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17 条记录 (耗时 0.013 秒)

    SYSTEM AND METHOD FOR RANDOM MIXED PALLETIZING OF PRODUCTS
    1.
    发明申请
    SYSTEM AND METHOD FOR RANDOM MIXED PALLETIZING OF PRODUCTS 失效
    产品的随机混合制度的系统和方法

    公开(公告)号：US20080046116A1

    公开(公告)日：2008-02-21

    申请号：US11839910

    申请日：2007-08-16

    申请人： Salahuddin Khan ,  Jeffrey Clark ,  Philip Ickes ,  Hans Schuster ,  Mike Shaffer

    发明人： Salahuddin Khan ,  Jeffrey Clark ,  Philip Ickes ,  Hans Schuster ,  Mike Shaffer

    IPC分类号： G06F7/00 ,  G04F5/00 ,  G05B19/00

    CPC分类号： B25J9/1687 ,  G05B2219/40067

    摘要： A system and method of the present invention randomly mixes and palletizes various containers received from a conveyor. A control system received an order in advance to cooperate with an automatic storage and retrieval system to pick the containers, ordered by various customers, and to place them on a second conveyor. A robotic device, such as a robotic arm or a gantry system, selectively picks the containers from the second conveyor and places the containers on a pallet in a mixed fashion. The pallets are delivered to the respective customers.

    摘要翻译： 本发明的系统和方法将从输送机接收的各种容器随机混合并堆垛。 控制系统预先接收订单以与自动存储和检索系统配合以拾取由各种客户订购的容器，并将它们放置在第二输送机上。 机器人装置，例如机器人手臂或龙门架系统，选择性地从第二输送机拾取容器，并将容器以混合的方式放置在托盘上。 托盘交付给相应的客户。

    Process for producing a thin metal structure with a self-supporting frame
    3.
    发明授权
    Process for producing a thin metal structure with a self-supporting frame 失效
    用于生产具有自支撑框架的薄金属结构的方法

    公开(公告)号：US4058432A

    公开(公告)日：1977-11-15

    申请号：US667531

    申请日：1976-03-17

    申请人： Hans Schuster-Woldan ,  Kaspar Weingand ,  Dirk Koch

    发明人： Hans Schuster-Woldan ,  Kaspar Weingand ,  Dirk Koch

    IPC分类号： C23F1/00 ,  C25D1/08 ,  H01L21/312

    CPC分类号： C25D1/08 ,  Y10T29/4962

    摘要： A process for producing a thin metal structure with a self-supporting frame, such as a grid, characterized by forming a galvanic resistant coating on a first surface of a carrier member with the coating exposing portions of the first surface adjacent the end of the carrier member and portions of the first surface in the configuration of the metal structure to be formed, depositing a layer of metal on the exposed portion of the first surface, removing the galvanic resistant coating, applying an etch resistant coating on the edges of thecarrier member and at least a portion of a second surface adjacent the edges of the carrier member and then selectively etching the carrier member to remove the carrier member except for that portion protected by the etch resistant coating to form the thin metal structure mounted on a self-supporting frame. The carrier member may either be a single member or a multi-layer member which has a metal coating forming the first surface. The process when using a multi-layer includes providing a protective layer on the metal structure and etching away the majority of the carrier member and then subsequently etching the metallic layer and protective layer to produce the metal structure on the frame.

    摘要翻译： 一种用于制造具有诸如栅格的自支撑框架的薄金属结构的方法，其特征在于在载体构件的第一表面上形成耐电镀涂层，其中第一表面的涂层暴露部分邻近载体的端部 构件和要形成的金属结构的构造中的第一表面的部分，在第一表面的暴露部分上沉积金属层，去除耐电镀涂层，在载体构件的边缘上施加耐蚀刻涂层，以及 第二表面的至少一部分邻近载体构件的边缘，然后选择性地蚀刻载体构件以去除除了由耐蚀刻涂层保护的部分之外的载体构件，以形成安装在自支撑框架上的薄金属结构 。 载体构件可以是具有形成第一表面的金属涂层的单个构件或多层构件。 当使用多层时的过程包括在金属结构上提供保护层并蚀刻掉大部分载体构件，然后随后蚀刻金属层和保护层以在框架上产生金属结构。

    MRAM memory with drive logic arrangement
    7.
    发明授权
    MRAM memory with drive logic arrangement 有权
    具有驱动逻辑布置的MRAM存储器

    公开(公告)号：US06462980B2

    公开(公告)日：2002-10-08

    申请号：US09832106

    申请日：2001-04-11

    申请人： Hans Schuster-Woldan ,  Siegfried Schwarzl

    发明人： Hans Schuster-Woldan ,  Siegfried Schwarzl

    IPC分类号： G11C1100

    CPC分类号： H01L27/228 ,  G11C11/15 ,  G11C11/16

    摘要： MRAM memory having a memory cell array (2) comprising magnetoresistive memory components (6a, 6b) arranged in at least one memory cell layer above a semiconductor substrate (4), word lines (7) and bit lines (8, 9) for making contact with the magnetoresistive memory components (6a, 6b) in the memory cell array (2); and having a drive logic arrangement (5a, 5b, 5c) for driving the magnetoresistive memory components (6a, 6b) in the memory cell array (2) via the word and bit lines (7, 8, 9), the drive logic arrangement (5a, 5b, 5c) being integrated below the memory cell array (2) in and on the semiconductor substrate (4).

    摘要翻译： MRAM存储器具有存储单元阵列（2），包括布置在半导体衬底（4）上方的至少一个存储单元层中的磁阻存储器组件（6a，6b），字线（7）和位线（8,9） 与存储单元阵列（2）中的磁阻存储器组件（6a，6b）接触; 并具有用于经由字线和位线（7,8,9）驱动存储单元阵列（2）中的磁阻存储器组件（6a，6b）的驱动逻辑装置（5a，5b，5c），驱动逻辑装置 （5a，5b，5c）集成在所述半导体衬底（4）中的所述存储单元阵列（2）的下方。