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    Light-emitting device
    1.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08143636B2

    公开(公告)日：2012-03-27

    申请号：US12620305

    申请日：2009-11-17

    申请人： Jin-Ywan Lin ,  Ya-Lang Yang

    发明人： Jin-Ywan Lin ,  Ya-Lang Yang

    IPC分类号： H01L33/00

    CPC分类号： H01L33/42 ,  H01L33/46

    摘要： This application discloses a light-emitting device comprising a light-emitting stack layer, a first transparent conductive layer disposed below the light-emitting stack layer, a transparent dielectric barrier layer disposed below the first transparent conductive layer, a second transparent conductive layer disposed below the transparent dielectric barrier layer and a metal reflective layer disposed below the second transparent conductive layer wherein an omni-directional reflector (ODR) comprises the metal reflective layer and the second transparent conductive layer. Besides, the first transparent conductive layer is ohmically connected with the light-emitting stack layer.

    摘要翻译： 本申请公开了一种发光装置，其包括发光堆叠层，设置在发光堆叠层下方的第一透明导电层，设置在第一透明导电层下方的透明电介质阻挡层，设置在第一透明导电层下方的第二透明导电层 所述透明介电阻挡层和设置在所述第二透明导电层下方的金属反射层，其中全向反射器（ODR）包括所述金属反射层和所述第二透明导电层。 此外，第一透明导电层与发光堆叠层欧姆连接。

    OPTOELECTRONIC DEVICE
    2.
    发明申请
    OPTOELECTRONIC DEVICE 有权
    光电器件

    公开(公告)号：US20100276719A1

    公开(公告)日：2010-11-04

    申请号：US12835066

    申请日：2010-07-13

    申请人： Jin-Ywan LIN ,  Jen-Chau WU ,  Chih-Chiang LU ,  Wei-Chih PENG ,  Ching-Pu TAI ,  Shih-I CHEN

    发明人： Jin-Ywan LIN ,  Jen-Chau WU ,  Chih-Chiang LU ,  Wei-Chih PENG ,  Ching-Pu TAI ,  Shih-I CHEN

    IPC分类号： H01L33/46

    CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/382

    摘要： An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.

    摘要翻译： 公开了诸如发光二极管芯片的光电子器件。 它包括衬底，多层外延结构，第一金属电极层，第二金属电极层，第一焊盘和第二接合焊盘。 透明基板上的多层外延结构包括第一导电类型，有源层和第二导电类型的半导体层的半导体层。 第一接合焊盘和第二接合焊盘在同一水平面上。 此外，第一金属电极层可以被图案化，使得电流均匀地扩散到发光二极管芯片。

    Light-emitting device
    3.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08692273B2

    公开(公告)日：2014-04-08

    申请号：US13429852

    申请日：2012-03-26

    申请人： Jin-Ywan Lin ,  Ya-Lang Yang

    发明人： Jin-Ywan Lin ,  Ya-Lang Yang

    IPC分类号： H01L33/00

    CPC分类号： H01L33/42 ,  H01L33/46

    摘要： The present application is to provide a light-emitting device comprising a metal reflective layer; a first transparent conductive oxide layer having a first refractive index; a second transparent conductive oxide layer having a second refractive index different from the first refractive index, and being between the metal reflective layer and the first transparent conductive oxide layer; and a light-emitting stack layer electrically connected to the second transparent conductive oxide layer substantially through the first transparent conductive layer; wherein there is no light absorbing material between the metal reflective layer and the first transparent conductive oxide layer.

    摘要翻译： 本申请是提供一种包括金属反射层的发光器件; 具有第一折射率的第一透明导电氧化物层; 第二透明导电氧化物层，其具有与第一折射率不同的第二折射率，并且在金属反射层和第一透明导电氧化物层之间; 以及基本上通过第一透明导电层与第二透明导电氧化物层电连接的发光层叠层; 其中在金属反射层和第一透明导电氧化物层之间不存在吸光材料。

    Optoelectronic device
    4.
    发明授权
    Optoelectronic device 有权
    光电器件

    公开(公告)号：US08368094B2

    公开(公告)日：2013-02-05

    申请号：US12813621

    申请日：2010-06-11

    申请人： Min-Hsun Hsieh ,  Chien-Yuan Wang ,  Jin-Ywan Lin ,  Chiu-Lin Yao

    发明人： Min-Hsun Hsieh ,  Chien-Yuan Wang ,  Jin-Ywan Lin ,  Chiu-Lin Yao

    IPC分类号： H01L33/00

    CPC分类号： H01L33/42 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

    摘要： A optoelectronic device comprises a semiconductor stack layer; a first transparent conductive oxide (abbreviate as “TCO” hereinafter) layer located on the semiconductor stack layer, wherein the first TCO layer has at least one opening; and a second TCO layer covering the first TCO layer, wherein the second TCO layer is filled into the opening of the first TCO layer and contacted with the semiconductor stack layer, and one of the first TCO layer and the second TCO layer forms an ohmic contact with the semiconductor stack layer.

