公开(公告)号：US20110133437A1

公开(公告)日：2011-06-09

申请号：US12963041

申请日：2010-12-08

Applicant: Sung Geun Jang ,  Ho Yong Lee

Inventor： Sung Geun Jang ,  Ho Yong Lee

IPC: B60R21/239 ,  B60R21/2338

CPC classification number: B60R21/2338 ,  B60R21/205 ,  B60R21/239 ,  B60R2021/0032 ,  B60R2021/23382 ,  B60R2021/2395

Abstract: A front airbag including a sub-string and a vent. The front airbag attenuates impact in order to provide protection to a child or an occupant in an abnormal position on a passenger seat. Upon a vehicle collision, the front airbag discharges internal air through a vent provided at the lateral surface of the front airbag, if the front airbag is not inflated at the front, but is instead laterally inflated. The front airbag includes a main tether provided at a central portion of an airbag cushion, a vent selectively discharging air to an outside from the front airbag, and a sub-string, connected to and between the main tether, to control opening/closing of the vent part.

Abstract translation: 一个前排安全气囊，包括一个子串和一个通风口。 前排安全气囊减轻冲击力，以便在乘客座椅上的异常位置向儿童或乘员提供保护。 在车辆碰撞时，如果前方安全气囊在前方没有膨胀，而是侧向膨胀，则前部安全气囊通过设置在前部安全气囊的侧面的通气口排出内部空气。 前部安全气囊包括设置在气囊垫的中心部分的主系绳，从前部气囊选择性地将空气排出到外部的排气口以及连接到主系统之间和之间的子串，以控制打开/关闭 通风口部分。

公开(公告)号：US20090211515A1

公开(公告)日：2009-08-27

申请号：US12389117

申请日：2009-02-19

Applicant: Ho-Yong LEE ,  Jong-Bong LEE ,  Tae-Moo HUR ,  Dong-Ho KIM

Inventor： Ho-Yong LEE ,  Jong-Bong LEE ,  Tae-Moo HUR ,  Dong-Ho KIM

IPC: C30B1/02

CPC classification number: C30B29/30 ,  C30B1/04 ,  C30B29/32

Abstract: By controlling the average size of matrix grains of polycrystalline bodies to more than a critical size at which an abnormal, exaggerated or discontinuous grain growth ends, and less than twice the critical size, large single crystals enough for practical use may be made even without occurring abnormal grain growth in polycrystalline bodies only through a heat treatment process without using a melting process and a special apparatus, thereby allowing the mass production of the large single crystals at low costs with high reproduction possibility.

Abstract translation: 通过将多晶体的基体晶粒的平均尺寸控制到异常，夸张或不连续晶粒生长结束的临界尺寸，并且小于临界尺寸的两倍，即使没有发生，也可以进行足够实用的大的单晶 仅通过热处理工艺而不使用熔融工艺和特殊装置的多晶体晶粒生长异常，从而允许以低成本大量生产大量单晶，具有高再现可能性。

公开(公告)号：US07208041B2

公开(公告)日：2007-04-24

申请号：US10845095

申请日：2004-05-14

Applicant: Ho-Yong Lee ,  Jong-Bong Lee ,  Tae-Moo Hur

Inventor： Ho-Yong Lee ,  Jong-Bong Lee ,  Tae-Moo Hur

IPC: C30B1/10

CPC classification number: C30B11/00 ,  C30B29/32

Abstract: An effective, simple and low-cost a method for growing single crystals of perovskite oxideshaving primary and secondary abnormal grain growths according to temperature condition higher than a determined temperature or an atmosphere of heat treatment, involves a perovskite seed single crystal being adjoined to a polycrystal of perovskite oxides and heating the adjoined combination whereby the seed single crystal grows into the polycrystal at the interface therebetween repressing secondary abnormal grain growths inside the polycrystal. 1) The composition ratio of the polycrystal is controlled and/or the specific component(s) of the polycrystal is(are) added in an excess amount compared to the amount of the component(s) of the original composition of the polycrystal, 2) the heating is performed in the temperature range which is over primary abnormal grain growths completion temperature and below secondary abnormal grain growths activation temperature, whereby the seed single crystal grows continuously.

