公开(公告)号：US09328413B2

公开(公告)日：2016-05-03

申请号：US13580240

申请日：2011-08-05

Applicant: Shujie Tang ,  Guqiao Ding ,  Xiaoming Xie ,  Ji Chen ,  Chen Wang ,  Mianheng Jiang

Inventor： Shujie Tang ,  Guqiao Ding ,  Xiaoming Xie ,  Ji Chen ,  Chen Wang ,  Mianheng Jiang

IPC: C23C16/26 ,  B05D3/00 ,  C23C16/02 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/04

CPC classification number: C23C16/0218 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B32/186 ,  C01B2204/06 ,  C23C16/0272 ,  C23C16/26 ,  Y10T428/2918

Abstract: A method for growing a graphene nanoribbon on an insulating substrate having a cleavage plane with atomic level flatness is provided, and belongs to the field of low-dimensional materials and new materials. The method includes the following steps. Step 1: Cleave an insulating substrate to obtain a cleavage plane with atomic level flatness, and prepare a single atomic layer step. Step 2: Directly grow a graphene nanoribbon on the insulating substrate having regular single atomic steps. In the method, a characteristic that nucleation energy of graphene on the atomic step is different from that on the flat cleavage plane is used, and conditions, such as the temperature, intensity of pressure and supersaturation degree of activated carbon atoms, are adjusted, so that the graphene grows only along a step edge into a graphene nanoribbon of an adjustable size. The method is mainly applied to the field of new-type graphene optoelectronic devices.

Abstract translation: 提供了在具有原子级平坦度的解理面的绝缘基板上生长石墨烯纳米棒的方法，属于低维材料和新材料领域。 该方法包括以下步骤。 步骤1：切割绝缘基板以获得具有原子级平面度的解理面，并制备单个原子层步骤。 步骤2：在具有规则单原子台阶的绝缘基板上直接生长石墨烯纳米纤维。 在该方法中，使用原子台阶上的石墨烯的成核能与平坦解理面不同的特征，调节活性碳原子的温度，压力强度和过饱和度等条件，因此 石墨烯仅沿着台阶边缘生长成可调节尺寸的石墨烯纳米棒。 该方法主要应用于新型石墨烯光电器件领域。

公开(公告)号：US20150292110A1

公开(公告)日：2015-10-15

申请号：US14396519

申请日：2012-07-03

Applicant: Shumin Wang ,  Qian Gong ,  Xiaoming Xie ,  Hailong Wang ,  Zengfeng Di ,  Guqiao Ding ,  Qingbo Liu

Inventor： Shumin Wang ,  Qian Gong ,  Xiaoming Xie ,  Hailong Wang ,  Zengfeng Di ,  Guqiao Ding ,  Qingbo Liu

IPC: C30B25/10 ,  C01B31/04 ,  C30B29/02

CPC classification number: C23C16/26 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B32/188

Abstract: The invention belongs to the technical field of inorganic compounds, and particularly, relates to a method for directly preparing graphene by taking CBr4 as a source material and using methods such as molecular-beam epitaxy (MBE) or chemical vapor deposition (CVD). A method for preparing graphene comprises the following steps: selecting a proper material as a substrate; directly depositing a catalyst and CBr4 on a surface of the substrate; and performing annealing treatment on the sample obtained through deposition. Compared with other technologies, an innovative point of the method in the invention is that the catalyst and CBr4 source can be quantitatively and controllably deposited on any substrate, and the catalyst and CBr4 source react on the surface of the substrate to form the graphene, so that the dependence of the graphene growth on a substrate material can be reduced to a great extent, and different substrate materials can be selected according to different application backgrounds.

Abstract translation: 本发明属于无机化合物的技术领域，特别涉及通过以CBr4作为源材料并使用分子束外延（MBE）或化学气相沉积（CVD）等方法直接制备石墨烯的方法。 制备石墨烯的方法包括以下步骤：选择合适的材料作为基材; 将催化剂和CBr 4直接沉积在基材的表面上; 对通过沉积获得的样品进行退火处理。 与其他技术相比，本发明方法的创新点是催化剂和CBr4源可以定量和可控地沉积在任何基材上，催化剂和CBr4源在基材表面上反应形成石墨烯，因此 石墨烯生长对衬底材料的依赖性可以在很大程度上降低，并且可以根据不同的应用背景来选择不同的衬底材料。

公开(公告)号：US20130022813A1

公开(公告)日：2013-01-24

申请号：US13580240

申请日：2011-08-05

Applicant: Shujie Tang ,  Guqiao Ding ,  Xiaoming Xie ,  Ji Chen ,  Chen Wang ,  Mianheng Jiang

Inventor： Shujie Tang ,  Guqiao Ding ,  Xiaoming Xie ,  Ji Chen ,  Chen Wang ,  Mianheng Jiang

IPC: C23C16/26 ,  B05D3/00 ,  C23C16/50 ,  B32B9/00 ,  C01B31/00 ,  B05D3/02 ,  B82Y40/00 ,  B82Y30/00

CPC classification number: C23C16/0218 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B32/186 ,  C01B2204/06 ,  C23C16/0272 ,  C23C16/26 ,  Y10T428/2918

