公开(公告)号：US06525855B1

公开(公告)日：2003-02-25

申请号：US09051147

申请日：1998-04-02

Applicant: Leslie D Westbrook ,  David G Moodie

Inventor： Leslie D Westbrook ,  David G Moodie

IPC: H04B1000

CPC classification number: H04B10/29 ,  G02F2001/0157 ,  H04B10/25758

Abstract: An optical communications network includes a terminal which can simultaneously receive and modulate an optical signal. The terminal includes an optical modulator which is controlled by varying the bias voltage applied to it.

Abstract translation: 光通信网络包括可以同时接收和调制光信号的终端。 该端子包括通过改变施加到其上的偏置电压来控制的光学调制器。

公开(公告)号：US4754459A

公开(公告)日：1988-06-28

申请号：US784949

申请日：1985-10-07

Applicant: Leslie D. Westbrook

Inventor： Leslie D. Westbrook

IPC: H01S5/00 ,  H01S5/12 ,  H01S5/125 ,  H01S5/14 ,  H01S5/22 ,  H01S3/19

CPC classification number: H01S5/0014 ,  H01S5/12 ,  H01S5/22 ,  H01S5/125 ,  H01S5/14

Abstract: The emission linewidth of a semiconductor laser can be reduced by operating it at a wavelength which is less than the wavelength of maximum gain at the threshold current, .lambda. max. An assembly for carrying out such operation comprises a ridge waveguide laser provided with a distributed feedback (DFB) grating. The period of the grating is selected to give a predetermined emission wavelength to the laser which is shorter than .lambda. max.

Abstract translation: 半导体激光器的发射线宽可以通过在小于阈值电流的最大增益波长λmax的波长下操作来降低。 用于进行这种操作的组件包括设置有分布反馈（DFB）光栅的脊波导激光器。 选择光栅的周期以给予比λmax短的激光器的预定发射波长。

公开(公告)号：US5026662A

公开(公告)日：1991-06-25

申请号：US527692

申请日：1990-05-24

Applicant: Leslie D. Westbrook

Inventor： Leslie D. Westbrook

IPC: H01L21/308 ,  H01L21/306 ,  H01L21/764 ,  H01L33/00 ,  H01S5/00 ,  H01S5/227

CPC classification number: H01L21/30612 ,  H01L21/764 ,  H01L33/0062 ,  H01S5/227 ,  H01S5/2272 ,  H01S5/2275 ,  Y10S148/095

Abstract: A method of undercutting mesa structures in which the lateral extent of the undercut is determined by a prior fabrication stage in which channels (5, 6) are etched and then infilled with a different material. The mesa is formed over the channels (5,6) and a selective etch is used to undercut the mesa, the extent of the undercut (11) being limited by the location of the infilled channels (5, 6). For mechanical stability and insulation the undercuts (11) are filled or partly filled with dielectric (10).

公开(公告)号：US06731880B2

公开(公告)日：2004-05-04

申请号：US10243838

申请日：2002-09-16

Applicant: Leslie D Westbrook ,  David G Moodie

Inventor： Leslie D Westbrook ,  David G Moodie

IPC: H04B1000

CPC classification number: H04B10/29 ,  G02F2001/0157 ,  H04B10/25758

Abstract: An optical communications network includes a terminal which can simultaneously receive and modulate an optical signal. The terminal includes an optical modulator which is controlled by varying the bias voltage applied to it.

公开(公告)号：US5329542A

公开(公告)日：1994-07-12

申请号：US781178

申请日：1991-11-01

Applicant: Leslie D. Westbrook

Inventor： Leslie D. Westbrook

IPC: H01S5/00 ,  H01S3/063 ,  H01S5/12 ,  H01S3/19

CPC classification number: H01S5/12 ,  H01S3/0635 ,  H01S5/1212 ,  H01S5/1225 ,  H01S5/124

Abstract: Improved single-modedness is achieved in distributed feedback (DFB) lasers by minimizing the feedback provided at or near the ends of the DFB grating. The feedback may be minimized at one or both ends of the grating. Feedback is controlled by reducing the coupling to the grating. Coupling is reduced by reducing the depth of the grating's teeth and/or by increasing the spacing of adjacent teeth.

