公开(公告)号：US09000461B2

公开(公告)日：2015-04-07

申请号：US13205987

申请日：2011-08-09

申请人： Cheng-Nan Han ,  Tsung-Xian Lee ,  Min-Hsun Hsieh ,  Hung-Hsuan Chen ,  Hsin-Mao Liu ,  Hsing-Chao Chen ,  Ching-San Tao ,  Chih-Peng Ni ,  Tzer-Perng Chen ,  Jen-Chau Wu

发明人： Cheng-Nan Han ,  Tsung-Xian Lee ,  Min-Hsun Hsieh ,  Hung-Hsuan Chen ,  Hsin-Mao Liu ,  Hsing-Chao Chen ,  Ching-San Tao ,  Chih-Peng Ni ,  Tzer-Perng Chen ,  Jen-Chau Wu

IPC分类号： H01L33/46 ,  H01L33/00 ,  H01L33/20 ,  H01L33/38 ,  H01L33/48 ,  H01L33/58

CPC分类号： H01L33/0079 ,  H01L33/20 ,  H01L33/38 ,  H01L33/46 ,  H01L33/486 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： An optoelectronic element includes an optoelectronic unit having a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface; a first transparent structure covering the lateral surface and exposing the first top surface of the optoelectronic unit; a first insulating layer on the first top surface and the first transparent structure; a second insulating layer on the first insulating layer; a first opening through the first insulating layer and the second insulating layer; and a first conductive layer on the second insulating layer and electrically connecting to the optoelectronic unit via the first opening.

摘要翻译： 光电子元件包括具有第一顶表面，与第一顶表面相对的第一底表面和第一顶表面与第一底表面之间的侧表面的光电单元; 覆盖所述侧表面并暴露所述光电单元的第一顶表面的第一透明结构; 第一顶表面上的第一绝缘层和第一透明结构; 第一绝缘层上的第二绝缘层; 穿过所述第一绝缘层和所述第二绝缘层的第一开口; 以及在所述第二绝缘层上的第一导电层，并且经由所述第一开口电连接到所述光电单元。

公开(公告)号：US20100276719A1

公开(公告)日：2010-11-04

申请号：US12835066

申请日：2010-07-13

申请人： Jin-Ywan LIN ,  Jen-Chau WU ,  Chih-Chiang LU ,  Wei-Chih PENG ,  Ching-Pu TAI ,  Shih-I CHEN

发明人： Jin-Ywan LIN ,  Jen-Chau WU ,  Chih-Chiang LU ,  Wei-Chih PENG ,  Ching-Pu TAI ,  Shih-I CHEN

IPC分类号： H01L33/46

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/382

摘要： An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.

摘要翻译： 公开了诸如发光二极管芯片的光电子器件。 它包括衬底，多层外延结构，第一金属电极层，第二金属电极层，第一焊盘和第二接合焊盘。 透明基板上的多层外延结构包括第一导电类型，有源层和第二导电类型的半导体层的半导体层。 第一接合焊盘和第二接合焊盘在同一水平面上。 此外，第一金属电极层可以被图案化，使得电流均匀地扩散到发光二极管芯片。

公开(公告)号：US07435604B2

公开(公告)日：2008-10-14

申请号：US10957738

申请日：2004-10-04

申请人： Chuan-Cheng Tu ,  Pao-I Huang ,  Jen-Chau Wu

发明人： Chuan-Cheng Tu ,  Pao-I Huang ,  Jen-Chau Wu

IPC分类号： H01L21/00

CPC分类号： H01L33/22

摘要： A method of making a light emitting diode (LED) is disclosed. The LED of the present invention comprises a semiconductor layer of a first polarity, an active layer, and a semiconductor layer of a second polarity stacked from bottom to up, wherein a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity have a side with a wave-shape border in a top view of the LED and/or at least one valley, thereby increasing the efficiency of emitting the light to the outside of the LED.

