公开(公告)号：US20090174017A1

公开(公告)日：2009-07-09

申请号：US12402195

申请日：2009-03-11

申请人： Hirofumi Sumi

发明人： Hirofumi Sumi

IPC分类号： H01L31/00 ,  H01L27/146 ,  H01L31/02

CPC分类号： H01L27/14687 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

摘要： A solid-state image sensor and a method for manufacturing thereof and a semiconductor device and a method for manufacturing thereof are provided. A semiconductor substrate is made to be the thin film without using an SOI substrate and cost is reduced. An edge detection portion having hardness larger than that of a semiconductor substrate is formed in the thickness direction of the semiconductor substrate; the semiconductor substrate is made to be the thin film until a position where the edge detection portion is exposed by chemical mechanical polishing from the rear surface; and means Tr1 for reading out a signal from a photoelectric conversion element PD formed in the substrate are formed on the front surface of the semiconductor substrate, where incident light is acquired from the rear surface of the semiconductor substrate.

摘要翻译： 提供了一种固态图像传感器及其制造方法以及半导体器件及其制造方法。 半导体衬底被制成薄膜而不使用SOI衬底，成本降低。 在半导体衬底的厚度方向上形成硬度大于半导体衬底的硬度的边缘检测部分; 将半导体衬底制成薄膜，直到从后表面通过化学机械抛光使边缘检测部分暴露的位置; 并且在半导体衬底的前表面上形成用于从形成在衬底中的光电转换元件PD读出信号的装置Tr1，其中从半导体衬底的后表面获取入射光。

公开(公告)号：US07414663B2

公开(公告)日：2008-08-19

申请号：US11001029

申请日：2004-12-02

申请人： Kazuhiro Hoshino ,  Hirofumi Sumi ,  Kazuya Yonemoto

发明人： Kazuhiro Hoshino ,  Hirofumi Sumi ,  Kazuya Yonemoto

IPC分类号： H04N5/225

CPC分类号： H04N5/2254 ,  H04N5/2253 ,  H04N5/2257

摘要： The method for manufacturing a camera module of the present invention includes forming a bump on each electrode portion of an imaging element. Next, a through hole is formed in a substrate. The imaging element is then mounted on a first side of the substrate having at least one bump such that a light receiving portion of the imaging element receives light via the through-hole of the substrate. A periphery of the imaging element is sealed to the substrate. Next, a lens unit is mounted on a second side of the substrate.

摘要翻译： 本发明的摄像机模块的制造方法包括在摄像元件的每个电极部分上形成凸块。 接下来，在基板上形成通孔。 然后将成像元件安装在具有至少一个凸起的基板的第一侧上，使得成像元件的光接收部分经由基板的通孔接收光。 成像元件的周边被密封到基底。 接下来，将透镜单元安装在基板的第二侧上。

公开(公告)号：US07375757B1

公开(公告)日：2008-05-20

申请号：US09652150

申请日：2000-08-31

申请人： Kazuhiro Hoshino ,  Hirofumi Sumi ,  Kazuya Yonemoto

发明人： Kazuhiro Hoshino ,  Hirofumi Sumi ,  Kazuya Yonemoto

IPC分类号： H04N5/225

CPC分类号： H04N5/2254 ,  H04N5/2253 ,  H04N5/2257

摘要： The system and apparatus of the present invention are directed to a camera module in which an operational defect (generation of a ghost image) as a result of a reduction in thickness is eliminated. The camera module includes a substrate provided with a through-hole for light transmission, a light receiving portion provided on a first surface of an imaging element. The imaging element is flip chip mounted on a first side of the substrate such that the light receiving portion is exposed through the through-hole, and a shielding layer on a back surface of the imaging element wherein the back surface is opposite the first surface having the light receiving portion. A lens unit is mounted a second side of the substrate.

摘要翻译： 本发明的系统和装置涉及一种相机模块，其中消除了作为厚度减小的结果的操作缺陷（产生幻影）。 相机模块包括设置有用于光透射的通孔的基板，设置在成像元件的第一表面上的光接收部分。 成像元件是倒装芯片安装在基板的第一侧上，使得光接收部分通过通孔露出，并且在成像元件的后表面上的屏蔽层，其中后表面与第一表面相对， 光接收部分。 透镜单元安装在基板的第二侧。

公开(公告)号：US5776830A

公开(公告)日：1998-07-07

申请号：US947704

申请日：1997-10-09

申请人： Hirofumi Sumi ,  Keiichi Maeda ,  Yukiyasu Sugano ,  Kazuhide Koyama ,  Mitsuru Taguchi ,  Kazuhiro Hoshino

发明人： Hirofumi Sumi ,  Keiichi Maeda ,  Yukiyasu Sugano ,  Kazuhide Koyama ,  Mitsuru Taguchi ,  Kazuhiro Hoshino

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L21/283

CPC分类号： H01L21/28518 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856

摘要： The present invention provides a process for fabricating a connection structure comprising a anti-reaction layer having excellent barrier properties and having improved ohmic characteristics with respect to the semiconductor substrate. Accordingly, the present invention comprises forming a first anti-reaction layer by temporarily ceasing the film deposition, and then initiating the film deposition again to form a second anti-reaction layer on the surface of the previously deposited first anti-reaction layer. A heat treatment can be applied to the structure after depositing a anti-reaction layer.

