公开(公告)号：US08536579B2

公开(公告)日：2013-09-17

申请号：US12669704

申请日：2008-07-16

申请人： Christoph Wilhelm Sele ,  Monica Johanna Beenhakkers ,  Gerwin Hermanus Gelinck ,  Nicolaas Aldegonda Jan Maria Van Aerle ,  Hjalmar Edzer Ayco Huitema

发明人： Christoph Wilhelm Sele ,  Monica Johanna Beenhakkers ,  Gerwin Hermanus Gelinck ,  Nicolaas Aldegonda Jan Maria Van Aerle ,  Hjalmar Edzer Ayco Huitema

IPC分类号： H01L29/10 ,  H01L29/76 ,  H01L31/036 ,  H01L31/112 ,  H01L29/04 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/15 ,  H01L31/062 ,  H01L31/113 ,  H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC分类号： H01L27/1251 ,  H01L27/124 ,  H01L27/1292 ,  H01L27/283 ,  H01L27/286 ,  H01L29/7869

摘要： The invention relates to an electronic device including a sequence of a first thin film transistor (TFT) and a second TFT, the first TFT including a first set of electrodes separated by a first insulator, the second TFT comprising a second set of electrodes separated by a second insulator, wherein the first set of electrodes and the second set of electrodes are formed from a first shared conductive layer and a second shared conductive layer, the first insulator and the second insulator being formed by a shared dielectric layer. The invention further relates to a method of manufacturing an electronic device.

摘要翻译： 本发明涉及一种包括第一薄膜晶体管（TFT）和第二TFT的序列的电子器件，所述第一TFT包括由第一绝缘体隔开的第一组电极，所述第二TFT包括由第二组电极分开的第二组电极 第二绝缘体，其中所述第一组电极和所述第二组电极由第一共用导电层和第二共用导电层形成，所述第一绝缘体和所述第二绝缘体由共用介电层形成。 本发明还涉及一种制造电子设备的方法。

公开(公告)号：US20100320448A1

公开(公告)日：2010-12-23

申请号：US12669676

申请日：2008-07-16

申请人： Christoph Wilhelm Sele ,  Monica Johanna Beenhakkers ,  Gerwin Hermanus Gelinck ,  Nicolaas Aldegonda Jan Maria van Aerle ,  Hjalmar Edzer Ayco Huitema

发明人： Christoph Wilhelm Sele ,  Monica Johanna Beenhakkers ,  Gerwin Hermanus Gelinck ,  Nicolaas Aldegonda Jan Maria van Aerle ,  Hjalmar Edzer Ayco Huitema

IPC分类号： H01L51/05 ,  H01L21/02

CPC分类号： H01L21/283 ,  H01L21/31133 ,  H01L27/3244 ,  H01L27/3276 ,  H01L51/0021 ,  H01L51/0533

摘要： An electronic component, notably one including, for example, a TFT, a storage capacitor, or a crossing between electrically conductive layers of a stack device is disclosed. The electronic component comprises a substrate whereon a first electrically conductive layer forming electrode is provided. A second electrode formed by a second electrically conductive layer is separated from the first electrode by at least a dielectric layer, comprising an interlayer of an electrically insulating material, preferably having high resistance against view (a) electrical breakdown and a further layer of a photo-patternable electrically insulating material.

摘要翻译： 公开了一种电子部件，特别是包括例如TFT，存储电容器或堆叠装置的导电层之间的交叉的电子部件。 电子部件包括设置有第一导电层形成电极的基板。 由第二导电层形成的第二电极通过至少一个电介质层与第一电极分开，该电介质层包括电绝缘材料的中间层，优选地具有高电阻（a）电击穿和另一层照片 电绝缘材料。

公开(公告)号：US20100237352A1

公开(公告)日：2010-09-23

申请号：US12669704

申请日：2008-07-16

申请人： Christoph Wilhelm Sele ,  Monica Johanna Beenhakkers ,  Gerwin Hermanus Gelinck ,  Nicolaas Aldegonda Jan Maria Van Aerle ,  Hjalmar Edzer Ayco Huitema

发明人： Christoph Wilhelm Sele ,  Monica Johanna Beenhakkers ,  Gerwin Hermanus Gelinck ,  Nicolaas Aldegonda Jan Maria Van Aerle ,  Hjalmar Edzer Ayco Huitema

IPC分类号： H01L29/786 ,  H01L21/20

CPC分类号： H01L27/1251 ,  H01L27/124 ,  H01L27/1292 ,  H01L27/283 ,  H01L27/286 ,  H01L29/7869

摘要： The invention relates to an electronic device comprising a sequence of a first thin film transistor (TFT) and a second TFT, the first TFT comprising a first set of electrodes separated by a first insulator, the second TFT comprising a second set of electrodes separated by a second insulator, wherein the first set of electrodes and the second set of electrodes are formed from a first shared conductive layer and a second shared conductive layer, the first insulator and the second insulator being formed by a shared dielectric layer. The invention further relates to a method of manufacturing an electronic device.

