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26 条记录 (耗时 0.015 秒)

    Driver circuit
    2.
    发明授权
    Driver circuit 有权
    驱动电路

    公开(公告)号：US07323923B2

    公开(公告)日：2008-01-29

    申请号：US11211638

    申请日：2005-08-26

    申请人： Eisaku Maeda ,  Hiroshi Ando ,  Jinsaku Kaneda ,  Akihiro Maejima ,  Hiroki Matsunaga

    发明人： Eisaku Maeda ,  Hiroshi Ando ,  Jinsaku Kaneda ,  Akihiro Maejima ,  Hiroki Matsunaga

    IPC分类号： H03L5/00

    CPC分类号： H03K3/356113 ,  G09G3/296 ,  G09G2330/04 ,  H03K3/012 ,  H03K19/0013

    摘要： A driver circuit is provided for preventing generation of a pass-through current in a CMOS output unit even if a power supply voltage VDD supplied from a low voltage power supply drops below a recommended operating power supply voltage. The driver circuit includes a level shift unit having PMOS transistors and NMOS transistors, and a CMOS output unit having a PMOS transistor and an NMOS transistor. The source, drain and gate of one PMOS transistor are respectively connected to a high voltage power supply, a first contact and a second contact. The source, drain and gate of a second PMOS transistor are respectively connected to a high voltage power supply, the second contact and the first contact. The source of one NMOS transistor is grounded, the drain thereof is connected to the first contact, and the gate thereof receives a low voltage signal. The source of a second NMOS transistor is grounded, the drain thereof is connected to the second contact, and the gate thereof receives a low voltage signal. In this driver circuit, the driving current of the one PMOS transistor is higher than the driving current of the one NMOS transistor.

    摘要翻译： 即使从低电压电源提供的电源电压VDD低于推荐的工作电源电压，也提供用于防止在CMOS输出单元中产生通过电流的驱动电路。 驱动器电路包括具有PMOS晶体管和NMOS晶体管的电平移位单元和具有PMOS晶体管和NMOS晶体管的CMOS输出单元。 一个PMOS晶体管的源极，漏极和栅极分别连接到高压电源，第一触点和第二触点。 第二PMOS晶体管的源极，漏极和栅极分别连接到高压电源，第二触点和第一触点。 一个NMOS晶体管的源极接地，其漏极连接到第一触点，其栅极接收低电压信号。 第二NMOS晶体管的源极接地，其漏极连接到第二触点，并且其栅极接收低电压信号。 在该驱动电路中，一个PMOS晶体管的驱动电流高于一个NMOS晶体管的驱动电流。

    Sustain driver, sustain control system, and display device
    4.
    发明授权
    Sustain driver, sustain control system, and display device 有权
    维持驱动器，维持控制系统和显示设备

    公开(公告)号：US07969429B2

    公开(公告)日：2011-06-28

    申请号：US11941240

    申请日：2007-11-16

    申请人： Masahiko Sasada ,  Hiroki Matsunaga ,  Masashi Inao ,  Hiroshi Ando ,  Jinsaku Kaneda ,  Eisaku Maeda ,  Akihiro Maejima

    发明人： Masahiko Sasada ,  Hiroki Matsunaga ,  Masashi Inao ,  Hiroshi Ando ,  Jinsaku Kaneda ,  Eisaku Maeda ,  Akihiro Maejima

    IPC分类号： H01L29/739 ,  H01L31/00 ,  H03F3/16 ,  G09G3/28 ,  G09G5/00 ,  G06F3/038 ,  H01L27/10 ,  H01L29/73 ,  H03F3/04 ,  G09G3/20

    CPC分类号： G09G3/296 ,  G09G3/282 ,  G09G3/294 ,  G09G2300/0408 ,  G09G2310/0289 ,  G09G2330/04

    摘要： The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.

    摘要翻译： 双极晶体管电路的集电极，发射极和基极分别连接到高侧电源端子，电平移位晶体管的漏极和浮动电源端子。 当高边输出晶体管导通时，浮动电源端子处于高电位电源端子的电位。 高侧电源端子通过恒定电压处于高于浮动电源端子的电位的电位。 开启电平移位晶体管时，其漏极电位降低到浮动电源端子的电位以下; 基极电流流过双极晶体管电路，电平移位晶体管的漏极电压钳位在浮动电源端子的电位附近; 双极晶体管电路导通，其集电极电流提供电平移位晶体管的漏极电流。

    Circuit for generating ternary signal
    6.
    发明授权
    Circuit for generating ternary signal 失效
    用于产生三态信号的电路

