摘要:
A program is provided for setting efficiently, and with precision, the inspection conditions of an inspection device that detects particles and deformed patterns in or on products such as semiconductor integrated circuits that are manufactured by simultaneously forming a plurality of products on a single substrate. In particular, the system achieves greater efficiency of the setting of cell comparison regions and the setting of non-inspection regions. Input processing of a product type code, input processing of chip size and configuration information, reading processing of circuit layout data, extraction processing of repeated pattern region coordinates, extraction processing of sparse region coordinates and circuit pattern condition registration processing are sequentially executed.
摘要:
A program is provided for setting efficiently, and with precision, the inspection conditions of an inspection device that detects particles and deformed patterns in or on products such as semiconductor integrated circuits that are manufactured by simultaneously forming a plurality of products on a single substrate. In particular, the system achieves greater efficiency of the setting of cell comparison regions and the setting of non-inspection regions. Input processing of a product type code, input processing of chip size and configuration information, reading processing of circuit layout data, extraction processing of repeated pattern region coordinates, extraction processing of sparse region coordinates and circuit pattern condition registration processing are sequentially executed.
摘要:
An inspection system comprises an inspection machine for inspecting a work which is processed in one of the manufacturing processes of a manufacturing line and an analysis system for outputting an inspection history list obtained by making calculations from the inspected result. The inspection history list shows a matrix of first information as the inspection processes in which the work is inspected or the manufacturing processes corresponding to the inspection processes in which the work is inspected and second information as to the works inspected by the inspection machine.
摘要:
A method for producing a thin film multilayer substrate having a base substrate, and, which a plurality of conductor pattern layers superposed thereon through dielectric layers therebetween comprises the steps of: optically detecting the uppermost conductor pattern layer whenever the conductor pattern layer is formed on the base substrate; inspecting an absence and/or presence of a fault of the conductor pattern layer; and repairing a faulty portion in accordance with fault position data detected by the inspecting. According to this method, it is possible to enhance a production yield of relatively large size of thin film multilayer substrates which needs a relatively small amount of production at a high production cost, for mounting LSI chips thereon.
摘要:
A defect inspection system can suppress an effect of light from a sample rough surface or a regular circuit pattern and increasing a gain of light from a defect such as a foreign material to detect the defect on the sample surface with high sensitivity. When a lens with a large NA value is used, the outer diameter of the lens is 10a, and an angle between the sample surface and a traveling direction of the light from a defect is α1. An oblique detection optics system receives the light from the defect at a reduced elevation angle α2 with respect to the sample surface to reduce light from the sample rough surface, an oxide film rough bottom surface, and a circuit pattern, and to increase the amount of the light from the defect and detected. The diameter 10a of a lens is smaller than the diameter 10b, resulting in a reduction in the ability to focus the scattered light. When a lens with an outer diameter 10c is used to improve the focus ability, the lens interferes with the sample. To avoid the interference, a portion of the lens interfering with the sample is removed. The lens has an aperture larger than the diameter 10b while the lens receives the light scattered at the elevation angle α2, making it possible to improve the ability to detect defects and lens performance simultaneously.
摘要:
There is disclosed a defect detecting apparatus that focuses a laser beam, irradiates it onto the surface of a sample to be examined, and detects a foreign substance/defect existing on the surface from the scattered light as a result of the irradiation of the beam onto the sample surface. In order to stably detect defects such as foreign substance, the defect detecting apparatus according to the invention is constructed to use a beam shape optical system by which the laser beam emitted from a laser source is shaped to change the illumination intensity from its Gauss distribution to a flat distribution so that the detected signal can be stably produced even if the relative position of a defect/foreign substance to the laser beam irradiation position is changed.
摘要:
The present invention relates to a defect detection apparatus and method by which foreign particles and circuit pattern defects can be detected in distinction from the edge roughness of wiring on the substrate. The defect detection apparatus comprises an irradiation optical system includes: a beam expander; an optical member group formed by stacking multiple plate-like optical members each having a different optical path length at least in a beam-converging direction in order to admit the laser beam with the beam diameter extended by the beam expander and emit multiple slit-like beams each spatially reduced in coherence in the beam-converging direction; and beam-converging optical system by which the multiple slit-like beams each emitted from the optical member group is converged into a slit-like beam in the beam-converging direction and the slit-like beam is irradiated from an oblique direction onto the surface of the subject.
摘要:
An analysis method includes one or more inspection steps for inspecting defects on a wafer, including an electrical inspection an step for inspecting electrical function of dies of the wafer, a determination step for determining whether each die is a good die or a bad die by using results obtained in the electrical inspection step, a calculation step for calculating the yield of dies without defects by using results obtained in the determination step, and an output step for outputting a result of the calculation step.
摘要:
A method and apparatus is disclosed for detecting a pattern image of each of a plurality of patterns on the surface of an object. Light emitted from either a light source including a wide wavelength or a light source including a plurality of monowavelengths is applied to the object. The object includes a layered structure having a plurality of layers, wherein at least a part of an uppermost layer of the object is optically transparent. Spectral illumination intensity characteristics of the light emitted from the light source is varied, depending on information about both the layered structure of the object, and a material of the object to obtain a desired spectral illumination intensity, and a pattern image of each of patterns is detected as either a one-dimensional or a two-dimensional image based on light reflected from the object.
摘要:
A defect inspection method and apparatus detect a defect which exists on the surface of a protection layer or a defect which exists in the protection layer and scatters the light on its surface, through the detection of the light which is derived from an illumination light and reflected on the protection layer surface and the light which is derived from a slit-formed illumination light and scattered in the area between the position where the light is incident to the transparent protection layer and the position where the surface of an element underneath the transparent protection layer is illuminated. An image process, which images two elements having the same appearance and compares the images, thereby to reduce inconsistent components emerging in portions other than a defective portion, is conducted through imaging under the bright field illumination and bright/dark field combined illumination, and the images are rendered the minimum filtering process based on 3-by-3 pixels and the defect judgement process based on comparison.