公开(公告)号：US07507678B2

公开(公告)日：2009-03-24

申请号：US10594252

申请日：2005-03-25

申请人： Norifumi Fujimura ,  Ryoma Hayakawa ,  Hiroya Kitahata ,  Tsuyoshi Uehara ,  Takuya Yara

发明人： Norifumi Fujimura ,  Ryoma Hayakawa ,  Hiroya Kitahata ,  Tsuyoshi Uehara ,  Takuya Yara

IPC分类号： H01L21/31

CPC分类号： H01J37/32009 ,  C23C8/24 ,  C23C8/28 ,  C23C8/36 ,  H01J37/32532 ,  H01L21/02249 ,  H01L21/3145 ,  H01L21/3185

摘要： Uniform oxynitride and nitride films can be formed by low-temperature and high-speed nitriding reaction not dependent on the nitriding time or nitriding temperature. A solid dielectric is provided on at least one of opposed surfaces of a pair of electrodes opposed to each other under a pressure of 300 (Torr) or higher, a nitrogen gas containing an oxide equal to or lower than 0.2% is introduced into a space between the pair of opposed electrodes, an electric field is applied to the nitrogen gas, and the resulting N2 (2nd p.s.) or N2 (H.I.R) active species is brought into contact with an object to be processed to form an oxynitride film/nitride film on a surface of the object to be processed.

摘要翻译： 可以通过不依赖于氮化时间或氮化温度的低温高速氮化反应形成均匀的氮氧化物和氮化物膜。 在300（Torr）以上的压力下，在一对电极的相对面的至少一个上设置固体电介质，将含有0.2％以上的氧化物的氮气引入到空间 在一对相对的电极之间，向氮气施加电场，并使得到的N 2（2nd ps）或N 2（HIR）活性物质与待处理的物体接触以形成氧氮化物膜/氮化物膜 在待处理物体的表面上。

公开(公告)号：US20080113519A1

公开(公告)日：2008-05-15

申请号：US11960558

申请日：2007-12-19

申请人： Norifumi FUJIMURA ,  Ryoma Hayakawa ,  Hiroya Kitahata ,  Tsuyoshi Uehara ,  Takuya Yara

发明人： Norifumi FUJIMURA ,  Ryoma Hayakawa ,  Hiroya Kitahata ,  Tsuyoshi Uehara ,  Takuya Yara

IPC分类号： H01L21/31

CPC分类号： H01J37/32009 ,  C23C8/24 ,  C23C8/28 ,  C23C8/36 ,  H01J37/32532 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/3145 ,  H01L21/3185

摘要： Uniform oxynitride and nitride films can be formed by low-temperature and high-speed nitriding reaction not dependent on the nitriding time or nitriding temperature. A solid dielectric is provided on at least one of opposed surfaces of a pair of electrodes opposed to each other under a pressure of 300 (Torr) or higher, a nitrogen gas containing an oxide equal to or lower than 0.2% is introduced into a space between the pair of opposed electrodes, an electric field is applied to the nitrogen gas, and the resulting N2 (2nd p.s.) or N2 (H.I.R) active species is brought into contact with an object to be processed to form an oxynitride film/nitride film on a surface of the object to be processed.

摘要翻译： 可以通过不依赖于氮化时间或氮化温度的低温高速氮化反应形成均匀的氮氧化物和氮化物膜。 在300（Torr）以上的压力下，在一对电极的相对面的至少一个的表面上设置固体电介质，将含有0.2％以上的氧化物的氮气导入空间 在一对相对的电极之间，向氮气施加电场，并且产生的N 2（2）和/或2 N 2 使（HIR）活性物质与待处理物体接触，以在被处理物体的表面上形成氧氮化物膜/氮化物膜。

公开(公告)号：US20070190801A1

公开(公告)日：2007-08-16

申请号：US10594252

申请日：2005-03-25

申请人： Norifumi Fujimura ,  Ryoma Hayakawa ,  Hiroya Kitahata ,  Tsuyoshi Uehara ,  Takuya Yara

发明人： Norifumi Fujimura ,  Ryoma Hayakawa ,  Hiroya Kitahata ,  Tsuyoshi Uehara ,  Takuya Yara