    公开(公告)号：US07469016B2

    公开(公告)日：2008-12-23

    申请号：US11290062

    申请日：2005-11-30

    申请人： Jinsaku Kaneda ,  Akihiro Maejima ,  Hiroki Matsunaga ,  Eisaku Maeda ,  Hiroshi Ando

    发明人： Jinsaku Kaneda ,  Akihiro Maejima ,  Hiroki Matsunaga ,  Eisaku Maeda ,  Hiroshi Ando

    IPC分类号： H04L25/34

    CPC分类号： H03K3/00 ,  H03K17/00 ,  H03K17/693

    摘要： A circuit for generating a ternary signal that receives a binary input-control signal and a binary reset signal and outputs a ternary signal. The circuit includes first to third transistors, each source terminal thereof is respectively connected to the three power supplies, and a sequential circuit that outputs control signals controlling the transistors. The sequential circuit outputs control signals that make the first and the third transistors be switched in a complementary manner in an initial state, and make the second and the third transistors be switched in a state that it is released from the initial state.

    摘要翻译： 用于产生接收二进制输入控制信号和二进制复位信号并输出​​三进制信号的三态信号的电路。 电路包括第一至第三晶体管，其每个源极分别连接到三个电源，以及输出控制晶体管的控制信号的顺序电路。 顺序电路输出使得第一和第三晶体管在初始状态下以互补方式切换的控制信号，并且使第二和第三晶体管在从初始状态释放的状态下被切换。

    Sustain driver, sustain control system, and plasma display
    7.
    发明授权
    Sustain driver, sustain control system, and plasma display 有权
    维持驱动器，维持控制系统和等离子显示器

    公开(公告)号：US07358968B2

    公开(公告)日：2008-04-15

    申请号：US10991243

    申请日：2004-11-17

    申请人： Masahiko Sasada ,  Hiroki Matsunaga ,  Masashi Inao ,  Hiroshi Ando ,  Jinsaku Kaneda ,  Eisaku Maeda ,  Akihiro Maejima

    发明人： Masahiko Sasada ,  Hiroki Matsunaga ,  Masashi Inao ,  Hiroshi Ando ,  Jinsaku Kaneda ,  Eisaku Maeda ,  Akihiro Maejima

    IPC分类号： H01L29/739 ,  H01L31/00 ,  H03F3/16 ,  G09G3/28 ,  G09G5/00 ,  G06F3/038 ,  H01L27/10 ,  H01L29/73 ,  H03F3/04 ,  G09G3/20

    CPC分类号： G09G3/296 ,  G09G3/282 ,  G09G3/294 ,  G09G2300/0408 ,  G09G2310/0289 ,  G09G2330/04

    摘要： The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.

    摘要翻译： 双极晶体管电路的集电极，发射极和基极分别连接到高侧电源端子，电平移位晶体管的漏极和浮动电源端子。 当高边输出晶体管导通时，浮动电源端子处于高电位电源端子的电位。 高侧电源端子通过恒定电压处于高于浮动电源端子的电位的电位。 开启电平移位晶体管时，其漏极电位降低到浮动电源端子的电位以下; 基极电流流过双极晶体管电路，电平移位晶体管的漏极电压钳位在浮动电源端子的电位附近; 双极晶体管电路导通，其集电极电流提供电平移位晶体管的漏极电流。

    Multi-channel semiconductor integrated circuit
    8.
    发明授权
    Multi-channel semiconductor integrated circuit 有权
    多通道半导体集成电路

    公开(公告)号：US07759987B2

    公开(公告)日：2010-07-20

    申请号：US12048895

    申请日：2008-03-14

    申请人： Naoki Hishikawa ,  Hiroki Matsunaga ,  Jinsaku Kaneda

    发明人： Naoki Hishikawa ,  Hiroki Matsunaga ,  Jinsaku Kaneda

    IPC分类号： H03B1/00

    CPC分类号： H03K3/35613

    摘要： A semiconductor integrated circuit includes a high-side transistor, a low-side transistor, a level shift circuit for driving the high-side transistor, and a pre-driver circuit for driving the low-side transistor. A connection point of the high-side transistor and the low-side transistor serves as an output terminal. The level shift circuit has first and second N-type MOS transistors whose gates are driven by the pre-driver circuit. The semiconductor integrated circuit further includes a diode whose anode is connected to the drain of the first or second N-type MOS transistor to which the gate of the high-side transistor is not connected, and whose cathode is connected to the output terminal.

