公开(公告)号：US08194365B1

公开(公告)日：2012-06-05

申请号：US12553897

申请日：2009-09-03

申请人： Qunwen Leng ,  Chando Park ,  Yimin Guo ,  Christian Kaiser ,  Mahendra Pakala ,  Sining Mao

发明人： Qunwen Leng ,  Chando Park ,  Yimin Guo ,  Christian Kaiser ,  Mahendra Pakala ,  Sining Mao

IPC分类号： G11B5/39

CPC分类号： G11B5/3906 ,  G01R33/098 ,  H01L43/08 ,  H01L43/10

摘要： A method and system for providing a magnetic structure in magnetic transducer is described. The magnetic structure includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer includes a first magnetic layer, a second magnetic layer, and a magnetic insertion layer between the first magnetic layer and the second magnetic layer. The first magnetic layer has a first magnetostriction. The second magnetic layer has a second magnetostriction opposite to the first magnetostriction. The magnetic insertion layer provides a growth texture barrier between the first magnetic layer and the second magnetic layer.

摘要翻译： 描述了一种用于在磁换能器中提供磁结构的方法和系统。 磁结构包括钉扎层，非磁性间隔层和自由层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层包括在第一磁性层和第二磁性层之间的第一磁性层，第二磁性层和磁性插入层。 第一磁性层具有第一磁致伸缩。 第二磁性层具有与第一磁致伸缩相反的第二磁致伸缩。 磁性插入层在第一磁性层和第二磁性层之间提供生长结构屏障。

公开(公告)号：US08498084B1

公开(公告)日：2013-07-30

申请号：US12506978

申请日：2009-07-21

申请人： Qunwen Leng ,  Christian Kaiser ,  Yimin Guo ,  Mahendra Pakala ,  Sining Mao

发明人： Qunwen Leng ,  Christian Kaiser ,  Yimin Guo ,  Mahendra Pakala ,  Sining Mao

IPC分类号： G11B5/127

CPC分类号： G01R33/093 ,  G11B5/3909 ,  G11B5/3912

摘要： A magnetoresistive sensor having a novel free layer and a method of producing the same are disclosed. The magnetoresistive sensor comprises a pinned layer, a barrier layer disposed over the pinned layer, and a free layer disposed over the barrier layer. The free layer comprises a first magnetic layer disposed over the barrier layer. The first magnetic layer has a positive spin polarization, a positive magnetostriction, and a polycrystalline structure. The free layer further comprises a second magnetic layer disposed over the first magnetic layer. The second magnetic layer has a negative magnetostriction and comprises at least cobalt (Co) and boron (B).

摘要翻译： 公开了一种具有新型自由层的磁阻传感器及其制造方法。 磁阻传感器包括被钉扎层，设置在钉扎层上的阻挡层和设置在阻挡层上的自由层。 自由层包括设置在阻挡层上的第一磁性层。 第一磁性层具有正自旋极化，正磁致伸缩和多晶结构。 自由层还包括设置在第一磁性层上的第二磁性层。 第二磁性层具有负的磁致伸缩，并且至少包括钴（Co）和硼（B）。

公开(公告)号：US08422176B1

公开(公告)日：2013-04-16

申请号：US13297204

申请日：2011-11-15

申请人： Qunwen Leng ,  Laurence L. Chen ,  Yimin Guo ,  Yuankai Zheng ,  Mahendra Pakala

发明人： Qunwen Leng ,  Laurence L. Chen ,  Yimin Guo ,  Yuankai Zheng ,  Mahendra Pakala

IPC分类号： G11B5/39

CPC分类号： G11B5/3906 ,  G01R33/093 ,  G11B5/3929 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3272

摘要： A method and system for providing a magnetic read transducer is described. The magnetic read transducer includes a bilayer magnetic seed layer, an antiferromagnetic (AFM) layer, and a read sensor. The bilayer magnetic seed layer includes a Ni1-xFex layer and a Ni1-yFey layer on the Ni1-xFex layer, where x is at least 0.3 and not more than 1 and where y is not more than 0.19. The AFM layer resides on the bilayer magnetic seed layer. The read sensor is on the AFM layer.

