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    Iron-sulfide redox flow batteries
    3.
    发明授权
    Iron-sulfide redox flow batteries 有权
    硫化铁氧化还原液电池

    公开(公告)号：US08609270B2

    公开(公告)日：2013-12-17

    申请号：US13071688

    申请日：2011-03-25

    申请人： Guan-Guang Xia ,  Zhenguo Yang ,  Liyu Li ,  Soowhan Kim ,  Jun Liu ,  Gordon L. Graff

    发明人： Guan-Guang Xia ,  Zhenguo Yang ,  Liyu Li ,  Soowhan Kim ,  Jun Liu ,  Gordon L. Graff

    IPC分类号： H01M4/36 ,  H01M4/48 ,  H01M4/20

    CPC分类号： H01M8/188 ,  H01M2/1653 ,  H01M4/9083 ,  H01M4/926 ,  H01M4/96 ,  H01M8/18 ,  H01M8/20 ,  Y02E60/528

    摘要： Iron-sulfide redox flow battery (RFB) systems can be advantageous for energy storage, particularly when the electrolytes have pH values greater than 6. Such systems can exhibit excellent energy conversion efficiency and stability and can utilize low-cost materials that are relatively safer and more environmentally friendly. One example of an iron-sulfide RFB is characterized by a positive electrolyte that comprises Fe(III) and/or Fe(II) in a positive electrolyte supporting solution, a negative electrolyte that comprises S2− and/or S in a negative electrolyte supporting solution, and a membrane, or a separator, that separates the positive electrolyte and electrode from the negative electrolyte and electrode.

    摘要翻译： 硫化铁氧化还原液流电池（RFB）系统对于储能可能是有利的，特别是当电解质的pH值大于6时，这种系统可表现出优异的能量转换效率和稳定性，并且可以利用相对更安全的低成本材料， 更环保。 硫化铁RFB的一个实例的特征在于在正电解质支持溶液中包含Fe（III）和/或Fe（II）的正电解质，负电解质，其包含负电解质支持中的S2-和/或S 溶液以及将正电解质和电极与负电解质和电极分离的膜或隔膜。

    Dendrite-Inhibiting Salts in Electrolytes of Energy Storage Devices
    5.
    发明申请
    Dendrite-Inhibiting Salts in Electrolytes of Energy Storage Devices 审中-公开
    储能装置电解液中的树枝状抑制盐

    公开(公告)号：US20130202920A1

    公开(公告)日：2013-08-08

    申请号：US13367508

    申请日：2012-02-07

    申请人： Wu Xu ,  Fei Ding ,  Jiguang Zhang ,  Gordon L. Graff ,  Jie Xiao

    发明人： Wu Xu ,  Fei Ding ,  Jiguang Zhang ,  Gordon L. Graff ,  Jie Xiao

    IPC分类号： H01M10/056

    CPC分类号： H01M10/0568 ,  H01M10/052

    摘要： The performance and the lifetime of energy storage devices can be hindered by the growth of metal dendrites during operation. Electrolytes having dendrite-inhibiting additives can result in significant improvement. In particular, energy storage devices having an electrode containing a metallic element, M1 can be characterized by a non-aqueous, liquid electrolyte having a first salt and a dendrite-inhibiting salt. The first salt can have a cation of M1 and the dendrite-inhibiting salt can have a cation of metallic element, M2, wherein the cation of M2 has an ionic size greater than, or equal to, the cation of M1.

    摘要翻译： 能量储存装置的性能和寿命可能受到金属枝晶在运行过程中生长的阻碍。 具有树突抑制添加剂的电解质可以显着改善。 特别地，具有含有金属元素的电极M1的能量存储装置的特征在于具有第一盐和树枝状抑制盐的非水电解液。 第一盐可以具有M1的阳离子，并且树枝状抑制盐可以具有金属元素的阳离子M2，其中M2的阳离子具有大于或等于M1的阳离子的离子尺寸。

    Method of making an encapsulated plasma sensitive device
    9.
    发明授权
    Method of making an encapsulated plasma sensitive device 有权
    制造封装等离子体敏感器件的方法

    公开(公告)号：US07510913B2

    公开(公告)日：2009-03-31

    申请号：US11439474

    申请日：2006-05-23

    申请人： Lorenza Moro ,  Xi Chu ,  Martin Philip Rosenblum ,  Kenneth Jeffrey Nelson ,  Paul E. Burrows ,  Mark E. Gross ,  Mac R. Zumhoff ,  Peter M. Martin ,  Charles C. Bonham ,  Gordon L. Graff

    发明人： Lorenza Moro ,  Xi Chu ,  Martin Philip Rosenblum ,  Kenneth Jeffrey Nelson ,  Paul E. Burrows ,  Mark E. Gross ,  Mac R. Zumhoff ,  Peter M. Martin ,  Charles C. Bonham ,  Gordon L. Graff

    IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

    CPC分类号： C23C14/0694 ,  H01L51/5256 ,  H01L51/56

    摘要： A method of making an encapsulated plasma sensitive device. The method comprises: providing a plasma sensitive device adjacent to a substrate; depositing a plasma protective layer on the plasma sensitive device using a process selected from non-plasma based processes, or modified sputtering processes; and depositing at least one barrier stack adjacent to the plasma protective layer, the at least one barrier stack comprising at least one decoupling layer and at least one barrier layer, the plasma sensitive device being encapsulated between the substrate and the at least one barrier stack, wherein the decoupling layer, the barrier layer, or both are deposited using a plasma process, the encapsulated plasma sensitive device having a reduced amount of damage caused by the plasma compared to an encapsulated plasma sensitive device made without the plasma protective layer. An encapsulated plasma sensitive device is also described.

    摘要翻译： 一种制造封装等离子体敏感装置的方法。 该方法包括：提供与衬底相邻的等离子体敏感器件; 使用选自非等离子体工艺或改进的溅射工艺的工艺在等离子体敏感器件上沉积等离子体保护层; 以及沉积与所述等离子体保护层相邻的至少一个势垒堆叠，所述至少一个势垒堆叠包括至少一个去耦层和至少一个势垒层，所述等离子体敏感器件封装在所述衬底和所述至少一个阻挡层之间， 其中使用等离子体工艺沉积去耦层，阻挡层或两者，所述封装等离子体敏感器件与不具有等离子体保护层的封装的等离子体感应器件相比，具有由等离子体引起的损伤量减少。 还描述了封装的等离子体敏感器件。