Shadow shielding
    3.
    发明授权
    Shadow shielding 失效
    阴影屏蔽

    公开(公告)号:US5436945A

    公开(公告)日:1995-07-25

    申请号:US160853

    申请日:1993-12-03

    IPC分类号: G21C11/02 G21C11/06 G21C11/00

    摘要: Disclosed is a method for reducing embrittlement of certain materials of pressurized water reactor vessels caused by neutron flux. According to this method, "shadow shielding" is placed within the core support barrel in areas having a more benign flow environment than that of the downcomer area. This shadow shielding provides an increased neutron scattering cross section. In one example, the shadow shielding replaces segments of the core shroud plate in a manner which does not interfere with coolant flow in the vessel. The segments of the shroud plate which are replaced are those near critical regions of the vessel, typically welds. The size and shape of the shielding is determined according to plant specific requirements.

    摘要翻译: 公开了一种减少由中子通量引起的某些加压水反应堆容器的脆化的方法。 根据该方法,在具有比降液管区域更流畅的流动环境的区域中的“核心支撑筒”内设置“阴影屏蔽”。 该阴影屏蔽提供了增加的中子散射横截面。 在一个示例中,阴影屏蔽以不干扰容器中的冷却剂流动的方式替代核心护罩板的段。 被替换的护罩板的部分是在容器的临界区域附近的部分,通常是焊接的。 屏蔽的尺寸和形状根据工厂的具体要求确定。

    Deposition Apparatus and Methods
    5.
    发明申请
    Deposition Apparatus and Methods 审中-公开
    沉积设备和方法

    公开(公告)号:US20120196051A1

    公开(公告)日:2012-08-02

    申请号:US13016223

    申请日:2011-01-28

    摘要: A deposition apparatus includes a deposition chamber and a deposition material source. An electron beam source is positioned to direct a first electron beam to vaporize a portion of the deposition material. A first electrode is provided for generating a primary plasma from the deposition material source. A second electrode is provided for generating a secondary plasma and further accelerating ions from the primary plasma. A bias electric potential is applied to the workpiece to draw ions from the secondary plasma to the workpiece. A control system may be coupled to the electron beam source, the bias voltage source, and power supplies for the first and second electrodes.

    摘要翻译: 沉积设备包括沉积室和沉积材料源。 电子束源被定位成引导第一电子束以蒸发沉积材料的一部分。 提供第一电极用于从沉积材料源产生初级等离子体。 提供第二电极用于产生次级等离子体并进一步加速来自初级等离子体的离子。 将偏置电位施加到工件上以将离子从次级等离子体吸取到工件。 控制系统可以耦合到电子束源,偏置电压源和用于第一和第二电极的电源。

    Ceramic Coating Deposition
    8.
    发明申请
    Ceramic Coating Deposition 有权
    陶瓷涂层沉积

    公开(公告)号:US20120231173A1

    公开(公告)日:2012-09-13

    申请号:US13043948

    申请日:2011-03-09

    IPC分类号: C23C16/50 B05D1/04

    CPC分类号: C23C14/30 C23C14/32

    摘要: A material is applied to a part. The part is placed in a deposition chamber and a first electric potential is applied to the part. Components are evaporated for forming the material. The evaporated components are ionized. The first electric potential is modulated so as to draw the ionized component to the part. The modulation comprises a plurality of first steps for PA-PVD. Each of the first steps comprises a series of pulses of negative potential. The modulation further comprises a plurality of second steps for PVD alternating with the first steps.

    摘要翻译: 材料应用于零件。 该部件被放置在沉积室中,并且第一电位被施加到该部件上。 蒸发组分以形成材料。 蒸发的组分被电离。 调制第一电位以将电离成分吸引到该部分。 该调制包括用于PA-PVD的多个第一步骤。 每个第一步骤包括一系列具有负电位的脉冲。 调制还包括与第一步交替的PVD的多个第二步骤。

    Ceramic coating deposition
    10.
    发明授权
    Ceramic coating deposition 有权
    陶瓷涂层沉积

    公开(公告)号:US08642140B2

    公开(公告)日:2014-02-04

    申请号:US13043948

    申请日:2011-03-09

    IPC分类号: H05H1/24

    CPC分类号: C23C14/30 C23C14/32

    摘要: A material is applied to a part. The part is placed in a deposition chamber and a first electric potential is applied to the part. Components are evaporated for forming the material. The evaporated components are ionized. The first electric potential is modulated so as to draw the ionized component to the part. The modulation comprises a plurality of first steps for PA-PVD. Each of the first steps comprises a series of pulses of negative potential. The modulation further comprises a plurality of second steps for PVD alternating with the first steps.

    摘要翻译: 材料应用于零件。 该部件被放置在沉积室中,并且第一电位被施加到该部件上。 蒸发组分以形成材料。 蒸发的组分被电离。 调制第一电位以将电离成分吸引到该部分。 该调制包括用于PA-PVD的多个第一步骤。 每个第一步骤包括一系列具有负电位的脉冲。 调制还包括与第一步交替的PVD的多个第二步骤。