公开(公告)号：US20060258327A1

公开(公告)日：2006-11-16

申请号：US11429780

申请日：2006-05-08

Applicant: Baik-Woo Lee ,  Markondeya Pulugurtha ,  Chong Yoon ,  Rao Tummala ,  Isaac Abothu ,  Swapan Bhattacharya

Inventor： Baik-Woo Lee ,  Markondeya Pulugurtha ,  Chong Yoon ,  Rao Tummala ,  Isaac Abothu ,  Swapan Bhattacharya

IPC: H04B1/06 ,  H01L21/00

CPC classification number: H01G4/206 ,  H01G4/258

Abstract: Disclosed are composite RF devices having low temperature coefficient of permittivity (TCP) and methods for fabricating same. The RF devices comprise first and second conductive electrodes with a composite dielectric material disposed there between that comprises a polymer material having positive or negative TCP and one or more ceramic filler materials having corresponding negative or positive temperature coefficients of permittivity. The composite dielectric material may also comprise a blend of positive and negative TCP ceramic filler materials. The composite dielectric material may also have a bimodal distribution of positive and negative TCP filler materials to vary the packing density of the dielectric material. Various devices may be fabricated including thin and thick film capacitors and antennas, which may be formed on or within an organic layer, silicon material, ceramic material, ceramic composite material or insulating material.

Abstract translation: 公开了具有低温介电常数（TCP）的复合RF器件及其制造方法。 RF器件包括第一和第二导电电极，其中设置有复合电介质材料，其间包括具有正或负TCP的聚合物材料和具有相应的负或正温度介电常数系数的一种或多种陶瓷填料材料。 复合介电材料还可以包括正和负TCP陶瓷填料材料的共混物。 复合介电材料也可以具有正和负的TCP填充材料的双峰分布，以改变电介质材料的堆积密度。 可以制造各种装置，其包括可以形成在有机层，硅材料，陶瓷材料，陶瓷复合材料或绝缘材料之上或之内的薄膜和厚膜电容器和天线。

公开(公告)号：US20070040204A1

公开(公告)日：2007-02-22

申请号：US11505201

申请日：2006-08-16

Applicant: Markondeya Pulugurtha ,  Devarajan Balaraman ,  Isaac Abothu ,  Rao Tummala ,  Farrokh Ayazi

Inventor： Markondeya Pulugurtha ,  Devarajan Balaraman ,  Isaac Abothu ,  Rao Tummala ,  Farrokh Ayazi

IPC: H01L27/108

CPC classification number: H01L27/1203 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/84 ,  H01L28/55 ,  H01L28/91 ,  H05K1/162 ,  H05K3/243 ,  H05K2201/0175 ,  H05K2201/0355 ,  H05K2201/0373 ,  H05K2203/0315

Abstract: Disclosed are three-dimensional dielectric structures on high surface area electrodes and fabrication methods. Exemplary structures comprise a copper foil substrate, trench electrodes or high surface area porous electrode structures formed on the substrate, a insulating thin film formed on the surface and laminating the foil on a organic substrate. A variety of materials may be used to make the films including perovksite ceramics such as barium titanate, strontium titanate, barium strontium titanate (BST), lead zirconate titanate (PZT); other intermediate dielectric constant films such as zinc oxide, aluminum nitride, silicon nitride; typical paraelectrics such as tantalum oxide, alumina, and titania. The films may be fabricated using sol-gel, hydrothermal synthesis, anodization or vapor deposition techniques.

Abstract translation: 公开了高表面电极上的三维电介质结构和制造方法。 示例性结构包括铜箔衬底，形成在衬底上的沟槽电极或高表面积多孔电极结构，在表面上形成的绝缘薄膜，并将箔层压在有机衬底上。 可以使用各种材料来制造包括钛酸钡，钛酸锶，钛酸锶钡（BST），锆钛酸铅（PZT）等周波陶瓷的膜。 其它中间介电常数膜如氧化锌，氮化铝，氮化硅; 典型的顺电介质如氧化钽，氧化铝和二氧化钛。 可以使用溶胶 - 凝胶，水热合成，阳极氧化或气相沉积技术来制造膜。

公开(公告)号：US20060269762A1

公开(公告)日：2006-11-30

申请号：US11363334

申请日：2006-02-27

Applicant: Markondeya Pulugurtha ,  Devarajan Balaraman ,  Rao Tummala ,  Isaac Abothu