摘要翻译： 本发明涉及一种包括第一薄膜晶体管（TFT）和第二TFT的序列的电子器件，所述第一TFT包括由第一绝缘体隔开的第一组电极，所述第二TFT包括第二组电极，所述第二组电极由 第二绝缘体，其中所述第一组电极和所述第二组电极由第一共用导电层和第二共用导电层形成，所述第一绝缘体和所述第二绝缘体由共用介电层形成。 本发明还涉及一种制造电子设备的方法。

公开(公告)号：US08766244B2

公开(公告)日：2014-07-01

申请号：US13559914

申请日：2012-07-27

申请人： Nick A. J. M. van Aerle ,  Erik van Veenendaal ,  Pieter van Lieshout ,  Christoph Wilhelm Sele ,  Joris P. V. Maas

发明人： Nick A. J. M. van Aerle ,  Erik van Veenendaal ,  Pieter van Lieshout ,  Christoph Wilhelm Sele ,  Joris P. V. Maas

IPC分类号： H01L35/24

CPC分类号： H01L27/3274 ,  G02F1/167 ,  H01L27/3265 ,  H01L27/3276 ,  H01L51/0558

摘要： Pixel control structure for use in a backplane for an electronic display, including a transistor that has a gate, a source, a drain, and an organic semiconductor element. The pixel control structure is formed by a first patterned conductive layer portion, a second patterned conductive layer portion, a dielectric layer portion, and an organic patterned semiconductive layer portion. The dielectric layer portion comprises an overlap region defined by overlap of the second conductive layer portion over the first conductive layer portion. The overlap region defines an overlap boundary, defined by an edge portion of the first patterned conductive layer portion and an edge portion of the second patterned conductive layer portion. The patterned semiconductive layer portion extends over the overlap region and away from the overlap region so as to extend from both first and second edge portions.

摘要翻译： 用于电子显示器的背板中的像素控制结构，包括具有栅极，源极，漏极和有机半导体元件的晶体管。 像素控制结构由第一图案化导电层部分，第二图案化导电层部分，电介质层部分和有机图案化半导体层部分形成。 电介质层部分包括通过第一导电层部分上的第二导电层部分的重叠限定的重叠区域。 重叠区域限定由第一图案化导电层部分的边缘部分和第二图案化导电层部分的边缘部分限定的重叠边界。 图案化半导体层部分在重叠区域上延伸并远离重叠区域，从而从第一和第二边缘部分延伸。

公开(公告)号：US08603922B2

公开(公告)日：2013-12-10

申请号：US12694969

申请日：2010-01-27

申请人： Christoph Wilhelm Sele ,  Nicolaas Aldegonda Jan Maria van Aerle ,  Eduard Jacobus Antonius Lassauw

发明人： Christoph Wilhelm Sele ,  Nicolaas Aldegonda Jan Maria van Aerle ,  Eduard Jacobus Antonius Lassauw

IPC分类号： H01L21/31

CPC分类号： H01L33/20 ,  H01L27/3246 ,  H01L27/3283 ,  H01L29/0684 ,  H01L51/0005 ,  H01L51/0012 ,  H01L51/0021 ,  H01L51/0097 ,  H01L51/0558

摘要： A method is described for manufacturing a semiconductor device that comprises the steps of providing on a substrate a layer of a conducting material in a pattern comprising isolated elements having a first set of edges. The method further includes providing, on the substrate, a series of wall structures for forming one or more cavities there between. The wall structures have a second set of edges cooperating with the first set of edges. The second set of edges is positioned outside the first set of edges by a pre-defined distance. The method furthermore includes depositing a liquid material in the cavities. A display and an electronic apparatus incorporating the above described features is also disclosed.