    摘要翻译： 半导体集成电路包括高侧晶体管，低侧晶体管，用于驱动高侧晶体管的电平移位电路和用于驱动低侧晶体管的预驱动电路。 高侧晶体管和低侧晶体管的连接点用作输出端子。 电平移位电路具有第一和第二N型MOS晶体管，其栅极由预驱动器电路驱动。 半导体集成电路还包括其阳极连接到第一或第二N型MOS晶体管的漏极的二极管，高侧晶体管的栅极未连接到该漏极，并且其阴极连接到输出端子。

    CAPACITIVE LOAD DRIVING CIRCUIT AND PLASMA DISPLAY PANEL
    9.
    发明申请
    CAPACITIVE LOAD DRIVING CIRCUIT AND PLASMA DISPLAY PANEL 审中-公开
    电容负载驱动电路和等离子显示面板

    公开(公告)号：US20090085899A1

    公开(公告)日：2009-04-02

    申请号：US12181595

    申请日：2008-07-29

    申请人： Hiroshi ANDO ,  Seiya Yoshida ,  Hiroki Matsunaga ,  Jinsaku Kaneda

    发明人： Hiroshi ANDO ,  Seiya Yoshida ,  Hiroki Matsunaga ,  Jinsaku Kaneda

    IPC分类号： G09G5/00 ,  G09G3/28

    CPC分类号： G09G3/296 ,  G09G3/293 ,  G09G3/2948 ,  G09G2310/0218 ,  G09G2310/066 ,  G09G2330/028

    摘要： A scan driving circuit includes: a shift register section receiving a scan data signal and a scan clock signal; a plurality of pulse width control circuits each receiving an output signal from the shift register section and a negative pulse width control signal to output a signal whose pulse width is controlled based on the negative pulse width control signal; a blanking section receiving the output signals from the plurality of pulse width control circuits and a blanking signal; and a plurality of high voltage output sections for amplifying the output signals from the plurality of pulse width control circuits, which are received via the blanking section, to successively output negative pulses each having a controlled pulse width to the scanning electrodes.

    摘要翻译： 扫描驱动电路包括：接收扫描数据信号和扫描时钟信号的移位寄存器部分; 多个脉冲宽度控制电路，各自接收来自移位寄存器部分的输出信号和负脉冲宽度控制信号，以输出基于负脉冲宽度控制信号来控制其脉冲宽度的信号; 接收来自多个脉冲宽度控制电路的输出信号的消隐部分和消隐信号; 以及多个高电压输出部分，用于放大经由消隐部分接收的多个脉冲宽度控制电路的输出信号，以连续向扫描电极输出每个具有受控脉冲宽度的负脉冲。

    Semiconductor integrated circuit device
    10.
    发明授权
    Semiconductor integrated circuit device 有权
    半导体集成电路器件

    公开(公告)号：US07495296B2

    公开(公告)日：2009-02-24

    申请号：US11139590

    申请日：2005-05-31

    申请人： Eisaku Maeda ,  Akihiro Maejima ,  Hiroki Matsunaga ,  Jinsaku Kaneda ,  Masahiko Sasada

    发明人： Eisaku Maeda ,  Akihiro Maejima ,  Hiroki Matsunaga ,  Jinsaku Kaneda ,  Masahiko Sasada

    IPC分类号： H01L29/94

    CPC分类号： H01L27/11803 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention relates to a layout of a multi-channel semiconductor integrated circuit and provides a layout of a semiconductor integrated circuit having ternary circuits in order to increase a degree of integration in the semiconductor integrated circuit and stabilize output characteristics. A ternary circuit is formed by arranging a second high-side transistor, a diode, a second level shift circuit on one hand, and a low-side transistor, a first high-side transistor, a first level shift circuit, and a pre-driver on the other, so that each of cells are arranged in a row and an output bonding pad is placed between the second high-side transistor and the low-side transistor, wherein a cell width of the first level shift circuit, second level shift circuit and pre-driver corresponds to a cell width of the low-side transistor.

    摘要翻译： 本发明涉及多通道半导体集成电路的布局，并提供具有三元电路的半导体集成电路的布局，以增加半导体集成电路中的集成度并稳定输出特性。 一方面通过布置第二高侧晶体管，二极管，第二电平移位电路和低端晶体管，第一高侧晶体管，第一电平移位电路和预置电路来形成三元电路， 驱动器，使得每个单元排列成一行，并且输出接合焊盘放置在第二高侧晶体管和低侧晶体管之间，其中第一电平移位电路的单元宽度，第二电平移位 电路和预驱动器对应于低侧晶体管的单元宽度。