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    Substrate support system for reduced autodoping and backside deposition
    4.
    发明申请
    Substrate support system for reduced autodoping and backside deposition 有权
    用于减少自动掺杂和背面沉积的基板支撑系统

    公开(公告)号：US20050193952A1

    公开(公告)日：2005-09-08

    申请号：US11057111

    申请日：2005-02-11

    申请人： Matt Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory Bartlett ,  Joseph Italiano ,  Bob Haro

    发明人： Matt Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory Bartlett ,  Joseph Italiano ,  Bob Haro

    IPC分类号： C23C16/00 ,  C23C16/458 ,  C30B25/12 ,  C30B25/14 ,  H01L21/00 ,  H01L21/687

    CPC分类号： H01L21/68735 ,  H01J37/32871 ,  H01L21/67028

    摘要： A substrate support system comprises a relatively thin circular substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder includes a single substrate support ledge or a plurality of substrate support spacer vanes configured to support a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. The vanes can be angled to resist backside deposition of reactant gases as the substrate holder is rotated. A hollow support member provides support to an underside of the substrate holder. The hollow support member is configured to convey gas (e.g., inert gas or cleaning gas) upward into one or more of the passages of the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment of the invention, the gas in the gap can then flow either (1) outward and upward around the substrate edge or (2) downward through passages of the substrate holder, if any, that do not lead back into the hollow support member. The gas that flows outward and upward around the substrate edge inhibits backside deposition of reactant gases above the substrate. The gas that flows downward through the passages that do not lead back to the support member advantageously inhibits autodoping by sweeping out-diffused dopant atoms away from the substrate front side. In one embodiment, the support member comprises a hollow multi-armed support spider that conveys gas into selected ones of the passages. In another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all of the passages. In yet another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all but one or more of the passages.

    摘要翻译： 衬底支撑系统包括相对薄的圆形衬底保持器，其具有在其顶表面和底表面之间延伸的多个通道。 衬底保持器包括单个衬底支撑凸缘或多个衬底支撑间隔器叶片，其构造成支撑衬底背面的周边部分，使得在衬底和衬底保持器之间形成薄的间隙。 当基板保持器旋转时，叶片可以成角度以抵抗反应气体的背面沉积。 中空的支撑构件为衬底保持器的下侧提供支撑。 中空支撑构件被构造成将气体（例如，惰性气体或清洁气体）向上输送到衬底保持器的一个或多个通道中。 向上输送的气体流入基板和基板支架之间的间隙。 根据本发明的实施例，间隙中的气体然后可以（1）围绕衬底边缘向外和向上流动，或者（2）向下通过衬底保持器的通道（如果有的话），其不会引导回到空心 支持会员 在衬底边缘周围向外和向上流动的气体阻止在衬底上方的反应物气体的背面沉积。 通过通道向下流动的气体不会返回到支撑构件，有利地通过从扩散的掺杂​​剂原子远离衬底正面来扫除自发掺杂。 在一个实施例中，支撑构件包括将气体输送到选定的通道中的中空多臂支撑蜘蛛。 在另一个实施例中，支撑构件包括将气体向上输送到所有通道中的碗形或杯状结构。 在另一个实施例中，支撑构件包括碗形或杯状结构，其将气体向上输送到除了一个或多个通道中的所有通道中。

    THERMOCOUPLE
    5.
    发明申请
    THERMOCOUPLE 有权
    热电偶

    公开(公告)号：US20120310440A1

    公开(公告)日：2012-12-06

    申请号：US13563274

    申请日：2012-07-31

    申请人： Buz Darabnia ,  Andy Yednak ,  Mike Halpin ,  Loren Jacobs ,  Ravinder Aggarwal

    发明人： Buz Darabnia ,  Andy Yednak ,  Mike Halpin ,  Loren Jacobs ,  Ravinder Aggarwal

    IPC分类号： G05D23/22 ,  G01K7/02

    CPC分类号： G01K7/04 ,  C23C16/46 ,  G01K13/00

    摘要： A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.

    摘要翻译： 描述了用于半导体加工反应的热电偶。 热电偶包括具有测量尖端和在相对端的开口的护套。 接收第一线和第二线的一部分的支撑构件被容纳在护套内。 第一和第二线形成在测量尖端处接触鞘的内表面的接合点。 间隔构件固定在护套的开口处并接收支撑构件。 间隔构件允许支撑构件，第一线和第二线自由地相对于彼此热膨胀而不在其中引入压缩或拉伸应力。

    THERMOCOUPLE
    6.
    发明申请
    THERMOCOUPLE 有权
    热电偶

    公开(公告)号：US20100145547A1

    公开(公告)日：2010-06-10

    申请号：US12330096

    申请日：2008-12-08

    申请人： Buz Darabnia ,  Andy Yednak ,  Mike Halpin ,  Loren Jacobs ,  Ravinder Aggarwal

    发明人： Buz Darabnia ,  Andy Yednak ,  Mike Halpin ,  Loren Jacobs ,  Ravinder Aggarwal

    IPC分类号： G05D23/00 ,  G01K7/02

    CPC分类号： G01K7/04 ,  C23C16/46 ,  G01K13/00

    摘要： A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.