摘要翻译： 描述了一种用于制造半导体器件的方法，该方法包括以下步骤：在包括具有第一组边缘的隔离元件的图案的基板上提供导电材料层。 该方法还包括在衬底上提供用于在其间形成一个或多个空腔的一系列壁结构。 壁结构具有与第一组边缘配合的第二组边缘。 第二组边缘定位在第一组边缘之外的预定距离。 该方法还包括在空腔中沉积液体材料。 还公开了包含上述特征的显示器和电子设备。

公开(公告)号：US08686530B2

公开(公告)日：2014-04-01

申请号：US12669676

申请日：2008-07-16

申请人： Christoph Wilhelm Sele ,  Monica Johanna Beenhakkers ,  Gerwin Hermanus Gelinck ,  Nicolaas Aldegonda Jan Maria Van Aerle ,  Hjalmar Edzer Ayco Huitema

发明人： Christoph Wilhelm Sele ,  Monica Johanna Beenhakkers ,  Gerwin Hermanus Gelinck ,  Nicolaas Aldegonda Jan Maria Van Aerle ,  Hjalmar Edzer Ayco Huitema

IPC分类号： H01L29/02

CPC分类号： H01L21/283 ,  H01L21/31133 ,  H01L27/3244 ,  H01L27/3276 ,  H01L51/0021 ,  H01L51/0533

摘要： An electronic component, notably one including, for example, a TFT, a storage capacitor, or a crossing between electrically conductive layers of a stack device is disclosed. The electronic component comprises a substrate whereon a first electrically conductive layer forming electrode is provided. A second electrode formed by a second electrically conductive layer is separated from the first electrode by at least a dielectric layer, comprising an interlayer of an electrically insulating material, preferably having high resistance against electrical breakdown and a further layer of a photo-patternable electrically insulating material.

摘要翻译： 公开了一种电子部件，特别是包括例如TFT，存储电容器或堆叠装置的导电层之间的交叉的电子部件。 电子部件包括设置有第一导电层形成电极的基板。 由第二导电层形成的第二电极通过至少一个电介质层与第一电极分开，该电介质层包括电绝缘材料的中间层，优选地具有高的电击穿电阻，以及另一层可光电构造的电绝缘层 材料。

公开(公告)号：US20110180785A1

公开(公告)日：2011-07-28

申请号：US12694949

申请日：2010-01-27

申请人： Christoph Wilhelm Sele ,  Kevin Michael O'Neill ,  Nicolaas Aldegonda Jan Maria van Aerle

发明人： Christoph Wilhelm Sele ,  Kevin Michael O'Neill ,  Nicolaas Aldegonda Jan Maria van Aerle

IPC分类号： H01L51/10

CPC分类号： B82Y10/00 ,  H01L51/0046 ,  H01L51/0067 ,  H01L51/0537 ,  H01L51/0566 ,  H01L51/107

摘要： A transistor structure is described herein that includes a semiconductor layer and a dielectric layer. In accordance with the disclosure, at least one of the semiconductor layer and/or the dielectric layer comprises a chemical additive having a higher reaction potential for a chemical species present in an environment than a material of the semiconductor layer and/or the dielectric layer.

摘要翻译： 本文描述了包括半导体层和电介质层的晶体管结构。 根据本公开，半导体层和/或电介质层中的至少一个包括对于存在于环境中的化学物质具有比半导体层和/或电介质层的材料更高的反应电位的化学添加剂。

公开(公告)号：US20140027717A1

公开(公告)日：2014-01-30

申请号：US13559914

申请日：2012-07-27

申请人： Nick A.J.M. van Aerle ,  Erik Van Veenendaal ,  Pieter Van Lieshout ,  Christoph Wilhelm Sele ,  Joris P.V. Maas

发明人： Nick A.J.M. van Aerle ,  Erik Van Veenendaal ,  Pieter Van Lieshout ,  Christoph Wilhelm Sele ,  Joris P.V. Maas

IPC分类号： H01L51/52 ,  H01L21/336 ,  H01L27/15 ,  H01L29/786 ,  H01L33/16

CPC分类号： H01L27/3274 ,  G02F1/167 ,  H01L27/3265 ,  H01L27/3276 ,  H01L51/0558

摘要： Pixel control structure for use in a backplane for an electronic display, including a transistor that has a gate, a source, a drain, and an organic semiconductor element. The pixel control structure is formed by a first patterned conductive layer portion, a second patterned conductive layer portion, a dielectric layer portion, and an organic patterned semiconductive layer portion. The dielectric layer portion comprises an overlap region defined by overlap of the second conductive layer portion over the first conductive layer portion. The overlap region defines an overlap boundary, defined by an edge portion of the first patterned conductive layer portion and an edge portion of the second patterned conductive layer portion. The patterned semiconductive layer portion extends over the overlap region and away from the overlap region so as to extend from both first and second edge portions.

