公开(公告)号：US09412895B2

公开(公告)日：2016-08-09

申请号：US13612687

申请日：2012-09-12

Applicant: Young-Jin Kim ,  Doo-Youl Lee ,  Young-Su Kim ,  Chan-Bin Mo ,  Young-Sang Park ,  Jae-Ho Shin ,  Sang-Jin Park ,  Sang-Won Seo ,  Min-Chul Song ,  Dong-Seop Kim

Inventor： Young-Jin Kim ,  Doo-Youl Lee ,  Young-Su Kim ,  Chan-Bin Mo ,  Young-Sang Park ,  Jae-Ho Shin ,  Sang-Jin Park ,  Sang-Won Seo ,  Min-Chul Song ,  Dong-Seop Kim

IPC: H01L31/18 ,  H01L31/068

CPC classification number: H01L31/1804 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted.According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.

Abstract translation: 一种制造光电器件的方法，所述方法包括：通过第一离子注入在半导体衬底上形成第一半导体层; 通过第二离子注入在所述第一半导体层的一部分上形成具有反向导电类型的第二半导体层; 并进行热处理以恢复半导体衬底的晶格损伤并激活其中注入离子的掺杂剂。 根据本发明的一个或多个实施例，提供了一种光电装置的制造数量减少的光电装置和输出特性的改善。

公开(公告)号：US20130267059A1

公开(公告)日：2013-10-10

申请号：US13612687

申请日：2012-09-12

Applicant: Young-Jin Kim ,  Doo-Youl Lee ,  Young-Su Kim ,  Chan-Bin Mo ,  Young-Sang Park ,  Jae-Ho Shin ,  Sang-Jin Park ,  Sang-Won Seo ,  Min-Chul Song ,  Dong-Seop Kim

Inventor： Young-Jin Kim ,  Doo-Youl Lee ,  Young-Su Kim ,  Chan-Bin Mo ,  Young-Sang Park ,  Jae-Ho Shin ,  Sang-Jin Park ,  Sang-Won Seo ,  Min-Chul Song ,  Dong-Seop Kim

IPC: H01L31/18

CPC classification number: H01L31/1804 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted.According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.

Abstract translation: 一种制造光电器件的方法，所述方法包括：通过第一离子注入在半导体衬底上形成第一半导体层; 通过第二离子注入在所述第一半导体层的一部分上形成具有反向导电类型的第二半导体层; 并进行热处理以恢复半导体衬底的晶格损伤并激活其中注入离子的掺杂剂。 根据本发明的一个或多个实施例，提供了一种光电装置的制造数量减少的光电装置和输出特性的改善。

公开(公告)号：US07807092B2

公开(公告)日：2010-10-05

申请号：US10780863

申请日：2004-02-19

Applicant: Soon Hyung Hong ,  Seung Il Cha ,  Kyung Tae Kim ,  Kyong Ho Lee ,  Chan Bin Mo

Inventor： Soon Hyung Hong ,  Seung Il Cha ,  Kyung Tae Kim ,  Kyong Ho Lee ,  Chan Bin Mo

IPC: B06B1/02 ,  C04B35/64 ,  C04B35/52

CPC classification number: C09C1/44 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  C01B2202/06 ,  C01B2202/28 ,  C01B2202/34 ,  C01B2202/36 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/13 ,  C01P2004/133 ,  C04B35/62635 ,  C04B35/6264 ,  C04B35/62655 ,  C04B35/6268 ,  C04B2235/3217 ,  C04B2235/3258 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3418 ,  C04B2235/526 ,  C04B2235/5264 ,  C04B2235/5288 ,  C09K3/1409 ,  C09K3/1418

Abstract: The invention relates to methods for fabricating ceramic nanocomposite powders, comprising a ceramic matrix and carbon nanotubes homogeneously dispersed in the ceramic matrix. The ceramic nanocomposite powders of the invention can prevent property deterioration due to agglomeration of carbon nanotubes.

