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    Graded ARC for high na and immersion lithography
    4.
    发明申请
    Graded ARC for high na and immersion lithography 有权
    分级ARC用于高na和浸没式光刻

    公开(公告)号：US20080020319A1

    公开(公告)日：2008-01-24

    申请号：US11488528

    申请日：2006-07-18

    Applicant: Wendy H. Yeh ,  Martin J. Seamons ,  Matthew Spuller ,  Sum-Yee Betty Tang ,  Kwangduk Douglas Lee ,  Sudha Rathi

    Inventor： Wendy H. Yeh ,  Martin J. Seamons ,  Matthew Spuller ,  Sum-Yee Betty Tang ,  Kwangduk Douglas Lee ,  Sudha Rathi

    IPC: G03C1/00

    CPC classification number: G03F7/091 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of forming a device using a graded anti-reflective coating is provided. One or more amorphous carbon layers are formed on a substrate. An anti-reflective coating (ARC) is formed on the one or more amorphous carbon layers wherein the ARC layer has an absorption coefficient that varies across the thickness of the ARC layer. An energy sensitive resist material is formed on the ARC layer. An image of a pattern is introduced into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation. The image of the pattern introduced into the layer of energy sensitive resist material is developed.

    Abstract translation: 提供了使用渐变抗反射涂层形成装置的方法。 在基板上形成一个或多个非晶碳层。 在一个或多个非晶碳层上形成抗反射涂层（ARC），其中ARC层具有在ARC层的厚度上变化的吸收系数。 在ARC层上形成能量敏感的抗蚀剂材料。 通过将能量敏感的抗蚀剂材料暴露于图案化的辐射，将图案的图像引入到能量敏感抗蚀剂材料层中。 开发了引入能量敏感抗蚀剂材料层的图案的图像。

    Methods of dry stripping boron-carbon films
    5.
    发明授权
    Methods of dry stripping boron-carbon films 有权
    干法汽提硼碳膜的方法

    公开(公告)号：US09299581B2

    公开(公告)日：2016-03-29

    申请号：US13456404

    申请日：2012-04-26

    Applicant: Kwangduk Douglas Lee ,  Sudha Rathi ,  Ramprakash Sankarakrishnan ,  Martin Jay Seamons ,  Irfan Jamil ,  Bok Hoen Kim

    Inventor： Kwangduk Douglas Lee ,  Sudha Rathi ,  Ramprakash Sankarakrishnan ,  Martin Jay Seamons ,  Irfan Jamil ,  Bok Hoen Kim

    IPC: B08B5/00 ,  H01L21/311 ,  H01L21/02

    CPC classification number: H01L21/31122 ,  H01L21/0206 ,  H01L21/31144

    Abstract: Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.

    Abstract translation: 本发明的实施方案一般涉及干燥汽提硼 - 碳膜的方法。 在一个实施方案中，使用氢和氧的交替等离子体去除硼 - 碳膜。 在另一个实施方案中，使用共流氧和氢等离子体去除含硼碳膜。 除了作为上述氧等离子体中的任一种之外，还可以使用一氧化二氮等离子体。 在另一个实施方案中，使用由水蒸气产生的等离子体来除去硼 - 碳膜。 在除去硼 - 碳膜之前，硼 - 碳去除方法还可以包括任选的聚合物去除方法。 聚合物去除方法包括将硼 - 碳膜暴露于NF3以从硼 - 碳膜的表面除去在基板蚀刻工艺期间产生的任何碳基聚合物。

    ULTRA HIGH SELECTIVITY DOPED AMORPHOUS CARBON STRIPPABLE HARDMASK DEVELOPMENT AND INTEGRATION
    6.
    发明申请
    ULTRA HIGH SELECTIVITY DOPED AMORPHOUS CARBON STRIPPABLE HARDMASK DEVELOPMENT AND INTEGRATION 有权
    超高选择性非晶态碳纳米管开发和集成

    公开(公告)号：US20120080779A1

    公开(公告)日：2012-04-05

    申请号：US13249794

    申请日：2011-09-30

    Applicant: Martin Jay SEAMONS ,  Sudha RATHI ,  Kwangduk Douglas LEE ,  Deenesh PADHI ,  Bok Hoen KIM ,  Chiu CHAN

    Inventor： Martin Jay SEAMONS ,  Sudha RATHI ,  Kwangduk Douglas LEE ,  Deenesh PADHI ,  Bok Hoen KIM ,  Chiu CHAN

