公开(公告)号：US06759344B2

公开(公告)日：2004-07-06

申请号：US10309401

申请日：2002-12-03

申请人： Nobuo Matsuki ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato

发明人： Nobuo Matsuki ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato

IPC分类号： H01L2131

CPC分类号： C23C16/45523 ,  C23C16/401

摘要： An insulation film is formed on a semiconductor substrate by a method including the steps of: (i) introducing a source gas comprising a compound composed of at least Si, C, and H into a chamber; (ii) introducing in pulses an oxidizing gas into the chamber, wherein the source gas and the oxidizing gas form a reaction gas; and (iii) forming an insulation film on a semiconductor substrate by plasma treatment of the reaction gas. The plasma treatment may be plasma CVD processing.

摘要翻译： 通过包括以下步骤的方法在半导体衬底上形成绝缘膜：（i）将包含至少Si，C和H的化合物的源气体引入室中; （ii）将脉冲中的氧化气体引入所述室中，其中所述源气体和所述氧化气体形成反应气体; 和（iii）通过等离子体处理反应气体在半导体衬底上形成绝缘膜。 等离子体处理可以是等离子体CVD处理。

公开(公告)号：US06881683B2

公开(公告)日：2005-04-19

申请号：US10317239

申请日：2002-12-11

申请人： Nobuo Matsuki ,  Yasuyoshi Hyodo ,  Masashi Yamaguchi ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato ,  Shinya Kaneko ,  Devendra Kumar ,  Seijiro Umemoto

发明人： Nobuo Matsuki ,  Yasuyoshi Hyodo ,  Masashi Yamaguchi ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato ,  Shinya Kaneko ,  Devendra Kumar ,  Seijiro Umemoto

IPC分类号： B05D7/24 ,  C09D4/00 ,  C23C16/30 ,  C23C16/40 ,  H01L21/312 ,  H01L23/29 ,  H01L21/469

CPC分类号： B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

摘要： An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The silicon-containing hydrocarbon compound includes a cyclosiloxan compound or a linear siloxan compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

摘要翻译： 通过汽化含硅烃化合物以形成源气体，将源气体和惰性气体等添加气体和氧化性气体构成的反应气体导入到半导体基板的反应空间，形成绝缘膜， 等离子体CVD装置。 含硅烃化合物包括作为基础结构的环硅氧烷化合物或线性硅氧烷化合物，其具有使用基础结构的形成低聚物的反应性基团。 反应气体在反应空间中的停留时间通过降低反应气体的总流量而延长，从而形成低介电常数的硅氧烷聚合物膜。

公开(公告)号：US06852650B2

公开(公告)日：2005-02-08

申请号：US10288641

申请日：2002-11-05

申请人： Nobuo Matsuki ,  Yasuyoshi Hyodo ,  Masashi Yamaguchi ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato

发明人： Nobuo Matsuki ,  Yasuyoshi Hyodo ,  Masashi Yamaguchi ,  Yoshinori Morisada ,  Atsuki Fukazawa ,  Manabu Kato

IPC分类号： B05D7/24 ,  C09D4/00 ,  C23C16/30 ,  C23C16/40 ,  H01L21/312 ,  H01L23/29 ,  H01L21/31

CPC分类号： B05D1/62 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08G77/00 ,  H01L2924/00

摘要： An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

摘要翻译： 通过汽化含硅烃化合物以形成源气体，将源气体和惰性气体等添加气体和氧化性气体构成的反应气体导入到半导体基板的反应空间，形成绝缘膜， 等离子体CVD装置。 反应气体在反应空间中的停留时间通过降低反应气体的总流量而延长，从而形成低介电常数的硅氧烷聚合物膜。

