摘要:
A plasma process uniformity control apparatus comprises a plasma chamber defined by chamber walls and a plurality of magnetic elements disposed on the outside of the chamber walls. Each of the plurality of magnets is configured to supply a magnetic field directed at respective portions of the plasma inside the chamber to control the uniformity of the plasma directed toward the target substrate.
摘要:
A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the substrate and generating a plasma in the process chamber having a plasma sheath adjacent to the first side of the substrate. The method may further comprise modifying a shape of a boundary between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the substrate facing the plasma, wherein ions from the plasma impinge on the patterned resist features over a wide angular range during a first exposure.
摘要:
A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulting modifier is configured to control a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. Controlling the shape of the boundary between the plasma and the plasma sheath enables a large range of incident angles of particles striking the workpiece to be achieved.
摘要:
A method for treating a workpiece. The method includes directing a first ion beam to a first region of a workpiece, wherein the first ion beam has a first ion angular profile of first ions extracted through an aperture of an extraction plate. The method also includes directing a second ion beam to the first region of the workpiece, wherein the second ion beam has a second ion angular profile different than the first ion profile of second ions extracted through the aperture of the extraction plate.
摘要:
An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator. The plasma sheath modulator is configured to control a shape of a boundary between plasma and a plasma sheath proximate the extraction aperture. The plasma sheath modulator may include a pair of insulators positioned in the arc chamber and spaced apart by a gap positioned proximate the extraction aperture. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.
摘要:
A clamp assembly for mounting a tonneau cover on a motor vehicle having a cargo area defined by first and second side walls, an end wall and a tailgate, the side walls having an inner panel and an outer panel includes a fastener, a first coupler plate and a bracket. The first coupler plate has a first end and a second end. The first coupler plate is articulable from an operable position to a disengaged position. The bracket has a generally horizontal rail and a vertical rail. The bracket is adapted for contacting the outer panel of the first side wall and further has a seat pivotally retaining the first end of the first coupler plate. The second end of the first coupler plate is adapted for engaging the inner panel of the first side wall defining a first restraining area between the horizontal rail and the second end of the first coupler plate. A second restraining area between the vertical rail and the second end of the first coupler plate is also defined. The fastener detachably interconnects the first coupler plate and the bracket when the first coupler plate is in the operable position.
摘要:
A connector is provided which includes first and second insulative housings each of which includes first and second contacts, respectively, which may be electrically and mechanically connected and disconnected, in a connected mode and disconnected mode, respectively. The first insulative housing includes shorting bars which are spring biased into contact with the first contacts in the disconnected mode. The second insulative housing includes engagement posts which engage the shorting bars in a connected mode to disengage the shorting bars from the first contacts. An improved manner of mounting the shorting bars in the first insulative housing from the rear of such housing is provided. Each shorting bar is firmly held in place by the mating of a housing keeper within the first insulative housing and shorting bar latches.