Abstract translation: PCT No.PCT / GB90 / 00488 Sec。 371日期1991年11月1日 102（e）1991年11月1日PCT 1990年4月2日PCT PCT。 WO90 / 12436 PCT公开号 1990年10月18日。通过最小化在DFB光栅末端附近提供的反馈，在分布式反馈（DFB）激光器中实现改进的单模。 在光栅的一端或两端可以使反馈最小化。 通过减少与光栅的耦合来控制反馈。 通过减小光栅的深度和/或通过增加相邻齿的间距来减小耦合。

公开(公告)号：US4805184A

公开(公告)日：1989-02-14

申请号：US926720

申请日：1986-11-04

Applicant: Philip J. Fiddyment ,  Leslie D. Westbrook ,  Andrew W. Nelson

Inventor： Philip J. Fiddyment ,  Leslie D. Westbrook ,  Andrew W. Nelson

IPC: G02B6/122 ,  G02B6/12 ,  H01L21/205 ,  H01L21/306 ,  H01L33/00 ,  H01S5/00 ,  H01S5/12 ,  H01S5/22 ,  H01S3/19

CPC classification number: H01S5/22 ,  H01S5/12 ,  H01S5/1237

Abstract: A semiconductor device is disclosed that comprises a base semiconductor portion and, thereon, first and second elevated semiconductor portions separated by a channel. The uppermost surface of the first elevated semiconductor portion carries a metal electrical contact layer and the uppermost of the second a dielectric layer. The surfaces defining the channel are substantially free of metal and dielectric. The structure can be used in a ridge waveguide laser, the first elevated semiconductor portion constituting the ridge. Distributed feedback corrugations may be incorporated in such devices or in other ridge waveguide structures.

公开(公告)号：US4734387A

公开(公告)日：1988-03-29

申请号：US770081

申请日：1985-08-28

Applicant: Andrew W. Nelson ,  Leslie D. Westbrook

Inventor： Andrew W. Nelson ,  Leslie D. Westbrook

IPC: C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/205 ,  H01S5/12 ,  H01S5/323 ,  B05D5/12

CPC classification number: C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01S5/12 ,  H01S5/1231 ,  H01S5/32391

Abstract: A gas mixture containing phosphine and R.sub.1 R.sub.2 R.sub.3 In X R.sub.4 R.sub.5 R.sub.6 or R.sub.1 R.sub.2 In X R.sub.4 R.sub.5 where the Rs are alkyl groups is passed over a semiconductor substrate comprising indium and phosphorus so as to deposit a semiconductor material comprising indium and phosphorus, and the exposure of the substrate to phosphine is controlled to avoid or reduce transport of the substrate material.Thus, for example, indium phosphide may be grown onto corrugations in gallium indium arsenide phosphide, the corrugations being non-deformed during this growth. Such a growth step may be used in the production of distributed feedback semiconductor lasers operating near 1.55 .mu.m.

Abstract translation: 含有膦和R1R2R3的气体混合物在X R4R5R6或R1R2In X R4R5（其中Rs为烷基）中通过包含铟和磷的半导体衬底，以沉积包含铟和磷的半导体材料，并将衬底暴露于磷化氢 被控制以避免或减少基底材料的输送。 因此，例如，磷化铟可以生长在磷化铟镓磷化物的波纹上，波纹在该生长期间不变形。 这样的生长步骤可以用于生产接近1.55μm的分布式反馈半导体激光器。

