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    Magnetoresistive random access memory device and method of making same
    1.
    发明授权
    Magnetoresistive random access memory device and method of making same 有权

    公开(公告)号：US10553785B2

    公开(公告)日：2020-02-04

    申请号：US13452230

    申请日：2012-04-20

    申请人： Chern-Yow Hsu ,  Shih-Chang Liu ,  Chia-Shiung Tsai

    发明人： Chern-Yow Hsu ,  Shih-Chang Liu ,  Chia-Shiung Tsai

    IPC分类号： H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16

    摘要： This description relates to a method for fabricating a magnetoresistive random access memory (MRAM) device having a plurality of magnetic tunnel junction (MTJ) units. The method includes forming a bottom conductive layer, forming an anti-ferromagnetic layer and forming a tunnel layer over the bottom conductive layer and the anti-ferromagnetic layer. The method further includes forming a free magnetic layer, having a magnetic moment aligned in a direction that is adjustable by applying an electromagnetic field, over the tunnel layer and forming a top conductive layer over the free magnetic layer. The method further includes performing at least one lithographic process to remove portions of the bottom conductive layer, the anti-ferromagnetic layer, the tunnel layer, the free magnetic layer and the top conductive layer that is uncovered by the photoresist layer until the bottom conductive layer is exposed and removing portions of at least one sidewall of the MTJ unit.

    Hole first hardmask definition
    2.
    发明授权
    Hole first hardmask definition 有权
    孔第一硬掩模定义

    公开(公告)号：US08569849B2

    公开(公告)日：2013-10-29

    申请号：US13618908

    申请日：2012-09-14

    申请人： Wei-Hang Huang ,  Shih-Chang Liu ,  Chern-Yow Hsu ,  Fu-Ting Sung ,  Chia-Shiung Tsai

    发明人： Wei-Hang Huang ,  Shih-Chang Liu ,  Chern-Yow Hsu ,  Fu-Ting Sung ,  Chia-Shiung Tsai

    IPC分类号： H01L29/82

    CPC分类号： H01L43/12 ,  G11C11/16

    摘要： A semiconductor device and a method of manufacture are provided, such as a MTJ device and a method of manufacturing a MTJ device. The MTJ device may include a bottom electrode, a MTJ stack, and a top electrode, wherein the top electrode is formed using a hole-filling technique. The top electrode may have slanted sidewalls. The MTJ stack may be formed by depositing corresponding MTJ layers. A patterned mask may be formed and patterned over the MTJ layers to form an opening defining the top electrode. The opening is filled with a conductive material to form the top electrode. The top electrode is then used as a mask to pattern the MTJ layers, thereby forming a MTJ stack.

    摘要翻译： 提供半导体器件和制造方法，例如MTJ器件和制造MTJ器件的方法。 MTJ装置可以包括底部电极，MTJ堆叠和顶部电极，其中顶部电极使用填充孔技术形成。 顶部电极可以具有倾斜的侧壁。 可以通过沉积相应的MTJ层来形成MTJ堆叠。 可以在MTJ层上形成并图案化图案化掩模以形成限定顶部电极的开口。 开口填充有导电材料以形成顶部电极。 然后将顶部电极用作掩模以对MTJ层进行图案化，从而形成MTJ堆叠。

    SEMICONDUCTOR ARRANGEMENT HAVING CAPACITOR SEPARATED FROM ACTIVE REGION
    4.
    发明申请
    SEMICONDUCTOR ARRANGEMENT HAVING CAPACITOR SEPARATED FROM ACTIVE REGION 有权
    具有从活性区域分离的电容器的半导体器件布置

    公开(公告)号：US20150115409A1

    公开(公告)日：2015-04-30

    申请号：US14063312

    申请日：2013-10-25

    申请人： Chern-Yow Hsu

    发明人： Chern-Yow Hsu

    IPC分类号： H01L49/02

    CPC分类号： H01L27/10855 ,  H01L21/31111 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10873 ,  H01L27/10894 ,  H01L28/90

    摘要： A semiconductor arrangement includes an active region including a semiconductor device. The semiconductor arrangement includes a capacitor having a first electrode layer, a second electrode layer, and an insulating layer between the first electrode layer and the second electrode layer. At least three dielectric layers are between a bottom surface of the capacitor and the active region.

    摘要翻译： 半导体装置包括包括半导体器件的有源区。 半导体装置包括在第一电极层和第二电极层之间具有第一电极层，第二电极层和绝缘层的电容器。 至少三个电介质层位于电容器的底表面和有源区之间。

    MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MAKING SAME
    6.
    发明申请
    MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MAKING SAME 审中-公开
    磁性随机访问存储器件及其制造方法

    公开(公告)号：US20130277778A1

    公开(公告)日：2013-10-24

    申请号：US13452230

    申请日：2012-04-20

    申请人： Chern-Yow HSU ,  Shih-Chang LIU ,  Chia-Shiung TSAI

    发明人： Chern-Yow HSU ,  Shih-Chang LIU ,  Chia-Shiung TSAI

    IPC分类号： H01L29/82 ,  H01L21/8246

    摘要： This description relates to a method for fabricating a magnetoresistive random access memory (MRAM) device having a plurality of magnetic tunnel junction (MTJ) units. The method includes forming a bottom conductive layer, forming an anti-ferromagnetic layer and forming a tunnel layer over the bottom conductive layer and the anti-ferromagnetic layer. The method further includes forming a free magnetic layer, having a magnetic moment aligned in a direction that is adjustable by applying an electromagnetic field, over the tunnel layer and forming a top conductive layer over the free magnetic layer. The method further includes performing at least one lithographic process to remove portions of the bottom conductive layer, the anti-ferromagnetic layer, the tunnel layer, the free magnetic layer and the top conductive layer that is uncovered by the photoresist layer until the bottom conductive layer is exposed and removing portions of at least one sidewall of the MTJ unit.