IPC分类号： H01L21/31

CPC分类号： H01J37/32009 ,  C23C8/24 ,  C23C8/28 ,  C23C8/36 ,  H01J37/32532 ,  H01L21/02249 ,  H01L21/3145 ,  H01L21/3185

摘要： Uniform oxynitride and nitride films can be formed by low-temperature and high-speed nitriding reaction not dependent on the nitriding time or nitriding temperature. A solid dielectric is provided on at least one of opposed surfaces of a pair of electrodes opposed to each other under a pressure of 300 (Torr) or higher, a nitrogen gas containing an oxide equal to or lower than 0.2% is introduced into a space between the pair of opposed electrodes, an electric field is applied to the nitrogen gas, and the resulting N2 (2nd p.s.) or N2 (H.I.R) active species is brought into contact with an object to be processed to form an oxynitride film/nitride film on a surface of the object to be processed.

摘要翻译： 可以通过不依赖于氮化时间或氮化温度的低温高速氮化反应形成均匀的氮氧化物和氮化物膜。 在300（Torr）以上的压力下，在一对电极的相对面的至少一个的表面上设置固体电介质，将含有0.2％以上的氧化物的氮气导入空间 在一对相对的电极之间，向氮气施加电场，并且产生的N 2（2）和/或2 N 2 使（HIR）活性物质与待处理物体接触，以在被处理物体的表面上形成氧氮化物膜/氮化物膜。

公开(公告)号：US20050016457A1

公开(公告)日：2005-01-27

申请号：US10500317

申请日：2003-10-07

申请人： Shinichi Kawasaki ,  Sumio Nakatake ,  Hiroya Kitahata ,  Setsuo Nakajima ,  Yuji Eguchi ,  Junichiro Anzai ,  Yoshinori Nakano

发明人： Shinichi Kawasaki ,  Sumio Nakatake ,  Hiroya Kitahata ,  Setsuo Nakajima ,  Yuji Eguchi ,  Junichiro Anzai ,  Yoshinori Nakano

IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/509 ,  H01J37/32 ,  C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45563 ,  C23C16/45595 ,  C23C16/509 ,  H01J37/3244

摘要： In a plasma film forming apparatus, two first electrodes 51 connected to a power source 4 and two grounded second electrodes 52 are arranged in the order of the second electrode 52, the first electrode 51, the first electrode 51 and the second electrode 52. A first flow passage 50a formed between the central first electrodes 51 allows a raw material gas (first gas) for being formed into a film to pass therethrough. A plasma discharge space 50b of a second flow passage formed between the first and second electrodes 51, 52 on the both sides allows an excitable gas (second gas) to pass therethrough, which excitable gas is exited by plasma such that the raw material can be formed into a film, but that the excitable gas itself is merely excited but not formed into a film. Those gases are converged at a crossing part 20c between the first and second flow passages and blown off via a common blowoff passage 25a. By this, the apparatus composing members such as electrodes can be prevented from being adhered with a film.

摘要翻译： 在等离子体成膜装置中，以第二电极52，第一电极51，第一电极51和第二电极52的顺序排列连接到电源4和两个接地的第二电极52的两个第一电极51。 形成在中央第一电极51之间的第一流路50a允许形成为膜的原料气体（第一气体）通过。 形成在两侧的第一和第二电极51,52之间的第二流动通道的等离子体放电空间50b允许可激发气体（第二气体）通过，可激发气体通过等离子体排出，使得原料可以 形成膜，但是可兴奋的气体本身仅仅被激发而不形成膜。 那些气体在第一和第二流动通道之间的交叉部分20c会聚，并经由共同的吹气通道25a吹出。 由此，可以防止构成诸如电极的构件的装置被膜粘附。

公开(公告)号：US20060096539A1

公开(公告)日：2006-05-11

申请号：US11272157

申请日：2005-11-10

申请人： Shinichi Kawasaki ,  Sumio Nakatake ,  Hiroya Kitahata ,  Setsuo Nakajima ,  Yuji Eguchi ,  Junichiro Anzai ,  Yoshinori Nakano

