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    Semiconductor Arrangement Having a Resistive Memory
    2.
    发明申请
    Semiconductor Arrangement Having a Resistive Memory 审中-公开

    公开(公告)号：US20080191197A1

    公开(公告)日：2008-08-14

    申请号：US11572951

    申请日：2005-07-21

    申请人： Andreas Walter ,  Recai Sezi ,  Reimund Engl ,  Anna Maltenberger ,  Joerg Schumann ,  Thomas Weitz

    发明人： Andreas Walter ,  Recai Sezi ,  Reimund Engl ,  Anna Maltenberger ,  Joerg Schumann ,  Thomas Weitz

    IPC分类号： H01L51/30 ,  H01L51/40

    CPC分类号： H01L51/0052 ,  B82Y10/00 ,  G11C13/0014 ,  H01B1/121 ,  H01L27/11502 ,  H01L27/285 ,  H01L51/0036 ,  H01L51/0051

    摘要： A memory cell reversibly switchable between different stable electrical resistance states, the memory cell having a first electrode and a second electrode and an active layer arranged between the first and the second electrode, the active layer including a compound represented by general formula , wherein R1 and R2 are independently selected from —H, —(CH2)mCH3, -phenyl, —O—(CH2)mCH3, —O-phenyl, —S(CH2)mCH3, —S-aryl, —NR3R4, —SR3 and -halogen; R1 and R2 may together form a ring; R5 and R6 are independently selected from —H, -alkyl, -aryl and -heteroaryl; m is either 0 or an integer ranging from 1 to 10; n is an integer ranging from 2 to 1000; and a compound represented by general formula wherein R7, R8, R9, R10, R11, R12, R13, and R14 are independently selected from the group consisting of —H, —(CH2)mCH3, -phenyl, —O—(CH2)mCH3, —O-phenyl, —CO(CH2)mCH3, -halogen, —CN and —NO2; R7 and R8 may together form a ring; R8 and R9 may together form a ring; R9 and R10 may together form a ring; R11 and R12 may together form a ring; R12 and R13 may together form a ring; and R13 and R14 may together form a ring.Furthermore, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.

    Memory cell, method for the production thereof and use of a composition therefor
    3.
    发明授权
    Memory cell, method for the production thereof and use of a composition therefor 有权
    记忆单元，其制造方法和其组合物的使用

    公开(公告)号：US07238964B2

    公开(公告)日：2007-07-03

    申请号：US11044762

    申请日：2005-01-27

    申请人： Andreas Walter ,  Recai Sezi ,  Reimund Engl ,  Anna Maltenberger ,  Joerg Schumann ,  Thomas Weitz

    发明人： Andreas Walter ,  Recai Sezi ,  Reimund Engl ,  Anna Maltenberger ,  Joerg Schumann ,  Thomas Weitz

    IPC分类号： H01L29/04 ,  H01L31/20 ,  H01L33/00

    CPC分类号： H01L51/0595 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01L27/285 ,  H01L51/0051

    摘要： A memory cell is provided which comprises two electrodes and a layer arranged in between and comprising an active material comprising (a) a compound selected from the group consisting of in which R1 and R4, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R1 and R2, R2 and R3, R3 and R4 together may form a ring, (b) a compound of the general formula II: in which R5 to R7, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —NH2, —N(alkyl)2, —N(aryl)2, —N(heteroaryl)2, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R5 and R6 or R7 and R8 together may form a ring, and optionally (c) a polymer. A method for the production of the cells according to the invention and the novel use of a composition which can be used as active material for the memory cells are furthermore provided.

    摘要翻译： 提供了一种存储单元，其包括两个电极和布置在其间并包含活性材料的层，所述活性材料包含（a）选自下组的化合物：其中R 1和R 2， 可以具有以下含义：-H， - 烷基， - 芳基， - 杂芳基，-O-烷基，-O-芳基， - O-杂芳基，-SH - ， - S-烷基， -S-芳基，-S-杂芳基，-CO-烷基，-CO-芳基，-CO-杂芳基，-CS-烷基，-CS-芳基，-CS-杂芳基， - 卤素，-CN和/或-NO 其中R 1和R 2，R 2和R 3， R 3和R 4一起可以形成环，（b）通式II的化合物：其中R 5至R 可以具有如下含义：-H， - 烷基， - 芳基， - 杂芳基， - - - 烷基，-O-芳基， - O-杂芳基， N（烷基）2，-N（芳基）2 N，-N（杂芳基）2， -SH，-S-烷基，-S-芳基，-S-杂芳基，-CO-烷基，-CO-芳基 ，-CO-杂芳基，-CS-烷基，-CS-芳基，-CS-杂芳基， - 卤素，-CN和/或-NO 2，其中R 5 和R 6或R 7和R 8一起可以形成环，和任选地（c）聚合物。 此外还提供了用于生产根据本发明的电池的方法和可用作存储器电池的活性材料的组合物的新用途。

