PLASMA ION PROCESS UNIFORMITY MONITOR
    2.
    发明申请
    PLASMA ION PROCESS UNIFORMITY MONITOR 审中-公开
    等离子体过程均匀监测

    公开(公告)号:US20100159120A1

    公开(公告)日:2010-06-24

    申请号:US12341574

    申请日:2008-12-22

    IPC分类号: C23C14/48 B05C11/00

    CPC分类号: H01J37/32935

    摘要: An ion uniformity monitoring device is positioned within a plasma process chamber and includes a plurality of sensors located above and a distance away from a workpiece within the chamber. The sensors are configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma process. Each sensor outputs a current signal proportional to the detected secondary electrons. A current comparator circuit outputs a processed signal resulting from each of the plurality of current signals. The detection of the secondary electrons emitted from the workpiece during plasma processing is indicative of the uniformity characteristic across the surface of the workpiece and may be performed in situ and during on-line plasma processing.

    摘要翻译: 离子均匀性监测装置位于等离子体处理室内,并且包括位于室内的工件上方并远离工件的多个传感器。 传感器被配置为检测从暴露于等离子体处理的工件的表面发射的二次电子的数量。 每个传感器输出与检测到的二次电子成比例的电流信号。 电流比较器电路输出由多个电流信号中的每一个产生的经处理的信号。 在等离子体处理期间从工件发射的二次电子的检测表示跨工件表面的均匀性特征,并且可以在原位和在线等离子体处理期间进行。

    Scan pattern for an ion implanter
    3.
    发明授权
    Scan pattern for an ion implanter 有权
    离子注入机的扫描图案

    公开(公告)号:US07498590B2

    公开(公告)日:2009-03-03

    申请号:US11473860

    申请日:2006-06-23

    摘要: An ion implanter includes an ion beam generator configured to generate an ion beam and direct the ion beam towards a workpiece, wherein relative motion between the ion beam and the workpiece produces a scan pattern on a front surface of said workpiece. The scan pattern has an oscillating pattern on at least a portion of said front surface of said workpiece.

    摘要翻译: 离子注入机包括被配置为产生离子束并将离子束朝向工件引导的离子束发生器,其中离子束和工件之间的相对运动在所述工件的前表面上产生扫描图案。 扫描图案在所述工件的所述前表面的至少一部分上具有振荡图案。

    Ion beam implant current, spot width and position tuning
    5.
    发明授权
    Ion beam implant current, spot width and position tuning 有权
    离子束注入电流,光斑宽度和位置调整

    公开(公告)号:US07442944B2

    公开(公告)日:2008-10-28

    申请号:US10960904

    申请日:2004-10-07

    IPC分类号: H01J37/317

    摘要: An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.

    摘要翻译: 公开了用于调整离子注入机系统的离子束调谐方法,系统和程序产品。 本发明通过例如扫描离子束通过植入室内的轮廓仪获得离子束的离子束轮廓; 并调整离子注入系统,以根据离子束轮廓最大化估计的注入电流,以同时优化总离子束电流和离子束斑点宽度,并最大化注入电流。 此外,调谐还可以基于点光束中心的反馈沿着期望的离子束路径定位离子束,其通过减少离子束建立时间改善离子注入系统的生产率和性能,并为每个离子提供可重复的射束角度性能 横跨许多设置。

    Scan pattern for an ion implanter
    7.
    发明申请
    Scan pattern for an ion implanter 有权
    离子注入机的扫描图案

    公开(公告)号:US20080073575A1

    公开(公告)日:2008-03-27

    申请号:US11473860

    申请日:2006-06-23

    IPC分类号: H01J37/08

    摘要: An ion implanter includes an ion beam generator configured to generate an ion beam and direct the ion beam towards a workpiece, wherein relative motion between the ion beam and the workpiece produces a scan pattern on a front surface of said workpiece. The scan pattern has an oscillating pattern on at least a portion of said front surface of said workpiece.