Abstract translation: 本发明涉及制造陶瓷纳米复合粉末的方法，其包括均匀分散在陶瓷基体中的陶瓷基体和碳纳米管。 本发明的陶瓷纳米复合粉末可以防止碳纳米管凝集引起的特性劣化。

公开(公告)号：US09293614B2

公开(公告)日：2016-03-22

申请号：US13565828

申请日：2012-08-03

Applicant: Min-Seok Oh ,  Doo-Youl Lee ,  Young-Jin Kim ,  Min Park ,  Yun-Seok Lee ,  Nam-Kyu Song ,  Dong-Seop Kim ,  Cho-Young Lee ,  Chan-Bin Mo ,  Young-Su Kim ,  Hoon-Ha Jeon ,  Yeon-Ik Jang ,  Jun-Ki Hong ,  Young-Sang Park ,  Chan-Yoon Jung

Inventor： Min-Seok Oh ,  Doo-Youl Lee ,  Young-Jin Kim ,  Min Park ,  Yun-Seok Lee ,  Nam-Kyu Song ,  Dong-Seop Kim ,  Cho-Young Lee ,  Chan-Bin Mo ,  Young-Su Kim ,  Hoon-Ha Jeon ,  Yeon-Ik Jang ,  Jun-Ki Hong ,  Young-Sang Park ,  Chan-Yoon Jung

IPC: H01L31/0224 ,  H01L31/0352 ,  H01L31/05 ,  H01L31/068 ,  H01L31/0747

CPC classification number: H01L31/03529 ,  H01L31/0224 ,  H01L31/022408 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0747 ,  Y02E10/547

Abstract: A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.

Abstract translation: 一种太阳能电池，包括第一导电型半导体衬底; 在半导体衬底的前表面上的第一本征半导体层; 在所述第一本征半导体层的至少一个表面上的第一导电类型的第一半导体层; 在所述半导体衬底的背面上的第二导电型第二半导体层; 在所述第二半导体层和所述半导体衬底之间的第二本征半导体层; 在所述半导体衬底的背面上的第一导电型第三半导体层，所述第三半导体层与所述第二半导体层间隔开; 以及在第三半导体层和半导体衬底之间的第三本征半导体层。

公开(公告)号：US20130125964A1

公开(公告)日：2013-05-23

申请号：US13569217

申请日：2012-08-08

Applicant: Chan-Bin MO ,  Doo-Youl LEE ,  Young-Jin KIM ,  Min-Seok OH ,  Sung-Chan PARK ,  Yun-Seok LEE ,  Nam-Kyu Song ,  Dong-Seop KIM ,  Min-Sung KIM ,  Cho-Young LEE ,  Young-su KIM ,  Young-Sang PARK

Inventor： Chan-Bin MO ,  Doo-Youl LEE ,  Young-Jin KIM ,  Min-Seok OH ,  Sung-Chan PARK ,  Yun-Seok LEE ,  Nam-Kyu Song ,  Dong-Seop KIM ,  Min-Sung KIM ,  Cho-Young LEE ,  Young-su KIM ,  Young-Sang PARK

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/03529 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell including a crystalline semiconductor substrate having a first conductive type; a first doping layer on a front surface of the substrate and being doped with a first conductive type impurity; a front surface antireflection film on the front surface of the substrate; a back surface antireflection film on a back surface of the substrate; an intrinsic semiconductor layer, an emitter, and a first auxiliary electrode stacked on the back surface antireflection film and the substrate; a second doping layer on the back surface of the substrate and being doped with the first impurity; an insulating film on the substrate and including an opening overlying the second doping layer; a second auxiliary electrode in the opening and overlying the second doping layer; a first electrode on the first auxiliary electrode; and a second electrode on the second auxiliary electrode and being separated from the first electrode.