Abstract: A method for growing a graphene nanoribbon on an insulating substrate having a cleavage plane with atomic level flatness is provided, and belongs to the field of low-dimensional materials and new materials. The method includes the following steps. Step 1: Cleave an insulating substrate to obtain a cleavage plane with atomic level flatness, and prepare a single atomic layer step. Step 2: Directly grow a graphene nanoribbon on the insulating substrate having regular single atomic steps. In the method, a characteristic that nucleation energy of graphene on the atomic step is different from that on the flat cleavage plane is used, and conditions, such as the temperature, intensity of pressure and supersaturation degree of activated carbon atoms, are adjusted, so that the graphene grows only along a step edge into a graphene nanoribbon of an adjustable size. The method is mainly applied to the field of new-type graphene optoelectronic devices.

Abstract translation: 提供了在具有原子级平坦度的解理面的绝缘基板上生长石墨烯纳米棒的方法，属于低维材料和新材料领域。 该方法包括以下步骤。 步骤1：切割绝缘基板以获得具有原子级平面度的解理面，并制备单个原子层步骤。 步骤2：在具有规则单原子台阶的绝缘基板上直接生长石墨烯纳米纤维。 在该方法中，使用原子台阶上的石墨烯的成核能与平坦解理面不同的特征，调节活性碳原子的温度，压力强度和过饱和度等条件，因此 石墨烯仅沿着台阶边缘生长成可调节尺寸的石墨烯纳米棒。 该方法主要应用于新型石墨烯光电器件领域。

公开(公告)号：US09850571B2

公开(公告)日：2017-12-26

申请号：US14396519

申请日：2012-07-03

Applicant: Shumin Wang ,  Qian Gong ,  Xiaoming Xie ,  Hailong Wang ,  Zengfeng Di ,  Guqiao Ding ,  Qingbo Liu

Inventor： Shumin Wang ,  Qian Gong ,  Xiaoming Xie ,  Hailong Wang ,  Zengfeng Di ,  Guqiao Ding ,  Qingbo Liu

IPC: C23C16/26 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B32/188

CPC classification number: C23C16/26 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B32/188

Abstract: The invention belongs to the technical field of inorganic compounds, and particularly, relates to a method for directly preparing graphene by taking CBr4 as a source material and using methods such as molecular-beam epitaxy (MBE) or chemical vapor deposition (CVD). A method for preparing graphene comprises the following steps: selecting a proper material as a substrate; directly depositing a catalyst and CBr4 on a surface of the substrate; and performing annealing treatment on the sample obtained through deposition. Compared with other technologies, an innovative point of the method in the invention is that the catalyst and CBr4 source can be quantitatively and controllably deposited on any substrate, and the catalyst and CBr4 source react on the surface of the substrate to form the graphene, so that the dependence of the graphene growth on a substrate material can be reduced to a great extent, and different substrate materials can be selected according to different application backgrounds.

公开(公告)号：US20130078424A1

公开(公告)日：2013-03-28

申请号：US13580267

申请日：2011-08-05

Applicant: Guqiao Ding ,  Shujie Tang ,  Xiaoming Xie ,  Mianheng Jiang

Inventor： Guqiao Ding ,  Shujie Tang ,  Xiaoming Xie ,  Mianheng Jiang

IPC: C23C16/02

CPC classification number: C23C16/0254 ,  B82Y30/00 ,  C04B41/0072 ,  C04B41/009 ,  C04B41/80 ,  C04B2111/00844 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02658 ,  Y10T428/24355 ,  C04B41/4519 ,  C04B35/5831

Abstract: The present invention provides a hexagonal boron nitride (hBN) substrate with a monatomic layer step and a preparation method thereof, where a surface of the hBN substrate is cleaved to obtain a fresh cleavage plane, and then hBN is etched by using hydrogen at a high temperature to obtain a controllable and regular monatomic layer step. The present invention utilizes an anisotropic etching effect of hydrogen on the hBN and controls an etching rate and degree of the etching by adjusting a hydrogen proportion, the annealing temperature, and the annealing time, so as to achieve the objective of etching the regular monatomic layer step. The preparation process is compatible with the process of preparing graphene through a chemical vapor deposition (CVD) method, and is applicable to preparation of a graphene nanoribbon. The present invention is mainly applied to new graphene electronic devices.

Abstract translation: 本发明提供了具有单原子层步骤的六方氮化硼（hBN）衬底及其制备方法，其中hBN衬底的表面被切割以获得新鲜的解理面，然后通过使用高的氢气蚀刻hBN 温度以获得可控和规则的单原子层步骤。 本发明利用氢在HBN上的各向异性蚀刻效应，通过调节氢比例，退火温度和退火时间来控制蚀刻速度和蚀刻程度，以达到蚀刻常规单原子层的目的 步。 制备方法与通过化学气相沉积（CVD）方法制备石墨烯的方法相容，并且可用于制备石墨烯纳米棒。 本发明主要应用于新型石墨烯电子器件。