利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

101 条记录 (耗时 0.023 秒)

    Profile adjustment in plasma ion implanter
    4.
    发明授权
    Profile adjustment in plasma ion implanter 有权
    等离子体离子注入机轮廓调整

    公开(公告)号：US07528389B2

    公开(公告)日：2009-05-05

    申请号：US11376522

    申请日：2006-03-15

    申请人： Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold M. Persing

    发明人： Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold M. Persing

    IPC分类号： H01J37/244

    CPC分类号： H01J37/32412 ,  H01J37/3171 ,  H01J37/3299 ,  H01J2237/31705

    摘要： A method and apparatus are directed to providing a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that shallow and abrupt junctions in vertical and lateral directions are realized that are critical to device scaling in plasma doping systems.

    摘要翻译： 一种方法和装置旨在在等离子体掺杂系统中提供掺杂剂分布调整解决方案，以满足浓度和结深度要求。 可以执行偏置斜坡调整和偏置斜率调整以实现期望的掺杂剂分布，使得在垂直和横向方向上的浅和突变结被实现，这对于等离子体掺杂系统中的器件缩放至关重要。

    Etch and deposition control for plasma implantation
    5.
    发明申请
    Etch and deposition control for plasma implantation 审中-公开
    用于等离子体植入的蚀刻和沉积控制

    公开(公告)号：US20050287307A1

    公开(公告)日：2005-12-29

    申请号：US10874944

    申请日：2004-06-23

    申请人： Vikram Singh ,  Harold Persing ,  Timothy Miller ,  Atul Gupta ,  Ziwei Fang

    发明人： Vikram Singh ,  Harold Persing ,  Timothy Miller ,  Atul Gupta ,  Ziwei Fang

    IPC分类号： C03C15/00 ,  C23C14/00 ,  H01L21/223

    CPC分类号： H01L21/2236 ,  H01J37/32412

    摘要： A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surface-modifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.

    摘要翻译： 用于离子植入衬底的方法包括从至少一种植入材料形成等离子体，所述至少一种植入材料包括至少一种植入物种，将所述至少一种植入物种植入所述基质的表面，以及将所述至少一种表面改性物质 表面以减少与等离子体相关的表面损伤。 用于离子注入的装置被配置为实现该方法。

    Technique for boron implantation
    6.
    发明申请
    Technique for boron implantation 有权
    硼植入技术

    公开(公告)号：US20060063360A1

    公开(公告)日：2006-03-23

    申请号：US11227079

    申请日：2005-09-16

    申请人： Vikram Singh ,  Edmund Winder ,  Harold Persing ,  Timothy Miller ,  Ziwei Fang ,  Atul Gupta

    发明人： Vikram Singh ,  Edmund Winder ,  Harold Persing ,  Timothy Miller ,  Ziwei Fang ,  Atul Gupta

    IPC分类号： H01L21/04

    CPC分类号： H01L21/2236 ,  H01J37/32082 ,  H01J37/32412 ,  H01L21/26513

    摘要： A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.

    摘要翻译： 公开了硼注入技术。 在一个特定的示例性实施例中，该技术可以由用于硼注入的装置来实现。 该装置可以包括反应室。 该装置还可以包含耦合到反应室的五硼烷的源，其中源能够将基本上纯的形式的五硼烷供应到反应室中。 该装置还可以包括电源，其被配置为充分激发反应室中的五硼烷以产生具有含硼离子的等离子体放电。

    Technique for monitoring and controlling a plasma process
    7.
    发明授权
    Technique for monitoring and controlling a plasma process 失效
    监测和控制等离子体工艺的技术

    公开(公告)号：US07476849B2

    公开(公告)日：2009-01-13

    申请号：US11371907

    申请日：2006-03-10

    申请人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Panayotis Vourloumis ,  Vikram Singh ,  Ziwei Fang

    发明人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Panayotis Vourloumis ,  Vikram Singh ,  Ziwei Fang

    IPC分类号： H01J49/40 ,  G01N27/26 ,  G01N33/00

    CPC分类号： H01J49/40 ,  H01J37/32935

    摘要： An in-situ ion sensor is disclosed for monitoring ion species in a plasma chamber. The ion sensor may comprise: a drift tube; an extractor electrode and a plurality of electrostatic lenses disposed at a first end of the drift tube, wherein the extractor electrode is biased to attract ions from a plasma in the plasma chamber, and wherein the plurality of electrostatic lenses cause at least one portion of the attracted ions to enter the drift tube and drift towards a second end of the drift tube within a limited divergence angle; an ion detector disposed at the second end of the drift tube, wherein the ion detector detects arrival times associated with the at least one portion of the attracted ions; and a housing for the extractor, the plurality of electrostatic lenses, the drift tube, and the ion detector, wherein the housing accommodates differential pumping between the ion sensor and the plasma chamber.