公开(公告)号：US4728628A

公开(公告)日：1988-03-01

申请号：US709196

申请日：1985-03-07

Applicant: Philip J. Fiddyment ,  Leslie D. Westbrook ,  Andrew W. Nelson

Inventor： Philip J. Fiddyment ,  Leslie D. Westbrook ,  Andrew W. Nelson

IPC: G02B6/122 ,  G02B6/12 ,  H01L21/205 ,  H01L21/306 ,  H01L33/00 ,  H01S5/00 ,  H01S5/12 ,  H01S5/22 ,  H01L21/308

CPC classification number: H01S5/22 ,  H01S5/12 ,  H01S5/1237

Abstract: A semiconductor device comprises a base semiconductor portion and, thereon, first and second elevated semiconductor portions separated by a channel. The uppermost surface of the first elevated semiconductor portion carries a metal electrical contact layer and the uppermost of the second a dielectric layer. The surfaces defining the channel are substantially free of metal and dielectric.The structure can be used in a ridge waveguide laser, the first elevated semiconductor portion constituting the ridge (7", 8").Distributed feedback corrugations may be incorporated in such devices (6), or in other ridge waveguide structures.

Abstract translation: 半导体器件包括基极半导体部分，并且在其上，由沟道分开的第一和第二升高的半导体部分。 第一升高半导体部分的最上表面承载金属电接触层和第二电介质层的最上面。 限定通道的表面基本上没有金属和电介质。 该结构可以用在脊波导激光器中，第一升高半导体部分构成脊（7 + 41,8“）。 分布式反馈波纹可以结合在这种装置（6）中，或者在其他脊形波导结构中。

公开(公告)号：US06320688B1

公开(公告)日：2001-11-20

申请号：US09068524

申请日：1998-05-11

Applicant: Leslie D Westbrook ,  David G Moodie

Inventor： Leslie D Westbrook ,  David G Moodie

IPC: H04B1004

CPC classification number: G02F1/017 ,  B82Y20/00 ,  G02F2001/0157 ,  G02F2203/19 ,  H01S5/0265 ,  H04B10/504 ,  H04B10/54

Abstract: An optical transmitter includes a directly modulated semiconductor laser and a non-linear optical intensity modulator which is connected in series with the output of the laser. High frequency analogue modulating signals are applied both to the laser and to the modulator. The modulator has a transfer characteristic such that it cancels intermodulation distortion in the output from the laser, to give a source with an improved dynamic range. The transmitter is suitable for use in an analogue optical distribution system for cellular radio.

Abstract translation: 光发射机包括直接调制的半导体激光器和与激光器的输出串联连接的非线性光强调制器。 高频模拟调制信号都施加到激光器和调制器。 调制器具有传递特性，使得其消除来自激光器的输出中的互调失真，从而给出具有改善的动态范围的源。 发射机适用于蜂窝无线电的模拟光分配系统。

公开(公告)号：US4964134A

公开(公告)日：1990-10-16

申请号：US254934

申请日：1988-10-04

Applicant: Leslie D. Westbrook ,  Michael J. Adams

Inventor： Leslie D. Westbrook ,  Michael J. Adams

IPC: H01S5/00 ,  H01L33/06 ,  H01S5/06 ,  H01S5/12 ,  H01S5/223 ,  H01S5/30 ,  H01S5/34 ,  H01S5/343

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01S5/12 ,  H01S5/305 ,  H01S5/34 ,  H01S5/0618 ,  H01S5/223 ,  H01S5/3054 ,  H01S5/3428 ,  H01S5/34306 ,  H01S5/34313

Abstract: A laser structure with highly p-doped active material which has a particularly low linewidth enhancement factor .alpha.. Hence the emission linewidth of the laser structure is relatively small. The structure shows a particular relationship between the photon energy, the band gap energy and the conduction band quasi Fermi level of the active material which minimizes .alpha., the valence band being degenerate. These conditions can be used to design low .alpha. laser structures. Such structures are of particular application to directly modulated lasers or absorption modulators and also find application in coherent optical detection.