利索-全球专利检索

  1. Login
  2. Sign Up

Search Results

8 records (took 0.014 seconds)

    Noninvasive Motion and Respiration Monitoring System
    2.
    发明申请
    Noninvasive Motion and Respiration Monitoring System 有权
    无创运动和呼吸监测系统

    公开(公告)号：US20100109875A1

    公开(公告)日：2010-05-06

    申请号：US12576230

    申请日：2009-10-08

    Applicant: Arturo A. Ayon ,  Christopher Berg ,  David C. Valdez

    Inventor： Arturo A. Ayon ,  Christopher Berg ,  David C. Valdez

    IPC: G08B23/00 ,  G06F17/14

    CPC classification number: A61B5/113 ,  A61B5/4818 ,  A61B5/6892 ,  A61B5/7257

    Abstract: A non-invasive motion and respiration monitor receives impulses from a subject's movement, heartbeat, and respiration. The raw signal is biased and digitized, and a signal processor applies a Fast Fourier Transform to the signal. The transformed signal is filtered to isolate the component representing heart rate from the component representing respiration. An Inverse Fast Fourier Transform is then applied to the component signals, which are sent to a processor. The processor is programmed to detect irregularities in the respiration and heart rate. If severe irregularities or complete cessation is detected in either signal, a mechanical stimulator is actuated to try to stimulate the subject, and an alarm is sounded to alert a caregiver such as a parent or nurse.

    Abstract translation: 非侵入性运动和呼吸监测器接收受试者运动，心跳和呼吸的冲动。 原始信号被偏置和数字化，并且信号处理器对信号应用快速傅立叶变换。 过滤转化的信号以将表示心率的组分与表示呼吸的组分隔离。 然后将快速傅里叶逆变换应用于分量信号，分量信号被发送到处理器。 处理器被编程以检测呼吸和心率的不规则性。 如果在任一信号中检测到严重的不规则或完全停止，则启动机械刺激器以尝试刺激受试者，并且发出警报以警告诸如父母或护士的护理者。

    Plasma etch techniques for fabricating silicon structures from a substrate
    3.
    发明授权
    Plasma etch techniques for fabricating silicon structures from a substrate 失效
    用于从衬底制造硅结构的等离子体蚀刻技术

    公开(公告)号：US06399516B1

    公开(公告)日：2002-06-04

    申请号：US09430565

    申请日：1999-10-29

    Applicant: Arturo A. Ayon

    Inventor： Arturo A. Ayon

    IPC: H01L213065

    CPC classification number: B81C1/0015 ,  B81C1/00246 ,  B81C1/00936 ,  B81C2201/0132 ,  B81C2203/0778 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/76251

    Abstract: Provided is a method for producing a silicon element. A substrate configuration is provided that includes a silicon layer having a first face and a thickness corresponding to a specified thickness of the silicon element to be formed. The configuration includes a layer of an electrically-insulating material located below and adjacent to the silicon layer. A substantially vertical trench is etched from the first face in the silicon layer to a depth that exposes the insulating layer. Then the trench in the silicon layer is exposed to a gaseous environment that is reactive with silicon, to substantially lateral etch the silicon layer preferentially at the depth of the insulating layer along a surface of the insulating layer. This lateral etch is continued for a duration that results in release of a silicon element over the insulating layer. Also provided is a process for etching an angled trench in a silicon layer. Here, a substrate configuration is provided including a first silicon layer having at least one trench etched through the first silicon layer, and layer of an electrically-insulating material located below and adjacent to the silicon layer. The insulating layer includes an aperture that is located at a non-central location with respect to the trench and that corresponds to a prespecified trench angle. Included is a second silicon layer, in which the angled trench is to be formed, below and adjacent to the insulating layer. The trench in the first silicon layer is exposed to a gaseous environment that is reactive with silicon to etch that region of the second silicon layer that is exposed by the aperture in the insulating layer to a selected angled trench depth and prespecified trench angle.

    Abstract translation: 提供一种硅元件的制造方法。 提供了一种衬底结构，其包括具有第一面的硅层和对应于待形成的硅元件的规定厚度的厚度。 该配置包括位于硅层下方并与硅层相邻的电绝缘材料层。 从硅层中的第一面蚀刻基本上垂直的沟槽到暴露绝缘层的深度。 然后硅层中的沟槽暴露于与硅反应的气体环境中，以在绝缘层的绝缘层的表面的绝缘层的深度处优先地基本上横向蚀刻硅层。 该横向蚀刻持续一段时间，导致硅元件在绝缘层上的释放。 还提供了用于蚀刻硅层中的成角度沟槽的工艺。 这里，提供了一种衬底配置，其包括具有通过第一硅层蚀刻的至少一个沟槽的第一硅层和位于硅层下方并与硅层相邻的电绝缘材料层。 绝缘层包括相对于沟槽位于非中心位置并且对应于预先指定的沟槽角度的孔。 包括第二硅层，其中将形成在绝缘层下方和邻近的成角度的沟槽。 第一硅层中的沟槽暴露于与硅反应的气体环境，以将由绝缘层中的孔露出的第二硅层的区域蚀刻到选定的倾斜沟槽深度和预定的沟槽角度。

    Noninvasive motion and respiration monitoring system
    8.
    发明授权
    Noninvasive motion and respiration monitoring system 有权
    无创运动和呼吸监测系统

    公开(公告)号：US08502679B2

    公开(公告)日：2013-08-06

    申请号：US12576230

    申请日：2009-10-08

    Applicant: Arturo A. Ayon ,  Christopher Berg ,  David C. Valdez

    Inventor： Arturo A. Ayon ,  Christopher Berg ,  David C. Valdez

    IPC: G08B23/00

    CPC classification number: A61B5/113 ,  A61B5/4818 ,  A61B5/6892 ,  A61B5/7257

    Abstract: A non-invasive motion and respiration monitor receives impulses from a subject's movement, heartbeat, and respiration. The raw signal is biased and digitized, and a signal processor applies a Fast Fourier Transform to the signal. The transformed signal is filtered to isolate the component representing heart rate from the component representing respiration. An Inverse Fast Fourier Transform is then applied to the component signals, which are sent to a processor. The processor is programmed to detect irregularities in the respiration and heart rate. If severe irregularities or complete cessation is detected in either signal, a mechanical stimulator is actuated to try to stimulate the subject, and an alarm is sounded to alert a caregiver such as a parent or nurse.

    Abstract translation: 非侵入性运动和呼吸监测器接收受试者运动，心跳和呼吸的冲动。 原始信号被偏置和数字化，并且信号处理器对信号应用快速傅立叶变换。 过滤转化的信号以将表示心率的组分与表示呼吸的组分隔离。 然后将快速傅里叶逆变换应用于分量信号，分量信号被发送到处理器。 处理器被编程以检测呼吸和心率的不规则性。 如果在任一信号中检测到严重的不规则或完全停止，则启动机械刺激器以尝试刺激受试者，并且发出警报以警告诸如父母或护士的护理者。

Patent Agency Ranking