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87 条记录 (耗时 0.035 秒)

    Methods for accessing data in a compressed file system and devices thereof
    1.
    再颁专利
    Methods for accessing data in a compressed file system and devices thereof 有权

    公开(公告)号：USRE48725E1

    公开(公告)日：2021-09-07

    申请号：US15499499

    申请日：2017-04-27

    申请人： Sumandra Majee ,  David Hansen

    发明人： Sumandra Majee ,  David Hansen

    IPC分类号： H04L12/46 ,  G06F12/10 ,  H04L12/24 ,  H04L29/06

    摘要： A method, computer readable medium, and network traffic management apparatus that accesses data in a compressed file system includes obtaining an original write request from a client computing device including at least object data. The object data is compressed into a plurality of compressed blocks. A mapping of each compressed block to a portion of the object data compressed therein is generated, wherein the portion of the object data compressed therein is represented in the mapping by a unique object identifier, a start offset, and a length. The compressed blocks and the mapping are stored in at least one data storage device. At least one data access request for at least a portion of the object data is serviced based on the mapping.

    Memory device using ion implant isolated conductive metal oxide
    3.
    发明授权
    Memory device using ion implant isolated conductive metal oxide 有权
    使用离子注入隔离导电金属氧化物的存储器件

    公开(公告)号：US08268667B2

    公开(公告)日：2012-09-18

    申请号：US13215895

    申请日：2011-08-23

    申请人： Darrell Rinerson ,  Robin Cheung ,  David Hansen ,  Steven Longcor ,  Rene Meyer ,  Jonathan Bornstein ,  Lawrence Schloss

    发明人： Darrell Rinerson ,  Robin Cheung ,  David Hansen ,  Steven Longcor ,  Rene Meyer ,  Jonathan Bornstein ,  Lawrence Schloss

    IPC分类号： H01L21/00

    CPC分类号： F01D17/26 ,  F04D29/563 ,  H01L21/02565 ,  H01L27/0688 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1666

    摘要： Memory cell formation using ion implant isolated conductive metal oxide is disclosed, including forming a bottom electrode below unetched conductive metal oxide layer(s), forming the unetched conductive metal oxide layer(s) including depositing at least one layer of a conductive metal oxide (CMO) material (e.g., PrCaMnOx, LaSrCoOx, LaNiOx, etc.) over the bottom electrode. At least one portion of the layer of CMO is configured to act as a memory element without etching, and performing ion implantation on portions of the layer(s) of CMO to create insulating metal oxide (IMO) regions in the layer(s) of CMO. The IMO regions are positioned adjacent to electrically conductive CMO regions in the unetched layer(s) of CMO and the electrically conductive CMO regions are disposed above and in contact with the bottom electrode and form memory elements operative to store non-volatile data as a plurality of conductivity profiles (e.g., resistive states indicative of stored data).

    摘要翻译： 公开了使用离子注入隔离的导电金属氧化物的存储单元形成，包括在未蚀刻的导电金属氧化物层之下形成底部电极，形成未蚀刻的导电金属氧化物层，包括沉积至少一层导电金属氧化物（ CMO）材料（例如，PrCaMnOx，LaSrCoOx，LaNiOx等）。 CMO层的至少一部分被配置为用作存储元件而不进行蚀刻，并且在CMO的层的部分上执行离子注入以在层的一个或多个层中形成绝缘金属氧化物（IMO）区域 CMO。 IMO区域邻近CMO的未蚀刻层中的导电CMO区域定位，并且导电CMO区域设置在底部电极的上方并与底部电极接触并且形成用于将非易失性数据存储为多个的存储元件 （例如，表示存储数据的电阻状态）。

    Memory Device Using A Dual Layer Conductive Metal Oxide Structure
    4.
    发明申请
    Memory Device Using A Dual Layer Conductive Metal Oxide Structure 审中-公开
    使用双层导电金属氧化物结构的存储器件

    公开(公告)号：US20110315943A1

    公开(公告)日：2011-12-29

    申请号：US13225190

    申请日：2011-09-02

    申请人： DARRELL RINERSON ,  JONATHAN BORNSTEIN ,  DAVID HANSEN ,  ROBIN CHEUNG ,  STEVEN W. LONGCOR ,  RENE MEYER ,  LAWRENCE SCHLOSS