Inventor： Markondeya Pulugurtha ,  Devarajan Balaraman ,  Rao Tummala ,  Isaac Abothu

IPC: B32B15/04

CPC classification number: H05K1/162 ,  H01G4/10 ,  H01G4/33 ,  H05K3/388 ,  H05K2201/0175 ,  H05K2201/0355 ,  H05K2201/09763 ,  H05K2203/121 ,  Y10T428/31678

Abstract: Disclosed are organic-compatible thin film processing techniques with reactive (such as Ti) layers for embedding capacitors into substrates. Hydrothermal synthesis allows direct deposition of high-k films with capacitance density of about 1 μF/cm2 on organic substrates. This is done by reactively growing a high-k film from Ti foil/Ti-coated copper foil/Ti precursor-coated organic substrate in an alkaline barium ion bath. Alternatives may be used to address multiple coatings, low temperature baking, low temperature pyrolysis with oxygen plasma, etc. Sol-gel and RF-sputtering assisted by a reaction with the intermediate layer and a foil transfer process may be used to integrate perovskite thin films with a capacitance in the range of 1-5 μF/cm2. Thermal oxidation of titanium foil/Ti-coated copper foil/Ti-coated organic substrate with a copper conductive layer is also a reactively grown high-k film process for integrating capacitance of hundreds of nF with or without using a foil transfer process.

Abstract translation: 公开了具有用于将电容器嵌入衬底中的反应性（例如Ti）层的有机相容薄膜处理技术。 水热合成允许在有机衬底上直接沉积具有约1μF/ cm 2的电容密度的高k膜。 这是通过在碱性钡离子浴中从Ti箔/ Ti涂覆的铜箔/ Ti前体涂覆的有机衬底上反应生长高k膜而完成的。 替代品可用于处理多层涂料，低温烘烤，氧等离子体的低温热解等。通过与中间层反应和箔转移工艺进行辅助的溶胶 - 凝胶和RF溅射可用于整合钙钛矿薄膜 电容量在1-5μF/ cm 2之间。 具有铜导电层的钛箔/ Ti涂覆的铜箔/ Ti涂覆的有机衬底的热氧化也是用于利用或不使用箔转移工艺来集成数百nF的电容的反应生长的高k膜工艺。

公开(公告)号：US20050274227A1

公开(公告)日：2005-12-15

申请号：US11138011

申请日：2005-05-26

Applicant: Ankur Aggarwal ,  Isaac Abothu ,  Pulugurtha Raj ,  Rao Tummala

Inventor： Ankur Aggarwal ,  Isaac Abothu ,  Pulugurtha Raj ,  Rao Tummala

IPC: B23K35/00 ,  B23K35/26 ,  B23K35/34 ,  C22B3/24 ,  H01L21/288 ,  H01L21/60 ,  H01L21/768

CPC classification number: H01L21/2885 ,  B23K35/007 ,  B23K35/262 ,  B23K35/34 ,  H01L21/76885 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/81203 ,  H01L2224/81208 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/15311

Abstract: Nano-structured interconnect formation and a reworkable bonding process using solder films. Large area fabrication of nano-structured interconnects is demonstrated at a very fine pitch. This technology can be used for pushing the limits of current flip chip bonding in terms of pitch, number of I/Os, superior combination of electrical and mechanical properties as well as reworkability. Sol-gel and electroless processes were developed to demonstrate film bonding interfaces between metallic pads and nano interconnects. Solution-derived nano-solder technology is an attractive low-cost method for several applications such as MEMS hermetic packaging, compliant interconnect bonding and bump-less nano-interconnects.

Abstract translation: 纳米结构的互连结构和使用焊料薄膜的可再结合的焊接工艺。 纳米结构互连的大面积制造以非常细的间距示出。 该技术可用于推动当前倒装芯片接合的极限，其间距，I / O数量，电气和机械性能的优异组合以及可再加工性。 开发了溶胶 - 凝胶和无电工艺，以证明金属焊盘和纳米互连之间的膜结合界面。 解决方案衍生的纳米焊料技术是MEMS密封封装，兼容互连接合和无凸点纳米互连等多种应用的有吸引力的低成本方法。