公开(公告)号：US08080282B2

公开(公告)日：2011-12-20

申请号：US11463247

申请日：2006-08-08

申请人： Atsuki Fukazawa ,  Manabu Kato ,  Nobuo Matsuki

发明人： Atsuki Fukazawa ,  Manabu Kato ,  Nobuo Matsuki

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： C23C16/325 ,  C23C16/30

摘要： A method for forming a silicon carbide film containing Si, C, O, H, and optionally N on a substrate placed in a reaction space, includes the steps of: introducing into the reaction space a precursor containing Si, C, O, and H and having at least one Si—O bond in its molecule; introducing into the reaction space an inert gas; applying RF power in the reaction space, wherein a ratio of a flow rate (sccm) of the inert gas to the RF power (W/cm2) is controlled at 30-850; and thereby depositing on the substrate a silicon carbide film containing Si, C, O, H, and optionally N.

摘要翻译： 在置于反应空间的基板上形成含有Si，C，O，H和任选的N的碳化硅膜的方法包括以下步骤：向反应空间内导入含有Si，C，O和H的前体 并在其分子中具有至少一个Si-O键; 在反应空间内引入惰性气体; 在反应空间中施加RF功率，其中惰性气体的流量（sccm）与RF功率（W / cm 2）的比率控制在30-850℃; 从而在衬底上沉积含有Si，C，O，H和任选的N的碳化硅膜。

公开(公告)号：US20050048797A1

公开(公告)日：2005-03-03

申请号：US10932816

申请日：2004-09-02

申请人： Atsuki Fukazawa ,  Kenichi Kagami ,  Manabu Kato

发明人： Atsuki Fukazawa ,  Kenichi Kagami ,  Manabu Kato

IPC分类号： C23C16/42 ,  C23C16/40 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01L21/31 ,  H01L21/316 ,  H05H1/24 ,  H01L21/469

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31633

摘要： A method for forming a thin film includes: supplying an additive gas, a dilution gas, and a silicon-containing source gas into a reaction chamber wherein a substrate is placed; forming a thin film on the substrate by plasma CVD under a given pressure with a given intensity of radio-frequency (RF) power from a first point in time to a second point in time; at the second point in time, stopping the supply of the silicon-containing source gas; and at the second point in time, beginning reducing but not stopping the RF power, and beginning reducing the pressure, wherein the reduction of the RF power and the reduction of the pressure are synchronized up to a third point in time.

摘要翻译： 形成薄膜的方法包括：将添加气体，稀释气体和含硅源气体供给到其中放置基板的反应室中; 通过等离子体CVD在给定的压力下以从第一时间点到第二时间点的给定强度的射频（RF）功率在衬底上形成薄膜; 在第二时间点停止含硅源气体的供给; 并且在第二时间点，开始减少但不停止RF功率，并开始降低压力，其中RF功率的降低和压力的降低被同步到第三时间点。

公开(公告)号：US07229935B2

公开(公告)日：2007-06-12

申请号：US10932816

申请日：2004-09-02

申请人： Atsuki Fukazawa ,  Kenichi Kagami ,  Manabu Kato

发明人： Atsuki Fukazawa ,  Kenichi Kagami ,  Manabu Kato

IPC分类号： H01L21/471 ,  C23C16/22

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31633

摘要： A method for forming a thin film includes: supplying an additive gas, a dilution gas, and a silicon-containing source gas into a reaction chamber wherein a substrate is placed; forming a thin film on the substrate by plasma CVD under a given pressure with a given intensity of radio-frequency (RF) power from a first point in time to a second point in time; at the second point in time, stopping the supply of the silicon-containing source gas; and at the second point in time, beginning reducing but not stopping the RF power, and beginning reducing the pressure, wherein the reduction of the RF power and the reduction of the pressure are synchronized up to a third point in time.

