Christian Schmid

    发明人： Adolf Petrik ,  Jochem Hahn ,  Christian Schmid

    IPC分类号： C01B33/107 ,  B01J8/26

    CPC分类号： C01B33/1071 ,  C01B33/10763

    摘要： A process for preparing trichlorosilane includes reacting silicon particles with tetrachlorosilane and hydrogen and optionally with hydrogen chloride in a fluidized-bed reactor to form a trichlorosilane-containing product gas stream, where the trichlorosilane-containing product gas stream is discharged from the reactor via an outlet preceded by at least one particle separator which selectively allows only silicon particles up to a particular maximum size to pass through and silicon particles are discharged from the reactor at preferably regular intervals or continuously via at least one further outlet without such a particle separator.

    摘要翻译： 制备三氯硅烷的方法包括在流化床反应器中使硅颗粒与四氯硅烷和氢气以及任选地与氯化氢反应形成含三氯硅烷的产物气流，其中含三氯硅烷的产物气流通过出口从反应器排出 之前有至少一个颗粒分离器，其选择性地仅允许直到特定最大尺寸的硅颗粒通过，并且硅颗粒以优选规则的间隔或连续经由至少另外一个出口排出反应器，而没有这种颗粒分离器。

    METHOD AND SYSTEM FOR THE PRODUCTION OF PURE SILICON
    9.
    发明申请
    METHOD AND SYSTEM FOR THE PRODUCTION OF PURE SILICON 审中-公开
    用于生产纯硅的方法和系统

    公开(公告)号：US20110262338A1

    公开(公告)日：2011-10-27

    申请号：US12935093

    申请日：2009-03-31

    申请人： Christian Schmid ,  Adolf Petrik ,  Jochem Hahn

    发明人： Christian Schmid ,  Adolf Petrik ,  Jochem Hahn

    IPC分类号： C01B33/021 ,  B01J19/00

    CPC分类号： C01B33/035 ,  C01B33/029 ,  C01B33/043 ,  C01B33/10763 ,  C01B33/10773 ,  Y02P20/127

    摘要： A process for producing high-purity silicon includes (1) preparing trichlorosilane by reacting silicon with hydrogen chloride in at least one hydrochlorination process; (2) preparing monosilane by disproportionation of the trichlorosilane to provide a monosilane-containing reaction mixture containing silicon tetrachloride as a by-product; (3) in parallel to (1), reacting silicon tetrachloride obtained as the by-product in (2) with silicon and hydrogen in at least one converting process to produce a trichlorosilane-containing reaction mixture; and (4) thermally decomposing the monosilane into silicon and hydrogen.

    摘要翻译： 一种生产高纯度硅的方法包括（1）在至少一个氢氯化法中使硅与氯化氢反应制备三氯硅烷; （2）通过歧化三氯硅烷制备甲硅烷，以提供含有四氯化硅作为副产物的含甲硅烷的反应混合物; （3）平行于（1），在（2）中作为副产物获得的四氯化硅与硅和氢在至少一个转化方法中反应，生成含三氯硅烷的反应混合物; 和（4）将硅烷分解为硅和氢。