摘要翻译： 用于电子显示器的背板中的像素控制结构，包括具有栅极，源极，漏极和有机半导体元件的晶体管。 像素控制结构由第一图案化导电层部分，第二图案化导电层部分，电介质层部分和有机图案化半导体层部分形成。 电介质层部分包括通过第一导电层部分上的第二导电层部分的重叠限定的重叠区域。 重叠区域限定由第一图案化导电层部分的边缘部分和第二图案化导电层部分的边缘部分限定的重叠边界。 图案化半导体层部分在重叠区域上延伸并远离重叠区域，从而从第一和第二边缘部分延伸。

公开(公告)号：US20110180816A1

公开(公告)日：2011-07-28

申请号：US12694969

申请日：2010-01-27

申请人： Christoph Wilhelm Sele ,  Nicolaas Aldegonda Jan Maria van Aerle ,  Eduard Jacobus Antonius Lassauw

发明人： Christoph Wilhelm Sele ,  Nicolaas Aldegonda Jan Maria van Aerle ,  Eduard Jacobus Antonius Lassauw

IPC分类号： H01L33/00 ,  H01L21/20 ,  H01L29/66

CPC分类号： H01L33/20 ,  H01L27/3246 ,  H01L27/3283 ,  H01L29/0684 ,  H01L51/0005 ,  H01L51/0012 ,  H01L51/0021 ,  H01L51/0097 ,  H01L51/0558

摘要： A method is described for manufacturing a semiconductor device that comprises the steps of providing on a substrate a layer of a conducting material in a pattern comprising isolated elements having a first set of edges. The method further includes providing, on the substrate, a series of wall structures for forming one or more cavities there between. The wall structures have a second set of edges cooperating with the first set of edges. The second set of edges is positioned outside the first set of edges by a pre-defined distance. The method furthermore includes depositing a liquid material in the cavities. A display and an electronic apparatus incorporating the above described features is also disclosed.

摘要翻译： 描述了一种用于制造半导体器件的方法，该方法包括以下步骤：在包括具有第一组边缘的隔离元件的图案的基板上提供导电材料层。 该方法还包括在衬底上提供用于在其间形成一个或多个空腔的一系列壁结构。 壁结构具有与第一组边缘配合的第二组边缘。 第二组边缘定位在第一组边缘之外的预定距离。 该方法还包括在空腔中沉积液体材料。 还公开了包括上述特征的显示器和电子设备。

公开(公告)号：US07407849B2

公开(公告)日：2008-08-05

申请号：US10499665

申请日：2002-12-20

申请人： Henning Sirringhaus ,  Michael J. Banach ,  Nicholas Jim Stone ,  David William Joseph Wilson ,  John Devin Mackenzie ,  Wilhelmus Theodorus Stefanus Huck ,  Christoph Wilhelm Sele

发明人： Henning Sirringhaus ,  Michael J. Banach ,  Nicholas Jim Stone ,  David William Joseph Wilson ,  John Devin Mackenzie ,  Wilhelmus Theodorus Stefanus Huck ,  Christoph Wilhelm Sele

IPC分类号： H01L21/336

CPC分类号： H01L51/0516 ,  B82Y30/00 ,  H01L51/0004 ,  H01L51/0017 ,  H01L51/0021 ,  H01L51/0037 ,  H01L51/0541 ,  H01L51/0545

摘要： A method for forming an organic or partly organic switching device. The method comprises depositing layers of conducing, semiconducting and/or insulating layers by solution processing and direct printing. Then, high-resolution patterns of electroactive polymers are formed by self-aligned formation of a surface energy barrier around a first pattern that repels the solution of a second material.

摘要翻译： 一种用于形成有机或部分有机开关装置的方法。 该方法包括通过溶液处理和直接印刷沉积导电，半导体和/或绝缘层的层。 然后，电活性聚合物的高分辨率图案通过围绕排斥第二材料的溶液的第一图案的自对准形成表面能势垒而形成。