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    Memory Device Using A Dual Layer Conductive Metal Oxide Structure
    1.
    发明申请
    Memory Device Using A Dual Layer Conductive Metal Oxide Structure 审中-公开
    使用双层导电金属氧化物结构的存储器件

    公开(公告)号：US20110315943A1

    公开(公告)日：2011-12-29

    申请号：US13225190

    申请日：2011-09-02

    Applicant: DARRELL RINERSON ,  JONATHAN BORNSTEIN ,  DAVID HANSEN ,  ROBIN CHEUNG ,  STEVEN W. LONGCOR ,  RENE MEYER ,  LAWRENCE SCHLOSS

    Inventor： DARRELL RINERSON ,  JONATHAN BORNSTEIN ,  DAVID HANSEN ,  ROBIN CHEUNG ,  STEVEN W. LONGCOR ,  RENE MEYER ,  LAWRENCE SCHLOSS

    IPC: H01L45/00 ,  B82Y99/00

    CPC classification number: F01D17/26 ,  F04D29/563 ,  H01L21/02565 ,  H01L27/0688 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1666

    Abstract: Memory cell formation using ion implant isolated conductive metal oxide is disclosed, including forming a bottom electrode below un-etched conductive metal oxide layer(s), forming the un-etched conductive metal oxide layer(s) including depositing at least one layer of a conductive metal oxide (CMO) material (e.g., PrCaMnOx, LaSrCoOx, LaNiOx, etc.) over the bottom electrode. At least one portion of the layer of CMO is configured to act as a memory element without etching, and performing ion implantation on portions of the layer(s) of CMO to create insulating metal oxide (IMO) regions in the layer(s) of CMO. The IMO regions are positioned adjacent to electrically conductive CMO regions in the un-etched layer(s) of CMO and the electrically conductive CMO regions are disposed above and in contact with the bottom electrode and form memory elements operative to store non-volatile data as a plurality of conductivity profiles (e.g., resistive states indicative of stored data).

    Abstract translation: 公开了使用离子注入隔离的导电金属氧化物的存储单元形成，包括在未蚀刻的导电金属氧化物层之下形成底部电极，形成未蚀刻的导电金属氧化物层，包括沉积至少一层 导电金属氧化物（CMO）材料（例如PrCaMnOx，LaSrCoOx，LaNiOx等）。 CMO层的至少一部分被配置为用作存储元件而不进行蚀刻，并且在CMO的层的部分上执行离子注入以在层的一个或多个层中形成绝缘金属氧化物（IMO）区域 CMO。 IMO区域定位在CMO的未蚀刻层中的导电CMO区域附近，并且导电CMO区域设置在底部电极的上方并与底部电极接触并形成用于存储非易失性数据的存储元件 多个电导率分布（例如，表示存储的数据的电阻状态）。

    Multiple modes of operation in a cross point array
    10.
    发明授权
    Multiple modes of operation in a cross point array 有权
    交叉点阵列中的多种操作模式

    公开(公告)号：US06909632B2

    公开(公告)日：2005-06-21

    申请号：US10921037

    申请日：2004-08-17

    Applicant: Darrell Rinerson ,  Christophe J. Chevallier ,  Steven W. Longcor ,  Edmond R. Ward ,  Wayne Kinney ,  Steve Kuo-Ren Hsia

    Inventor： Darrell Rinerson ,  Christophe J. Chevallier ,  Steven W. Longcor ,  Edmond R. Ward ,  Wayne Kinney ,  Steve Kuo-Ren Hsia

    IPC: G11C11/56 ,  G11C13/00 ,  G11C11/00

    CPC classification number: G11C13/0007 ,  G11C11/5685 ,  G11C2213/31 ,  G11C2213/77

    Abstract: Multiple modes of operation in a cross point array. The invention is a cross point array that uses a read voltage across a conductive array line pair during a read mode. The read voltage produces a read current that is indicative of a first program state when the read current is at a first level and indicative of a second program state when the read current is at a second level. The read current is ineffective to produce a change in program state. A first voltage pulse is used during a first write mode if a change from a second program state to a first program state is desired. A second voltage pulse is used during a second write mode if a change from the first program state to the second program state is desired.

    Abstract translation: 交叉点阵列中的多种操作模式。 本发明是在读取模式期间使用导电阵列线对上的读取电压的交叉点阵列。 当读取电流处于第一电平并且当读取电流处于第二电平时，读取电压产生指示第一编程状态的读取电流，并且指示第二编程状态。 读取电流无效，导致程序状态的变化。 如果希望从第二编程状态改变到第一编程状态，则在第一写入模式期间使用第一电压脉冲。 如果希望从第一编程状态改变到第二编程状态，则在第二写入模式期间使用第二电压脉冲。

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