公开(公告)号：US20090111808A1

公开(公告)日：2009-04-30

申请号：US11912816

申请日：2006-04-25

Applicant: Isabelle Bertrand ,  Marc Capet ,  Jeanne-Marie Lecomte ,  Nicolas Levoin ,  Xavier Ligneau ,  Olivia Poupardin-Olivier ,  Philippe Robert ,  Jean-Charles Schwartz ,  Olivier Labeeuw

Inventor： Isabelle Bertrand ,  Marc Capet ,  Jeanne-Marie Lecomte ,  Nicolas Levoin ,  Xavier Ligneau ,  Olivia Poupardin-Olivier ,  Philippe Robert ,  Jean-Charles Schwartz ,  Olivier Labeeuw

IPC: A61K31/5377 ,  C07D401/12 ,  A61K31/4545 ,  C07D207/04 ,  A61K31/40 ,  C07D211/20 ,  A61K31/445 ,  A61K31/496 ,  C07D413/12

CPC classification number: C07D213/30 ,  C07D207/20 ,  C07D207/30 ,  C07D207/335 ,  C07D211/22 ,  C07D211/42 ,  C07D211/46 ,  C07D211/68 ,  C07D211/70 ,  C07D213/61 ,  C07D213/64 ,  C07D213/89 ,  C07D231/12 ,  C07D295/088 ,  C07D295/192 ,  C07D333/16 ,  C07D333/20 ,  C07D401/12 ,  C07D401/14 ,  C07D409/12 ,  C07D413/12

Abstract: The present patent application concerns compounds of formula (I) with R1 and R2 taken together with the nitrogen atom to which they are attached, form a mono or bicyclic saturated nitrogen-containing ring; their preparation and their use as a H3 receptor ligand for treating e.g. CNS disorders like Alzheimer's disease.

Abstract translation: 本发明涉及式（I）化合物，其中R 1和R 2与它们所连接的氮原子一起形成单或双环饱和含氮环; 它们的制备及其作为H3受体配体的用途，用于治疗例如 中枢神经系统疾病如阿尔茨海默病。

公开(公告)号：US20080182876A1

公开(公告)日：2008-07-31

申请号：US11912812

申请日：2006-04-26

Applicant: Isabelle Bertrand ,  Marc Capet ,  Jeanne-Marie Lecomte ,  Nicolas Levoin ,  Xavier Ligneau ,  Olivia Poupardin-Olivier ,  Philippe Robert ,  Jean-Charles Schwartz

Inventor： Isabelle Bertrand ,  Marc Capet ,  Jeanne-Marie Lecomte ,  Nicolas Levoin ,  Xavier Ligneau ,  Olivia Poupardin-Olivier ,  Philippe Robert ,  Jean-Charles Schwartz

IPC: A61K31/40 ,  C07D207/04 ,  A61K31/4025 ,  A61K31/4453 ,  A61K31/453 ,  C07D211/20 ,  C07D407/12 ,  A61P25/00

CPC classification number: C07D295/088 ,  C07D307/79 ,  C07D317/54 ,  C07D319/18

Abstract: The present patent application concerns new compounds of formula (I) with R1 and R2 taken together with the nitrogen atom to which they are attached, form a saturated nitrogen-containing ring, A is a saturated C1-4 alkylene and B a C3-4 alkylene or alkenylene chain; their preparation and their use as a H3 receptor ligand for treating e.g. CNS disorders like Alzheimer's disease.

Abstract translation: 本专利申请涉及具有R 1和R 2的新的式（I）化合物与它们所连接的氮原子一起形成饱和含氮的 环，A是饱和C 1-4亚烷基和B a C 3-4亚烷基或亚烯基链; 它们的制备及其作为H3受体配体的用途，用于治疗例如 中枢神经系统疾病如阿尔茨海默病。

公开(公告)号：US08076329B2

公开(公告)日：2011-12-13

申请号：US11912816

申请日：2006-04-25

Applicant: Isabelle Bertrand ,  Marc Capet ,  Jeanne-Marie Lecomte ,  Nicolas Levoin ,  Xavier Ligneau ,  Olivia Poupardin-Olivier ,  Philippe Robert ,  Jean-Charles Schwartz ,  Olivier Labeeuw

Inventor： Isabelle Bertrand ,  Marc Capet ,  Jeanne-Marie Lecomte ,  Nicolas Levoin ,  Xavier Ligneau ,  Olivia Poupardin-Olivier ,  Philippe Robert ,  Jean-Charles Schwartz ,  Olivier Labeeuw