发明人： Shinichi Kawasaki ,  Sumio Nakatake ,  Hiroya Kitahata ,  Setsuo Nakajima ,  Yuji Eguchi ,  Junichiro Anzai ,  Yoshinori Nakano

IPC分类号： C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45563 ,  C23C16/45595 ,  C23C16/509 ,  H01J37/3244

摘要： In a plasma film forming apparatus, two first electrodes 51 connected to a power source 4 and two grounded second electrodes 52 are arranged in the order of the second electrode 52, the first electrode 51, the first electrode 51 and the second electrode 52. A first flow passage 50a formed between the central first electrodes 51 allows a raw material gas (first gas) for being formed into a film to pass therethrough. A plasma discharge space 50b of a second flow passage formed between the first and second electrodes 51, 52 on the both sides allows an excitable gas (second gas) to pass therethrough, which excitable gas is exited by plasma such that the raw material can be formed into a film, but that the excitable gas itself is merely excited but not formed into a film. Those gases are converged at a crossing part 20c between the first and second flow passages and blown off via a common blowoff passage 25a. By this, the apparatus composing members such as electrodes can be prevented from being adhered with a film.

摘要翻译： 在等离子体成膜装置中，以第二电极52，第一电极51，第一电极51和第二电极52的顺序排列连接到电源4和两个接地的第二电极52的两个第一电极51。 形成在中央第一电极51之间的第一流路50a允许形成为膜的原料气体（第一气体）通过。 形成在两侧的第一和第二电极51,52之间的第二流路的等离子体放电空间50b允许可激发气体（第二气体）通过，可激发气体通过等离子体排出，使得原料可以 形成膜，但是可兴奋的气体本身仅仅被激发而不形成膜。 那些气体会聚在第一和第二流动通道之间的交叉部分20c处，并经由共同的吹气通道25a吹出。 由此，可以防止构成诸如电极的构件的装置被膜粘附。

公开(公告)号：US07819081B2

公开(公告)日：2010-10-26

申请号：US10500317

申请日：2003-10-07

申请人： Shinichi Kawasaki ,  Sumio Nakatake ,  Hiroya Kitahata ,  Setsuo Nakajima ,  Yuji Eguchi ,  Junichiro Anzai ,  Yoshinori Nakano

发明人： Shinichi Kawasaki ,  Sumio Nakatake ,  Hiroya Kitahata ,  Setsuo Nakajima ,  Yuji Eguchi ,  Junichiro Anzai ,  Yoshinori Nakano

IPC分类号： C23C16/50 ,  C23C16/503 ,  C23C16/507 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/505 ,  C23C16/22

CPC分类号： C23C16/45574 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45563 ,  C23C16/45595 ,  C23C16/509 ,  H01J37/3244

摘要： In a plasma film forming apparatus, two first electrodes 51 connected to a power source 4 and two grounded second electrodes 52 are arranged in the order of the second electrode 52, the first electrode 51, the first electrode 51 and the second electrode 52. A first flow passage 50a formed between the central first electrodes 51 allows a raw material gas (first gas) for being formed into a film to pass therethrough. A plasma discharge space 50b of a second flow passage formed between the first and second electrodes 51, 52 on the both sides allows an excitable gas (second gas) to pass therethrough, which excitable gas is exited by plasma such that the raw material can be formed into a film, but that the excitable gas itself is merely excited but not formed into a film. Those gases are converged at a crossing part 20c between the first and second flow passages and blown off via a common blowoff passage 25a. By this, the apparatus composing members such as electrodes can be prevented from being adhered with a film.

摘要翻译： 在等离子体成膜装置中，以第二电极52，第一电极51，第一电极51和第二电极52的顺序排列连接到电源4和两个接地的第二电极52的两个第一电极51。 形成在中央第一电极51之间的第一流路50a允许形成为膜的原料气体（第一气体）通过。 形成在第一和第二电极51,52之间的第二流动通道的等离子体放电空间50b允许可激发气体（第二气体）通过，可激发气体通过等离子体排出，使得原料可以 形成膜，但是可兴奋的气体本身仅仅被激发而不形成膜。 那些气体在第一和第二流动通道之间的交叉部分20c会聚，并经由共同的吹气通道25a吹出。 由此，可以防止构成诸如电极的构件的装置被膜粘附。