    摘要翻译： 光电子器件包括半导体叠层层; 位于半导体堆叠层上的第一透明导电氧化物（以下简称TCO），其中第一TCO层具有至少一个开口; 以及覆盖所述第一TCO层的第二TCO层，其中所述第二TCO层填充到所述第一TCO层的开口中并与所述半导体堆叠层接触，并且所述第一TCO层和所述第二TCO层中的一个形成欧姆接触 与半导体堆叠层。

    Series connection of two light emitting diodes through semiconductor manufacture process
    5.
    再颁专利
    Series connection of two light emitting diodes through semiconductor manufacture process 有权
    通过半导体制造工艺串联两个发光二极管

    公开(公告)号：USRE43411E1

    公开(公告)日：2012-05-29

    申请号：US12071055

    申请日：2008-02-14

    申请人： Jin-Ywan Lin ,  Chuan-Cheng Tu

    发明人： Jin-Ywan Lin ,  Chuan-Cheng Tu

    IPC分类号： H01L27/15 ,  H01L31/12

    CPC分类号： H01L27/153

    摘要： A semiconductor structure with two light emitting diodes in series connection is disclosed. The semiconductor structure comprises two light emitting diodes (LEDs) having the same stack layers and abutting each other but spaced by an isolation trench. The stack layers from a bottom thereof include a thermal conductive substrate, an nonconductive protective layer, a metal adhering layer, a mirror protective layer, a p-type ohmic contact epi-layer, a upper cladding layer, an active layer, and a lower cladding layer. Two p-type ohmic contact metal electrodes for two LEDs are formed on an interface between the mirror protective layer and the ohmic contact epi-layer and buried in the mirror protective layer. The stack layers have first trenches formed therein which exposes the upper cladding layer and electrical connecting channels to connect p-type electrodes. The isolation trench is formed by patterning the exposed upper cladding layer until further exposing the nonconductive protective layer. Two n-type electrodes are formed on the lower cladding layer of two LEDs. A dielectric layer is deposited to fill the isolation trench and covered a sidewall of the first trench so that it can electrically isolate layers of the stack layers of the second LED while a metal connection trace formed thereon to connect the p-type ohmic contact electrode of the first LED and n-type of ohmic electrode of second LED.

    摘要翻译： 公开了具有串联连接的两个发光二极管的半导体结构。 半导体结构包括具有相同叠层的两个发光二极管（LED），并且彼此邻接但隔开隔离沟槽。 来自底部的堆叠层包括导热基板，非导电保护层，金属粘合层，镜保护层，p型欧姆接触外延层，上覆层，有源层和下层 包层 在镜保护层和欧姆接触外延层之间的界面上形成两个用于两个LED的p型欧姆接触金属电极，并被埋在镜保护层中。 堆叠层具有形成在其中的第一沟槽，其暴露上覆层和电连接沟道以连接p型电极。 通过图案化暴露的上覆层形成隔离沟槽，直到进一步暴露非导电保护层。 两个n型电极形成在两个LED的下包层上。 沉积介电层以填充隔离沟槽并且覆盖第一沟槽的侧壁，使得其可以电隔离第二LED的层叠层，同时形成在其上的金属连接迹线以将p型欧姆接触电极 第二个LED的第一个LED和n型欧姆电极。

    Light emitting device and method of forming the same
    7.
    发明申请
    Light emitting device and method of forming the same 有权
    发光元件及其形成方法

    公开(公告)号：US20090200560A1

    公开(公告)日：2009-08-13

    申请号：US12320085

    申请日：2009-01-16

    申请人： Jin-Ywan Lin ,  Chuan-Cheng Tu

    发明人： Jin-Ywan Lin ,  Chuan-Cheng Tu

    IPC分类号： H01L33/00

    CPC分类号： H01L27/153 ,  H01L33/0079 ,  H01L33/382

    摘要： An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate.

