利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

6 条记录 (耗时 0.01 秒)

    Diffusion Sources From Silicon Based Liquid Precursors
    1.
    发明申请
    Diffusion Sources From Silicon Based Liquid Precursors 有权
    来自硅基液体前体的扩散源

    公开(公告)号：US20120052618A1

    公开(公告)日：2012-03-01

    申请号：US12873320

    申请日：2010-09-01

    申请人： Daniel Inns

    发明人： Daniel Inns

    IPC分类号： H01L21/225 ,  H01L31/18

    CPC分类号： H01L21/228 ,  H01L21/2225 ,  H01L21/2255 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547

    摘要： Methods for selectively diffusing dopants into a substrate wafer are provided. A liquid precursor is doped with dopants. The liquid precursor is selected from a group comprising monomers, polymers, and oligomers of silicon and hydrogen. The doped liquid precursor is deposited on a surface of the substrate wafer to create a doped film. The doped film is heated on the substrate wafer for diffusing the dopants from the doped film into the substrate wafer at different diffusion rates to create a heavily diffused region and a lightly diffused region in the substrate wafer. The method disclosed herein further comprises selective curing of the doped film on the surface of the substrate wafer. The selectively cured doped film acts as a diffusion source for selectively diffusing the dopants into the substrate wafer.

    摘要翻译： 提供了将掺杂剂选择性地扩散到衬底晶片中的方法。 液体前体掺杂有掺杂剂。 液体前体选自硅和氢的单体，聚合物和低聚物的组。 掺杂的液体前体沉积在衬底晶片的表面上以产生掺杂的膜。 掺杂的膜在衬底晶片上被加热，用于以掺杂的薄膜将掺杂剂以不同的扩散速率扩散到衬底晶片中，以在衬底晶片中产生高度扩散的区域和轻度扩散的区域。 本文公开的方法还包括在衬底晶片的表面上选择性固化掺杂膜。 选择性固化的掺杂膜充当用于选择性地将掺杂剂扩散到衬底晶片中的扩散源。

    Layer transfer using boron-doped SiGe layer
    2.
    发明授权
    Layer transfer using boron-doped SiGe layer 有权
    使用硼掺杂的SiGe层进行层转移

    公开(公告)号：US07935612B1

    公开(公告)日：2011-05-03

    申请号：US12700801

    申请日：2010-02-05

    申请人： Stephen Bedell ,  Keith Fogel ,  Daniel Inns ,  Jeehwan Kim ,  Devendra Sadana ,  James Vichiconti

    发明人： Stephen Bedell ,  Keith Fogel ,  Daniel Inns ,  Jeehwan Kim ,  Devendra Sadana ,  James Vichiconti

    IPC分类号： H01L21/30 ,  H01L21/02

    CPC分类号： H01L21/187

    摘要： A method for layer transfer using a boron-doped silicon germanium (SiGe) layer includes forming a boron-doped SiGe layer on a bulk silicon substrate; forming an upper silicon (Si) layer over the boron-doped SiGe layer; hydrogenating the boron-doped SiGe layer; bonding the upper Si layer to an alternate substrate; and propagating a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate. A system for layer transfer using a boron-doped silicon germanium (SiGe) layer includes a bulk silicon substrate; a boron-doped SiGe layer formed on the bulk silicon substrate, such that the boron-doped SiGe layer is located underneath an upper silicon (Si) layer, wherein the boron-doped SiGe layer is configured to propagate a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate after hydrogenation of the boron-doped SiGe layer; and an alternate substrate bonded to the upper Si layer.

    摘要翻译： 使用硼掺杂硅锗（SiGe）层进行层转移的方法包括在体硅衬底上形成硼掺杂的SiGe层; 在掺杂硼的SiGe层上形成上硅（Si）层; 氢化硼掺杂的SiGe层; 将上部Si层结合到替代的基底上; 并在硼掺杂的SiGe层和体硅衬底之间的界面处传播断裂。 使用硼掺杂硅锗（SiGe）层的层转移系统包括体硅衬底; 形成在本体硅衬底上的硼掺杂SiGe层，使得掺杂硼的SiGe层位于上硅（Si）层的下方，其中掺硼的SiGe层被配置为在 硼掺杂的SiGe层和硼硅掺杂SiGe层氢化后的体硅衬底; 以及与上部Si层接合的替代基板。

    Diffusion sources from liquid precursors
    4.
    发明授权
    Diffusion sources from liquid precursors 有权
    来自液体前体的扩散源

    公开(公告)号：US08669169B2

    公开(公告)日：2014-03-11

    申请号：US12873320

    申请日：2010-09-01

    申请人： Daniel Inns

    发明人： Daniel Inns

    IPC分类号： H01L21/265

    CPC分类号： H01L21/228 ,  H01L21/2225 ,  H01L21/2255 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547

    摘要： Methods for selectively diffusing dopants into a substrate wafer are provided. A liquid precursor is doped with dopants. The liquid precursor is selected from a group comprising monomers, polymers, and oligomers of silicon and hydrogen. The doped liquid precursor is deposited on a surface of the substrate wafer to create a doped film. The doped film is heated on the substrate wafer for diffusing the dopants from the doped film into the substrate wafer at different diffusion rates to create a heavily diffused region and a lightly diffused region in the substrate wafer. The method disclosed herein further comprises selective curing of the doped film on the surface of the substrate wafer. The selectively cured doped film acts as a diffusion source for selectively diffusing the dopants into the substrate wafer.

    摘要翻译： 提供了将掺杂剂选择性地扩散到衬底晶片中的方法。 液体前体掺杂有掺杂剂。 液体前体选自硅和氢的单体，聚合物和低聚物的组。 掺杂的液体前体沉积在衬底晶片的表面上以产生掺杂的膜。 掺杂的膜在衬底晶片上被加热，用于以掺杂的薄膜将掺杂剂以不同的扩散速率扩散到衬底晶片中，以在衬底晶片中产生高度扩散的区域和轻微扩散的区域。 本文公开的方法还包括在衬底晶片的表面上选择性固化掺杂膜。 选择性固化的掺杂膜充当用于选择性地将掺杂剂扩散到衬底晶片中的扩散源。