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    Capacitive coupling plasma processing apparatus
    1.
    发明申请
    Capacitive coupling plasma processing apparatus 审中-公开
    电容耦合等离子体处理装置

    公开(公告)号：US20060081337A1

    公开(公告)日：2006-04-20

    申请号：US11292368

    申请日：2005-12-02

    Applicant: Shinji Himori ,  Kimihiro Higuchi ,  Tatsuo Matsudo ,  Etsuo Iijima ,  Hiroharu Ito ,  Shoichiro Matsuyama ,  Noriaki Imai ,  Kazuya Nagaseki

    Inventor： Shinji Himori ,  Kimihiro Higuchi ,  Tatsuo Matsudo ,  Etsuo Iijima ,  Hiroharu Ito ,  Shoichiro Matsuyama ,  Noriaki Imai ,  Kazuya Nagaseki

    IPC: C23F1/00 ,  C23C14/00

    CPC classification number: H01J37/32091 ,  H01J2237/2001

    Abstract: A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode serving as a cathode electrode, and a second electrode grounded to serve as an anode electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. The second electrode includes a conductive counter surface facing the first electrode and exposed to the plasma generation region.

    Abstract translation: 电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。 在室中，用作阴极的第一电极和接地以用作阳极的第二电极彼此相对地设置。 设置RF电源以向第一电极提供RF功率以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。 目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。 第二电极包括面向第一电极并暴露于等离子体产生区域的导电计数器表面。

    MOUNTING DEVICE, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    2.
    发明申请
    MOUNTING DEVICE, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
    安装装置，等离子体处理装置和等离子体处理方法

    公开(公告)号：US20080106842A1

    公开(公告)日：2008-05-08

    申请号：US11934313

    申请日：2007-11-02

    Applicant: Hiroharu ITO ,  Kenichi Kato ,  Takehiro Ueda

    Inventor： Hiroharu ITO ,  Kenichi Kato ,  Takehiro Ueda

    IPC: H01L21/683 ,  B44C1/22 ,  C23C16/00 ,  H01L21/306

    CPC classification number: H01L21/6831 ,  H01L21/67028 ,  H01L21/68757

    Abstract: A mounting device includes a mounting body for sustaining a target object to be processed thereon; an electrostatic chuck disposed on the mounting body and having an electrode layer interposed between insulating layers, and the electrostatic chuck serving to electrostatically attract and hold the target object on a surface of the insulating layer by a electrostatic force generated between the electrode layer and the target object by a voltage applied to the electrode layer. Herein, an electrostatic chuck layer, which is one of the insulating layers on the side of a top surface of the electrode layer, is made of a plasma spray coating of yttrium oxide, which is formed by a plasma spraying, having a thickness of about 200 μm to 280 μm, and the electrostatic chuck layer has a surface roughness dependent on a particle diameter of the yttrium oxide used in the plasma spraying.

    Abstract translation: 安装装置包括用于维持要处理的目标物体的安装体; 设置在所述安装体上并具有介于绝缘层之间的电极层的静电吸盘，并且所述静电吸盘用于通过在所述电极层和所述靶材之间产生的静电力将所述目标物体静电吸引并保持在所述绝缘层的表面上 通过施加到电极层的电压来对象。 这里，作为电极层顶面一侧的绝缘层之一的静电吸盘层由等离子体喷涂等离子体喷涂法制成，其通过等离子喷涂形成，其厚度为约 200μm至280μm，并且静电吸盘层具有取决于等离子体喷涂中使用的氧化钇的粒径的表面粗糙度。

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