    摘要翻译： 该描述涉及一种用于制造具有多个磁性隧道结（MTJ）单元的磁阻随机存取存储器（MRAM）装置的方法。 该方法包括形成底部导电层，形成反铁磁层并在底部导电层和反铁磁层上形成隧道层。 该方法还包括形成自由磁性层，该磁性层在通过施加电磁场的可调整方向上对准磁矩，并在隧道层上形成顶部导电层，并在自由磁性层上形成顶部导电层。 该方法还包括执行至少一个光刻工艺以去除由光致抗蚀剂层未覆盖的底部导电层，反铁磁层，隧道层，自由磁性层和顶部导电层的部分，直到底部导电层 暴露并去除MTJ单元的至少一个侧壁的部分。

    Hole First Hardmask Definition
    7.
    发明申请
    Hole First Hardmask Definition 有权
    孔第一硬掩模定义

    公开(公告)号：US20130043549A1

    公开(公告)日：2013-02-21

    申请号：US13618908

    申请日：2012-09-14

    申请人： Wei-Hang Huang ,  Shih-Chang Liu ,  Chern-Yow Hsu ,  Fu-Ting Sung ,  Chia-Shiung Tsai

    发明人： Wei-Hang Huang ,  Shih-Chang Liu ,  Chern-Yow Hsu ,  Fu-Ting Sung ,  Chia-Shiung Tsai

    IPC分类号： H01L29/82

    CPC分类号： H01L43/12 ,  G11C11/16

    摘要： A semiconductor device and a method of manufacture are provided, such as a MTJ device and a method of manufacturing a MTJ device. The MTJ device may include a bottom electrode, a MTJ stack, and a top electrode, wherein the top electrode is formed using a hole-filling technique. The top electrode may have slanted sidewalls. The MTJ stack may be formed by depositing corresponding MTJ layers. A patterned mask may be formed and patterned over the MTJ layers to form an opening defining the top electrode. The opening is filled with a conductive material to form the top electrode. The top electrode is then used as a mask to pattern the MTJ layers, thereby forming a MTJ stack.

    摘要翻译： 提供半导体器件和制造方法，例如MTJ器件和制造MTJ器件的方法。 MTJ装置可以包括底部电极，MTJ堆叠和顶部电极，其中顶部电极使用填充孔技术形成。 顶部电极可以具有倾斜的侧壁。 可以通过沉积相应的MTJ层来形成MTJ堆叠。 可以在MTJ层上形成并图案化图案化掩模以形成限定顶部电极的开口。 开口填充有导电材料以形成顶部电极。 然后将顶部电极用作掩模以对MTJ层进行图案化，从而形成MTJ堆叠。

    Hole first hardmask definition
    8.
    发明授权
    Hole first hardmask definition 有权
    孔第一硬掩模定义

    公开(公告)号：US08313959B1

    公开(公告)日：2012-11-20

    申请号：US13211909

    申请日：2011-08-17

    申请人： Wei-Hang Huang ,  Shih-Chang Liu ,  Chern-Yow Hsu ,  Fu-Ting Sung ,  Chia-Shiung Tsai

    发明人： Wei-Hang Huang ,  Shih-Chang Liu ,  Chern-Yow Hsu ,  Fu-Ting Sung ,  Chia-Shiung Tsai

    IPC分类号： H01L21/00

    CPC分类号： H01L43/12 ,  G11C11/16

    摘要： A semiconductor device and a method of manufacture are provided, such as a MTJ device and a method of manufacturing a MTJ device. The MTJ device may include a bottom electrode, a MTJ stack, and a top electrode, wherein the top electrode is formed using a hole-filling technique. The top electrode may have slanted sidewalls. The MTJ stack may be formed by depositing corresponding MTJ layers. A patterned mask may be formed and patterned over the MTJ layers to form an opening defining the top electrode. The opening is filled with a conductive material to form the top electrode. The top electrode is then used as a mask to pattern the MTJ layers, thereby forming a MTJ stack.

    摘要翻译： 提供半导体器件和制造方法，例如MTJ器件和制造MTJ器件的方法。 MTJ装置可以包括底部电极，MTJ堆叠和顶部电极，其中顶部电极使用填充孔技术形成。 顶部电极可以具有倾斜的侧壁。 可以通过沉积相应的MTJ层来形成MTJ堆叠。 可以在MTJ层上形成并图案化图案化掩模以形成限定顶部电极的开口。 开口填充有导电材料以形成顶部电极。 然后将顶部电极用作掩模以对MTJ层进行图案化，从而形成MTJ堆叠。