    发明人： DARRELL RINERSON ,  JONATHAN BORNSTEIN ,  DAVID HANSEN ,  ROBIN CHEUNG ,  STEVEN W. LONGCOR ,  RENE MEYER ,  LAWRENCE SCHLOSS

    IPC分类号： H01L45/00 ,  B82Y99/00

    CPC分类号： F01D17/26 ,  F04D29/563 ,  H01L21/02565 ,  H01L27/0688 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1666

    摘要： Memory cell formation using ion implant isolated conductive metal oxide is disclosed, including forming a bottom electrode below un-etched conductive metal oxide layer(s), forming the un-etched conductive metal oxide layer(s) including depositing at least one layer of a conductive metal oxide (CMO) material (e.g., PrCaMnOx, LaSrCoOx, LaNiOx, etc.) over the bottom electrode. At least one portion of the layer of CMO is configured to act as a memory element without etching, and performing ion implantation on portions of the layer(s) of CMO to create insulating metal oxide (IMO) regions in the layer(s) of CMO. The IMO regions are positioned adjacent to electrically conductive CMO regions in the un-etched layer(s) of CMO and the electrically conductive CMO regions are disposed above and in contact with the bottom electrode and form memory elements operative to store non-volatile data as a plurality of conductivity profiles (e.g., resistive states indicative of stored data).

    摘要翻译： 公开了使用离子注入隔离的导电金属氧化物的存储单元形成，包括在未蚀刻的导电金属氧化物层之下形成底部电极，形成未蚀刻的导电金属氧化物层，包括沉积至少一层 导电金属氧化物（CMO）材料（例如PrCaMnOx，LaSrCoOx，LaNiOx等）。 CMO层的至少一部分被配置为用作存储元件而不进行蚀刻，并且在CMO的层的部分上执行离子注入以在层的一个或多个层中形成绝缘金属氧化物（IMO）区域 CMO。 IMO区域定位在CMO的未蚀刻层中的导电CMO区域附近，并且导电CMO区域设置在底部电极的上方并与底部电极接触并形成用于存储非易失性数据的存储元件 多个电导率分布（例如，表示存储的数据的电阻状态）。

    Continuous plane of thin-film materials for a two-terminal cross-point memory
    5.
    发明申请
    Continuous plane of thin-film materials for a two-terminal cross-point memory 审中-公开
    用于两端交叉点存储器的薄膜材料的连续平面

    公开(公告)号：US20110133147A1

    公开(公告)日：2011-06-09

    申请号：US12931773

    申请日：2011-02-09

    申请人： Robin Cheung ,  Darrell Rinerson ,  Travis Byonghyop Oh ,  Jon Bornstein ,  David Hansen

    发明人： Robin Cheung ,  Darrell Rinerson ,  Travis Byonghyop Oh ,  Jon Bornstein ,  David Hansen

    IPC分类号： H01L29/02

    CPC分类号： H01L27/101 ,  H01L27/2418 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1641 ,  H01L45/165 ,  Y10S257/903

    摘要： A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of conductivity profiles. A select voltage applied across the first and second cladded conductors is operative to perform data operations on the memory device. The memory device may optionally include a non-ohmic device electrically in series with the memory element and the first and second cladded conductors. Fabrication of the memory device does not require the plurality of thin-film layers be etched in order to form the memory element. The memory element can include a CMO layer having a selectively crystallized polycrystalline portion and an amorphous portion. The cladded conductors can include a core material made from copper.

    摘要翻译： 公开了一种包括多个基本平坦的薄膜层或多个共形薄膜层的存储器件的结构。 薄膜层形成与第一和第二包覆导体电串联的存储元件，并且可操作以将数据存储为多个电导率分布。 施加在第一和第二包层导体上的选择电压用于在存储器件上执行数据操作。 存储器件可以可选地包括与存储元件和第一和第二包层导体串联电的非欧姆器件。 为了形成存储元件，存储器件的制造不需要蚀刻多个薄膜层。 存储元件可以包括具有选择性结晶的多晶部分和非晶部分的CMO层。 包层导体可以包括由铜制成的芯材料。

    COVERED IN-FLOOR RECEPTACLE BOX
    6.
    发明申请
    COVERED IN-FLOOR RECEPTACLE BOX 有权
    覆盖的地板接收盒

    公开(公告)号：US20100051308A1

    公开(公告)日：2010-03-04

    申请号：US12199950

    申请日：2008-08-28

    申请人： David Hansen ,  John Macaluso

    发明人： David Hansen ,  John Macaluso

    IPC分类号： H01R13/46 ,  H05K5/06

    CPC分类号： H02G3/185

    摘要： An in-floor receptacle or electrical conduit box with a compartment divider removably attached to a gang-plate divider, a gang-plate divider removably attached to a gang-unit holder, at least one gang-unit holder removably attached to the inside of the box, and at least one knockout located on each side or floor of the box. The in-floor electrical conduit box enables the connection of permanent cables, wires or cords to temporary cables, wires or cords.The in-floor electrical conduit box further comprises a lid with at least one removable door whereby the removal of the door permits cable access to the box while the box is still covered.

