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公开(公告)号：US20140122947A1
公开(公告)日：2014-05-01
申请号：US13664153
申请日：2012-10-30
Applicant: Keith A. Bowman , James W. Tschanz , Nam Sung Kim , Janice C. Lee , Christopher B. Wilkerson , Shih-Lien L. Lu , Tanay Karnik , Vivek K. De
Inventor： Keith A. Bowman , James W. Tschanz , Nam Sung Kim , Janice C. Lee , Christopher B. Wilkerson , Shih-Lien L. Lu , Tanay Karnik , Vivek K. De
CPC classification number: G01R31/3177 , G01R31/31723 , G01R31/31725 , G01R31/31727 , G06F1/10 , G06F11/0706 , G06F11/0757 , G06F11/0793 , H03K3/0375
Abstract: Sequential circuits with error-detection are provided. They may, for example, be used to replace traditional master-slave flip-flops, e.g., in critical path circuits to detect and initiate correction of late transitions at the input of the sequential. In some embodiments, such sequentials may comprise a transition detector with a time borrowing latch.
Abstract translation: 提供了具有错误检测的顺序电路。 例如，它们可以用于替代传统的主从触发器，例如在关键路径电路中，以检测并启动在顺序输入处的后期转换的校正。 在一些实施例中，这样的顺序可以包括具有时间借用锁存器的转换检测器。
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Patent Agency Ranking
公开(公告)号：US07787292B2
公开(公告)日：2010-08-31
申请号：US11824321
申请日：2007-06-29
Applicant: Ali Keshavarzi , Juanita Kurtin , Janice C. Lee , Vivek De , Tanay Karnik , Timothy L. Deeter
Inventor： Ali Keshavarzi , Juanita Kurtin , Janice C. Lee , Vivek De , Tanay Karnik , Timothy L. Deeter
IPC: G11C11/34
CPC classification number: G11C17/16 , B82Y10/00 , G11C13/025 , G11C17/165 , G11C2213/17 , H01L23/5256 , H01L27/101 , H01L2924/0002 , H01L2924/00
Abstract: In one embodiment of the invention, a fuse element for a one time programmable memory may include carbon nanotubes coupled to a first transistor node and to a second transistor node. The carbon nanotubes may have a first resistance which may be changed upon programming the memory cell with low current levels.
Abstract translation: 在本发明的一个实施例中，用于一次可编程存储器的熔丝元件可以包括耦合到第一晶体管节点和第二晶体管节点的碳纳米管。 碳纳米管可以具有在以低电流水平编程存储器单元时可以改变的第一电阻。
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公开(公告)号：US09189014B2
公开(公告)日：2015-11-17
申请号：US13664153
申请日：2012-10-30
Applicant: Keith A. Bowman , James W. Tschanz , Nam Sung Kim , Janice C. Lee , Christopher B. Wilkerson , Shih-Lien L. Lu , Tanay Karnik , Vivek K. De
Inventor： Keith A. Bowman , James W. Tschanz , Nam Sung Kim , Janice C. Lee , Christopher B. Wilkerson , Shih-Lien L. Lu , Tanay Karnik , Vivek K. De
IPC: G06F11/07 , G06F1/08 , G06F1/10 , H03K3/037 , G01R31/317
CPC classification number: G01R31/3177 , G01R31/31723 , G01R31/31725 , G01R31/31727 , G06F1/10 , G06F11/0706 , G06F11/0757 , G06F11/0793 , H03K3/0375
Abstract: Sequential circuits with error-detection are provided. They may, for example, be used to replace traditional master-slave flip-flops, e.g., in critical path circuits to detect and initiate correction of late transitions at the input of the sequential. In some embodiments, such sequentials may comprise a transition detector with a time borrowing latch.
Abstract translation: 提供了具有错误检测的顺序电路。 例如，它们可以用于替代传统的主从触发器，例如在关键路径电路中，以检测并启动在顺序输入处的后期转换的校正。 在一些实施例中，这样的顺序可以包括具有时间借用锁存器的转换检测器。
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公开(公告)号：US08629411B2
公开(公告)日：2014-01-14
申请号：US13181724
申请日：2011-07-13
Applicant: Markus E. Beck , Janice C. Lee , Erel Milshtein
Inventor： Markus E. Beck , Janice C. Lee , Erel Milshtein
IPC: G01J1/58 , G01R31/265
CPC classification number: G01N21/6489 , G01N2021/646 , G01N2021/6484 , G01N2201/1211
Abstract: This invention relates to temperature-corrected photoluminescence spectroscopy which may be applied to semiconductors and, in particular, photovoltaic films.
Abstract translation: 本发明涉及可应用于半导体，特别是光伏膜的温度校正光致发光光谱。
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公开(公告)号：US20120012756A1
公开(公告)日：2012-01-19
申请号：US13181724
申请日：2011-07-13
Applicant: Markus E. Beck , Janice C. Lee , Erel Milshtein
Inventor： Markus E. Beck , Janice C. Lee , Erel Milshtein
IPC: G01N21/64
CPC classification number: G01N21/6489 , G01N2021/646 , G01N2021/6484 , G01N2201/1211
Abstract: This invention relates to temperature-corrected photoluminescence spectroscopy which may be applied to semiconductors and, in particular, photovoltaic films.
Abstract translation: 本发明涉及可应用于半导体，特别是光伏膜的温度校正光致发光光谱。
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公开(公告)号：US20090003028A1
公开(公告)日：2009-01-01
申请号：US11824321
申请日：2007-06-29
Applicant: Ali Keshavarzi , Juanita Kurtin , Janice C. Lee , Vivek De , Tanay Karnik , Timothy L. Deeter
Inventor： Ali Keshavarzi , Juanita Kurtin , Janice C. Lee , Vivek De , Tanay Karnik , Timothy L. Deeter
CPC classification number: G11C17/16 , B82Y10/00 , G11C13/025 , G11C17/165 , G11C2213/17 , H01L23/5256 , H01L27/101 , H01L2924/0002 , H01L2924/00
Abstract: In one embodiment of the invention, a fuse element for a one time programmable memory may include carbon nanotubes coupled to a first transistor node and to a second transistor node. The carbon nanotubes may have a first resistance which may be changed upon programming the memory cell with low current levels.
Abstract translation: 在本发明的一个实施例中，用于一次可编程存储器的熔丝元件可以包括耦合到第一晶体管节点和第二晶体管节点的碳纳米管。 碳纳米管可以具有在以低电流水平编程存储器单元时可以改变的第一电阻。
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