公开(公告)号：US20130327635A1

公开(公告)日：2013-12-12

申请号：US14000545

申请日：2012-02-14

申请人： Mamoru Kawashita ,  Masanori Ueda ,  Hiroe Ejiri ,  Fumiyasu Nomura

发明人： Mamoru Kawashita ,  Masanori Ueda ,  Hiroe Ejiri ,  Fumiyasu Nomura

IPC分类号： H01J23/02 ,  C23C14/35

CPC分类号： H01J23/02 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3438 ,  H01J37/3452

摘要： The invention aims to provide a magnetron electrode for plasma treatment that is free of significant abnormal electrical discharge and able to perform electrical discharge with long-term stability. A second electrode is provided only at a position outside the inner side surface of the outer magnetic pole of a first electrode or at a position where the magnetic flux density is low.

摘要翻译： 本发明的目的在于提供一种等离子体处理用的磁控管电极，该磁控管电极没有显着的异常放电并且能够长期稳定地进行放电。 仅在第一电极的外磁极的内侧表面外侧或磁通密度低的位置设置第二电极。

公开(公告)号：US20140023796A1

公开(公告)日：2014-01-23

申请号：US14007519

申请日：2012-02-14

申请人： Hiroe Ejiri ,  Keitaro Sakamoto ,  Fumiyasu Nomura ,  Masanori Ueda

发明人： Hiroe Ejiri ,  Keitaro Sakamoto ,  Fumiyasu Nomura ,  Masanori Ueda

IPC分类号： C23C14/00 ,  C23C16/455

CPC分类号： C23C14/0063 ,  C23C14/0068 ,  C23C14/562 ,  C23C16/401 ,  C23C16/402 ,  C23C16/455 ,  C23C16/45517 ,  C23C16/50 ,  C23C16/545 ,  H01J37/32559 ,  H01J37/32568 ,  H01J37/32752 ,  H01J37/3277 ,  H01J37/3405 ,  H01J37/3417 ,  H01J2237/3321 ,  H01J2237/3325

摘要： A plasma CVD apparatus comprising a vacuum chamber, and a main roll and a plasma generation electrode in the vacuum chamber, wherein a thin film is formed on a surface of a long substrate which is conveyed along the surface of the main roll is provided. At least one side wall extending in transverse direction of the long substrate is provided on each of the upstream and downstream sides in the machine direction of the long substrate, and the side walls surrounds the film deposition space between the main roll and the plasma generation electrode. The side walls are electrically insulated from the plasma generation electrode. The side wall on either the upstream or the downstream side in the machine direction of the long substrate is provided with at least one raw of gas supply holes formed by gas supply holes aligned in the transverse direction of the long substrate.

摘要翻译： 一种等离子体CVD装置，其特征在于，在所述真空室中具有真空室，主辊和等离子体产生电极，其特征在于，在沿着所述主辊的表面输送的长基板的表面上形成有薄膜。 在长基板的纵向上的上游侧和下游侧设置有沿长基板的横向延伸的至少一个侧壁，并且侧壁围绕主辊与等离子体产生电极之间的成膜空间 。 侧壁与等离子体产生电极电绝缘。 在长基板的机器方向上的上游侧或下游侧的侧壁设置有由长基板的横向排列的供气孔形成的气体供给孔的至少一个原料。