Abstract translation: 一种太阳能电池，包括具有第一导电类型的晶体半导体衬底; 在衬底的前表面上的第一掺杂层，并掺杂有第一导电类型的杂质; 在所述基板的前表面上的前表面抗反射膜; 在基板的背面上的背面防反射膜; 本征半导体层，发射极和堆叠在背面防反射膜和基板上的第一辅助电极; 在衬底的背表面上的第二掺杂层，并掺杂有第一杂质; 绝缘膜，其包括覆盖所述第二掺杂层的开口; 在所述开口中的第二辅助电极并且覆盖所述第二掺杂层; 第一辅助电极上的第一电极; 以及第二辅助电极上的第二电极，并与第一电极分离。

公开(公告)号：US20130092224A1

公开(公告)日：2013-04-18

申请号：US13424450

申请日：2012-03-20

Applicant: Doo-Youl LEE ,  Young-Jin Kim ,  Dong-Seop Kim ,  Chan-Bin Mo ,  Young-Su Kim ,  Young-Sang Park

Inventor： Doo-Youl LEE ,  Young-Jin Kim ,  Dong-Seop Kim ,  Chan-Bin Mo ,  Young-Su Kim ,  Young-Sang Park

IPC: H01L31/0216

CPC classification number: H01L31/022441 ,  H01L31/0352 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/075 ,  Y02E10/547 ,  Y02E10/548

Abstract: A photoelectric device includes a first semiconductor structure and a second semiconductor structure on a substrate, and the first semiconductor structure includes a different conductivity type from the second semiconductor structure. The photoelectric device also includes a first electrode on the first semiconductor structure and a second electrode on the second semiconductor structure, and an interlayer insulating structure adjacent to the second semiconductor structure. The interlayer insulating structure separates the first semiconductor structure from the second semiconductor structure and separates the first semiconductor structure from the second electrode.

Abstract translation: 光电器件在衬底上包括第一半导体结构和第二半导体结构，并且第一半导体结构包括与第二半导体结构不同的导电类型。 光电器件还包括第一半导体结构上的第一电极和第二半导体结构上的第二电极以及与第二半导体结构相邻的层间绝缘结构。 层间绝缘结构将第一半导体结构与第二半导体结构分开，并将第一半导体结构与第二电极分离。

公开(公告)号：US20120012176A1

公开(公告)日：2012-01-19

申请号：US13107310

申请日：2011-05-13

Applicant: Young-Jin Kim ,  Dong-Seop Kim ,  Doo-Youl Lee ,  Jun-Hyun Park ,  Sang-Ho Kim ,  Ju-Hyun Jeong ,  Young-Soo Kim ,  Chan-Bin Mo ,  Young-Su Kim ,  Myeong-Woo Kim ,  Sang-Joon Lee

Inventor： Young-Jin Kim ,  Dong-Seop Kim ,  Doo-Youl Lee ,  Jun-Hyun Park ,  Sang-Ho Kim ,  Ju-Hyun Jeong ,  Young-Soo Kim ,  Chan-Bin Mo ,  Young-Su Kim ,  Myeong-Woo Kim ,  Sang-Joon Lee

IPC: H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/022441 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

Abstract: A solar cell includes a substrate, a doped pattern, a contact layer, and an electrode. The substrate includes a first surface onto which sunlight is incident and a second surface facing the first surface. The doped pattern is formed on the second surface of the substrate and the contact layer is formed on the doped pattern. The electrode is formed on the contact layer and is electrically connected to the doped pattern. Accordingly, a contact resistance between the substrate and the electrode may be decreased, so that the doped pattern and the electrode may be uniformly formed and a power efficiency of the solar cell may be improved.

Abstract translation: 太阳能电池包括衬底，掺杂图案，接触层和电极。 基板包括阳光入射的第一表面和面向第一表面的第二表面。 掺杂图案形成在衬底的第二表面上，并且在掺杂图案上形成接触层。 电极形成在接触层上并与掺杂图案电连接。 因此，可以减小衬底和电极之间的接触电阻，使得可以均匀地形成掺杂图案和电极，并且可以提高太阳能电池的功率效率。

公开(公告)号：US20080238285A1

公开(公告)日：2008-10-02

申请号：US11902950

申请日：2007-09-26

Applicant: Soon-Hyung Hong ,  Chan-Bin Mo

Inventor： Soon-Hyung Hong ,  Chan-Bin Mo

IPC: H01J1/02 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J2201/30469

Abstract: The present invention relates to a long-life carbon nanotube field emitter with a three-dimensional structure and method for fabricating the same. Since the emitter having an extended area according to the design of the present invention can minimize the current density flowing per single wire of the carbon nanotube, it can be expected that the damage of the carbon nanotube is minimized so that the lifetime of the field emitter can be significantly improved and the commercialization of the carbon nanotube field emitter will be advanced.

