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    Saw sheath
    1.
    外观设计
    Saw sheath 有权
    锯鞘

    公开(公告)号：USD714047S1

    公开(公告)日：2014-09-30

    申请号：US29468507

    申请日：2013-10-01

    申请人： Kuo-Chi Ko

    设计人： Kuo-Chi Ko

    Interconnect structures with surfaces roughness improving liner and methods for fabricating the same
    5.
    发明授权
    Interconnect structures with surfaces roughness improving liner and methods for fabricating the same 有权
    互连结构与表面粗糙度改善衬垫及其制造方法

    公开(公告)号：US07466027B2

    公开(公告)日：2008-12-16

    申请号：US11531304

    申请日：2006-09-13

    申请人： Chung-Chi Ko ,  Keng-Chu Lin ,  Chia-Cheng Chou

    发明人： Chung-Chi Ko ,  Keng-Chu Lin ,  Chia-Cheng Chou

    IPC分类号： H01L23/48 ,  H01L21/4763

    CPC分类号： H01L21/02203 ,  H01L21/3121 ,  H01L21/3185 ,  H01L21/76807 ,  H01L21/76831 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Interconnect structures are provided. An exemplary embodiment of an interconnect structure comprises a substrate with a low-k dielectric layer thereon. A via opening and a trench opening are formed in the low-k dielectric layer, wherein the trench opening is formed over the via opening and the via opening exposes a portion of the substrate. A liner layer is formed on sidewalls of the low-k dielectric layer exposed by the trench and via protions and a bottom surface exposed by the trench via portion, wherein the portion of the liner layer on sidewalls of the low-k dielectric layer exposed by the trench and via protions and the portion of the liner layer formed on a bottom surface exposed by the trench portion comprise different materials. A conformal conductive barrier layer is formed in the trench and via openings, covering the liner layer and the exposed portion of the substrate. A conductive layer is formed on the conductive barrier layer, filling in the trench and via openings.

    摘要翻译： 提供互连结构。 互连结构的示例性实施例包括其上具有低k电介质层的衬底。 通孔开口和沟槽开口形成在低k电介质层中，其中沟槽开口形成在通孔开口上方，通孔开口暴露出衬底的一部分。 衬底层形成在由槽沟露出的低k电介质层的侧壁上，并且通过沟槽和由沟槽通孔部分露出的底表面，其中低k电介质层的侧壁上的衬垫层的部分暴露于 形成在由沟槽部分露出的底表面上的沟槽和通孔保护层以及衬垫层的部分包括不同的材料。 在沟槽和通孔开口中形成共形导电阻挡层，覆盖衬垫层和衬底的暴露部分。 在导电阻挡层上形成导电层，填充沟槽和通孔。

    Methods for forming interconnect structures
    7.
    发明申请
    Methods for forming interconnect structures 有权
    形成互连结构的方法

    公开(公告)号：US20070015355A1

    公开(公告)日：2007-01-18

    申请号：US11179265

    申请日：2005-07-12

    申请人： Keng-Chu Lin ,  Chung-Chi Ko ,  Yi-Chi Liao

    发明人： Keng-Chu Lin ,  Chung-Chi Ko ,  Yi-Chi Liao

    IPC分类号： H01L21/469

    CPC分类号： H01L21/76834 ,  H01L21/76825

    摘要： A method for forming an interconnect structure. A substrate is provided with a low-k dielectric layer thereon. At least one conductive feature is then formed in the low-k dielectric layer. A cap layer is formed overlying the low-k dielectric layer, and the conductive feature and the low-k dielectric layer is then subjected to an energy source to reduce a dielectric constant thereof.

    摘要翻译： 一种形成互连结构的方法。 衬底上设置有低k电介质层。 然后在低k电介质层中形成至少一个导电特征。 形成覆盖低k电介质层的覆盖层，然后使导电特征和低k电介质层经受能量源以降低其介电常数。

    Method for decreasing a dielectric constant of a low-k film
    8.
    发明申请
    Method for decreasing a dielectric constant of a low-k film 审中-公开
    降低低k膜的介电常数的方法

    公开(公告)号：US20060115980A1

    公开(公告)日：2006-06-01

    申请号：US11130044

    申请日：2005-05-16

    申请人： Chung-Chi Ko ,  Lih-Ping Li ,  Lain-Jong Li ,  Syun-Ming Jang

    发明人： Chung-Chi Ko ,  Lih-Ping Li ,  Lain-Jong Li ,  Syun-Ming Jang

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76843

    摘要： A method of forming a low dielectric constant film that can be used in a damascene process is disclosed. An organosilicon precursor such as octamethylcyclotrisiloxane (OMCTS) or any other compound that contains Si, C, and H and optionally O is transported into a PECVD chamber with a carrier gas such as CO or CO2 to provide a soft oxidation environment that leads to a higher carbon content and low k value in the deposited film. The carrier gas may replace helium or argon that have a higher bombardment property that can damage the substrate. Since CO and CO2 can contribute carbon to the deposited film, a lower k value is achieved than when an inert carrier gas is employed. The deposited film can be employed, for example, as a dielectric layer in a damascene stack or as an etch stop layer.

    摘要翻译： 公开了一种形成可用于镶嵌工艺中的低介电常数膜的方法。 将诸如八甲基环三硅氧烷（OMCTS）的有机硅前体或含有Si，C和H以及任选的O的任何其它化合物转移到具有载体气体如CO或CO 2的PECVD室中，以提供 软氧化环境导致沉积膜中碳含量较高，k值低。 载气可以代替具有较高轰击性能的氦或氩，这可能损坏基底。 由于CO和CO 2可以对沉积膜贡献碳，所以实现比使用惰性载气时更低的k值。 沉积膜可以用作例如镶嵌层中的介电层或蚀刻停止层。

    Foldable stick assembly
    10.
    发明授权
    Foldable stick assembly 失效
    可折叠棒组件

    公开(公告)号：US06920888B2

    公开(公告)日：2005-07-26

    申请号：US10291924

    申请日：2002-11-08

    申请人： Kuo-Chi Ko

    发明人： Kuo-Chi Ko

    IPC分类号： A01B1/16 ,  A45B9/00

    CPC分类号： A01B1/16

    摘要： A foldable stick assembly includes a foldable tube unit, a sliding handle, a push rod unit, a ratchet socket, an upper ratchet, a pawl member, a lower ratchet, and a push block. The foldable tube unit includes a handle, an upper mounting tube, a lower mounting tube, an upper pivot sleeve, and a lower pivot sleeve. The push rod unit includes a main push rod and an upper push rod. Thus, the foldable stick assembly may be used to cut and remove the weeds and to loosen the soil. In addition, the foldable stick assembly is folded easily and conveniently, so that the volume of the foldable stick assembly is reduced, thereby facilitating storage and transportation of the foldable stick assembly, and thereby decreasing the cost of assembly.

    摘要翻译： 可折叠棒组件包括可折叠管单元，滑动手柄，推杆单元，棘轮座，上棘轮，棘爪构件，下棘轮和推块。 可折叠管单元包括手柄，上安装管，下安装管，上枢轴套和下枢轴套。 推杆单元包括主推杆和上推杆。 因此，可折叠棒组件可用于切除和除去杂草并松开土壤。 此外，可折叠的棒组件易于且方便地折叠，从而可折叠的棒组件的体积减小，从而便于可折叠的棒组件的储存和运输，从而降低组装成本。