公开(公告)号：US08084356B2

公开(公告)日：2011-12-27

申请号：US12212611

申请日：2008-09-17

Applicant: Yezdi N. Dordi ,  Arthur M. Howald

Inventor： Yezdi N. Dordi ,  Arthur M. Howald

IPC: H01L21/4763 ,  H01L21/302 ,  H01L21/461

CPC classification number: H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76883

Abstract: An integrated process for forming metallization layers for electronic devices that use damascene structures that include low-k dielectric and metal. According to one embodiment of the present invention, the integrated process includes planarizing a gapfill metal in low-k dielectric structures, generating a protective layer on the low-k dielectric followed by cleaning the surface of the gapfill metal. Another embodiment of the present invention includes a method of protecting low-k dielectrics such as carbon doped silicon oxide.

Abstract translation: 一种用于形成使用包括低k电介质和金属的镶嵌结构的电子器件的金属化层的集成方法。 根据本发明的一个实施例，集成工艺包括平面化低k电介质结构中的间隙填充金属，在低k电介质上产生保护层，然后清洁间隙填充金属的表面。 本发明的另一个实施方案包括保护低k电介质如碳掺杂氧化硅的方法。

公开(公告)号：US07884017B2

公开(公告)日：2011-02-08

申请号：US12699518

申请日：2010-02-03

Applicant: Zhonghui Alex Wang ,  Tiruchirapalli Arunagiri ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Boyd ,  Mikhail Korolik ,  Arthur M. Howald ,  William Thie ,  Praveen Nalla

Inventor： Zhonghui Alex Wang ,  Tiruchirapalli Arunagiri ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Boyd ,  Mikhail Korolik ,  Arthur M. Howald ,  William Thie ,  Praveen Nalla

IPC: H01L21/44 ,  H01L21/31 ,  H01L21/469 ,  H01L21/24 ,  H01L21/40

CPC classification number: H01L21/02074

Abstract: Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a thermal treatment in a reducing environment. The thermal treatment in the oxidizing environment both removes residues and oxidizes exposed copper surfaces to form a cupric oxide layer. The thermal treatment in the reducing environment then reduces the cupric oxide to elemental copper. This leaves the exposed copper clean and in condition for further processing, such as electroless plating.

Abstract translation: 提供了化学机械抛光后的半导体晶片清洗方法。 一种示例性方法将晶片暴露于氧化环境中的热处理，然后在还原环境中进行热处理。 在氧化环境中的热处理既去除残留物，又氧化暴露的铜表面以形成氧化铜层。 然后，在还原环境中的热处理将氧化铜还原为元素铜。 这使得暴露的铜清洁并进行进一步处理，例如化学镀。

公开(公告)号：US07480571B2

公开(公告)日：2009-01-20

申请号：US10966549

申请日：2004-10-15

Applicant: Arthur M. Howald ,  Andras Kuthi ,  Andrew D. Bailey, III

Inventor： Arthur M. Howald ,  Andras Kuthi ,  Andrew D. Bailey, III

IPC: C23F1001/00

CPC classification number: H01J37/32082 ,  H01J37/32183 ,  H01J37/3299 ,  H03H7/40 ,  H05H1/46

Abstract: Methods for improving the stability of RF power delivery to a plasma load are disclosed. The method includes adding an RF resistor and/or a power attenuator at one of many specific locations in the RF power system to lower the impedance derivatives while keeping the matching circuit substantially in tune with the RF transmission line.

Abstract translation: 公开了用于提高RF功率输送到等离子体负载的稳定性的方法。 该方法包括在RF功率系统中的许多特定位置之一处添加RF电阻器和/或功率衰减器，以降低阻抗导数，同时保持匹配电路与RF传输线基本一致。

公开(公告)号：US20080280456A1

公开(公告)日：2008-11-13

申请号：US11801269

申请日：2007-05-08

Applicant: Zhonghui Alex Wang ,  Tiruchirapalli Arunagiri ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Boyd ,  Mikhail Korolik ,  Arthur M. Howald ,  William Thie ,  Praveen Nalla

Inventor： Zhonghui Alex Wang ,  Tiruchirapalli Arunagiri ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Boyd ,  Mikhail Korolik ,  Arthur M. Howald ,  William Thie ,  Praveen Nalla

IPC: H01L21/00

CPC classification number: H01L21/02074

Abstract: Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a thermal treatment in a reducing environment. The thermal treatment in the oxidizing environment both removes residues and oxidizes exposed copper surfaces to form a cupric oxide layer. The thermal treatment in the reducing environment then reduces the cupric oxide to elemental copper. This leaves the exposed copper clean and in condition for further processing, such as electroless plating.