IPC: A61K31/4418 ,  A61K31/4453 ,  A61K31/4545 ,  A61K31/5355 ,  C07D213/30 ,  C07D211/14 ,  C07D413/12

CPC classification number: C07D213/30 ,  C07D207/20 ,  C07D207/30 ,  C07D207/335 ,  C07D211/22 ,  C07D211/42 ,  C07D211/46 ,  C07D211/68 ,  C07D211/70 ,  C07D213/61 ,  C07D213/64 ,  C07D213/89 ,  C07D231/12 ,  C07D295/088 ,  C07D295/192 ,  C07D333/16 ,  C07D333/20 ,  C07D401/12 ,  C07D401/14 ,  C07D409/12 ,  C07D413/12

Abstract: The present patent application concerns compounds of formula (I) with R1 and R2 taken together with the nitrogen atom to which they are attached, form a mono or bicyclic saturated nitrogen-containing ring; their preparation and their use as a H3 receptor ligand for treating e.g. CNS disorders like Alzheimer's disease.

Abstract translation: 本发明涉及式（I）化合物，其中R 1和R 2与它们所连接的氮原子一起形成单或双环饱和含氮环; 它们的制备及其作为H3受体配体的用途，用于治疗例如 中枢神经系统疾病如阿尔茨海默病。

公开(公告)号：US08017646B2

公开(公告)日：2011-09-13

申请号：US11912812

申请日：2006-04-26

Applicant: Isabelle Bertrand ,  Marc Capet ,  Jeanne-Marie Lecomte ,  Nicolas Levoin ,  Xavier Ligneau ,  Olivia Poupardin-Olivier ,  Philippe Robert ,  Jean-Charles Schwartz

Inventor： Isabelle Bertrand ,  Marc Capet ,  Jeanne-Marie Lecomte ,  Nicolas Levoin ,  Xavier Ligneau ,  Olivia Poupardin-Olivier ,  Philippe Robert ,  Jean-Charles Schwartz

IPC: A61K31/40 ,  C07D207/08

CPC classification number: C07D295/088 ,  C07D307/79 ,  C07D317/54 ,  C07D319/18

Abstract: The present patent application concerns new compounds of formula (I) with R1 and R2 taken together with the nitrogen atom to which they are attached, form a saturated nitrogen-containing ring, A is a saturated C1-4 alkylene and B a C3-4 alkylene or alkenylene chain; their preparation and their use as a H3 receptor ligand for treating e.g. CNS disorders like Alzheimer's disease.

Abstract translation: 本发明涉及新的式（I）化合物，其中R 1和R 2与它们所连接的氮原子一起形成饱和含氮环，A是饱和C 1-4亚烷基和B a C 3-4 亚烷基或亚烯基链; 它们的制备及其作为H3受体配体的用途，用于治疗例如 中枢神经系统疾病如阿尔茨海默病。

公开(公告)号：US20080213981A1

公开(公告)日：2008-09-04

申请号：US11815176

申请日：2005-01-31

Applicant: Philippe Renaud ,  Isabelle Bertrand

Inventor： Philippe Renaud ,  Isabelle Bertrand

IPC: H01L21/20

CPC classification number: B81C1/00611 ,  B81C2201/0119 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02667

Abstract: In the field of sensor fabrication, it is known to form a silicon-on-insulator starting structure from which fabrication of the sensor based. The present invention provides a method of forming a silicon-on-insulator structure comprising a substrate having an insulating layer patterned thereon. A silicon oxide layer is then deposited over the patterned insulating layer before silicon is grown over both an exposed surface of the substrate as well as the silicon oxide layer, mono-crystalline silicon forming on the exposed parts of the substrate and polysilicon forming on the silicon oxide layer. After depositing a capping layer over the structure, the wafer is heated, whereby the polysilicon re-crystallises to form mono-crystalline silicon, resulting in the insulating layer being buried beneath mono-crystalline silicon.

Abstract translation: 在传感器制造领域中，已知形成绝缘体上硅启动结构，从而制造基于传感器的开关结构。 本发明提供一种形成绝缘体上硅结构的方法，该方法包括在其上构图绝缘层的衬底。 然后在硅在衬底的暴露表面上生长硅以及氧化硅层，在衬底的暴露部分上形成的单晶硅和在硅上形成的多晶硅之后，在图案化的绝缘层上沉积氧化硅层 氧化层。 在结构上沉积覆盖层之后，加热晶片，由此多晶硅再结晶以形成单晶硅，导致绝缘层被埋在单晶硅之下。