摘要翻译： 公开了一种制造发光二极管（LED）的方法。 本发明的LED包括第一极性的半导体层，有源层和从底部至上层叠的第二极性的半导体层，其中至少由有源层和半导体层组成的层叠结构 第二极性在LED和/或至少一个谷的俯视图中具有波形边界的一侧，从而提高将光发射到LED的外部的效率。

公开(公告)号：US07391061B2

公开(公告)日：2008-06-24

申请号：US11316461

申请日：2005-12-22

申请人： Yuh-Ren Shieh ,  Jen-Chau Wu ,  Chuan-Cheng Tu

发明人： Yuh-Ren Shieh ,  Jen-Chau Wu ,  Chuan-Cheng Tu

IPC分类号： H01L23/373

CPC分类号： H01L33/0079 ,  H01L33/382 ,  H01L33/641

摘要： A light emitting diode and the method of the same are provided. The light emitting diode includes a substrate, a thermal spreading layer, a connecting layer and an epitaxial structure. The substrate is selected from a transparent substrate or a non-transparent substrate, which corresponds to different materials of the connecting layers respectively. The thermal spreading layer, configured to improve the thermal conduction of the light emitting diode, is selected from diamond, impurity-doped diamond or diamond-like materials.

摘要翻译： 提供一种发光二极管及其制造方法。 发光二极管包括衬底，热扩散层，连接层和外延结构。 基板选自透明基板或非透明基板，其分别对应于连接层的不同材料。 被配置为改善发光二极管的热传导的热扩散层选自金刚石，杂质掺杂的金刚石或类金刚石材料。

公开(公告)号：US20070278496A1

公开(公告)日：2007-12-06

申请号：US11733778

申请日：2007-04-11

申请人： Yuh-Ren Shieh ,  Chuan-Cheng Tu ,  Jen-Chau Wu

发明人： Yuh-Ren Shieh ,  Chuan-Cheng Tu ,  Jen-Chau Wu

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/10 ,  H01L33/30 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light emitting diode is disclosed. The light emitting diode includes a substrate, a thermal spreading layer disposed on the bottom of the substrate, a soldering layer disposed on the bottom of the thermal spreading layer, a barrier layer disposed between the thermal spreading layer and the soldering layer, and a light emitting layer disposed on top of the substrate.

摘要翻译： 公开了一种发光二极管。 发光二极管包括基板，设置在基板底部的热扩散层，设置在热扩散层底部的焊接层，设置在热扩散层和焊接层之间的阻挡层，以及光 发光层设置在基板的顶部。

公开(公告)号：US20060249740A1

公开(公告)日：2006-11-09

申请号：US11481833

申请日：2006-07-07

申请人： Tzu-Ying Yen ,  Han-Tsun Lai ,  Jen-Chau Wu ,  Chung-Cheng Tu

发明人： Tzu-Ying Yen ,  Han-Tsun Lai ,  Jen-Chau Wu ,  Chung-Cheng Tu

IPC分类号： H01L33/00

CPC分类号： H01L33/38

摘要： A point source light emitting-diode (LED) comprises a substrate, an epitaxy structure, a first electrode, an isolation layer, a bonding layer, a contact layer, and a connection bridge. The epitaxy structure is located on the substrate, and the substrate has a pattern including a light emitting area located on the light-emitting surface of the epitaxy structure. The first electrode is located on the substrate, and the isolation layer is located on the epitaxy structure adjacent to the first electrode. The contact layer is located on the first electrode, and the bonding layer is located on one portion of the isolation layer. The connection bridge with a width less than one half of the diameter of the light emitting area is located on the other portion of the isolation layer, thereby connecting the contact layer and the bonding layer.

公开(公告)号：US07087931B2

公开(公告)日：2006-08-08

申请号：US10953983

申请日：2004-09-28

申请人： Jen-Chau Wu ,  Chung-Cheng Tu ,  Pao-i Huang

发明人： Jen-Chau Wu ,  Chung-Cheng Tu ,  Pao-i Huang

IPC分类号： H01L29/267

CPC分类号： H01L33/32 ,  H01L33/14

摘要： A high luminance indium gallium aluminum nitride light emitting diode (LED) is disclosed, including a substrate, a first conductive type nitride layer, an active layer, a second conductive type nitride layer, a first contact layer, a second contact layer, and a conductive transparent layer. The first contact layer has a first bandgap and a first doping concentration, and is disposed on the second conductive type nitride layer. The second contact layer has a second bandgap and a second doping concentration, and is disposed on the first contact layer. The first doping concentration and the second doping concentration are respectively larger than a predetermined concentration, and the first bandgap is smaller than the second bandgap. The second contact layer is thinner than a predetermined thickness so that a tunneling effect occurs between the conductive transparent layer and the second contact layer while the LED is in operation.

