公开(公告)号：US20090045398A1

公开(公告)日：2009-02-19

申请号：US12239739

申请日：2008-09-27

申请人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Whan Cho

发明人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Whan Cho

IPC分类号： H01L21/34 ,  H01L29/22

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/02661 ,  Y10T428/265

摘要： A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.

摘要翻译： 一种制造质量好的ZnO类化合物半导体晶体的制造方法。 制备ZnO衬底具有由沿着m轴方向逐步布置的（0001）面的多个台阶形成的主表面，主表面的包络相对于（0001）面倾斜约2度，或 减。 ZnO基化合物半导体晶体在主表面上生长。

公开(公告)号：US07829207B2

公开(公告)日：2010-11-09

申请号：US12239739

申请日：2008-09-27

申请人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Whan Cho

发明人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Whan Cho

IPC分类号： B32B9/00 ,  B32B19/00 ,  C30B29/16 ,  C30B29/46

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/02661 ,  Y10T428/265

摘要： A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.

摘要翻译： 一种制造质量好的ZnO类化合物半导体晶体的制造方法。 制备ZnO衬底具有由沿着m轴方向逐步布置的（0001）面的多个台阶形成的主表面，主表面的包络相对于（0001）面倾斜约2度，或 减。 ZnO基化合物半导体晶体在主表面上生长。

公开(公告)号：US07438762B2

公开(公告)日：2008-10-21

申请号：US11509063

申请日：2006-08-24

申请人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Whan Cho

发明人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Whan Cho

IPC分类号： C30B25/12

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/02661 ,  Y10T428/265

摘要： A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.

摘要翻译： 一种制造质量好的ZnO类化合物半导体晶体的制造方法。 制备ZnO衬底具有由沿着m轴方向逐步布置的（0001）面的多个台阶制成的主表面，主表面的包络相对于（0001）面倾斜约2度，或 减。 ZnO基化合物半导体晶体在主表面上生长。

公开(公告)号：US20070152233A1

公开(公告)日：2007-07-05

申请号：US11509063

申请日：2006-08-24

申请人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Cho

发明人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Cho

IPC分类号： H01L33/00 ,  H01L29/24 ,  H01L21/00

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/02661 ,  Y10T428/265

摘要： A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.

摘要翻译： 一种制造质量好的ZnO类化合物半导体晶体的制造方法。 制备ZnO衬底具有由沿着m轴方向逐步布置的（0001）面的多个台阶形成的主表面，主表面的包络相对于（0001）面倾斜约2度，或 减。 ZnO基化合物半导体晶体在主表面上生长。

公开(公告)号：US20050145840A1

公开(公告)日：2005-07-07

申请号：US11031572

申请日：2005-01-06

申请人： Hiroyuki Kato ,  Kazuhiro Miyamoto ,  Michihiro Sano ,  Takafumi Yao

发明人： Hiroyuki Kato ,  Kazuhiro Miyamoto ,  Michihiro Sano ,  Takafumi Yao

IPC分类号： H01L21/363 ,  H01L29/04 ,  H01L29/22 ,  H01L29/225 ,  H01L33/06 ,  H01L33/28 ,  H01L33/42 ,  H01S5/327 ,  H01L29/10

CPC分类号： H01L33/28 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02516 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  H01L29/045 ,  H01L29/22 ,  H01L29/225 ,  H01S5/327

摘要： A method for manufacturing a semiconductor device includes the steps of: (a) preparing a non-polar single crystal substrate; (b) epitaxially growing an MgO layer on the non-polar single crystal substrate to a thickness of 3 nm or thicker to have rocksalt structure at a substrate temperature of 500° C. to 800° C.; (c) growing on the MgO layer a low temrperature growth layer made of ZnO group material at a substrate temperature of 500° C. or lower; (d) annealing the low temperature growth layer above the substrate at a temperature of 700° C. or higher; and (e) epitaxially growing a high temperature growth layer of ZnO group material on the annealed low temperature growth layer at a temperature of 600° C. or higher.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：（a）制备非极性单晶衬底; （b）在非极性单晶衬底上外延生长3nm或更厚的MgO层，以在500℃至800℃的衬底温度下具有岩盐结构。 （c）在500℃或更低的衬底温度下在MgO层上生长由ZnO基材料制成的低温生长层; （d）在700℃或更高的温度下使基材上方的低温生长层退火; 和（e）在退火的低温生长层上在600℃或更高的温度下外延生长ZnO基材料的高温生长层。

公开(公告)号：US07482618B2

公开(公告)日：2009-01-27

申请号：US11031572

申请日：2005-01-06

申请人： Hiroyuki Kato ,  Kazuhiro Miyamoto ,  Michihiro Sano ,  Takafumi Yao

发明人： Hiroyuki Kato ,  Kazuhiro Miyamoto ,  Michihiro Sano ,  Takafumi Yao

IPC分类号： H01L33/00

CPC分类号： H01L33/28 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02516 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  H01L29/045 ,  H01L29/22 ,  H01L29/225 ,  H01S5/327