    IPC: H01L29/02 ,  C09D1/00 ,  H01L21/31

    CPC classification number: H01L21/64 ,  C23C16/0272 ,  C23C16/26 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/31144

    Abstract: Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method comprises providing a substrate in a processing volume, flowing a hydrocarbon containing gas mixture into the processing volume, generating a plasma of the hydrocarbon containing gas mixture by applying power from an RF source, flowing a boron containing gas mixture into the processing volume, and depositing a boron containing amorphous carbon film on the substrate in the presence of the plasma, wherein the boron containing amorphous carbon film contains from about 30 to about 60 atomic percentage of boron.

    Abstract translation: 本发明的实施例一般涉及集成电路的制造，特别涉及在半导体衬底上沉积含硼无定形碳层。 在一个实施例中，提供了一种在处理室中处理衬底的方法。 该方法包括在处理体积中提供衬底，使含烃气体混合物流入处理体积，通过从含有硼的气体混合物流入处理体积的RF源施加功率产生含烃气体混合物的等离子体， 以及在所述等离子体存在下在所述衬底上沉积含硼无定形碳膜，其中所述含硼无定形碳膜含有约30至约60原子百分比的硼。

    PLANARIZING ETCH HARDMASK TO INCREASE PATTERN DENSITY AND ASPECT RATIO
    7.
    发明申请
    PLANARIZING ETCH HARDMASK TO INCREASE PATTERN DENSITY AND ASPECT RATIO 失效

    公开(公告)号：US20110291243A1

    公开(公告)日：2011-12-01

    申请号：US12790203

    申请日：2010-05-28

    Applicant: Martin Jay Seamons ,  Kwangduk Douglas Lee ,  Chiu Chan ,  Patrick Reilly ,  Sudha Rathi

    Inventor： Martin Jay Seamons ,  Kwangduk Douglas Lee ,  Chiu Chan ,  Patrick Reilly ,  Sudha Rathi

    IPC: H01L21/302 ,  H01L23/52 ,  G03F7/20 ,  H01L21/30

    CPC classification number: H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0337

    Abstract: Methods for manufacturing a semiconductor device in a processing chamber are provided. In one embodiment, a method includes depositing over a substrate a first base material having a first set of interconnect features, filling an upper portion of the first set of interconnect features with an ashable material to an extent capable of protecting the first set of interconnect features from subsequent processes while being easily removable when desired, planarizing an upper surface of the first base material such that an upper surface of the ashable material filled in the first set of interconnect features is at the same level with the upper surface of the first base material, providing a substantial planar outer surface of the first base material, depositing a first film stack comprising a second base material on the substantial planar outer surface of the first base material, forming a second set of interconnect features in the second base material, wherein the second set of interconnect features are aligned with the first set of interconnect features, and removing the ashable material from the first base material, thereby extending a feature depth of the semiconductor device by connecting the second set of interconnect features to the first set of interconnect features. In another embodiment, a method includes providing a base material having a first film stack deposited thereon, wherein the base material is formed over the substrate and having a first set of interconnect features filled with an amorphous carbon material, the first film stack comprising a first amorphous carbon layer deposited on a surface of the base material, a first anti-reflective coating layer deposited on the first amorphous carbon layer, and a first photoresist layer deposited on the first anti-reflective coating layer, and patterning a portion of the first photoresist layer by shifting laterally a projection of a mask on the first photoresist layer relative to the substrate a desired distance, thereby introducing into the first photoresist layer a first feature pattern to be transferred to the underlying base material, wherein the first feature pattern is not aligned with the first set of interconnect features.

    ULTRA HIGH SELECTIVITY ASHABLE HARD MASK FILM
    8.
    发明申请
    ULTRA HIGH SELECTIVITY ASHABLE HARD MASK FILM 有权
    超高选择性的硬掩膜

    公开(公告)号：US20110287633A1

    公开(公告)日：2011-11-24

    申请号：US12784341

    申请日：2010-05-20

    Applicant: Kwangduk Douglas Lee ,  Martin Jay Seamons ,  Sudha Rathi ,  Chiu Chan ,  Michael H. Lin

    Inventor： Kwangduk Douglas Lee ,  Martin Jay Seamons ,  Sudha Rathi ,  Chiu Chan ,  Michael H. Lin

    IPC: H01L21/3105 ,  H01L21/312

    CPC classification number: H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/31144

    Abstract: A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, includes introducing a hydrocarbon source into the processing chamber, introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10:1 to about 20:1, generating a plasma in the processing chamber at a substantially lower pressure of about 2 Torr to 10 Torr, and forming a conformal amorphous carbon layer on the substrate.