Abstract translation: 提供了化学机械抛光后的半导体晶片清洗方法。 一种示例性方法将晶片暴露于氧化环境中的热处理，然后在还原环境中进行热处理。 在氧化环境中的热处理既去除残留物，又氧化暴露的铜表面以形成氧化铜层。 然后，在还原环境中的热处理将氧化铜还原为元素铜。 这使得暴露的铜清洁并进行进一步处理，例如化学镀。

公开(公告)号：US20070292604A1

公开(公告)日：2007-12-20

申请号：US11513634

申请日：2006-08-30

Applicant: Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

Inventor： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

IPC: B05D3/00 ,  B05D5/12 ,  B05D1/18 ,  C04B41/00 ,  C23C14/00 ,  B05C13/02 ,  B29C71/04

CPC classification number: B05C13/02 ,  B05D3/002 ,  C23C18/1651 ,  C23C18/1851 ,  C23C18/1893 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862

Abstract: The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve metal-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce an improved metal-to-metal interface, more specifically copper-to-cobalt-alloy interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of a copper interconnect of the substrate in an integrated system to improve electromigration performance of the copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. An exemplary system to practice the exemplary method described above is also provided.

Abstract translation: 这些实施方案通过提供改进的工艺和系统来提供改进的金属 - 金属界面，更具体地说是铜 - 金属界面，从而满足增强电迁移性能，提供较低的金属电阻率以及改善铜互连的金属 - 金属界面粘附的需要， 钴合金界面。 提供了一种制备基板的基板表面的示例性方法，以在集成系统中选择性地在基板的铜互连的铜表面上沉积钴合金材料的薄层，以改善铜互连的电迁移性能。 该方法包括从集成系统中的衬底表面去除污染物和金属氧化物，并且在去除集成系统中的污染物和金属氧化物之后，使用还原环境来修复衬底表面。 该方法还包括在修复基板表面之后，在集成系统中的铜互连的铜表面上选择性地沉积钴合金材料的薄层。 还提供了用于实践上述示例性方法的示例性系统。

公开(公告)号：US06400458B1

公开(公告)日：2002-06-04

申请号：US09409840

申请日：1999-09-30

Applicant: Arthur M. Howald

Inventor： Arthur M. Howald

IPC: G01B1102

CPC classification number: B24B37/013 ,  H01J37/32935 ,  H01L22/26

Abstract: A method for monitoring a device fabrication process. The method includes etching into a wafer disposed inside a chamber and detecting the intensity of a portion of a light reflected from a surface of the wafer and further scattered at a scattering inside surface of the chamber.

Abstract translation: 一种用于监测器件制造工艺的方法。 该方法包括蚀刻到设置在室内的晶片中，并且检测从晶片的表面反射的光的一部分的强度，并进一步在室的散射内表面散射。

公开(公告)号：US08747960B2

公开(公告)日：2014-06-10

申请号：US11513446

申请日：2006-08-30

Applicant: Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Johan Vertommen ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

Inventor： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Johan Vertommen ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

IPC: C23C14/02 ,  H05H1/00

CPC classification number: C23C18/1651 ,  C23C18/1893 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862 ,  Y02P70/605

Abstract: The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve silicon-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce a silicon-to-metal interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a layer of a metal on a silicon or polysilicon surface of the substrate to form a metal silicide in an integrated system is provided. The method includes removing organic contaminants from the substrate surface in the integrated system, and reducing the silicon or polysilicon surface in the integrated system after removing organic contaminants to convert silicon oxide on the silicon or polysilicon surface to silicon, wherein after reducing the silicon or polysilicon surface, the substrate is transferred and processed in controlled environment to prevent the formation of silicon oxide, the silicon or polysilicon surface is reduced to increase the selectivity of the metal on the silicon surface. The method further includes selectively depositing the layer of the metal on the silicon or polysilicon surface of substrate in the integrated system after reducing the silicon or polysilicon surface. An exemplary system to practice the exemplary method described above is also provided.