Abstract translation: 根据高于确定的温度或热处理气氛的温度条件，生长具有初级和次级异常晶粒生长的钙钛矿氧化物单晶的有效的，简单的和低成本的方法包括邻近多晶的钙钛矿种子单晶 的钙钛矿氧化物，并加热相邻的组合，由此种子单晶在其间的界面处生长成多晶体，从而抑制多晶中的次级异常晶粒生长。 1）与多晶原始组成的组分的量相比，控制多晶体的组成比和/或多晶体的特定组分以过量的量添加，2 ）在超过初级异常晶粒生长完成温度并且低于次级异常晶粒生长活化温度的温度范围内进行加热，从而种子单晶连续生长。

公开(公告)号：US06548011B1

公开(公告)日：2003-04-15

申请号：US09687879

申请日：2000-10-12

Applicant: Young Woo Rhee ,  Ho Yong Lee ,  Suk Joong Kang

Inventor： Young Woo Rhee ,  Ho Yong Lee ,  Suk Joong Kang

IPC: C04B3332

CPC classification number: C04B35/117 ,  C04B35/111 ,  C04B35/6268 ,  C04B35/64 ,  C04B2235/3217 ,  C04B2235/3241 ,  C04B2235/3272 ,  C04B2235/604 ,  C04B2235/6582 ,  C04B2235/6584 ,  C04B2235/663 ,  C04B2235/80 ,  C04B2235/85 ,  C04B2235/96

Abstract: A method of manufacturing an alumina-based ceramic includes sintering a powder compact of an iron-containing alumina powder in an atmosphere (N2, 95 N2-5 H2, H2) of a relatively low oxygen partial pressure, and annealing in an atmosphere (80 N2-20 O2, O2) higher in oxygen partial pressure than the sintering atmosphere to provide an alumina-based ceramic with a grain-boundary migration layer on a surface thereof. The resulting undulated grain boundaries on the surface layer suppress and deflect the crack propagation, thereby improving the short-crack toughness. The formation of a grain-boundary migration layer on the surface of an alumina-based ceramic brings about a great improvement in short-crack related properties, including durability and wear resistance.

Abstract translation: 制造氧化铝基陶瓷的方法包括在相对较低的氧分压的气氛（N 2，95 N 2，H 2，H 2）中烧结含氧氧化铝粉末的粉末压块，并在大气中退火（80 N2-20 O2，O2）的氧分压比烧结气氛高，以提供在其表面上具有晶界迁移层的氧化铝基陶瓷。 表面层上产生的波状晶界抑制和偏转裂纹扩展，从而提高短裂纹韧性。 在氧化铝系陶瓷的表面上形成晶界迁移层，具有短裂纹相关性能的显着改善，包括耐久性和耐磨性。

公开(公告)号：US20050150446A1

公开(公告)日：2005-07-14

申请号：US10507819

申请日：2003-10-09

Applicant: Ho-Yong Lee ,  Jong-Bong Lee ,  Tae-Moo Hur ,  Dong-Ho Kim

Inventor： Ho-Yong Lee ,  Jong-Bong Lee ,  Tae-Moo Hur ,  Dong-Ho Kim

IPC: C30B1/02 ,  C30B1/04 ,  C30B29/32 ,  C30B19/00

CPC classification number: C30B1/02 ,  C30B29/30 ,  C30B29/32

Abstract: The invention relates to a method for growing single crystals in polycrystalline bodies in which abnormal grain growth occurs. The method is characterized by controlling the average size of matrix grains of polycrystalline bodies in which abnormal grain growth occurs, whereby reducing the number density (number of abnormal grains/unit volume) of abnormal grains to generate only a extremely limited number of abnormal grains or inhibit the generation of abnormal grains within the extent of guaranteeing the driving force of abnormal grain growth. Therefore, the invention grows continuously only the extremely limited number of abnormal grains or only the seed single crystal into the polycrystalline body to obtain a large single crystal having a size larger than 50 mm.

Abstract translation: 本发明涉及一种在晶体生长异常的多晶体中生长单晶的方法。 该方法的特征在于控制发生异常晶粒生长的多晶体的基体晶粒的平均尺寸，从而减少异常晶粒的数量密度（异常晶粒数/单位体积），仅产生非常有限数量的异常晶粒或 在保证异常谷物生长的驱动力的程度内抑制异常谷物的产生。 因此，本发明连续生长极限数量的异常晶粒或只将晶种单晶生长到多晶体中，以获得尺寸大于50mm的大单晶。

公开(公告)号：US06482259B1

公开(公告)日：2002-11-19

申请号：US09646610

申请日：2001-02-20

Applicant: Ho-Yong Lee ,  Jae-Suk Kim ,  Jong-Hong Lee ,  Tae-Moo Hur ,  Doe-Yeon Kim ,  Nong-Moon Hwang ,  Byoung-Ki Lee ,  Sung-Yoon Chung ,  Suk-Joong L. Kang

