公开(公告)号：US07480020B2

公开(公告)日：2009-01-20

申请号：US10942683

申请日：2004-09-16

Applicant: Chi-Jain Wen ,  Dai-Liang Ting ,  Gwo-long Lin ,  Shyuan-Jeng Ho ,  I-Wei Wu

Inventor： Chi-Jain Wen ,  Dai-Liang Ting ,  Gwo-long Lin ,  Shyuan-Jeng Ho ,  I-Wei Wu

IPC: G02F1/1335

CPC classification number: G02F1/133555 ,  G02F1/13439

Abstract: A transflective liquid crystal display and method of fabricating the same. The pixel region of the transflective comprises a thin film transistor, a transmissive electrode, and a reflective electrode, wherein the overlap of the reflective electrode and the transparent electrode composes a reflective region and the non-overlapping region of the reflective electrode and the transparent electrode form a transmissive region, and the transparent electrode and the source and the drain regions of the thin film transistor are formed of the same silicon layer.

Abstract translation: 半透射型液晶显示器及其制造方法。 半透反射体的像素区域包括薄膜晶体管，透射电极和反射电极，其中反射电极和透明电极的重叠构成反射区域和反射电极与透明电极的非重叠区域 形成透射区域，并且薄膜晶体管的透明电极和源极和漏极区域由相同的硅层形成。

公开(公告)号：US20050186715A1

公开(公告)日：2005-08-25

申请号：US11040747

申请日：2005-01-24

Applicant: Jr-Hong Chen ,  Gwo-Long Lin ,  Chih-Fang Chen

Inventor： Jr-Hong Chen ,  Gwo-Long Lin ,  Chih-Fang Chen

IPC: G02F1/1368 ,  G02F1/1362 ,  G09F9/30 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/77 ,  H01L21/82 ,  H01L21/84 ,  H01L27/02 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/0248 ,  G02F1/136204 ,  H01L27/1214

Abstract: A method of fabricating an array of structures sensitive to ESD is disclosed. First, an array of structures is provided on a substrate, with the structures conductively coupled by interconnections. Thereafter, the interconnections are removed before fabricating another array of structures. Therefore, the structures have equal potential. Further, an electrostatic discharge structure is provided near the periphery of the substrates.

Abstract translation: 公开了一种制造对ESD敏感的结构阵列的方法。 首先，在衬底上提供一组结构，其结构通过互连导电耦合。 此后，在制造另一个结构阵列之前去除互连。 因此，结构具有相同的潜力。 此外，在基板的周边附近设置静电放电结构。

公开(公告)号：US20050146657A1

公开(公告)日：2005-07-07

申请号：US10907053

申请日：2005-03-18

Applicant: Chi-Jain Wen ,  Dai-Liang Ting ,  Hsiao-Yi Lin ,  Gwo-Long Lin ,  I-Wei Wu

Inventor： Chi-Jain Wen ,  Dai-Liang Ting ,  Hsiao-Yi Lin ,  Gwo-Long Lin ,  I-Wei Wu

IPC: G02F1/1335 ,  G02F1/1362

CPC classification number: G02F1/133555 ,  G02F1/13624

Abstract: A transflective liquid crystal display (LCD) includes at least a transmission pixel region and at least a reflection pixel region positioned in a pixel region. The transmission region includes at least a transmissive electrode connected to a first switching element. The reflection pixel region includes at least a reflective electrode connected to a second switching element. The transmissive and the reflective electrodes are controlled respectively by independent switching elements.

