Overlay metrology by pupil phase analysis
    3.
    发明授权
    Overlay metrology by pupil phase analysis 有权
    通过瞳孔相位分析覆盖度量

    公开(公告)号:US08582114B2

    公开(公告)日:2013-11-12

    申请号:US13209778

    申请日:2011-08-15

    IPC分类号: G01B11/02

    CPC分类号: G03F7/70633

    摘要: The present invention may include measuring a first phase distribution across a pupil plane of a portion of illumination reflected from a first overlay target of a semiconductor wafer, wherein the first overlay target is fabricated to have a first intentional overlay, measuring a second phase distribution across the pupil plane of a portion of illumination reflected from a second overlay target, wherein the second overlay target is fabricated to have a second intentional overlay in a direction opposite to and having the same magnitude as the first intentional overlay, determining a first phase tilt associated with a sum of the first and second phase distributions, determining a second phase tilt associated with a difference between the first and second phase distributions, calibrating a set of phase tilt data, and determining a test overlay value associated with the first and second overlay target.

    摘要翻译: 本发明可以包括测量跨越从半导体晶片的第一覆盖目标反射的照明部分的光瞳平面的第一相分布,其中第一覆盖目标被制造为具有第一有意覆盖,测量第二相位分布 从第二覆盖目标反射的照明部分的光瞳平面,其中第二覆盖目标被制造为具有与第一有意重叠相反并具有相同幅度的方向的第二有意覆盖,确定相关联的第一相位倾斜 具有第一和第二相位分布的总和,确定与第一和第二相位分布之间的差相关联的第二相位倾斜,校准一组相位倾斜数据,以及确定与第一和第二覆盖目标相关联的测试覆盖值 。

    OVERLAY METROLOGY BY PUPIL PHASE ANALYSIS
    4.
    发明申请
    OVERLAY METROLOGY BY PUPIL PHASE ANALYSIS 有权
    通过相位分析的覆盖度量

    公开(公告)号:US20130044331A1

    公开(公告)日:2013-02-21

    申请号:US13209778

    申请日:2011-08-15

    IPC分类号: G01B11/14 G01B11/26

    CPC分类号: G03F7/70633

    摘要: The present invention may include measuring a first phase distribution across a pupil plane of a portion of illumination reflected from a first overlay target of a semiconductor wafer, wherein the first overlay target is fabricated to have a first intentional overlay, measuring a second phase distribution across the pupil plane of a portion of illumination reflected from a second overlay target, wherein the second overlay target is fabricated to have a second intentional overlay in a direction opposite to and having the same magnitude as the first intentional overlay, determining a first phase tilt associated with a sum of the first and second phase distributions, determining a second phase tilt associated with a difference between the first and second phase distributions, calibrating a set of phase tilt data, and determining a test overlay value associated with the first and second overlay target.

    摘要翻译: 本发明可以包括测量跨越从半导体晶片的第一覆盖目标反射的照明部分的光瞳平面的第一相分布,其中第一覆盖目标被制造为具有第一有意覆盖,测量第二相位分布 从第二覆盖目标反射的照明部分的光瞳平面,其中第二覆盖目标被制造为具有与第一有意重叠相反并具有相同幅度的方向的第二有意覆盖,确定相关联的第一相位倾斜 具有第一和第二相位分布的总和,确定与第一和第二相位分布之间的差相关联的第二相位倾斜,校准一组相位倾斜数据,以及确定与第一和第二覆盖目标相关联的测试覆盖值 。

    METHOD AND SYSTEM FOR PROVIDING A QUALITY METRIC FOR IMPROVED PROCESS CONTROL
    6.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A QUALITY METRIC FOR IMPROVED PROCESS CONTROL 审中-公开
    提供改进过程控制质量标准的方法和系统

    公开(公告)号:US20130035888A1

    公开(公告)日:2013-02-07

    申请号:US13508495

    申请日:2012-04-04

    IPC分类号: G01N37/00 G06F19/00

    摘要: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

    摘要翻译: 本发明可以包括从分布在许多晶片的晶片的一个或多个场上的多个测量目标获取多个覆盖度量测量信号,为多个覆盖度量测量信号中的每一个确定多个重叠估计 使用多个覆盖算法,生成多个覆盖估计分布,以及利用所生成的多个覆盖估计分布来生成第一多个质量度量,其中每个质量度量对应于所生成的多个覆盖估计分布的一个覆盖估计分布 每个质量度量是对应的生成的重叠估计分布的宽度的函数,每个质量度量还是来自相关度量目标的覆盖度量测量信号中存在的不对称的函数。