    摘要翻译： 描述了用于半导体加工反应的热电偶。 热电偶包括具有测量尖端和在相对端的开口的护套。 接收第一线和第二线的一部分的支撑构件被容纳在护套内。 第一和第二线形成在测量尖端处接触鞘的内表面的接合点。 间隔构件固定在护套的开口处并接收支撑构件。 间隔构件允许支撑构件，第一线和第二线自由地相对于彼此热膨胀而不在其中引入压缩或拉伸应力。

    Thermocouple
    7.
    发明授权
    Thermocouple 有权
    热电偶

    公开(公告)号：US08616765B2

    公开(公告)日：2013-12-31

    申请号：US13563274

    申请日：2012-07-31

    申请人： Buz Darabnia ,  Andy Yednak ,  Mike Halpin ,  Loren Jacobs ,  Ravinder Aggarwal

    发明人： Buz Darabnia ,  Andy Yednak ,  Mike Halpin ,  Loren Jacobs ,  Ravinder Aggarwal

    IPC分类号： G05D23/00 ,  G01K7/02

    CPC分类号： G01K7/04 ,  C23C16/46 ,  G01K13/00

    摘要： A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.

    摘要翻译： 描述了用于半导体加工反应的热电偶。 热电偶包括具有测量尖端和在相对端的开口的护套。 接收第一线和第二线的一部分的支撑构件被容纳在护套内。 第一和第二线形成在测量尖端处接触鞘的内表面的接合点。 间隔构件固定在护套的开口处并接收支撑构件。 间隔构件允许支撑构件，第一线和第二线自由地相对于彼此热膨胀而不在其中引入压缩或拉伸应力。

    Thermocouple
    8.
    发明授权
    Thermocouple 有权
    热电偶

    公开(公告)号：US08262287B2

    公开(公告)日：2012-09-11

    申请号：US12330096

    申请日：2008-12-08

    申请人： Buz Darabnia ,  Andy Yednak ,  Mike Halpin ,  Loren Jacobs ,  Ravinder Aggarwal

    发明人： Buz Darabnia ,  Andy Yednak ,  Mike Halpin ,  Loren Jacobs ,  Ravinder Aggarwal

    IPC分类号： G05D23/00 ,  G01K7/02

    CPC分类号： G01K7/04 ,  C23C16/46 ,  G01K13/00

    摘要： A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.

    摘要翻译： 描述了用于半导体加工反应的热电偶。 热电偶包括具有测量尖端和在相对端的开口的护套。 接收第一线和第二线的一部分的支撑构件被容纳在护套内。 第一和第二线形成在测量尖端处接触鞘的内表面的接合点。 间隔构件固定在护套的开口处并接收支撑构件。 间隔构件允许支撑构件，第一线和第二线自由地相对于彼此热膨胀而不在其中引入压缩或拉伸应力。

    SUBSTRATE HOLDER WITH VARYING DENSITY
    9.
    发明申请
    SUBSTRATE HOLDER WITH VARYING DENSITY 审中-公开
    具有不同密度的基座

    公开(公告)号：US20100107974A1

    公开(公告)日：2010-05-06

    申请号：US12266317

    申请日：2008-11-06

    申请人： Michael Givens ,  Mike Halpin ,  Matthew G. Goodman ,  Keir Kosco

    发明人： Michael Givens ,  Mike Halpin ,  Matthew G. Goodman ,  Keir Kosco

    IPC分类号： B05C13/02

    CPC分类号： H01L21/68735 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/68785

    摘要： A substrate support system comprises a substrate holder for supporting a substrate. The substrate holder comprises an interior portion sized and shaped to extend beneath most or all of a substrate supported on the substrate holder. The substrate holder has mass density that varies, preferably in order to compensate for variations in substrate temperature owing to surface geometry variations of the interior portion, so as to provide a more uniform thermal coupling between the substrate and substrate holder. The substrate holder is preferably configured to be spaced further apart from a substrate at the center than at the outer perimeter.

    摘要翻译： 衬底支撑系统包括用于支撑衬底的衬底支架。 衬底保持器包括尺寸和形状以在支撑在衬底保持器上的基底的大部分或全部下延伸的内部部分。 衬底保持器具有变化的质量密度，优选地为了补偿由于内部部分的表面几何形状变化引起的衬底温度的变化，从而在衬底和衬底保持器之间提供更均匀的热耦合。 衬底保持器优选地构造成在中心处比在外周距离衬底更远地分开。

    Pulsed valve manifold for atomic layer deposition
    10.
    发明授权
    Pulsed valve manifold for atomic layer deposition 有权
    用于原子层沉积的脉冲阀歧管

    公开(公告)号：US09574268B1

    公开(公告)日：2017-02-21

    申请号：US13284738

    申请日：2011-10-28

    申请人： Todd Dunn ,  Carl White ,  Mike Halpin ,  Eric Shero ,  Herbert Terhorst ,  Jerry Winkler

    发明人： Todd Dunn ,  Carl White ,  Mike Halpin ,  Eric Shero ,  Herbert Terhorst ,  Jerry Winkler

    IPC分类号： C23C16/455 ,  C23C16/453

    CPC分类号： C23C16/45544 ,  C23C16/455 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/45589 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/28556

    摘要： A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.

    摘要翻译： 气相沉积装置包括反应器，该反应器包括反应室和用于将蒸汽注入反应室的喷射器。 该装置还包括用于将蒸气输送到喷射器的歧管。 歧管包括具有内孔的歧管主体，在与所述孔的纵向轴线相交的平面内设置在所述主体内的第一分配通道，以及设置在所述主体内并与所述第一分配通道流动连通的多个供应通道，以及 与孔。 每个第一供应通道相对于孔的纵向轴线以锐角设置，并且每个供应通道在与纵向轴线不同的角度位置处与孔连通。 分配通道（因此，供应通道）可以与常见的反应物源连接。 还描述了相关的沉积方法。