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    Method for decreasing a dielectric constant of a low-k film
    1.
    发明申请
    Method for decreasing a dielectric constant of a low-k film 审中-公开
    降低低k膜的介电常数的方法

    公开(公告)号：US20060115980A1

    公开(公告)日：2006-06-01

    申请号：US11130044

    申请日：2005-05-16

    申请人： Chung-Chi Ko ,  Lih-Ping Li ,  Lain-Jong Li ,  Syun-Ming Jang

    发明人： Chung-Chi Ko ,  Lih-Ping Li ,  Lain-Jong Li ,  Syun-Ming Jang

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76843

    摘要： A method of forming a low dielectric constant film that can be used in a damascene process is disclosed. An organosilicon precursor such as octamethylcyclotrisiloxane (OMCTS) or any other compound that contains Si, C, and H and optionally O is transported into a PECVD chamber with a carrier gas such as CO or CO2 to provide a soft oxidation environment that leads to a higher carbon content and low k value in the deposited film. The carrier gas may replace helium or argon that have a higher bombardment property that can damage the substrate. Since CO and CO2 can contribute carbon to the deposited film, a lower k value is achieved than when an inert carrier gas is employed. The deposited film can be employed, for example, as a dielectric layer in a damascene stack or as an etch stop layer.

    摘要翻译： 公开了一种形成可用于镶嵌工艺中的低介电常数膜的方法。 将诸如八甲基环三硅氧烷（OMCTS）的有机硅前体或含有Si，C和H以及任选的O的任何其它化合物转移到具有载体气体如CO或CO 2的PECVD室中，以提供 软氧化环境导致沉积膜中碳含量较高，k值低。 载气可以代替具有较高轰击性能的氦或氩，这可能损坏基底。 由于CO和CO 2可以对沉积膜贡献碳，所以实现比使用惰性载气时更低的k值。 沉积膜可以用作例如镶嵌层中的介电层或蚀刻停止层。

    Thin interface layer to improve copper etch stop
    3.
    发明授权
    Thin interface layer to improve copper etch stop 有权
    薄界面层改善铜蚀刻停止

    公开(公告)号：US06884659B2

    公开(公告)日：2005-04-26

    申请号：US10641648

    申请日：2003-08-15

    申请人： Bi-Trong Chen ,  Lain-Jong Li ,  Syun-Ming Jang ,  Shu E Ku ,  Tien I. Bao ,  Lih-Ping Li

    发明人： Bi-Trong Chen ,  Lain-Jong Li ,  Syun-Ming Jang ,  Shu E Ku ,  Tien I. Bao ,  Lih-Ping Li

    IPC分类号： C23C16/02 ,  H01L21/768 ,  H01L21/48 ,  B44C1/22

    CPC分类号： C23C16/0272 ,  C23C16/0236 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838

    摘要： In accordance with the objectives of the invention a new method is provided for improving adhesion strength that is deposited over the surface of a layer of copper. Conventional etch stop layers of for instance dichlorosilane (SiCl2H2) or SiOC have poor adhesion with an underlying layer of copper due to poor molecular binding between the interfacing layers. The surface of the deposited layer of copper can be provided with a special enhanced interface layer by using a method provided by the invention. That is pre-heat of the copper layer followed by a pre-cleaning treatment with ammonia (NH3) and N2, followed by forming an adhesive enhanced layer over the copper layer by treatment with N2 or O2 or N2 with alkyl-silane or alkyl silane.

    摘要翻译： 根据本发明的目的，提供了一种新的方法来提高沉积在铜层表面上的粘合强度。 由于接口层之间的分子结合不良，常规的例如二氯硅烷（SiCl 2 H 2 H 2）或SiOC的蚀刻停止层与铜的下层具有差的粘合性。 通过使用本发明提供的方法，铜的沉积层的表面可以提供特殊的增强界面层。 这是铜层的预热，随后用氨（NH 3 3 N）和N 2 N 2进行预清洁处理，然后在铜上形成粘合增强层 通过用烷基硅烷或烷基硅烷处理N 2或O 2或N 2 N 2层。

    SiOCH low k surface protection layer formation by CxHy gas plasma treatment
    4.
    发明授权
    SiOCH low k surface protection layer formation by CxHy gas plasma treatment 有权
    SiOCH低k表面保护层通过CxHy气体等离子体处理形成