    EQUIPMENT TO DEPOSIT A FLUID SUBSTANCE ON BAKED GOODS
    6.
    发明申请
    EQUIPMENT TO DEPOSIT A FLUID SUBSTANCE ON BAKED GOODS 审中-公开
    储存液体物质的设备

    公开(公告)号：US20120067276A1

    公开(公告)日：2012-03-22

    申请号：US13234219

    申请日：2011-09-16

    申请人： Joerg SCHUMANN

    发明人： Joerg SCHUMANN

    IPC分类号： B05C5/00 ,  B05C11/11 ,  B05C13/00 ,  B05C11/00

    CPC分类号： A21C15/002

    摘要： Equipment for depositing a fluid deposition substance onto baked goods, comprises a reservoir for the fluid deposition substance. a deposition unit to deposit the fluid deposition substance onto the baked goods, a feed means to feed the fluid deposition substance from the reservoir into the deposition unit, a conveyor configured underneath the depositing unit to convey the baked goods relative to the deposition unit along one direction of conveyance, a collecting unit situated underneath the conveyor to collect excess deposition substance that was not received on the baked goods, and a temperature controller allowing to temperature-control the equipment at least in segments. The conveyor is fitted with substantially bar-shaped baked-goods support elements which are configured mutually spaced apart in the direction of conveyance (R1) and in a direction (R2) transverse to the direction (R1).

    摘要翻译： 用于将流体沉积物质沉积在烘焙食品上的设备包括用于流体沉积物质的储存器。 用于将流体沉积物质沉积到烘焙食品上的沉积单元，用于将流体沉积物质从贮存器供给到沉积单元中的进料装置;配置在沉积单元下方的输送器，用于沿着一个 传送方向，位于输送机下方的收集单元，以收集未被接收在烘焙食品上的过量沉积物质;以及温度控制器，其允许至少对片段进行温度控制。 输送机配有基本上条形的烘烤食品支撑元件，它们在输送方向（R1）和横向于（R1）的方向（R2）上相互间隔开。

    Memory cell, method for the production thereof and use of a composition therefor
    9.
    发明申请
    Memory cell, method for the production thereof and use of a composition therefor 有权
    记忆单元，其制造方法和其组合物的使用

    公开(公告)号：US20050179033A1

    公开(公告)日：2005-08-18

    申请号：US11044762

    申请日：2005-01-27

    申请人： Andreas Walter ,  Recai Sezi ,  Reimund Engl ,  Anna Maltenberger ,  Joerg Schumann ,  Thomas Weitz

    发明人： Andreas Walter ,  Recai Sezi ,  Reimund Engl ,  Anna Maltenberger ,  Joerg Schumann ,  Thomas Weitz

    IPC分类号： C07C211/50 ,  C07D345/00 ,  G11C11/21 ,  G11C13/00 ,  G11C13/02 ,  H01L27/24 ,  H01L27/28 ,  H01L29/08 ,  H01L35/24 ,  H01L51/30

    CPC分类号： H01L51/0595 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01L27/285 ,  H01L51/0051

    摘要： A memory cell is provided which comprises two electrodes and a layer arranged in between and comprising an active material comprising (a) a compound selected from the group consisting of in which R1 and R4, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R1 and R2, R2 and R3, R3 and R4 together may form a ring, (b) a compound of the general formula II: in which R5 to R7, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —NH2, —N(alkyl)2, —N(aryl)2, —N(heteroaryl)2, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R5 and R6 or R7 and R8 together may form a ring, and optionally (c) a polymer. A method for the production of the cells according to the invention and the novel use of a composition which can be used as active material for the memory cells are furthermore provided.

    摘要翻译： 提供了一种存储单元，其包括两个电极和布置在其间并包含活性材料的层，所述活性材料包含（a）选自下组的化合物：其中R 1和R 2， 可以具有以下含义：-H， - 烷基， - 芳基， - 杂芳基，-O-烷基，-O-芳基， - O-杂芳基，-SH - ， - S-烷基， -S-芳基，-S-杂芳基，-CO-烷基，-CO-芳基，-CO-杂芳基，-CS-烷基，-CS-芳基，-CS-杂芳基， - 卤素，-CN和/或-NO 其中R 1和R 2，R 2和R 3， R 3和R 4一起可以形成环，（b）通式II的化合物：其中R 5至R 可以具有如下含义：-H， - 烷基， - 芳基， - 杂芳基， - - - 烷基，-O-芳基， - O-杂芳基， N（烷基）2，-N（芳基）2 N，-N（杂芳基）2， -SH，-S-烷基，-S-芳基，-S-杂芳基，-CO-烷基，-CO-芳基 ，-CO-杂芳基，-CS-烷基，-CS-芳基，-CS-杂芳基， - 卤素，-CN和/或-NO 2，其中R 5 和R 6或R 7和R 8一起可以形成环，和任选地（c）聚合物。 此外还提供了用于生产根据本发明的电池的方法和可用作存储器电池的活性材料的组合物的新用途。