Abstract translation: 半透射型液晶显示器（LCD）至少包括透射像素区域和至少位于像素区域中的反射像素区域。 透射区域至少包括连接到第一开关元件的透射电极。 反射像素区域至少包括连接到第二开关元件的反射电极。 透射和反射电极分别由独立的开关元件控制。

公开(公告)号：US6071762A

公开(公告)日：2000-06-06

申请号：US192453

申请日：1998-11-16

Applicant: Hong-Woei Wu ,  Yeong-E Chen ,  Gwo-Long Lin

Inventor： Hong-Woei Wu ,  Yeong-E Chen ,  Gwo-Long Lin

IPC: H01L21/336 ,  H01L21/00 ,  H01L21/26

CPC classification number: H01L29/66757 ,  H01L29/66765

Abstract: A process for manufacturing a TFT without the use of ion implantation is described. Instead, heavily doped layers of amorphous silicon are used as diffusion sources. Two embodiments of the invention are described. In the first embodiment the gate pedestal is deposited first, followed by gate oxide and an amorphous layer of undoped silicon. This is followed by the layer of heavily doped amorphous silicon which is subjected to a relatively low energy laser scan which drives in a small amount of dopant and converts it to N-. After the N+ layer has been patterned and etched to form source and drain electrodes, a second, higher energy, laser scan is given. This brings the source and drain very close to, but not touching, the channel, resulting in an LDD type of structure. In the second embodiment a layer of intrinsic polysilicon is used for the channel. It is covered with a layer of gate oxide and a metallic gate pedestal. As before, heavily doped N+ amorphous silicon is deposited over this and used as a source of dopant to produce an LDD structure similar to the first embodiment.

Abstract translation: 描述了不使用离子注入制造TFT的工艺。 相反，非掺杂的非晶硅层被用作扩散源。 对本发明的两个实施例进行描述。 在第一实施例中，首先沉积栅极基座，随后是栅极氧化物和非掺杂硅的非晶层。 其后是重掺杂非晶硅层，其经历相对较低能量的激光扫描，其驱动少量掺杂剂并将其转换成N-。 在N +层被图案化和蚀刻以形成源极和漏极之后，给出第二次较高能量的激光扫描。 这使得源极和漏极非常接近但不接触通道，导致LDD型结构。 在第二实施例中，本征多晶硅层用于该通道。 它被一层栅极氧化物和金属栅极基座覆盖。 如前所述，在其上沉积重掺杂的N +非晶硅并用作掺杂剂源以产生类似于第一实施例的LDD结构。

公开(公告)号：US06063653A

公开(公告)日：2000-05-16

申请号：US111279

申请日：1998-07-07

Applicant: Kang-Cheng Lin ,  Gwo-Long Lin

Inventor： Kang-Cheng Lin ,  Gwo-Long Lin

IPC: G03F7/20 ,  H01L21/336 ,  H01L21/84

CPC classification number: G03F7/2022 ,  H01L29/66765

Abstract: The present invention includes patterning a metal layer on a glass substrate. A dielectric layer is formed on the metal layer. An amorphous silicon layer is subsequently formed on the dielectric layer. A first positive photoresist is formed on the amorphous silicon layer. Then, a back-side exposure is used by using the gate electrodes as a mask. A bake step is performed to expand the lower portion of the photoresist. Next, a second positive photoresist layer is formed on the amorphous silicon layer and the residual first positive photoresist layer. A further back-side exposure is employed again from the back side of the substrate using the gate electrode as the mask. A second back step is applied to expand the lower portion of the second positive photoresist layer. An ion implantation is performed by using the second positive photoresist as a mask. Next, the substrate is then annealed. Amorphous silicon layer is then patterned. A further dielectric layer for isolation is formed on the patterned amorphous silicon layer. Source and drain are patterned on the dielectric layer to contact with the amorphous silicon layer. Subsequently, a passivation layer is deposited on the source and drain.