    公开(公告)号：US06962869B1

    公开(公告)日：2005-11-08

    申请号：US10270974

    申请日：2002-10-15

    申请人： Tien-I Bao ,  Hsin-Hsien Lu ,  Lih-Ping Li ,  Chung-Chi Ko ,  Aaron Song ,  Syun-Ming Jang

    发明人： Tien-I Bao ,  Hsin-Hsien Lu ,  Lih-Ping Li ,  Chung-Chi Ko ,  Aaron Song ,  Syun-Ming Jang

    IPC分类号： H01L21/4763 ,  H01L21/768

    CPC分类号： H01L21/3105 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835

    摘要： A method of protecting a low k dielectric layer that is preferably comprised of a material containing Si, O, C, and H is described. The dielectric layer is subjected to a gas plasma that is generated from a CXHY gas which is preferably ethylene. Optionally, hydrogen may be added to the CXHY gas. Another alternative is a two step plasma process involving a first plasma treatment of CXHY or CXHY combined with H2 and a second plasma treatment with H2. The modified dielectric layer provides improved adhesion to anti-reflective layers and to a barrier metal layer in a damascene process. The modified dielectric layer also has a low CMP rate that prevents scratch defects and an oxide recess from occurring next to the metal layer on the surface of the damascene stack. The plasma treatments are preferably done in the same chamber in which the dielectric layer is deposited.

    摘要翻译： 描述了保护低k电介质层的方法，其优选由含有Si，O，C和H的材料组成。 对电介质层进行气化等离子体，该等离子体是由优选乙烯的C X H Y气产生的。 任选地，可以将氢气加入到C 1 H 2 H 2 O气体中。 另一种替代方案是涉及第一等离子体处理C X> Y Y or SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB >与H 2 H 2结合，并且与H 2 2进行第二等离子体处理。 改进的介电层在镶嵌工艺中提供对抗反射层和阻挡金属层的改善的粘合性。 改进的介电层也具有低CMP速率，其防止划痕缺陷和氧化物凹陷在镶嵌层的表面上邻近金属层发生。 等离子体处理优选在沉积介电层的相同的室中进行。

    Method for forming a carbon doped oxide low-k insulating layer
    5.
    发明授权
    Method for forming a carbon doped oxide low-k insulating layer 有权
    形成碳掺杂氧化物低k绝缘层的方法

    公开(公告)号：US06812043B2

    公开(公告)日：2004-11-02

    申请号：US10131713

    申请日：2002-04-25

    申请人： Tien-I Bao ,  Chung-Chi Ko ,  Lih-Ping Li ,  Syun-Ming Jang

    发明人： Tien-I Bao ,  Chung-Chi Ko ,  Lih-Ping Li ,  Syun-Ming Jang

    IPC分类号： H01L2100

    CPC分类号： H01L21/76826 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76807

    摘要： A method for forming a dielectric insulating layer with a reduced dielectric constant and increased hardness for semiconductor device manufacturing including providing a semiconductor wafer having a process surface for forming a dielectric insulting layer thereover; depositing according to a CVD process a carbon doped oxide layer the CVD process including an oregano-silane precursor having Si—O groups and Si—Ry groups, where R is an alkyl or cyclo-alkyl group and y the number of R groups bonded to Si; and, exposing the carbon doped oxide layer to a hydrogen plasma treatment for a period of time thereby reducing the carbon doped oxide layer thickness including reducing the carbon doped oxide layer dielectric constant and increasing the carbon doped oxide layer hardness.

    摘要翻译： 一种用于半导体器件制造的具有降低的介电常数和增加的硬度的介电绝缘层的形成方法，包括提供具有在其上形成电介质绝缘层的工艺表面的半导体晶片; 根据CVD工艺沉积碳掺杂氧化物层的CVD工艺，其包括具有Si-O基团和Si-Ry基团的牛至硅烷前体，其中R是烷基或环烷基，y是与 硅; 并且将碳掺杂的氧化物层暴露于氢等离子体处理一段时间，从而减少碳掺杂的氧化物层厚度，包括减少碳掺杂的氧化物层介电常数并增加碳掺杂的氧化物层的硬度。