Inventor： Ho-Yong Lee ,  Jae-Suk Kim ,  Jong-Hong Lee ,  Tae-Moo Hur ,  Doe-Yeon Kim ,  Nong-Moon Hwang ,  Byoung-Ki Lee ,  Sung-Yoon Chung ,  Suk-Joong L. Kang

IPC: C30B110

CPC classification number: C30B11/00 ,  C30B29/32

Abstract: The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1-x)(TiyN1-y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has an advantage to provide an effective low cost in manufacturing process for single crystals by using usual heat-treatment process without special equipments. The method for growing single crystals of barium titanate and barium titanate solid solutions according to this invention can be also applicable to other material systems showing abnormal grain growth behavior.

Abstract translation: 本发明涉及一种生长钛酸钡[BaTiO3]和钛酸钡固溶体[（BaxM1-x）（TiyN1-y）O3]单晶的方法。 本发明涉及一种用于生长钛酸钡或钛酸钡固体溶液的单晶的方法，其显示出主要和次要的异常晶粒生长，其温度高于液体形成温度，其特征在于包括少量次级异常晶粒继续的步骤 在略低于次生异常晶粒生长开始发生的临界温度的温度下生长。 根据本发明的用于生长钛酸钡或钛酸钡固溶体单晶的方法具有通过使用通常的热处理工艺而无需特殊设备来提供单晶制造工艺中有效的低成本的优点。 根据本发明的用于生长钛酸钡和钛酸钡固溶体的单晶的方法也可以应用于显示异常晶粒生长行为的其它材料体系。

公开(公告)号：US08202364B2

公开(公告)日：2012-06-19

申请号：US12389117

申请日：2009-02-19

Applicant: Ho-Yong Lee ,  Jong-Bong Lee ,  Tae-Moo Hur ,  Dong-Ho Kim

Inventor： Ho-Yong Lee ,  Jong-Bong Lee ,  Tae-Moo Hur ,  Dong-Ho Kim

IPC: C30B15/14 ,  C30B1/00 ,  C30B3/00 ,  C30B5/00 ,  C30B28/02

CPC classification number: C30B29/30 ,  C30B1/04 ,  C30B29/32

Abstract: By controlling the average size of matrix grains of polycrystalline bodies to more than a critical size at which an abnormal, exaggerated or discontinuous grain growth ends, and less than twice the critical size, large single crystals enough for practical use may be made even without occurring abnormal grain growth in polycrystalline bodies only through a heat treatment process without using a melting process and a special apparatus, thereby allowing the mass production of the large single crystals at low costs with high reproduction possibility.

Abstract translation: 通过将多晶体的基体晶粒的平均尺寸控制到异常，夸张或不连续晶粒生长结束的临界尺寸，并且小于临界尺寸的两倍，即使没有发生，也可以进行足够实用的大的单晶 仅通过热处理工艺而不使用熔融工艺和特殊装置的多晶体晶粒生长异常，从而允许以低成本大量生产大量单晶，具有高再现可能性。

公开(公告)号：US08119022B2

公开(公告)日：2012-02-21

申请号：US12092664

申请日：2006-11-06

Applicant: Ho-Yong Lee ,  Sung-Min Lee ,  Dong-Ho Kim

Inventor： Ho-Yong Lee ,  Sung-Min Lee ,  Dong-Ho Kim

IPC: H01L41/18 ,  H01L41/00 ,  C04B35/00

CPC classification number: C30B29/22 ,  C30B1/02 ,  C30B29/30 ,  C30B29/32 ,  H01L41/18

Abstract: A piezoelectric single crystal and piezoelectric and dielectric application parts using the same are provided, which have all of high dielectric constant K3T, high piezoelectric constants (d33 and k33), high phase transition temperatures (Tc and TRT), high coercive electric field Ec and improved mechanical properties and thus can be used in high temperature ranges and high voltage conditions. Furthermore, the piezoelectric single crystals are produced by the solid-state single crystal growth adequate for mass production of single crystals and the single crystal composition is developed not to contain expensive raw materials so that the piezoelectric single crystals can be easily commercialized. With the piezoelectric single crystals and piezoelectric single crystal application parts, the piezoelectric and dielectric application parts using the piezoelectric single crystals of excellent properties can be produced and used in the wide temperature range.