摘要： A method for manufacturing a semiconductor device includes the steps of: (a) preparing a non-polar single crystal substrate; (b) epitaxially growing an MgO layer on the non-polar single crystal substrate to a thickness of 3 nm or thicker to have rocksalt structure at a substrate temperature of 500° C. to 800° C.; (c) growing on the MgO layer a low temperature growth layer made of ZnO group material at a substrate temperature of 500° C. or lower; (d) annealing the low temperature growth layer above the substrate at a temperature of 700° C. or higher; and (e) epitaxially growing a high temperature growth layer of ZnO group material on the annealed low temperature growth layer at a temperature of 600° C. or higher.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：（a）制备非极性单晶衬底; （b）在非极性单晶衬底上外延生长3nm或更厚的MgO层，以在500℃至800℃的衬底温度下具有岩盐结构。 （c）在500℃或更低的衬底温度下在MgO层上生长由ZnO基材料制成的低温生长层; （d）在700℃或更高的温度下使基材上方的低温生长层退火; 和（e）在退火的低温生长层上在600℃或更高的温度下外延生长ZnO基材料的高温生长层。

公开(公告)号：US20060170013A1

公开(公告)日：2006-08-03

申请号：US11391135

申请日：2006-03-28

申请人： Hiroyuki Kato ,  Kazuhiro Miyamoto ,  Michihiro Sano ,  Takafumi Yao

发明人： Hiroyuki Kato ,  Kazuhiro Miyamoto ,  Michihiro Sano ,  Takafumi Yao

IPC分类号： H01L21/00 ,  H01L29/82 ,  H01L27/14

CPC分类号： H01L33/28 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02516 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  H01L29/045 ,  H01L29/22 ,  H01L29/225 ,  H01S5/327

摘要： A method for manufacturing a semiconductor device includes the steps of: (a) preparing a non-polar single crystal substrate; (b) epitaxially growing an MgO layer on the non-polar single crystal substrate to a thickness of 3 nm or thicker to have rocksalt structure at a substrate temperature of 500° C. to 800° C.; (c) growing on the MgO layer a low temperature growth layer made of ZnO group material at a substrate temperature of 500° C. or lower; (d) annealing the low temperature growth layer above the substrate at a temperature of 700° C. or higher; and (e) epitaxially growing a high temperature growth layer of ZnO group material on the annealed low temperature growth layer at a temperature of 600° C. or higher.

公开(公告)号：US08143618B2

公开(公告)日：2012-03-27

申请号：US12371965

申请日：2009-02-17

申请人： Hiroshi Kotani ,  Michihiro Sano ,  Hiroyuki Kato ,  Naochika Horio ,  Akio Ogawa ,  Tomofumi Yamamuro

发明人： Hiroshi Kotani ,  Michihiro Sano ,  Hiroyuki Kato ,  Naochika Horio ,  Akio Ogawa ,  Tomofumi Yamamuro

IPC分类号： H01L29/10 ,  H01L21/00

CPC分类号： H01L33/28 ,  H01L24/45 ,  H01L33/44 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/01322 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn—Si—O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure.

摘要翻译： 一种ZnO基半导体器件包括：层叠结构，其包括第一半导体层，其包含第一导电类型的ZnO基半导体和包含与第一导电类型相反的第二导电类型的ZnO基半导体的第二半导体层，形成在第一半导体 并与第一半导体层一起形成pn结; 以及包含Zn，Si和O化合物的Zn-Si-O层，并覆盖暴露层压结构的pn结的表面。

公开(公告)号：US08137458B2

公开(公告)日：2012-03-20

申请号：US12028310

申请日：2008-02-08

申请人： Hiroyuki Kato ,  Michihiro Sano

发明人： Hiroyuki Kato ,  Michihiro Sano

IPC分类号： C30B29/16

CPC分类号： C30B29/16 ,  C23C16/405 ,  C30B25/14

摘要： A ZnO crystal growth method has the steps of (a) preparing a substrate having a surface capable of growing ZnO crystal exposing a Zn polarity plane; (b) supplying Zn and O above the surface of the substrate by alternately repeating a Zn-rich condition period and an O-rich condition period; and (c) supplying conductivity type determining impurities above the surface of the substrate while Zn and O are supplied at the step (b).

摘要翻译： ZnO晶体生长方法具有以下步骤：（a）制备具有能够生长暴露Zn极性平面的ZnO晶体的表面的衬底; （b）通过交替地重复富Zn条件周期和富O条件周期，在衬底表面上提供Zn和O; 和（c）在步骤（b）提供Zn和O时，在衬底的表面上提供确定杂质的导电类型。

公开(公告)号：US20090236598A1

公开(公告)日：2009-09-24

申请号：US12428567

申请日：2009-04-23

申请人： Akio OGAWA ,  Michihiro Sano ,  Hiroyuki Kato ,  Hiroshi Kotani ,  Tomofumi Yamamuro

发明人： Akio OGAWA ,  Michihiro Sano ,  Hiroyuki Kato ,  Hiroshi Kotani ,  Tomofumi Yamamuro

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/285 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L33/16 ,  Y10S438/914 ,  Y10S438/918

摘要： A ZnO layer is provided which can obtain emission at a wavelength longer than blue (e.g., 420 nm) and has a novel structure. A transition energy narrower by 0.6 eV or larger than a band gap of ZnO can be obtained by doping S into a ZnO layer.

摘要翻译： 提供了可以获得长于蓝色（例如420nm）的波长的发光并具有新颖结构的ZnO层。 通过将S掺杂到ZnO层中可以获得比ZnO的带隙窄0.6eV或更大的过渡能。