摘要翻译： 本发明提供一种制造连接结构的方法，该连接结构包括具有优异的阻挡性能并具有相对于半导体衬底的改善的欧姆特性的抗反应层。 因此，本发明包括通过暂时停止膜沉积来形成第一抗反应层，然后再次引发膜沉积，以在先前沉积的第一抗反应层的表面上形成第二抗反应层。 沉积抗反应层后可以对结构进行热处理。

公开(公告)号：US5428234A

公开(公告)日：1995-06-27

申请号：US305975

申请日：1994-09-16

申请人： Hirofumi Sumi

发明人： Hirofumi Sumi

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/337 ,  H01L21/339 ,  H01L29/10 ,  H01L29/808 ,  H01L29/68

CPC分类号： H01L29/1054 ,  H01L29/1058 ,  H01L29/66651 ,  Y10S257/902

摘要： A semiconductor device which comprises a semiconductor substrate having thereon a channel region, said channel region comprising (A) a channel, and (B) a metallic layer or a compound layer of a metal with a constituent material of the semiconductor substrate, provided that at least a part of said metallic layer or said compound layer is included in said channel. The semiconductor device has stable characteristics with high operation speed, and yet, is capable of being fabricated by a simple process.

摘要翻译： 一种半导体器件，包括其上具有沟道区的半导体衬底，所述沟道区包括（A）沟道，以及（B）金属层或金属与半导体衬底的构成材料的化合物层， 所述金属层或所述化合物层的至少一部分包括在所述通道中。 该半导体器件具有运行速度高的稳定特性，而且能够通过简单的工艺制造。

公开(公告)号：US5399526A

公开(公告)日：1995-03-21

申请号：US903725

申请日：1992-06-24

申请人： Hirofumi Sumi

发明人： Hirofumi Sumi

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L21/48

CPC分类号： H01L21/76865 ,  H01L21/28518 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76859 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002 ,  Y10S148/105

摘要： A method of manufacturing a semiconductor device which comprises steps of forming a diffusion region to a semiconductor substrate; forming silicon compound film on the diffusion region; forming a metal film on the silicon compound film to form a metal silicide film and, further forming an interlayer film; forming a barrier metal material film on the interlayer film; then patterning the barrier metal material film to obtain a barrier metal layer, subsequently; patterning the interlayer film to form a contact hole and burying a wiring material into the contact hole thereby forming a wiring.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：向半导体衬底形成扩散区; 在扩散区上形成硅化合物膜; 在硅化合物膜上形成金属膜以形成金属硅化物膜，并进一步形成中间膜; 在所述中间膜上形成阻挡金属材料膜; 然后图案化阻挡金属材料膜以获得阻挡金属层; 图案化层间膜以形成接触孔并将布线材料埋入接触孔中，从而形成布线。

公开(公告)号：US5254498A

公开(公告)日：1993-10-19

申请号：US886092

申请日：1992-05-21

申请人： Hirofumi Sumi

发明人： Hirofumi Sumi

IPC分类号： H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/768 ,  H01L23/532 ,  H01L21/44

CPC分类号： H01L21/76831 ,  H01L21/7682 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53257 ,  H01L2924/0002 ,  Y10S148/02

摘要： Described herein is a method for forming a barrier metal structure in a minute contact hole in such a way as to ensure good coverage by the metal.The method of the invention comprises the steps of: opening a contact hole in an insulation film layer on a substrate in a diameter larger than an originally intended target value; forming a barrier metal layer over the entire surfaces of the insulation film layer; forming an oxidation film layer over the entire surfaces of the barrier metal layer until the diameter of the contact hole reaches the original target value; etching the oxidation film layer by anisotropic etching; and embedding a metal in the contact hole. Further, after forming a metal plug, the barrier metal layer may be selectively etched back in such a way as to leave a barrier metal layer only at the bottom of the contact hole.