Abstract translation: 本发明涉及具有三维结构的长寿命碳纳米管场发射体及其制造方法。 由于根据本发明的设计具有扩展区域的发射极可以使碳纳米管的每一线流动的电流密度最小化，所以可以预期碳纳米管的损伤最小化，使得场致发射体的寿命 可以显着提高碳纳米管场发射体的商业化程度。

公开(公告)号：US08889981B2

公开(公告)日：2014-11-18

申请号：US13424450

申请日：2012-03-20

Applicant: Doo-Youl Lee ,  Young-Jin Kim ,  Dong-Seop Kim ,  Chan-Bin Mo ,  Young-Su Kim ,  Young-Sang Park

Inventor： Doo-Youl Lee ,  Young-Jin Kim ,  Dong-Seop Kim ,  Chan-Bin Mo ,  Young-Su Kim ,  Young-Sang Park

IPC: H01L31/00 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/075 ,  H01L31/0747

CPC classification number: H01L31/022441 ,  H01L31/0352 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/075 ,  Y02E10/547 ,  Y02E10/548

Abstract: A photoelectric device includes a first semiconductor structure and a second semiconductor structure on a substrate, and the first semiconductor structure includes a different conductivity type from the second semiconductor structure. The photoelectric device also includes a first electrode on the first semiconductor structure and a second electrode on the second semiconductor structure, and an interlayer insulating structure adjacent to the second semiconductor structure. The interlayer insulating structure separates the first semiconductor structure from the second semiconductor structure and separates the first semiconductor structure from the second electrode.

Abstract translation: 光电器件在衬底上包括第一半导体结构和第二半导体结构，并且第一半导体结构包括与第二半导体结构不同的导电类型。 光电器件还包括第一半导体结构上的第一电极和第二半导体结构上的第二电极以及与第二半导体结构相邻的层间绝缘结构。 层间绝缘结构将第一半导体结构与第二半导体结构分开，并将第一半导体结构与第二电极分离。

公开(公告)号：US20130087192A1

公开(公告)日：2013-04-11

申请号：US13445851

申请日：2012-04-12

Applicant: Young-Su Kim ,  Doo-Youl Lee ,  Young-Jin Kim ,  Chan-Bin Mo ,  Young-Sang Park

Inventor： Young-Su Kim ,  Doo-Youl Lee ,  Young-Jin Kim ,  Chan-Bin Mo ,  Young-Sang Park

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022441 ,  Y02E10/547

Abstract: A photovoltaic device, and a method of fabricating the same are provided. Here, a base portion and an emitter portion are formed on a surface of a semiconductor substrate. An insulation layer is formed on the base portion and the emitter portion. The insulation layer has a plurality of vias to partially expose the base portion and the emitter portion. A first electrode is formed to contact a region of the emitter portion through at least one of the vias, and a second electrode is formed to contact a region of the base portion through at least another one of the vias. Then, a dicing line is set at a bus electrode portion of the second electrode, and the semiconductor substrate is split into at least two photovoltaic devices at the base portion along the dicing line.

Abstract translation: 提供一种光电器件及其制造方法。 这里，在半导体衬底的表面上形成基极部分和发射极部分。 绝缘层形成在基部和发射极部分上。 绝缘层具有多个通孔以部分地暴露基部和发射极部分。 第一电极形成为通过至少一个通孔接触发射极部分的区域，并且第二电极形成为通过至少另一个通孔接触基部的区域。 然后，将切割线设置在第二电极的总线电极部分，并且半导体衬底沿着切割线在基部分割成至少两个光伏器件。