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    ELIMINATION OF PHOTORESIST MATERIAL COLLAPSE AND POISONING IN 45-NM FEATURE SIZE USING DRY OR IMMERSION LITHOGRAPHY
    4.
    发明申请
    ELIMINATION OF PHOTORESIST MATERIAL COLLAPSE AND POISONING IN 45-NM FEATURE SIZE USING DRY OR IMMERSION LITHOGRAPHY 审中-公开
    使用干涉或倾斜光刻技术消除45-NM特征尺寸的光电材料收缩和沉淀

    公开(公告)号：US20090197086A1

    公开(公告)日：2009-08-06

    申请号：US12025615

    申请日：2008-02-04

    申请人： Sudha Rathi ,  Eui Kyoon Kim ,  Bok Hoen Kim ,  Martin Jay Seamons ,  Francimar Campana Schmitt

    发明人： Sudha Rathi ,  Eui Kyoon Kim ,  Bok Hoen Kim ,  Martin Jay Seamons ,  Francimar Campana Schmitt

    IPC分类号： G03F7/00 ,  B05D1/36 ,  H05H1/24 ,  B32B9/00

    CPC分类号： G03F7/091 ,  G03F7/11 ,  Y10T428/30

    摘要： A method and structure for the fabrication of semiconductor devices having feature sizes in the range of 90 nm and smaller is provided. In one embodiment of the invention, a method is provided for processing a substrate including depositing an anti-reflective coating layer on a surface of the substrate, depositing an adhesion promotion layer on the anti-reflective coating layer, and depositing a resist material on the adhesion promotion layer. In another embodiment of the invention, a semiconductor substrate structure is provided including a dielectric substrate, an amorphous carbon layer deposited on the dielectric layer, an anti-reflective coating layer deposited on the amorphous carbon layer, an adhesion promotion layer deposited on the anti-reflective coating layer, and a resist material deposited on the adhesion promotion layer.

    摘要翻译： 提供了具有尺寸在90nm以下的特征尺寸的半导体器件的制造方法和结构。 在本发明的一个实施例中，提供了一种处理衬底的方法，包括在衬底的表面上沉积抗反射涂层，在抗反射涂层上沉积粘合促进层，以及在抗反射涂层上沉积抗蚀剂材料 粘附促进层。 在本发明的另一个实施例中，提供了一种半导体衬底结构，其包括电介质衬底，沉积在电介质层上的无定形碳层，沉积在无定形碳层上的抗反射涂层， 反射涂层和沉积在粘附促进层上的抗蚀剂材料。

    Method of depositing an amorphous carbon film for etch hardmask application
    8.
    发明申请
    Method of depositing an amorphous carbon film for etch hardmask application 有权
    沉积用于蚀刻硬掩模应用的无定形碳膜的方法

    公开(公告)号：US20050202683A1

    公开(公告)日：2005-09-15

    申请号：US10799146

    申请日：2004-03-12

    申请人： Yuxiang Wang ,  Sudha Rathi ,  Michael Kwan ,  Hichem M'Saad

    发明人： Yuxiang Wang ,  Sudha Rathi ,  Michael Kwan ,  Hichem M'Saad

    IPC分类号： H01L21/469

    CPC分类号： G03F7/094 ,  G03F7/091 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/7684

    摘要： Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including forming a dielectric material layer on a surface of the substrate, depositing an amorphous carbon layer on the dielectric material layer by introducing a processing gas comprises one or more hydrocarbon compounds and an argon carrier gas, and generating a plasma of the processing gas by applying power from a dual-frequency RF source, etching the amorphous carbon layer to form a patterned amorphous carbon layer, and etching feature definitions in the dielectric material layer corresponding to the patterned amorphous carbon layer. The amorphous carbon layer may act as an etch stop, an anti-reflective coating, or both.

    摘要翻译： 提供了沉积无定形碳材料的方法。 一方面，本发明提供了一种处理衬底的方法，包括在衬底的表面上形成介电材料层，通过引入包含一种或多种烃化合物和氩气的处理气体在电介质材料层上沉积无定形碳层 并且通过从双频RF源施加电力来产生处理气体的等离子体，蚀刻无定形碳层以形成图案化的非晶碳层，并且在对应于图案化无定形碳的电介质材料层中蚀刻特征定义 层。 无定形碳层可用作蚀刻停止层，抗反射涂层或两者。

    Semiconductor device having reduced oxidation interface
    10.
    发明授权
    Semiconductor device having reduced oxidation interface 有权
    半导体器件具有减少的氧化界面

    公开(公告)号：US06700202B2

    公开(公告)日：2004-03-02

    申请号：US10013182

    申请日：2001-12-07

    申请人： Judy H. Huang ,  Christopher Dennis Bencher ,  Sudha Rathi ,  Christopher S. Ngai ,  Bok Hoen Kim

    发明人： Judy H. Huang ,  Christopher Dennis Bencher ,  Sudha Rathi ,  Christopher S. Ngai ,  Bok Hoen Kim

    IPC分类号： H01L2348

    CPC分类号： H01L21/76834 ,  B08B7/0035 ,  C23C16/0245 ,  C23G5/00 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/02074 ,  H01L21/31116 ,  H01L21/3148 ,  H01L21/3185 ,  H01L21/32136 ,  H01L21/76807 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A method and apparatus for reducing oxidation of an interface of a semiconductor device thereby improving adhesion of subsequently formed layers and/or devices is disclosed. The semiconductor device has at least a first layer and a second layer wherein the interface is disposed between said first and second layers. The method includes the steps of providing the first layer having a partially oxidized interface; introducing a hydrogen-containing plasma to the interface; reducing the oxidized interface and introducing second-layer-forming compounds to the hydrogen-containing plasma. A concomitant apparatus (i.e., a semiconductor device interface) has a first insulating layer, one or more conductive devices disposed within the insulating layer, the insulating layer and conductive devices defining the interface, wherein the interface is treated with a continuous plasma treatment to remove oxidation and deposit a second layer thereupon. The insulating layer of the interface is selected from oxides and nitrides and is preferably a nitride.

    摘要翻译： 公开了一种用于减少半导体器件的界面的氧化从而改善随后形成的层和/或器件的粘合性的方法和装置。 半导体器件具有至少第一层和第二层，其中界面设置在所述第一层和第二层之间。 该方法包括提供具有部分氧化界面的第一层的步骤; 向界面引入含氢等离子体; 还原氧化界面并将第二层形成化合物引入到含氢等离子体中。 伴随的装置（即，半导体器件接口）具有第一绝缘层，设置在绝缘层内的一个或多个导电器件，绝缘层和限定界面的导电器件，其中界面用连续等离子体处理来去除 氧化并沉积第二层。 界面的绝缘层选自氧化物和氮化物，优选为氮化物。