摘要翻译： 这里描述了一种用于在微小接触孔中形成阻挡金属结构的方法，以确保金属的良好覆盖。 本发明的方法包括以下步骤：在直径大于原定目标值的直径的基板上的绝缘膜层上打开接触孔; 在绝缘膜层的整个表面上形成阻挡金属层; 在阻挡金属层的整个表面上形成氧化膜层，直到接触孔的直径达到原始目标值; 通过各向异性蚀刻蚀刻氧化膜层; 并将金属嵌入接触孔中。 此外，在形成金属插塞之后，阻挡金属层可以被选择性地回蚀，以便仅在接触孔的底部留下阻挡金属层。

公开(公告)号：US20140160332A1

公开(公告)日：2014-06-12

申请号：US14002307

申请日：2012-04-03

申请人： Hirofumi Sumi

发明人： Hirofumi Sumi

IPC分类号： H04N5/374

CPC分类号： H04N5/374 ,  H01L27/14603 ,  H01L27/14609 ,  H04N5/357 ,  H04N5/3658 ,  H04N5/378

摘要： A pixel includes an embedded photo diode (PD), an amplification transistor forming a source follower circuit having a gate for input and a source for output, and a transfer transistor that transfers a charge to the gate of the amplification transistor, the charge being photoelectrically converted by the PD. The amplification transistor is formed in a semiconductor substrate electrically isolated from a substrate on which the embedded PD and the transfer transistor are formed and the substrate of the amplification transistor is in a floating state. The reading unit includes a ΔΣ modulator that inputs/outputs the image signal per pixel unit and the output of the ΔΣ modulator is given, as feedback, to a capacitative unit functioning as a capacity to integrate the pixel.

摘要翻译： 像素包括嵌入式光电二极管（PD），形成具有用于输入的栅极的源极跟随器电路和用于输出的源极跟随器电路的放大晶体管，以及将电荷转移到放大晶体管的栅极的转移晶体管，电荷是光电 由PD转换。 放大晶体管形成在与其上形成有嵌入式PD和传输晶体管的衬底电隔离的半导体衬底中，并且放大晶体管的衬底处于浮置状态。 阅读单位包括＆Dgr＆＆ 调制器，每像素单位输入/输出图像信号，并输出＆Dgr;＆Sgr; 作为反馈，将调制器作为集成像素的能力起作用的电容单元。

公开(公告)号：US08711261B2

公开(公告)日：2014-04-29

申请号：US12903333

申请日：2010-10-13

申请人： Hirofumi Sumi ,  Nobuo Nakamura ,  Shoji Kawahito

发明人： Hirofumi Sumi ,  Nobuo Nakamura ,  Shoji Kawahito

IPC分类号： H04N5/335 ,  H04N5/235

CPC分类号： H04N5/3575 ,  H04N5/243 ,  H04N5/3696 ,  H04N5/37455 ,  H04N5/37457

摘要： A pre-amplifier (column region unit) of a solid-state imaging device including a pixel-signal controller. The pixel-signal controller, for each vertical signal line, detects the level of each pixel signal independently by a pixel-signal detector on the output side of a pixel-signal amplifier, and sets a gain independently to the pixel-signal amplifier according to the level of the signal. At a subsequent stage of the solid-state imaging device, an analog-to-digital (A/D) converter and a signal extending unit are provided. The A/D converter digitizes a pixel signal, and the digitized pixel signal is corrected by a gain set to the pixel-signal amplifier with reference to a classification signal from the pixel-signal detector, so that the dynamic range of signals of one screen is extended.

摘要翻译： 包括像素信号控制器的固态成像装置的前置放大器（列区域单元）。 像素信号控制器对于每个垂直信号线，由像素信号放大器的输出侧的像素信号检测器独立地检测每个像素信号的电平，并且根据图像信号放大器独立地设置增益 信号的电平。 在固态成像装置的后续阶段，提供了模数（A / D）转换器和信号延伸单元。 A / D转换器对像素信号进行数字化，参照来自像素信号检测器的分类信号，通过设置到像素信号放大器的增益来校正数字化像素信号，使得一个屏幕的信号的动态范围 延长了

公开(公告)号：US08030726B2

公开(公告)日：2011-10-04

申请号：US12402195

申请日：2009-03-11

申请人： Hirofumi Sumi

发明人： Hirofumi Sumi

IPC分类号： H01L31/12

CPC分类号： H01L27/14687 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

摘要： A solid-state image sensor and a method for manufacturing thereof and a semiconductor device and a method for manufacturing thereof are provided. A semiconductor substrate is made to be the thin film without using an SOI substrate and cost is reduced. An edge detection portion having hardness larger than that of a semiconductor substrate is formed in the thickness direction of the semiconductor substrate; the semiconductor substrate is made to be the thin film until a position where the edge detection portion is exposed by chemical mechanical polishing from the rear surface; and means Tr1 for reading out a signal from a photoelectric conversion element PD formed in the substrate are formed on the front surface of the semiconductor substrate, where incident light is acquired from the rear surface of the semiconductor substrate.

摘要翻译： 提供了一种固态图像传感器及其制造方法以及半导体器件及其制造方法。 半导体衬底被制成薄膜而不使用SOI衬底，成本降低。 在半导体衬底的厚度方向上形成硬度大于半导体衬底的硬度的边缘检测部分; 将半导体衬底制成薄膜，直到从后表面通过化学机械抛光使边缘检测部分暴露的位置; 并且在半导体衬底的前表面上形成用于从形成在衬底中的光电转换元件PD读出信号的装置Tr1，其中从半导体衬底的后表面获取入射光。