摘要翻译： 形成薄膜的方法包括：将添加气体，稀释气体和含硅源气体供给到其中放置基板的反应室中; 通过等离子体CVD在给定的压力下以从第一时间点到第二时间点的给定强度的射频（RF）功率在衬底上形成薄膜; 在第二时间点停止含硅源气体的供给; 并且在第二时间点，开始减少但不停止RF功率，并开始降低压力，其中RF功率的降低和压力的降低被同步到第三时间点。

公开(公告)号：US08895200B2

公开(公告)日：2014-11-25

申请号：US13125770

申请日：2010-08-02

申请人： Manabu Kato ,  Michihito Tanaka ,  Shuya Kawahara

发明人： Manabu Kato ,  Michihito Tanaka ,  Shuya Kawahara

IPC分类号： H01M8/04 ,  H01M8/10

CPC分类号： H01M8/04225 ,  H01M8/04223 ,  H01M8/04228 ,  H01M8/0432 ,  H01M8/0444 ,  H01M8/04559 ,  H01M8/04679 ,  H01M8/242 ,  H01M2008/1095 ,  Y02E60/50

摘要： A fuel cell system having a fuel cell includes a power generation-time gas supplier that supplies hydrogen-containing fuel gas to an anode of the fuel cell and supplies an oxygen-containing oxidizing gas to a cathode of the fuel cell during power generation of the fuel cell. The fuel cell system also includes an anode potential rise information acquirer that acquires anode potential rise information, which represents information regarding a status of an anode potential rise of the fuel cell, after termination of supplies of the fuel gas and the oxidizing gas by the power generation-time gas supplier. The fuel cell system further includes an anode morphology variation deriver that derives an anode morphology variation representing a degree of a morphology change of a catalyst metal included in the anode, based on the anode potential rise information.

摘要翻译： 具有燃料电池的燃料电池系统包括发电时气体供给器，其向所述燃料电池的阳极供给含氢燃料气体，并且在所述燃料电池的发电期间向所述燃料电池的阴极供给含氧氧化气体 燃料电池。 燃料电池系统还包括阳极电位上升信息获取器，该阳极电位上升信息获取器在燃料气体和氧化气体通过电力供应终止之后获取阳极电位上升信息，其表示关于燃料电池的阳极电位上升的状态的信息 发电时间气体供应商。 燃料电池系统还包括阳极形态变化导流器，其基于阳极电位上升信息导出代表阳极中包括的催化剂金属的形态变化程度的阳极形态变化。

公开(公告)号：US20140114628A1

公开(公告)日：2014-04-24

申请号：US14149540

申请日：2014-01-07

申请人： Hiroko Kimura ,  Naoki Takehiro ,  Manabu Kato ,  Kazutaka Kimura

发明人： Hiroko Kimura ,  Naoki Takehiro ,  Manabu Kato ,  Kazutaka Kimura

IPC分类号： G06F17/50

CPC分类号： H01M8/04992 ,  G01D21/00 ,  G01N15/0266 ,  G06F15/00 ,  G06F17/10 ,  G06F17/5009 ,  G06F19/70 ,  H01M4/90 ,  H01M4/9041 ,  H01M8/04119 ,  H01M2008/1095 ,  Y02E60/50

摘要： A particle size distribution creating method includes a particle size range determining step, an integrating step of integrating the frequency of appearance of particles within the particle size range determined in the particle size range determining step, a division point determining step of determining particle sizes that provide division points, using the integral of the frequency of appearance obtained in the integrating step, and a typical point determining step of determining the minimum particle size, maximum particle size and the particle sizes of the division points as typical points. This method is characterized by assuming a particle size distribution which contains particles having the particle sizes of the respective typical points and is plotted such that the frequency of appearance of the particles having the particle size of each of the typical points is equal to the integral over each of the regions defined by the typical points, and obtaining the assumed particle size distribution as a particle size distribution model.