    摘要翻译： 一个地板上的插座或电气导管盒，带有可拆卸地连接到组合板分隔器的隔室分隔件，可拆卸地附接到组合单元保持器的组合板分隔件，至少一个组合单元保持器，其可移除地附接到 盒子，以及位于盒子的每一侧或底部的至少一个敲门器。 地板电气管道箱可以将永久电缆，电线或电线连接到临时电缆，电线或电线。 地板上的电气导管盒还包括具有至少一个可拆卸门的盖子，由此当箱子仍被覆盖时，门的移除允许电缆进入盒子。

    Automatic ONT Self Disabling System, Method, and Computer Readable Medium
    8.
    发明申请
    Automatic ONT Self Disabling System, Method, and Computer Readable Medium 有权
    自动ONT自动禁用系统，方法和计算机可读介质

    公开(公告)号：US20080138062A1

    公开(公告)日：2008-06-12

    申请号：US11940377

    申请日：2007-11-15

    申请人： RAYMOND E. TYRRELL ,  COLLINS WILLIAMS ,  JOHN P. MATHEW ,  DAVID HANSEN

    发明人： RAYMOND E. TYRRELL ,  COLLINS WILLIAMS ,  JOHN P. MATHEW ,  DAVID HANSEN

    IPC分类号： H04B10/00 ,  H04J14/00

    CPC分类号： H04J3/14 ,  H04J3/0682 ,  H04J2203/006 ,  H04J2203/0062

    摘要： A system, method and computer readable medium comprising instructions for sending a message from an Optical Network Terminal (ONT) to an Optical Line Terminal (OLT), if the ONT does not receive an expected OLT action or an expected OLT response to the message within a period, considering the non-receipt of the expected OLT action or the expected OLT response a failure, and if a certain number of consecutive failures have occurred, considering by the ONT that it has entered an uncontrolled state.

    摘要翻译： 一种系统，方法和计算机可读介质，包括如果ONT没有接收到期望的OLT动作或对该消息的期望的OLT响应，则将指示从光网络终端（ONT）发送到光线路终端（OLT） 考虑未预期的OLT动作或预期的OLT响应失败，并且如果发生了一定数量的连续故障，则由ONT考虑已经进入不受控状态。

    Assembly and method for automated operation of a restroom door
    9.
    发明申请
    Assembly and method for automated operation of a restroom door 审中-公开
    洗手间门自动操作的组装和方法

    公开(公告)号：US20070256362A1

    公开(公告)日：2007-11-08

    申请号：US11714347

    申请日：2007-03-05

    申请人： Curtis David Hansen

    发明人： Curtis David Hansen

    IPC分类号： E05F15/10

    CPC分类号： E05F3/102 ,  E05B47/0046 ,  E05F15/00 ,  E05F15/63 ,  E05F15/75 ,  E05F2003/228 ,  E05F2015/631 ,  E05Y2400/822 ,  E05Y2900/112 ,  E05Y2900/132 ,  E05Y2900/531 ,  E05Y2900/538

    摘要： Some embodiments are directed to an automated exit apparatus for a lockable privacy restroom comprising: a door operator, an electronically activatable motorized strike system, and a door actuator operable without physical contact by a user's hand that is mounted on an interior of a privacy restroom. The actuator may be user-actuatable to unlock the door by electronically activating the motor for the strike and to open the door by electronically activating the operator.

    摘要翻译： 一些实施例涉及一种用于可锁定的隐私卫生间的自动退出装置，包括：门操作者，电子可激活的电动打击系统，以及可由用户的手进行物理接触的门致动器，所述门致动器安装在隐私卫生间的内部。 致动器可以是用户可致动的，以通过电子地激活用于罢工的电动机来打开门，并且通过电子地激活操作者来打开门。