    摘要翻译： 公开了用于监测等离子体室中的离子种类的原位离子传感器。 离子传感器可以包括：漂移管; 提取器电极和设置在漂移管的第一端处的多个静电透镜，其中所述提取器电极被偏置以从所述等离子体室中的等离子体吸引离子，并且其中所述多个静电透镜引起所述静电透镜的至少一部分 吸引离子进入漂移管并在有限的发散角内漂移到漂移管的第二端; 设置在所述漂移管的第二端处的离子检测器，其中所述离子检测器检测与所述吸引离子的所述至少一部分相关联的到达时间; 以及用于提取器，多个静电透镜，漂移管和离子检测器的壳体，其中壳体容纳离子传感器和等离子体室之间的差分泵浦。

    Technique for Monitoring and Controlling A PLasma Process
    8.
    发明申请
    Technique for Monitoring and Controlling A PLasma Process 审中-公开
    监测和控制PLasma过程的技术

    公开(公告)号：US20090283670A1

    公开(公告)日：2009-11-19

    申请号：US12272537

    申请日：2008-11-18

    申请人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Panayotis Vourloumis ,  Vikram Singh ,  Ziwei Fang

    发明人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Panayotis Vourloumis ,  Vikram Singh ,  Ziwei Fang

    IPC分类号： B01D59/44 ,  H01J49/00

    CPC分类号： H01J37/32422 ,  H01J37/32935

    摘要： A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to selectively attract ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.

    摘要翻译： 用于监测等离子体中的离子种类的飞行时间离子传感器包括壳体。 漂移管位于外壳中。 提取器电极位于漂移管的第一端处的壳体中，以便从等离子体吸引离子。 多个电极位于漂移管的靠近提取器电极的第一端。 多个电极被偏置以选择性地吸引离子进入漂移管并漂移到漂移管的第二端。 离子检测器位于漂移管的第二端附近。 离子检测器检测与吸引的离子的至少一部分相关联的到达时间。

    Plasma Doping System With Charge Control
    9.
    发明申请
    Plasma Doping System With Charge Control 审中-公开
    带充电控制的等离子体掺杂系统

    公开(公告)号：US20090104761A1

    公开(公告)日：2009-04-23

    申请号：US11875062

    申请日：2007-10-19

    申请人： Yongbae Jeon ,  Vikram Singh ,  Timothy Miller ,  Ziwei Fang ,  Steven Walther ,  Atul Gupta

    发明人： Yongbae Jeon ,  Vikram Singh ,  Timothy Miller ,  Ziwei Fang ,  Steven Walther ,  Atul Gupta

    IPC分类号： H01L21/26 ,  C23C16/513

    CPC分类号： H01J37/32642 ,  H01J37/32412 ,  H01J37/32935

    摘要： A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.

    摘要翻译： 等离子体掺杂的方法包括产生等离子体，该等离子体包括邻近于在等离子体室中支撑衬底的压板的掺杂剂离子。 压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 监测至少一个测量与有利于形成放电的充电条件有关的数据的传感器。 响应于测量数据修改至少一个等离子体处理参数，从而降低形成放电的可能性。

    Technique for monitoring and controlling a plasma process
    10.
    发明授权
    Technique for monitoring and controlling a plasma process 失效
    监测和控制等离子体工艺的技术

    公开(公告)号：US07453059B2

    公开(公告)日：2008-11-18

    申请号：US11678524

    申请日：2007-02-23

    申请人： Bon-Woong Koo ,  Ziwei Fang ,  Ludovic Godet ,  Vikram Singh ,  Vassilis Panayotis Vourloumis ,  Bernard G. Lindsay

    发明人： Bon-Woong Koo ,  Ziwei Fang ,  Ludovic Godet ,  Vikram Singh ,  Vassilis Panayotis Vourloumis ,  Bernard G. Lindsay

    IPC分类号： G01N27/26 ,  G01N33/00 ,  H01J49/40

    CPC分类号： H01J37/32422 ,  H01J37/32935

    摘要： A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to cause at least a portion of the attracted ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.

    摘要翻译： 用于监测等离子体中的离子种类的飞行时间离子传感器包括壳体。 漂移管位于外壳中。 提取器电极位于漂移管的第一端处的壳体中，以便从等离子体吸引离子。 多个电极位于漂移管的靠近提取器电极的第一端。 多个电极被偏置，以使至少一部分吸引的离子进入漂移管并漂移到漂移管的第二端。 离子检测器位于漂移管的第二端附近。 离子检测器检测与吸引的离子的至少一部分相关联的到达时间。