摘要翻译： 描述了一种用于提供磁读取换能器的方法和系统。 磁读取传感器包括双层磁性种子层，反铁磁（AFM）层和读取传感器。 双层磁性种子层在Ni1-xFex层上包含Ni1-xFex层和Ni1-yFey层，其中x为至少0.3且不大于1，其中y不大于0.19。 AFM层位于双层磁性种子层上。 读取传感器位于AFM层上。

公开(公告)号：US08514506B1

公开(公告)日：2013-08-20

申请号：US13371252

申请日：2012-02-10

申请人： Shaoping Li ,  Yimin Guo ,  Francis H. Liu ,  Sining Mao

发明人： Shaoping Li ,  Yimin Guo ,  Francis H. Liu ,  Sining Mao

IPC分类号： G11B5/09 ,  G11B20/10

CPC分类号： G11B5/3954 ,  G11B5/012 ,  G11B20/10009 ,  G11B20/10037 ,  G11B20/10046 ,  G11B20/10074 ,  G11B20/10175 ,  G11B20/10222 ,  G11B20/10231 ,  G11B20/10277 ,  G11B20/10305 ,  G11B20/10314 ,  G11B20/10379 ,  G11B20/1258 ,  G11B2220/2516

摘要： A disk drive is disclosed comprising a disk having a plurality of data tracks, and a head actuated over the disk, the head comprising a first read element and a second read element. A data track is read to generate a first read signal emanating from the first read element and a second read signal emanating from the second read element. The first read signal is delayed in continuous time relative to the second read signal to generate a delayed read signal, and the second read signal is combined with the delayed read signal to generate a combined read signal. An estimated data sequence is detected from the combined read signal.

摘要翻译： 公开了一种磁盘驱动器，其包括具有多个数据磁道的磁盘，以及在盘上驱动的磁头，磁头包括第一读取元件和第二读取元件。 读取数据磁道以产生从第一读取元件发出的第一读取信号和从第二读取元件发出的第二读取信号。 第一读取信号相对于第二读取信号以连续时间延迟，以产生延迟的读取信号，并且将第二读取信号与延迟的读取信号组合以产生组合的读取信号。 从组合的读取信号中检测估计的数据序列。

公开(公告)号：US08194366B1

公开(公告)日：2012-06-05

申请号：US12579315

申请日：2009-10-14

申请人： Shaoping Li ,  Yimin Guo ,  Feng Liu ,  Wei Zhang ,  Sining Mao

发明人： Shaoping Li ,  Yimin Guo ,  Feng Liu ,  Wei Zhang ,  Sining Mao

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  G01R33/098 ,  G11B5/3909 ,  H01L43/08 ,  H01L43/12

摘要： A tunneling magnetoresistance (TMR) read head and a method of producing the same are disclosed. A free layer having a free layer stripe height is provided, the free layer having a first side and a second side. A tunneling barrier layer is formed adjacent to the first side of the free layer, the tunneling barrier layer having a first side and a second side, the second side of the tunneling barrier layer facing the first side of the free layer. A pinned stack is formed adjacent to the first side of the tunneling barrier layer. The pinned stack comprises at least one magnetic layer having a current path stripe height that is less than the free layer stripe height.

摘要翻译： 公开了一种隧道磁阻（TMR）读头及其制造方法。 提供具有自由层条纹高度的自由层，自由层具有第一侧和第二侧。 隧道势垒层邻近自由层的第一侧形成，隧道势垒层具有第一侧和第二侧，隧道势垒层的第二面面向自由层的第一侧。 在隧道势垒层的第一侧附近形成钉扎层。 钉扎堆叠包括至少一个具有小于自由层条纹高度的电流路径条纹高度的磁性层。

公开(公告)号：US08139301B1

公开(公告)日：2012-03-20

申请号：US12507294

申请日：2009-07-22

申请人： Shaoping Li ,  Yimin Guo ,  Francis H. Liu ,  Sining Mao

发明人： Shaoping Li ,  Yimin Guo ,  Francis H. Liu ,  Sining Mao

IPC分类号： G11B5/09 ,  G11B20/10

CPC分类号： G11B5/3954 ,  G11B5/012 ,  G11B20/10009 ,  G11B20/10037 ,  G11B20/10046 ,  G11B20/10074 ,  G11B20/10175 ,  G11B20/10222 ,  G11B20/10231 ,  G11B20/10277 ,  G11B20/10305 ,  G11B20/10314 ,  G11B20/10379 ,  G11B20/1258 ,  G11B2220/2516

摘要： A disk drive is disclosed comprising a disk having a plurality of data tracks, and a head actuated over the disk, the head comprising a first read element and a second read element. A data track is read to generate a first read signal emanating from the first read element and a second read signal emanating from the second read element. The first read signal is delayed relative to the second read signal to generate a delayed read signal, and the second read signal is combined with the delayed read signal to generate a combined read signal. An estimated data sequence is detected from the combined read signal.