    摘要翻译： 本发明的实施例公开了一种包括第一多层结构的发光器件，包括第一下层; 第一上层; 以及第一有源层，其能够在偏置电压下发光并且定位在所述第一下层和所述第一上层之间; 与所述第一多层结构相邻的第二厚层; 与第二厚层相关联的第二连接层; 电连接到第二连接层和第一多层结构的连接线; 底物; 以及在第一多层结构和衬底之间的两个或更多个欧姆接触电极。

    Series connection of two light emitting diodes through semiconductor manufacture process
    8.
    发明申请
    Series connection of two light emitting diodes through semiconductor manufacture process 有权
    通过半导体制造工艺串联两个发光二极管

    公开(公告)号：US20050062049A1

    公开(公告)日：2005-03-24

    申请号：US10878359

    申请日：2004-06-29

    申请人： Jin-Ywan Lin ,  Chung-Cheng Tu

    发明人： Jin-Ywan Lin ,  Chung-Cheng Tu

    IPC分类号： H01L27/15 ,  H01L33/08 ,  H01L33/30

    CPC分类号： H01L27/153

    摘要： A semiconductor structure with two light emitting diodes in series connection is disclosed. The semiconductor structure comprises two light emitting diodes (LEDs) having the same stack layers and abutting each other but spaced by an isolation trench. The stack layers from a bottom thereof include a thermal conductive substrate, an nonconductive protective layer, a metal adhering layer, a mirror protective layer, a p-type ohmic contact epi-layer, a upper cladding layer, an active layer, and a lower cladding layer. Two p-type ohmic contact metal electrodes for two LEDs are formed on an interface between the mirror protective layer and the ohmic contact epi-layer and buried in the mirror protective layer. The stack layers have first trenches formed therein which exposes the upper cladding layer and electrical connecting channels to connect p-type electrodes. The isolation trench is formed by patterning the exposed upper cladding layer until further exposing the nonconductive protective layer. Two n-type electrodes are formed on the lower cladding layer of two LEDs. A dielectric layer is deposited to fill the isolation trench and covered a sidewall of the first trench so that it can electrically isolate layers of the stack layers of the second LED while a metal connection trace formed thereon to connect the p-type ohmic contact electrode of the first LED and n-type of ohmic electrode of second LED.

    摘要翻译： 公开了具有串联连接的两个发光二极管的半导体结构。 半导体结构包括具有相同叠层的两个发光二极管（LED），并且彼此邻接但隔开隔离沟槽。 来自底部的堆叠层包括导热基板，非导电保护层，金属粘合层，镜保护层，p型欧姆接触外延层，上覆层，有源层和下层 包层 在镜保护层和欧姆接触外延层之间的界面上形成两个用于两个LED的p型欧姆接触金属电极，并被埋在镜保护层中。 堆叠层具有形成在其中的第一沟槽，其暴露上覆层和电连接沟道以连接p型电极。 通过图案化暴露的上覆层形成隔离沟槽，直到进一步暴露非导电保护层。 两个n型电极形成在两个LED的下包层上。 沉积介电层以填充隔离沟槽并且覆盖第一沟槽的侧壁，使得其可以电隔离第二LED的层叠层，同时形成在其上的金属连接迹线以将p型欧姆接触电极 第二个LED的第一个LED和n型欧姆电极。

    Light-emitting structure
    9.
    发明授权
    Light-emitting structure 有权
    发光结构

    公开(公告)号：US09257622B2

    公开(公告)日：2016-02-09

    申请号：US14252439

    申请日：2014-04-14

    申请人： Jin-Ywan Lin

    发明人： Jin-Ywan Lin

    IPC分类号： H01L33/00 ,  H01L33/62 ,  H01L33/38 ,  H01L33/32 ,  H01L33/22

    CPC分类号： H01L33/62 ,  H01L33/22 ,  H01L33/32 ,  H01L33/387 ,  H01L33/641

    摘要： A light-emitting structure includes a package substrate and a light emitter disposed on the package substrate. The package substrate includes a carrier substrate and a plurality of metal units disposed on the carrier substrate. A distance between two arbitrary points on a periphery of the metal unit is defined as a peripheral endpoint distance. The light emitter includes a first electrical metal and a second electrical metal that have different electrical polarities and are separate from each other. A shortest distance between the first electrical metal and the second electrical metal is defined as an electrical metal interval. The electrical metal interval between the first electrical metal and the second electrical metal is greater than the longest peripheral endpoint distance of the metal unit.

    摘要翻译： 发光结构包括封装基板和布置在封装基板上的发光体。 封装衬底包括载体衬底和布置在载体衬底上的多个金属单元。 将金属单元的周边上的两个任意点之间的距离定义为外围端点距离。 光发射器包括具有不同电极性并且彼此分开的第一电金属和第二电金属。 第一电金属和第二电金属之间的最短距离被定义为电金属间隔。 第一电金属和第二电金属之间的电金属间隔大于金属单元的最长周边端点距离。