    Abstract translation: 在基板处理室中的基板上形成无定形碳层的方法包括将烃源引入到处理室中，将氩单独或与氦，氢，氮及其组合单独或组合地引入到处理室中， 其中氩气具有约10:1至约20:1的烃源体积流量比的体积流速，在处理室中以约2托至10托的基本较低的压力产生等离子体，并形成保形 无定形碳层。

    GRADED ARC FOR HIGH NA AND IMMERSION LITHOGRAPHY
    9.
    发明申请
    GRADED ARC FOR HIGH NA AND IMMERSION LITHOGRAPHY 有权
    用于高精度和倾斜平面的分级弧

    公开(公告)号：US20100239979A1

    公开(公告)日：2010-09-23

    申请号：US12797406

    申请日：2010-06-09

    Applicant: Wendy H. Yeh ,  Martin J. Seamons ,  Matthew Spuller ,  Sum-Yee Betty Tang ,  Kwangduk Douglas Lee ,  Sudha Rathi

    Inventor： Wendy H. Yeh ,  Martin J. Seamons ,  Matthew Spuller ,  Sum-Yee Betty Tang ,  Kwangduk Douglas Lee ,  Sudha Rathi

    IPC: G03F7/004 ,  G03F7/20

    CPC classification number: G03F7/091 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of forming a device using a graded anti-reflective coating is provided. One or more amorphous carbon layers are formed on a substrate. An anti-reflective coating (ARC) is formed on the one or more amorphous carbon layers wherein the ARC layer has an absorption coefficient that varies across the thickness of the ARC layer. An energy sensitive resist material is formed on the ARC layer. An image of a pattern is introduced into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation. The image of the pattern introduced into the layer of energy sensitive resist material is developed.

    Abstract translation: 提供了使用渐变抗反射涂层形成装置的方法。 在基板上形成一个或多个非晶碳层。 在一个或多个非晶碳层上形成抗反射涂层（ARC），其中ARC层具有在ARC层的厚度上变化的吸收系数。 在ARC层上形成能量敏感的抗蚀剂材料。 通过将能量敏感的抗蚀剂材料暴露于图案化的辐射，将图案的图像引入到能量敏感抗蚀剂材料层中。 开发了引入能量敏感抗蚀剂材料层的图案的图像。

    METHODS OF DRY STRIPPING BORON-CARBON FILMS
    10.
    发明申请
    METHODS OF DRY STRIPPING BORON-CARBON FILMS 审中-公开
    干法剥离硼砂膜的方法

    公开(公告)号：US20140216498A1

    公开(公告)日：2014-08-07

    申请号：US13760845

    申请日：2013-02-06

    Applicant: Kwangduk Douglas LEE ,  Sudha RATHI ,  Ramprakash SANKARAKRISHNAN ,  Martin Jay SEAMONS ,  Irfan JAMIL ,  Bok Hoen KIM

    Inventor： Kwangduk Douglas LEE ,  Sudha RATHI ,  Ramprakash SANKARAKRISHNAN ,  Martin Jay SEAMONS ,  Irfan JAMIL ,  Bok Hoen KIM

    IPC: B08B7/00

    CPC classification number: H01J37/32853 ,  B08B7/0035 ,  G03F7/427 ,  H01L21/02041 ,  H01L21/31116

    Abstract: Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.

    Abstract translation: 本发明的实施方案一般涉及干燥汽提硼 - 碳膜的方法。 在一个实施方案中，使用氢和氧的交替等离子体去除硼 - 碳膜。 在另一个实施方案中，使用共流氧和氢等离子体去除含硼碳膜。 除了作为上述氧等离子体中的任一种之外，还可以使用一氧化二氮等离子体。 在另一个实施方案中，使用由水蒸气产生的等离子体来除去硼 - 碳膜。 在除去硼 - 碳膜之前，硼 - 碳去除方法还可以包括任选的聚合物去除方法。 聚合物去除方法包括将硼 - 碳膜暴露于NF3以从硼 - 碳膜的表面除去在基板蚀刻工艺期间产生的任何碳基聚合物。

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