Abstract translation: 提供了具有高介电常数K3T，高压电常数（d33和k33），高相变温度（Tc和TRT），高矫顽电场Ec和高矫顽电场Ec的压电单晶和压电和介电应用部件， 改进的机械性能，因此可以在高温范围和高电压条件下使用。 此外，压电单晶通过适合大量生产单晶的固态单晶生长产生，并且单晶组合物被开发成不含有昂贵的原料，使得压电单晶易于商业化。 使用压电单晶和压电单晶应用部件，可以在宽的温度范围内制造使用具有优异性能的压电单晶的压电和电介质应用部件。

公开(公告)号：US06358464B1

公开(公告)日：2002-03-19

申请号：US09693930

申请日：2000-10-23

Applicant: Byung Kee Lee ,  Yang Il Jung ,  Ho Yong Lee ,  Suk-Joong Kang ,  Sung Yoon Chung

Inventor： Byung Kee Lee ,  Yang Il Jung ,  Ho Yong Lee ,  Suk-Joong Kang ,  Sung Yoon Chung

IPC: C04B3332

CPC classification number: H01G4/1227 ,  C04B35/4682 ,  C04B35/626

Abstract: A method for making a BaTiO3-based dielectric having a high dielectric constant and a low dielectric loss wherein, a BaTiO3-based body is subjected to a pre-heat treatment in a hydrogen (H2) atmosphere or a reducing atmosphere containing mixed gas of hydrogen and nitrogen in a ratio of hydrogen:nitrogen=5 to 100%:0 to 95% prior to a sintering process in the manufacture of dielectrics, in order to obtain a reduced average grain size of BaTiO3. By virtue of the reducing average grain size of BaTiO3, a BaTiO3-based dielectric having a high dielectric constant and a low dielectric loss is obtained. This method provides an advantage in that it is possible to make a BaTiO3-based dielectric having a very small average grain size while having a high relative density in accordance with a simple heat treatment conducted for pure BaTiO3 or even for BaTiO3 added with an additive in a reducing atmosphere at a temperature less than a liquid phase forming temperature, prior to a sintering process for sintering the BaTiO3.

Abstract translation: 一种制备具有高介电常数和低介电损耗的BaTiO3基电介质的方法，其中将BaTiO 3基体在氢（H 2）气氛或含有氢气混合气体的还原气氛中进行预热处理 并且在制造电介质的烧结过程之前，氮：氮= 5〜100％：0〜95％的氮，以获得BaTiO 3的平均粒径的降低。 由于BaTiO 3的平均粒径减小，得到介电常数高，介电损耗低的BaTiO3系电介质。 该方法的优点在于，可以根据纯BaTiO 3或甚至添加添加剂的BaTiO 3的简单热处理，制造具有非常小的平均晶粒尺寸的BaTiO 3基电介质，同时具有高的相对密度 在烧结BaTiO 3的烧结工艺之前，在低于液相形成温度的温度下还原气氛。

公开(公告)号：US08434786B2

公开(公告)日：2013-05-07

申请号：US12963041

申请日：2010-12-08

Applicant: Sung Geun Jang ,  Ho Yong Lee

Inventor： Sung Geun Jang ,  Ho Yong Lee

IPC: B60R21/2338

CPC classification number: B60R21/2338 ,  B60R21/205 ,  B60R21/239 ,  B60R2021/0032 ,  B60R2021/23382 ,  B60R2021/2395

Abstract: A front airbag including a sub-string and a vent. The front airbag attenuates impact in order to provide protection to a child or an occupant in an abnormal position on a passenger seat. Upon a vehicle collision, the front airbag discharges internal air through a vent provided at the lateral surface of the front airbag, if the front airbag is not inflated at the front, but is instead laterally inflated. The front airbag includes a main tether provided at a central portion of an airbag cushion, a vent selectively discharging air to an outside from the front airbag, and a sub-string, connected to and between the main tether, to control opening/closing of the vent part.

Abstract translation: 一个前排安全气囊，包括一个子串和一个通风口。 前排安全气囊减轻冲击力，以便在乘客座椅上的异常位置向儿童或乘员提供保护。 在车辆碰撞时，如果前方安全气囊在前方没有膨胀，而是侧向膨胀，则前部安全气囊通过设置在前部安全气囊的侧面的通气口排出内部空气。 前部安全气囊包括设置在气囊垫的中心部分的主系绳，从前部气囊选择性地将空气排出到外部的排气口以及连接到主系统之间和之间的子串，以控制打开/关闭 通风口部分。