公开(公告)号：US5569398A

公开(公告)日：1996-10-29

申请号：US343779

申请日：1994-11-22

申请人： Yunlong Sun ,  Ed Swenson

发明人： Yunlong Sun ,  Ed Swenson

IPC分类号： H01L27/04 ,  B23K26/00 ,  B23K26/06 ,  B23K26/36 ,  H01L21/768 ,  H01L21/82 ,  H01L21/822 ,  H01S3/0915 ,  H01S3/13 ,  H01S3/16

CPC分类号： B23K26/06 ,  B23K26/0643 ,  B23K26/351 ,  B23K26/362 ,  B23K26/40 ,  H01L21/76894 ,  B23K2201/34 ,  B23K2203/08 ,  B23K2203/10 ,  B23K2203/12 ,  B23K2203/14 ,  B23K2203/172 ,  B23K2203/26 ,  B23K2203/50 ,  H01S3/025 ,  H01S3/0401 ,  H01S3/09415 ,  H01S3/11 ,  H01S3/1611 ,  H01S3/1653 ,  Y10S438/94

摘要： A laser system and processing method exploits the absorption contrast between the materials from which a film and an underlying substrate (26) are made to effectively remove the film from the substrate. Laser output in a wavelength range of 1.2 to 3 .mu.m optimizes the absorption contrast between many resistive or conductive film materials (e.g., metals, metal alloys, polysilicon, polycides, or disilicides) and integrated circuit substrates (e.g., silicon, gallium arsenide, or other semi-conductors) and permits the use of laser output in a wider range of energy or power levels and pulse widths, without risking damage to the substrates or adjacent circuit structures. Existing film processing laser systems can be readily modified to operate in the 1.2 to 3 .mu.m range. The laser system and processing method also exploit a wavelength range in which devices, including any semiconductor material-based devices affected by conventional laser wavelengths and devices having light-sensitive or photo-electronic portions integrated into their circuits, can be effectively functionally trimmed without inducing malfunctions or function shifts in the processed devices, thus allowing faster functional laser processing, easing geometric restrictions on circuit design, and facilitating production of denser and smaller devices.

摘要翻译： 激光系统和处理方法利用材料之间的吸收对比度，其中膜和下面的基底（26）被制成以有效地从基底去除膜。 在1.2至3微米的波长范围内的激光输出优化了许多电阻或导电膜材料（例如金属，金属合金，多晶硅，多硅化物或二硅化物）和集成电路基板（例如硅，砷化镓， 或其他半导体），并且允许在更宽的能量或功率水平和脉冲宽度范围内使用激光输出，而不会损坏基板或相邻电路结构。 现有的胶片处理激光系统可以容易地修改为在1.2到3μm的范围内操作。 激光系统和处理方法还利用了波长范围，其中包括受传统激光波长影响的任何基于半导体材料的器件和具有集成到其电路中的光敏或光电子部分的器件的器件可以被有效地功能地修整而不诱导 处理的设备中的故障或功能偏移，因此允许更快的功能激光处理，减轻对电路设计的几何限制，并促进生产更致密和更小的设备。

公开(公告)号：US20110160961A1

公开(公告)日：2011-06-30

申请号：US12649023

申请日：2009-12-29

申请人： NYLE WOLLENHAUPT ,  ED SWENSON

发明人： NYLE WOLLENHAUPT ,  ED SWENSON

IPC分类号： G01C21/00 ,  B62D6/00 ,  G01S19/14

CPC分类号： A01B69/008 ,  A01D41/1278

摘要： Wayline generation using a worked edge may be provided. A field boundary line and first work implement width may be received. A first wayline may then be calculated according to a distance from the field boundary line comprising the width of the first work implement. The first wayline may be provided to another machine and a width of the other machine's work implement may be received. A second wayline may then be calculated according to a distance from the first wayline comprising the width of the second machine's work implement.

摘要翻译： 可以提供使用加工边缘的航线生成。 可以接收场边界线和第一工作实体宽度。 然后可以根据与包括第一工作工具的宽度的场边界线的距离来计算第一行线。 可以将第一条线路提供给另一机器，并且可以接收另一机器的作业工具的宽度。 然后可以根据与包括第二机器的作业工具的宽度的第一路线的距离来计算第二路线。