    ILLUMINATION CONTROL
    7.
    发明申请
    ILLUMINATION CONTROL 有权
    照明控制

    公开(公告)号:US20120327503A1

    公开(公告)日:2012-12-27

    申请号:US13170025

    申请日:2011-06-27

    摘要: An optical system may include an objective, a source of illumination, an illumination system having illumination optics configured to direct the illumination onto the objective, and at least two dynamic optical array devices located at a pupil conjugate plane and a field conjugate plane, respectively in the illumination optics. The dynamic optical array devices are configured to control one or more properties of illumination coupled from the illumination system to the objective.

    摘要翻译: 光学系统可以包括目标,照明源,具有被配置为将照明引导到物镜上的照明光学器件的照明系统,以及分别位于瞳孔共轭平面和场共轭平面处的至少两个动态光学阵列器件 照明光学。 动态光学阵列器件被配置为控制从照明系统耦合到目标的照明的一个或多个特性。

    Illumination control
    8.
    发明授权
    Illumination control 有权
    照明控制

    公开(公告)号:US08681413B2

    公开(公告)日:2014-03-25

    申请号:US13170025

    申请日:2011-06-27

    IPC分类号: G02B26/00 G02B26/08

    摘要: An optical system may include an objective, a source of illumination, an illumination system having illumination optics configured to direct the illumination onto the objective, and at least two dynamic optical array devices located at a pupil conjugate plane and a field conjugate plane, respectively in the illumination optics. The dynamic optical array devices are configured to control one or more properties of illumination coupled from the illumination system to the objective.

    摘要翻译: 光学系统可以包括目标,照明源,具有被配置为将照明引导到物镜上的照明光学器件的照明系统,以及分别位于瞳孔共轭平面和场共轭平面处的至少两个动态光学阵列器件 照明光学。 动态光学阵列器件被配置为控制从照明系统耦合到目标的照明的一个或多个特性。

    ANGLE-RESOLVED ANTISYMMETRIC SCATTEROMETRY
    9.
    发明申请
    ANGLE-RESOLVED ANTISYMMETRIC SCATTEROMETRY 有权
    角解决的反对称散射测量

    公开(公告)号:US20120120396A1

    公开(公告)日:2012-05-17

    申请号:US13386524

    申请日:2010-07-21

    IPC分类号: G01B11/00

    摘要: A method for determining an overlay offset may include, but is not limited to: obtaining a first anti-symmetric differential signal (ΔS1) associated with a first scatterometry cell; obtaining a second anti-symmetric differential signal (ΔS2) associated with a second scatterometry cell and computing an overlay offset from the first anti-symmetric differential (ΔS1) signal associated with the first scatterometry cell and the second anti-symmetric differential signal (ΔS2) associated with the second scatterometry cell.

    摘要翻译: 用于确定覆盖偏移的方法可以包括但不限于:获得与第一散射测量单元相关联的第一反对称差分信号(&Dgr; S1); 获得与第二散射测量单元相关联的第二反对称差分信号(&Dgr; S2),并计算与第一散射测量单元和第二反对称差分相关联的第一反对称差分(&Dgr; S1)信号的叠加偏移 与第二散射测量单元相关联的信号(&Dgr; S2)。

    Angle-resolved antisymmetric scatterometry
    10.
    发明授权
    Angle-resolved antisymmetric scatterometry 有权
    角分辨反对称散射法

    公开(公告)号:US08848186B2

    公开(公告)日:2014-09-30

    申请号:US13386524

    申请日:2010-07-21

    摘要: A method for determining an overlay offset may include, but is not limited to: obtaining a first anti-symmetric differential signal (ΔS1) associated with a first scatterometry cell; obtaining a second anti-symmetric differential signal (ΔS2) associated with a second scatterometry cell and computing an overlay offset from the first anti-symmetric differential (ΔS1) signal associated with the first scatterometry cell and the second anti-symmetric differential signal (ΔS2) associated with the second scatterometry cell.

    摘要翻译: 用于确定覆盖偏移的方法可以包括但不限于:获得与第一散射测量单元相关联的第一反对称差分信号(&Dgr; S1); 获得与第二散射测量单元相关联的第二反对称差分信号(&Dgr; S2),并计算与第一散射测量单元和第二反对称差分相关联的第一反对称差分(&Dgr; S1)信号的叠加偏移 与第二散射测量单元相关联的信号(&Dgr; S2)。