摘要翻译： 公开了一种高亮度铟镓铝氮化物发光二极管（LED），包括基板，第一导电型氮化物层，有源层，第二导电氮化物层，第一接触层，第二接触层和 导电透明层。 第一接触层具有第一带隙和第一掺杂浓度，并且设置在第二导电型氮化物层上。 第二接触层具有第二带隙和第二掺杂浓度，并且设置在第一接触层上。 第一掺杂浓度和第二掺杂浓度分别大于预定浓度，并且第一带隙小于第二带隙。 第二接触层比预定厚度薄，使得在LED处于工作状态时，在导电透明层和第二接触层之间产生隧道效应。

公开(公告)号：US5969471A

公开(公告)日：1999-10-19

申请号：US604477

申请日：1996-02-21

申请人： Lyuji Ozawa ,  Hsien Nan Ho ,  Jiin-Long Lin ,  Jen-Chau Wu

发明人： Lyuji Ozawa ,  Hsien Nan Ho ,  Jiin-Long Lin ,  Jen-Chau Wu

IPC分类号： H01J29/48 ,  H01J29/46 ,  H01J29/50

CPC分类号： H01J29/485

摘要： A one-piece grid assembly for use in an electron gun for a miniature cathode-ray tube application that consists of a core made of an electrically insulating material, a first grid deposited on the core, and a second grid deposited on the core that is spaced apart from the first grid, and a method of making the one-piece grid assembly by first compression molding the core and then depositing the grid by plating are disclosed.

摘要翻译： 一种用于用于微型阴极射​​线管应用的电子枪的单件格栅组件，其由由电绝缘材料制成的芯，沉积在芯上的第一栅格和沉积在芯上的第二栅极组成， 与第一格栅间隔开，并且公开了通过首先压缩成型芯并且然后通过电镀沉积栅格来制造单件格栅组件的方法。

公开(公告)号：US5446426A

公开(公告)日：1995-08-29

申请号：US365050

申请日：1994-12-27

申请人： Jen-chau Wu ,  Chi-Nan Chen

发明人： Jen-chau Wu ,  Chi-Nan Chen

IPC分类号： H01P5/12 ,  H03F3/60

CPC分类号： H01P5/12

摘要： A microwave power combiner is formed in a cylindrical hollow metallic housing utilizing a number of pie shaped chambers formed with metallic vanes attached to and extending radially inward from the interior sidewalls of the cylindrical hollow metallic housing. Individual microwave power sources exterior to the cylindrical hollow metallic housing transmit energy into the pie shaped chambers. Two ring shaped metallic vane straps are used to control impedance mismatches and the resonant frequency of the microwave power combiner. The microwave power from the individual microwave power sources combine in the cylindrical hollow metallic housing and is extracted through the circular top of the cylindrical hollow metallic housing by means of a waveguide or a transmission line. The individual microwave power sources can be replaced as needed without affecting impedance matching or the efficiency of power transfer. There is flexibility in the number of individual microwave power sources used.

摘要翻译： 微波功率组合器形成在圆柱形空心金属壳体中，利用多个饼状室，其形成有金属叶片，金属叶片从圆柱形中空金属壳体的内侧壁附接并径向向内延伸。 圆柱形中空金属外壳外部的单个微波电源将能量传递到饼形腔。 两个环形金属叶片带用于控制微波功率组合器的阻抗失配和谐振频率。 来自各个微波功率源的微波功率结合在圆柱形空心金属壳体中，并通过波导或传输线从圆柱形中空金属壳体的圆形顶部提取。 单个微波功率源可以根据需要进行更换，而不影响阻抗匹配或功率传输效率。 使用的各个微波功率源的数量有灵活性。

公开(公告)号：US08049242B2

公开(公告)日：2011-11-01

申请号：US12835066

申请日：2010-07-13

申请人： Jin-Ywan Lin ,  Jen-Chau Wu ,  Chih-Chiang Lu ,  Wei-Chih Peng ,  Ching-Pu Tai ,  Shih-I Chen

发明人： Jin-Ywan Lin ,  Jen-Chau Wu ,  Chih-Chiang Lu ,  Wei-Chih Peng ,  Ching-Pu Tai ,  Shih-I Chen

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/382

摘要： An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.

摘要翻译： 公开了诸如发光二极管芯片的光电子器件。 它包括衬底，多层外延结构，第一金属电极层，第二金属电极层，第一焊盘和第二接合焊盘。 透明基板上的多层外延结构包括第一导电类型，有源层和第二导电类型的半导体层的半导体层。 第一接合焊盘和第二接合焊盘在同一水平面上。 此外，第一金属电极层可以被图案化，使得电流均匀地扩散到发光二极管芯片。