摘要:
Bis(alkylimido)-bis(alkylamido)molybdenum compounds, their synthesis, and their use for the deposition of molybdenum-containing films are disclosed.
摘要:
Disclosed are precursors having a pyrrolecarbaldiminates ligand and methods of synthesizing the same. The pyrrolecarbaldiminates ligand may be substituted.
摘要:
Disclosed are metal-containing precursors having the formula Compound (I) wherein: —M is a metal selected from Ni, Co, Mn, Pd; and —each of R-1, R2, R3, R4, R5, R6, R7, R8, R9, and R10 are independently selected from H; a C1-C4 linear, branched, or cyclic alkyl group; a C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or tris alkyl); a C1-C4 linear, branched, or cyclic alkylamino group; or a C1-C4 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing and using the disclosed metal-containing precursors to deposit metal-containing films on a substrate via a vapor deposition process.
摘要:
Disclosed are precursors having a pyrrolecarbaldiminates ligand and methods of synthesizing the same. The pyrrolecarbaldiminates ligand may be substituted.
摘要:
The present invention discloses metallic complexes based on carbonylamino fulvene ligands; their method of preparation and their use in the oligomerisation or polymerisation of ethylene and alpha-olefins.
摘要:
Disclosed are precursors having a pyrrolecarbaldiminates ligand and methods of synthesizing the same. The pyrrolecarbaldiminates ligand may be substituted.
摘要:
Disclosed are processes for the use of bis-ketoiminate copper precursors for the deposition of copper-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).
摘要:
Disclosed are precursors having a pyrrolecarbaldiminates ligand and methods of synthesizing the same. The pyrrolecarbaldiminates ligand may be substituted.
摘要:
Disclosed are processes of removing layers from substrates using fluorinated reactants having the formula MFx(adduct)n, wherein x ranges from 2 to 6 inclusive; n ranges from 0 to 5 inclusive; M is selected from the group consisting of P, Ti, Zr, Hf, V, Nb, Ta, Mo, and W; and the adduct is a neutral organic molecule selected from THF, dimethylether, diethylether, glyme, diglyme, triglyme, polyglyme, dimethylsulphide, diethylsulphide, or methylcyanide. The fluorinated reactants dry etch the nitride layers without utilizing any plasma.