Abstract translation: 本发明包括在玻璃基板上图案化金属层。 在金属层上形成电介质层。 随后在电介质层上形成非晶硅层。 在非晶硅层上形成第一正性光致抗蚀剂。 然后，通过使用栅电极作为掩模来使用背面曝光。 进行烘烤步骤以扩展光致抗蚀剂的下部。 接下来，在非晶硅层和残留的第一正性光致抗蚀剂层上形成第二正性光致抗蚀剂层。 使用栅极电极作为掩模，再次从衬底的背面再次进行背面曝光。 应用第二后续步骤来扩展第二正性光致抗蚀剂层的下部。 通过使用第二正性光致抗蚀剂作为掩模来进行离子注入。 接着，将基板退火。 然后将非晶硅层图案化。 在图案化的非晶硅层上形成用于隔离的另外的电介质层。 源极和漏极在电介质层上被图案化以与非晶硅层接触。 随后，钝化层沉积在源极和漏极上。

公开(公告)号：US06924874B2

公开(公告)日：2005-08-02

申请号：US10250122

申请日：2003-06-05

Applicant: Gwo-Long Lin ,  I-Min Lu ,  Chu-Jung Shih ,  Shyuan-Jeng Ho ,  I-Wei Wu

Inventor： Gwo-Long Lin ,  I-Min Lu ,  Chu-Jung Shih ,  Shyuan-Jeng Ho ,  I-Wei Wu

IPC: H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  G02F1/13

CPC classification number: H01L27/1288 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1255 ,  H01L29/78621

Abstract: The present invention provides a method of forming a liquid crystal display (LCD). Active layers of N-type and P-type low temperature polysilicon thin film transistors and a bottom electrode of a storage capacitor are formed first. Then a N-type source/drain is formed and the bottom electrode is doped with dopants. A gate insulator, a gate electrode, a capacitor dielectric, and a top electrode are thereafter formed. After that, a P-type source/drain is formed. Finally, a source interconnect, a drain interconnect, and a pixel electrode of the liquid crystal display are formed.

Abstract translation: 本发明提供一种形成液晶显示器（LCD）的方法。 首先形成N型和P型低温多晶硅薄膜晶体管的有源层和存储电容器的底部电极。 然后形成N型源极/漏极，并且底部电极掺杂有掺杂剂。 此后形成栅极绝缘体，栅极电极，电容器电介质和顶部电极。 之后，形成P型源极/漏极。 最后，形成液晶显示器的源极互连，漏极互连以及像素电极。

公开(公告)号：US07332379B2

公开(公告)日：2008-02-19

申请号：US11040747

申请日：2005-01-21

Applicant: Jr-Hong Chen ,  Gwo-Long Lin ,  Chih-Fang Chen

Inventor： Jr-Hong Chen ,  Gwo-Long Lin ,  Chih-Fang Chen

IPC: H01L21/82

CPC classification number: H01L27/0248 ,  G02F1/136204 ,  H01L27/1214

Abstract: A method of fabricating an array of structures sensitive to ESD is disclosed. First, an array of structures is provided on a substrate, with the structures conductively coupled by interconnections. Thereafter, the interconnections are removed before fabricating another array of structures. Therefore, the structures have equal potential. Further, an electrostatic discharge structure is provided near the periphery of the substrates.

Abstract translation: 公开了一种制造对ESD敏感的结构阵列的方法。 首先，在衬底上提供一组结构，其结构通过互连导电耦合。 此后，在制造另一个结构阵列之前去除互连。 因此，结构具有相同的潜力。 此外，在基板的周边附近设置静电放电结构。

公开(公告)号：US07002652B2

公开(公告)日：2006-02-21

申请号：US10907053

申请日：2005-03-18

Applicant: Chi-Jain Wen ,  Dai-Liang Ting ,  Hsiao-Yi Lin ,  Gwo-Long Lin ,  I-Wei Wu

Inventor： Chi-Jain Wen ,  Dai-Liang Ting ,  Hsiao-Yi Lin ,  Gwo-Long Lin ,  I-Wei Wu

IPC: G02F1/1368 ,  G02F1/1343

CPC classification number: G02F1/133555 ,  G02F1/13624

Abstract: A transflective liquid crystal display (LCD) includes at least a transmission pixel region and at least a reflection pixel region positioned in a pixel region. The transmission region includes at least a transmissive electrode connected to a first switching element. The reflection pixel region includes at least a reflective electrode connected to a second switching element. The transmissive and the reflective electrodes are controlled respectively by independent switching elements.