摘要翻译： 粒度分布生成方法包括粒度范围确定步骤，将在粒度范围确定步骤中确定的粒度范围内的粒子出现频度整合的积分步骤，确定提供的粒度的分割点确定步骤 使用在积分步骤中获得的外观频率的积分的分割点以及作为典型点确定分割点的最小粒径，最大粒径和粒径的典型点确定步骤。 该方法的特征在于假定粒度分布包含具有各个典型点的粒径的粒子，并且绘制为具有每个典型点的粒径的粒子的出现频率等于 每个区域由典型点定义，并获得假定的粒度分布作为粒度分布模型。

公开(公告)号：US08681406B2

公开(公告)日：2014-03-25

申请号：US13109415

申请日：2011-05-17

申请人： Manabu Kato

发明人： Manabu Kato

IPC分类号： G02B26/08

CPC分类号： B41J2/473 ,  G02B13/0005 ,  G02B26/123 ,  G02B26/125

摘要： A scanning optical apparatus includes a light source, a deflecting element for deflecting a beam of light emitted from the light source, an optical device for causing the beam of light emitted from the light source to be imaged into a linear shape long in the main scanning direction on the deflecting surface of the deflecting element. The optical device is comprised of a first optical element and a second optical element, and a third optical element for causing the beam of light deflected by the deflecting element to be imaged into a spot-like shape on a surface to be scanned. The third optical element includes a single lens, the opposite lens surfaces of which both include a toric surface of an aspherical surface shape in the main scanning plane, the curvatures of the opposite lens surfaces in the sub scanning plane being continuously varied from the on-axis toward the off-axis in the effective portion of the lens.

摘要翻译： 扫描光学装置包括光源，用于偏转从光源发射的光束的偏转元件，用于使从光源发射的光束在主扫描中长时间成像为直线形状的光学装置 在偏转元件的偏转表面上的方向。 光学装置包括第一光学元件和第二光学元件，以及第三光学元件，用于使由偏转元件偏转的光束在待扫描的表面上成像为点状。 第三光学元件包括单个透镜，其相对的透镜表面在主扫描平面中都包括非球面形状的复曲面，副扫描平面中的相对透镜表面的曲率从开放式 轴在透镜的有效部分中偏离轴。

公开(公告)号：US20140030594A1

公开(公告)日：2014-01-30

申请号：US14111041

申请日：2012-04-10

申请人： Tomoyuki Sakai ,  Tsukasa Maruyama ,  Kaoru Doi ,  Manabu Kato

发明人： Tomoyuki Sakai ,  Tsukasa Maruyama ,  Kaoru Doi ,  Manabu Kato

IPC分类号： H01G11/32 ,  H01M4/60 ,  H01M4/583 ,  H01M4/36

CPC分类号： H01G11/32 ,  H01G11/30 ,  H01G11/38 ,  H01G11/48 ,  H01G11/50 ,  H01M4/364 ,  H01M4/583 ,  H01M4/587 ,  H01M4/602 ,  H01M10/0525 ,  Y02E60/122 ,  Y02E60/13

摘要： The purpose of the present invention is to provide: an electric double-layer capacitor, a lithium ion secondary battery, and a lithium ion capacitor, each of which has excellent cycle characteristics; an electrode material which is capable of providing the electric double-layer capacitor, the lithium ion secondary battery, and the lithium ion capacitor; and a composite which is used in the electrode material. The composite of the present invention is a composite produced by compositing from 0.5 to 5 parts by mass of nitrogen atom-containing conductive polymer per 100 parts by mass of porous carbon material. The composite of the present invention is a composite where the peak area ratio (nitrogen/carbon ratio) of peak area derived from nitrogen atoms to peak area derived from carbon atoms in the spectrum by X-ray photoelectron spectroscopy becomes 0.005 to 0.05.

摘要翻译： 本发明的目的是提供：具有优异的循环特性的双电层电容器，锂离子二次电池和锂离子电容器; 能够提供双电层电容器，锂离子二次电池和锂离子电容器的电极材料; 以及在电极材料中使用的复合体。 本发明的复合体是相对于100质量份多孔碳材料，将0.5〜5质量份含氮原子的导电性聚合物复合而成的复合体。 本发明的复合体是通过X射线光电子能谱测定从氮原子得到的峰面积与衍生自光谱中的碳原子的峰面积的峰面积比（氮/碳比）为0.005〜0.05的复合体。