    摘要翻译: 离子注入机包括被配置为产生离子束并将离子束朝向工件引导的离子束发生器,其中离子束和工件之间的相对运动在所述工件的前表面上产生扫描图案。 扫描图案在所述工件的所述前表面的至少一部分上具有振荡图案。

    Techniques for ion beam current measurement using a scanning beam current transformer
    8.
    发明授权
    Techniques for ion beam current measurement using a scanning beam current transformer 有权
    使用扫描光束电流互感器进行离子束电流测量的技术

    公开(公告)号:US07652270B2

    公开(公告)日:2010-01-26

    申请号:US11758236

    申请日:2007-06-05

    IPC分类号: G21G5/00 G03F7/20

    摘要: Techniques for ion beam current measurement using a scanning beam current transformer are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion beam current measurement using a transformer. The apparatus may comprise a measurement device positioned adjacent a wafer and an ion dose control module coupled to the measurement device. The measurement device may comprise a transformer through which an ion beam passes onto the wafer. The ion dose control module may calculate ion beam current passing through the transformer and adjust dose based at least in part upon the calculated ion beam current.

    摘要翻译: 公开了使用扫描束电流互感器的离子束电流测量技术。 在一个特定的示例性实施例中,这些技术可以被实现为使用变压器进行离子束电流测量的装置。 该装置可以包括邻近晶片定位的测量装置和耦合到测量装置的离子剂量控制模块。 测量装置可以包括离子束通过该变压器通过晶片。 离子剂量控制模块可以计算通过变压器的离子束电流,并且至少部分地基于所计算的离子束电流来调节剂量。

    TECHNIQUES FOR ION BEAM CURRENT MEASUREMENT USING A SCANNING BEAM CURRENT TRANSFORMER
    9.
    发明申请
    TECHNIQUES FOR ION BEAM CURRENT MEASUREMENT USING A SCANNING BEAM CURRENT TRANSFORMER 有权
    使用扫描光束电流互感器进行离子束电流测量的技术

    公开(公告)号:US20080302955A1

    公开(公告)日:2008-12-11

    申请号:US11758236

    申请日:2007-06-05

    IPC分类号: G21K5/00

    摘要: Techniques for ion beam current measurement using a scanning beam current transformer are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion beam current measurement using a transformer. The apparatus may comprise a measurement device positioned adjacent a wafer and an ion dose control module coupled to the measurement device. The measurement device may comprise a transformer through which an ion beam passes onto the wafer. The ion dose control module may calculate ion beam current passing through the transformer and adjust dose based at least in part upon the calculated ion beam current.

    摘要翻译: 公开了使用扫描束电流互感器的离子束电流测量技术。 在一个特定的示例性实施例中,这些技术可以被实现为使用变压器进行离子束电流测量的装置。 该装置可以包括邻近晶片定位的测量装置和耦合到测量装置的离子剂量控制模块。 测量装置可以包括变压器,离子束通过该变压器通过晶片。 离子剂量控制模块可以计算通过变压器的离子束电流,并且至少部分地基于所计算的离子束电流来调节剂量。

    Faraday system integrity determination
    10.
    发明授权
    Faraday system integrity determination 有权
    法拉第系统完整性确定

    公开(公告)号:US07383141B2

    公开(公告)日:2008-06-03

    申请号:US11264312

    申请日:2005-11-01

    IPC分类号: G01R27/00 G06F19/00

    摘要: A system, method and program product for determining the integrity of a faraday system are disclosed. The invention uses a computer infrastructure to control an automatic determination of a faraday system integrity, when the faraday system is not in operation. The determination is based on the variations on an impedance of the faraday system. An impedance of a faraday system is determined based on the discharge characteristics of a capacitor that discharges through the faraday system.

    摘要翻译: 公开了一种用于确定法拉第系统的完整性的系统,方法和程序产品。 当法拉第系统不运行时,本发明使用计算机基础设施来控制法拉第系统完整性的自动确定。 该确定基于法拉第系统的阻抗的变化。 基于通过法拉第系统放电的电容器的放电特性来确定法拉第系统的阻抗。