摘要翻译： 公开了一种磁盘驱动器，其包括具有多个数据磁道的磁盘，以及在盘上驱动的磁头，磁头包括第一读取元件和第二读取元件。 读取数据磁道以产生从第一读取元件发出的第一读取信号和从第二读取元件发出的第二读取信号。 第一读取信号相对于第二读取信号被延迟以产生延迟的读取信号，并且第二读取信号与延迟的读取信号组合以产生组合的读取信号。 从组合的读取信号中检测估计的数据序列。

公开(公告)号：US11569440B2

公开(公告)日：2023-01-31

申请号：US15412076

申请日：2017-01-23

申请人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

发明人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

IPC分类号： H01L43/12 ,  H01L27/24 ,  H01L45/00 ,  H01L27/22

摘要： The invention disclosed a method to make an implanted hard mask with ultra-small dimensions for fabricating integrated nonvolatile random access memory. Instead of directly depositing hard mask material on top of the memory film stack element, we first make ultra-small VIA holes on a pattern transfer molding (PTM) layer using a reverse memory mask, then fill in the hard mask material into the VIA holes within the PTM material. Ultra-small hard mask pillars are formed after removing the PTM material. To improve the adhesion of the hard mask pillars with the underneath memory stack element, a hard mask sustaining element (HMSE) is added below PTM. Due to a better materials adhesion between HMSE and the hard mask, a stronger hard mask array can be formed.

公开(公告)号：US20210343934A1

公开(公告)日：2021-11-04

申请号：US16865810

申请日：2020-05-04

申请人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

发明人： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

IPC分类号： H01L43/10 ,  H01L43/08 ,  H01F10/30 ,  H01F10/32 ,  H01F10/12

摘要： The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

公开(公告)号：US20210327960A1

公开(公告)日：2021-10-21

申请号：US16849571

申请日：2020-04-15

申请人： RONGFU XIAO ,  Yimin Guo ,  Jun Chen

发明人： RONGFU XIAO ,  Yimin Guo ,  Jun Chen

IPC分类号： H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16

摘要： An ultra-fast magnetic random access memory (MRAM) comprises a three terminal bottom-pinned composite SOT magnetic tunneling junction (bCSOT-MTJ) element including (counting from top to bottom) a magnetic flux guide (MFG) having a very high magnetic permeability, a spin Hall channel (SHC) having a large positive spin Hall angle, an in-plane magnetic memory (MM) layer, a tunnel barrier (TB) layer, and a magnetic pinning stack (MPS) having a synthetic antiparallel coupling pinned by an antiferromagnetic material. The magnetic writing is significantly boosted by a combined effort of enhanced spin orbit torque (SOT) and Lorentz force generated by current-flowing wire (CFW) in the SHC layer and spin transfer torque (STT) by a current flowing through the MTJ stack, and further enhanced by a magnetic close loop formed at the cross section of MFG/SHC/MM tri-layer. Such bCSOT-MTJ element will have a very fast (down to picoseconds) switching speed and consume much less power suitable level 1 or 2 cache application for SMRAM, CPU, GPU and TPU.

公开(公告)号：US11114611B2

公开(公告)日：2021-09-07

申请号：US14678370

申请日：2015-04-03

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： H01L43/08 ,  H01L43/12 ,  H01L27/22

摘要： A method to make magnetic random access memory with small footprint using O-ion implantation to form electrically isolated memory pillar and electric (bottom and top) leads, which are made from some oxygen gettering materials, Mg, Zr, Y, Th, Ti, Al, Ba. The doped O-ions react with metal atoms to form fully oxidized metal oxide after high temperature anneal. The method only needs two photolithography patterning and oxygen implantations and no etch and dielectric refill are needed, thus significantly reduce process cost. The method can produce extremely small MRAM cell size with perfectly vertical pillar edges (FIG. 1).