Abstract translation: 半透射型液晶显示器（LCD）至少包括透射像素区域和至少位于像素区域中的反射像素区域。 透射区域至少包括连接到第一开关元件的透射电极。 反射像素区域至少包括连接到第二开关元件的反射电极。 透射和反射电极分别由独立的开关元件控制。

公开(公告)号：US06731352B2

公开(公告)日：2004-05-04

申请号：US10161301

申请日：2002-06-03

Applicant: Chu-Jung Shih ,  Gwo-Long Lin ,  I-Min Lu ,  I-Wei Wu

Inventor： Chu-Jung Shih ,  Gwo-Long Lin ,  I-Min Lu ,  I-Wei Wu

IPC: G02F1136

CPC classification number: G02F1/136227 ,  G02F2202/104

Abstract: A six mask-steps method for fabricating liquid crystal display is described. A driving area and a pixel area are defined by a first mask step. Gates on the driving/pixel area and upper electrodes of capacitors on the pixel area are defined by a second mask step. Then, using the gates and the upper electrodes as a mask, a source/drain, channel region and lower electrode are formed in the driving/pixel area by an ion-doping process. A second insulation layer is formed and covers the insulation substrate. A plurality of first openings is formed by the third mask step and the gate and the source/drain are exposed. A second conductive layer is formed and covers the second insulation layer and the first opening is filled. Then, the second conductive layer is patterned, and a source/drain line is formed and contacts electrically with the source/drain by the fourth mask step. A dielectric layer is formed and covers the second insulation layer and the second conductive layer; the dielectric layer has a planar surface. A second opening is formed by the fifth mask step and the drain line on the pixel area is exposed. Finally, a pixel electrode is defined by the sixth mask step and contacts electrically with the drain line.

Abstract translation: 描述了用于制造液晶显示器的六个掩模步骤方法。 驱动区域和像素区域由第一掩模步骤限定。 通过第二掩模步骤限定像素区域上的驱动/像素区域和电容器的上部电极。 然后，使用栅极和上部电极作为掩模，通过离子掺杂工艺在驱动/像素区域中形成源极/漏极，沟道区域和下部电极。 形成第二绝缘层并覆盖绝缘基板。 通过第三掩模步骤形成多个第一开口，露出栅极和源极/漏极。 形成第二导电层并覆盖第二绝缘层，并填充第一开口。 然后，对第二导电层进行构图，并且通过第四掩模步骤形成源极/漏极线并与源极/漏极电接触。 形成介电层并覆盖第二绝缘层和第二导电层; 电介质层具有平坦表面。 通过第五掩模步骤形成第二开口，并且暴露像素区域上的漏极线。 最后，像素电极由第六掩模步骤限定，并与漏极线电接触。

公开(公告)号：US07112458B2

公开(公告)日：2006-09-26

申请号：US10605499

申请日：2003-10-02

Applicant: Chu-Jung Shih ,  Gwo-Long Lin ,  I-Min Lu

Inventor： Chu-Jung Shih ,  Gwo-Long Lin ,  I-Min Lu

IPC: H01L21/302

CPC classification number: H01L27/1288 ,  H01L27/1255

Abstract: An active layer of a P-type low temperature polysilicon thin film transistor and a bottom electrode of a storage capacitor are first formed. Then, a P-type source/drain is formed and the bottom electrode is doped with dopants. A gate insulator, a gate electrode, a capacitor dielectric, and a top electrode are thereafter formed. Finally, a source interconnect, a drain interconnect, and a pixel electrode of the liquid crystal display are formed.

Abstract translation: 首先形成P型低温多晶硅薄膜晶体管的有源层和存储电容器的底部电极。 然后，形成P型源极/漏极，并且底部电极掺杂有掺杂剂。 此后形成栅极绝缘体，栅极电极，电容器电介质和顶部电极。 最后，形成液晶显示器的源极互连，漏极互连以及像素电极。