Abstract translation: 这些实施方案通过提供产生硅 - 金属界面的改进的工艺和系统来满足增强电迁移性能，提供较低金属电阻率以及改进铜互连的硅 - 金属界面粘附的需要。 提供了制备衬底的衬底表面以在衬底的硅或多晶硅表面上选择性地沉积金属层以在集成系统中形成金属硅化物的示例性方法。 该方法包括从集成系统中的衬底表面去除有机污染物，以及在去除有机污染物之后减少集成系统中的硅或多晶硅表面，以将硅或多晶硅表面上的氧化硅转化为硅，其中在还原硅或多晶硅之后 表面，在受控环境中转移和处理衬底以防止形成氧化硅，减少硅或多晶硅表面以增加金属在硅表面上的选择性。 该方法还包括在减少硅或多晶硅表面之后，在集成系统中的衬底的硅或多晶硅表面上选择性地沉积金属层。 还提供了用于实践上述示例性方法的示例性系统。

公开(公告)号：US08454794B2

公开(公告)日：2013-06-04

申请号：US13524734

申请日：2012-06-15

Applicant: Arthur M. Howald ,  Andras Kuthi

Inventor： Arthur M. Howald ,  Andras Kuthi

IPC: H01L21/306 ,  C23C16/00

CPC classification number: H01J37/321 ,  H01J37/32183

Abstract: An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding connected in series with a capacitor.

Abstract translation: 天线包括响应于RF源的激励端子，以将RF电磁场提供给处理真空室中的工件的等离子体。 线圈包括具有耦合到激励端子的初级绕组的变压器和与电容器串联连接的多匝等离子体激发次级绕组。

公开(公告)号：US08277604B2

公开(公告)日：2012-10-02

申请号：US13020170

申请日：2011-02-03

Applicant: Arthur M. Howald ,  Andras Kuthi

Inventor： Arthur M. Howald ,  Andras Kuthi

IPC: C23C16/00 ,  H01L21/306

CPC classification number: H01J37/321 ,  H01J37/32183

Abstract: An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding connected in series with a capacitor.

Abstract translation: 天线包括响应于RF源的激励端子，以将RF电磁场提供给处理真空室中的工件的等离子体。 线圈包括具有耦合到激励端子的初级绕组的变压器和与电容器串联连接的多匝等离子体激发次级绕组。

公开(公告)号：US08241701B2

公开(公告)日：2012-08-14

申请号：US11514038

申请日：2006-08-30

Applicant: Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

Inventor： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

IPC: B05D5/12

CPC classification number: H01L21/7685 ,  C23C18/1632 ,  C23C18/1651 ,  C23C18/1844 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76871 ,  H01L21/76879

Abstract: The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve metal-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce an improved metal-to-metal interface, more specifically barrier-to-copper interface. An exemplary method of preparing a substrate surface of a substrate to deposit a metallic barrier layer to line a copper interconnect structure of the substrate and to deposit a thin copper seed layer on a surface of the metallic barrier layer in an integrated system to improve electromigration performance of the copper interconnect is provided. The method includes cleaning an exposed surface of a underlying metal to remove surface metal oxide in the integrated system, wherein the underlying metal is part of a underlying interconnect electrically connected to the copper interconnect. The method also includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, wherein after depositing the metallic barrier layer, the substrate is transferred and processed in controlled environment to prevent the formation of metallic barrier oxide. The method further includes depositing the thin copper seed layer in the integrated system, and depositing a gap-fill copper layer over the thin copper seed layer in the integrated system. An exemplary system to practice the exemplary method described above is also provided.

Abstract translation: 这些实施方案通过提供改进的工艺和系统来提供改进的金属 - 金属界面，更具体地说是阻隔层，提高了电迁移性能，提供较低的金属电阻率，以及改进铜互连的金属 - 金属界面粘附的需要， 到铜接口。 一种制备衬底的衬底表面的示例性方法，以沉积金属阻挡层以对衬底的铜互连结构进行排列并且在集成系统中在金属阻挡层的表面上沉积薄铜籽晶层以改善电迁移性能 的铜互连。 该方法包括清洁底层金属的暴露表面以去除集成系统中的表面金属氧化物，其中下面的金属是与铜互连电连接的底层互连件的一部分。 该方法还包括沉积金属阻挡层以在集成系统中对铜互连结构进行排列，其中在沉积金属阻挡层之后，将基底在受控环境中转移和加工以防止形成金属阻挡氧化物。 该方法还包括在集成系统中沉积薄铜籽晶层，以及在集成系统中的薄铜种子层上沉积间隙填充铜层。 还提供了用于实践上述示例性方法的示例性系统。